Vishay Siliconix IRFBC40A

Overview

IRFBC40A from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in SMPS and UPS systems. It features 1.2 Ω R_DS(on) at V_GS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy - enabling robust operation in unclamped inductive switching.

For engineers reviewing the IRFBC40A datasheet, IRFBC40A pinout, IRFBC40A application, or IRFBC40A equivalent, key selection criteria include its 600 V blocking capability, avalanche ruggedness, low Q_g/Q_gd ratio for fast switching control, and thermal resistance of 1.0 °C/W (junction-to-case), critical for high-reliability power conversion designs.

Technical Context

This device employs planar vertical DMOS technology with fully characterized capacitance profiles (C_iss = 1036 pF, C_oss = 136 pF, C_rss = 7.0 pF) and specified effective output capacitance (C_{oss eff.} = 48 pF) for accurate snubber and timing calculations. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under varying drive conditions.

Avalanche performance is rigorously validated: 570 mJ single-pulse E_AS at I_AS = 6.2 A and 13 mJ repetitive E_AR support reliable operation in flyback and forward converters without external clamping. Body diode recovery (t_rr = 431–647 ns, Q_rr = 1.8–2.8 μC) is characterized for synchronous rectification evaluation.

Key Specifications

Pinout & Package

IRFBC40A uses the industry-standard TO-220AB package (JEDEC MS-001AC), with drain-connected tab for direct heatsinking. Pin assignment follows standard N-channel MOSFET configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and IXTH6N60P, the IRFBC40A delivers balanced trade-offs: superior avalanche ruggedness versus ST's lower Q_g, and TO-220 compactness versus IXYS's higher-power TO-247 - making it optimal for space-constrained 300–600 W industrial SMPS where reliability under transient overload is critical.

Availability

IRFBC40A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing options.

Supply support for IRFBC40A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability across automotive, industrial, and computing markets.

The IRFBC40A belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for demanding offline power conversion applications where avalanche capability, low gate charge, and thermal stability are essential design requirements.

FAQ

What is the maximum continuous drain current for IRFBC40A at 100 °C case temperature?

The IRFBC40A supports 3.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 °C to +150 °C operating range. At 25 °C case temperature, the rating increases to 6.2 A. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full load for reliable IRFBC40A operation.

Does IRFBC40A have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFBC40A integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key recovery specifications include reverse recovery time t_rr = 431–647 ns and reverse recovery charge Q_rr = 1.8–2.8 μC, measured at T_J = 25 °C, I_F = 6.2 A, and dI/dt = 100 A/μs. These values directly impact switching losses and EMI in hard-commutated topologies - designers should account for them in snubber and gate drive timing calculations for the IRFBC40A.

What is the gate threshold voltage range for IRFBC40A, and how does it affect drive compatibility?

The IRFBC40A has a gate threshold voltage V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA, per the datasheet's Static Specifications table. This range confirms compatibility with standard 10 V logic-level gate drivers while providing noise immunity against spurious turn-on. Because the device is not a logic-level MOSFET (which typically has V_GS(th) < 2.0 V), it requires ≥8 V gate drive for full enhancement - ensuring stable IRFBC40A operation in industrial SMPS where gate drive margins matter.

How does the effective output capacitance (C_{oss eff.}) of IRFBC40A differ from its static C_oss, and why is it important?

The IRFBC40A specifies C_{oss eff.} = 48 pF - a dynamic value derived from the actual charging time of C_oss as V_DS rises from 0 to 80 % of 480 V. This differs from static C_oss = 136 pF (measured at V_DS = 25 V), which overestimates turn-off energy. Using C_{oss eff.} enables accurate calculation of turn-off loss (E_off ≈ ½ × C_{oss eff.} × V_DS² × f_sw) and resonant timing in soft-switching circuits - a critical parameter for optimizing efficiency in high-frequency IRFBC40A-based converters.

Is IRFBC40A suitable for avalanche-mode operation, and what are its validated ratings?

Yes, the IRFBC40A is fully characterized for avalanche operation. It guarantees 570 mJ single-pulse avalanche energy (E_AS) and 6.2 A repetitive avalanche current (I_AR) with 13 mJ repetitive energy (E_AR). These ratings are validated per test conditions in Figure 12 (unclamped inductive switching) and support reliable use in flyback, forward, and motor brake circuits where inductive energy must be absorbed internally. Designers may rely on these tested values - not estimates - when specifying IRFBC40A for avalanche-prone applications.