Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBC40APBF

Name: IRFBC40APBF
Brand: Vishay Siliconix
SKU: IRFBC40APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFBC40APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBC40APBF.pdf

Description:: MOSFET N-CH 600V 6.2A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:988

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFBC40APBF from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in offline SMPS and UPS systems. It features 1.2 Ω R_DS(on) at V_GS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy - enabling robust operation in unclamped inductive switching.

For engineers reviewing the IRFBC40APBF datasheet, IRFBC40APBF pinout, IRFBC40APBF application, or IRFBC40APBF equivalent, key selection criteria include its 600 V blocking rating, avalanche ruggedness, low Q_gd/Q_gs ratio for dV/dt immunity, and thermal resistance of 1.0 °C/W (junction-to-case), critical for high-reliability power conversion designs.

Technical Context

This device employs a planar vertical DMOS structure with fully characterized avalanche performance and dynamic dV/dt ruggedness up to 6.0 V/ns. Its gate threshold voltage (2.0–4.0 V) and low gate leakage (< ±100 nA) support stable drive across temperature and reduce controller loading.

The MOSFET integrates an intrinsic body diode with 431–647 ns reverse recovery time and 1.8–2.8 μC Q_rr, making it suitable for hard-switched topologies where diode recovery behavior directly impacts EMI and switching loss. C_{oss eff.} is specified at 48 pF for accurate snubber design under 0–480 V transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified systems with 50 % safety margin
R_DS(on)	1.2 Ω @ V_GS = 10 V - enables <1.4 W conduction loss at 3.4 A RMS in 100 kHz SMPS
Q_g	42 nC - determines gate driver current requirement (~1.7 A peak for 25 ns rise time)
E_AS	570 mJ - allows safe operation during 6.2 A inductive turn-off without external clamping
R_thJC	1.0 °C/W - enables 125 W dissipation with ≤125 °C junction rise above heatsink
C_{oss eff.}	48 pF - defines timing of V_DS rise during turn-on; used for resonant transition analysis
I_D (T_C = 100 °C)	3.9 A - sets maximum continuous current under forced-air-cooled conditions

Pinout & Package

IRFBC40APBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard lead spacing, and 1.0 mm lead thickness per JEDEC TO-220 outline. Mounting torque: 1.1 N·m (10 lbf·in).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 10 nC Q_gs ensures fast turn-on with minimal Miller effect
D (Drain)	High-side power terminal	Connected to heatsink tab; 600 V rating supports primary-side switching in flyback/forward converters
S (Source)	Reference node / return path	Provides low-inductance source return; body diode cathode tied to drain for freewheeling

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	42 nC / 20 nC = 2.1 - improves noise immunity and reduces risk of spurious turn-on during high dV/dt events
Specified C_{oss eff.}	48 pF - enables accurate calculation of turn-on loss and snubber sizing across full V_DS swing
Avalanche-rated	570 mJ single-pulse E_AS - eliminates need for external RCD clamp in many 6.2 A inductive load applications
RoHS-compliant Pb-free termination	IRFBC40APBF uses matte tin plating on leads - meets EU Directive 2011/65/EU without exemptions
Characterized dV/dt ruggedness	6.0 V/ns - validated under repetitive stress, supporting reliable operation in noisy industrial environments

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 1 kW server power supply operating in discontinuous conduction mode (DCM) flyback topology with 375 V DC bus. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 6.2 A peak current at 100 kHz, absorbing leakage inductance energy during turn-off. Use Value: 570 mJ E_AS withstands unclamped inductive spikes without failure; 1.2 Ω R_DS(on) limits conduction loss to <1.5 W at full load.	Use Scenario: 3 kVA online UPS inverter bridge leg switching 480 V DC bus into 230 V AC output with 50 Hz PWM modulation. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, conducting 6.2 A RMS with body diode freewheeling during dead-time. Use Value: 431–647 ns t_rr and 1.8–2.8 μC Q_rr minimize diode reverse recovery loss and associated EMI generation.
AC-DC Adapter Flyback	Motor Drive Snubber Circuit
Use Scenario: 65 W universal-input (90–264 V AC) adapter using quasi-resonant flyback with integrated controller. IC Role / Device Role / Timing Role: Main power switch subjected to 600 V blocking stress and 6.2 A peak drain current during startup surges. Use Value: 600 V V_DS rating provides 2× margin over 375 V DC bus; 2.0–4.0 V V_GS(th) ensures clean turn-on with standard 12 V gate drivers.	Use Scenario: 750 W BLDC motor drive using IGBTs in three-phase inverter, where IRFBC40APBF serves as active snubber switch across DC bus. IC Role / Device Role / Timing Role: Fast-turning snubber MOSFET clamping voltage spikes during IGBT commutation, triggered synchronously with main switches. Use Value: 42 nC Q_g enables sub-50 ns switching; 1.0 °C/W R_thJC allows direct mounting to shared heatsink without thermal derating.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 1 kW server power supply operating in discontinuous conduction mode (DCM) flyback topology with 375 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 6.2 A peak current at 100 kHz, absorbing leakage inductance energy during turn-off.

Use Value: 570 mJ E_AS withstands unclamped inductive spikes without failure; 1.2 Ω R_DS(on) limits conduction loss to <1.5 W at full load.

Use Scenario: 3 kVA online UPS inverter bridge leg switching 480 V DC bus into 230 V AC output with 50 Hz PWM modulation.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, conducting 6.2 A RMS with body diode freewheeling during dead-time.

Use Value: 431–647 ns t_rr and 1.8–2.8 μC Q_rr minimize diode reverse recovery loss and associated EMI generation.

AC-DC Adapter Flyback

Motor Drive Snubber Circuit

Use Scenario: 65 W universal-input (90–264 V AC) adapter using quasi-resonant flyback with integrated controller.

IC Role / Device Role / Timing Role: Main power switch subjected to 600 V blocking stress and 6.2 A peak drain current during startup surges.

Use Value: 600 V V_DS rating provides 2× margin over 375 V DC bus; 2.0–4.0 V V_GS(th) ensures clean turn-on with standard 12 V gate drivers.

Use Scenario: 750 W BLDC motor drive using IGBTs in three-phase inverter, where IRFBC40APBF serves as active snubber switch across DC bus.

IC Role / Device Role / Timing Role: Fast-turning snubber MOSFET clamping voltage spikes during IGBT commutation, triggered synchronously with main switches.

Use Value: 42 nC Q_g enables sub-50 ns switching; 1.0 °C/W R_thJC allows direct mounting to shared heatsink without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 1.2 Ω, Q_g = 32 nC, TO-220FP package (full-pack)	Lower I_D rating and no published E_AS spec - less suited for unclamped inductive loads	Prefer when lower gate drive power is critical and avalanche stress is absent
FQP6N60C	600 V, 6.0 A, R_DS(on) = 1.4 Ω, Q_g = 36 nC, TO-220 package, non-RoHS Pb option only	Higher R_DS(on) increases conduction loss by ~17 %; no C_{oss eff.} or dV/dt ruggedness data published	Acceptable for cost-sensitive designs where RoHS compliance is not required and thermal margin exists

Compared with STP6NK60ZFP and FQP6N60C, IRFBC40APBF offers superior avalanche energy handling (570 mJ vs. unspecified), verified dV/dt ruggedness (6.0 V/ns), and RoHS-compliant Pb-free termination - making it preferred for mission-critical industrial SMPS where reliability under transient stress is mandatory.

Availability

IRFBC40APBF is available at Aetrix Electronics and suitable for switch-mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFBC40APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The IRFBC40APBF belongs to Vishay's high-voltage Power MOSFET family designed specifically for offline AC-DC conversion, UPS inverters, and industrial switching where avalanche capability and thermal stability are essential.

FAQ

What is the maximum continuous drain current for IRFBC40APBF at 100 °C case temperature?

The maximum continuous drain current for IRFBC40APBF is 3.9 A when the case temperature is maintained at 100 °C. This value is derived from thermal derating of the 6.2 A rating at 25 °C, using the linear derating factor of 1.0 W/°C and R_thJC = 1.0 °C/W. Engineers must ensure heatsink design sustains T_C ≤ 100 °C to maintain this current capability in IRFBC40APBF-based designs.

Does IRFBC40APBF have a fully characterized body diode, and what are its key recovery parameters?

Yes, IRFBC40APBF includes a fully characterized intrinsic body diode with published reverse recovery time (t_rr) of 431–647 ns and reverse recovery charge (Q_rr) of 1.8–2.8 μC at T_J = 25 °C, I_F = 6.2 A, and dI/dt = 100 A/μs. These values are measured and documented in the official Vishay datasheet (Doc #91112), enabling accurate loss modeling in hard-switched topologies where the IRFBC40APBF body diode conducts during dead-time.

Is IRFBC40APBF suitable for use in zero-voltage switching (ZVS) circuits?

IRFBC40APBF can be used in ZVS circuits, but its C_oss (136 pF typical at V_DS = 25 V) and C_{oss eff.} (48 pF) are optimized for hard-switched applications rather than resonant soft-switching. While its 600 V rating and low Q_gd support ZVS implementation, designers should verify resonant tank design against the actual C_oss vs. V_DS curve (Fig. 5 in IRFBC40APBF datasheet) to ensure reliable turn-on under zero-voltage conditions.

What is the gate threshold voltage range for IRFBC40APBF, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for IRFBC40APBF is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. Because V_GS(th) has positive temperature coefficient, IRFBC40APBF exhibits inherent current sharing stability in parallel configurations - a key consideration in high-current IRFBC40APBF deployments.

How does the avalanche energy rating of IRFBC40APBF compare to similar 600 V MOSFETs, and why is it important?

IRFBC40APBF specifies 570 mJ single-pulse avalanche energy (E_AS) - among the highest in its class - validated per test condition: L = 29.6 mH, I_AS = 6.2 A, T_J initial = 25 °C. This exceeds typical alternatives (e.g., FQP6N60C: ~300 mJ estimated) and allows IRFBC40APBF to absorb inductive energy without external clamping in many SMPS and motor drive designs, improving system reliability and reducing bill-of-materials cost.

IRFBC40APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1036 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBC40APBF FAQ

1.How can I place an order for IRFBC40APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC40APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC40APBF reliable?

The price and inventory of IRFBC40APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC40APBF is usually 5 days.

3.What payment methods are accepted for IRFBC40APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC40APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC40APBF?

IRFBC40APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC40APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC40APBF?

For technical support, including IRFBC40APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC40APBF requirements.

6.How does Aetrix verify that IRFBC40APBF is sourced from the original manufacturer or authorized distributors?

All IRFBC40APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC40APBF meets industry standards.

7.What is the process for return or replacement of IRFBC40APBF?

All IRFBC40APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC40APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC40APBF part is unused and in its original packaging.

Return procedure for IRFBC40APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …