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Vishay Siliconix IRFBC40APBF-BE3

Part No.:
IRFBC40APBF-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRFBC40APBF-BE3.pdf
Description:
MOSFET N-CH 600V 6.2A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,524

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Product details

Overview

IRFBC40APBF-BE3 from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in TO-220AB package, featuring 1.2 Ω RDS(on) at VGS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy - designed for high-voltage SMPS primary-side switching.

For engineers reviewing the IRFBC40APBF-BE3 datasheet, IRFBC40APBF-BE3 pinout, IRFBC40APBF-BE3 application, or IRFBC40APBF-BE3 equivalent, key selection criteria include avalanche ruggedness, dV/dt immunity (6.0 V/ns), body diode recovery (431–647 ns), and thermal resistance (RthJC = 1.0 °C/W) in high-reliability offline power stages.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage unclamped inductive switching. Its fully characterized Coss (136 pF typ.) and Coss eff. (48 pF) support predictable snubber design in flyback and forward converters.

Gate drive is simplified by low Qg (42 nC) and moderate Qgd/Qgs ratio (2.0), enabling robust operation with standard 10 V gate drivers. The integral body diode exhibits 1.5 V forward drop at 6.2 A and controlled reverse recovery (Qrr = 1.8–2.8 μC).

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - supports 400 V AC mains input with 20 % margin in offline SMPS
RDS(on)1.2 Ω @ VGS = 10 V - enables <6.2 A continuous conduction at TC = 100 °C with ≤7.5 W conduction loss
Qg42 nC - allows fast turn-on/turn-off with ≤9.1 Ω gate resistor while limiting driver power dissipation
EAS570 mJ - withstands unclamped inductive energy in single-pulse fault conditions without failure
dV/dt rating6.0 V/ns - ensures noise-immune operation during high-slew-rate switching in high-density layouts
RthJC1.0 °C/W - enables 125 W power dissipation with ≤125 °C junction rise above heatsink at TC = 25 °C
Body diode trr431–647 ns - defines minimum dead-time requirements in synchronous rectification or half-bridge topologies

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.0 mm lead pitch, and 1.1 N·m maximum mounting torque.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control electrodeAccepts 10 V logic-level drive; 10 nC Qgs enables rapid threshold crossing with minimal Miller plateau duration
D (Drain)High-side power terminalInternally connected to metal tab; requires electrically isolated heatsink mounting per RthCS = 0.50 °C/W spec
S (Source)Power return / reference nodeServes as local ground reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

FeatureDesign Value
Low Qg (42 nC)Reduces gate driver power demand and switching transition time in high-frequency SMPS
Fully characterized Coss & Coss eff.Enables accurate snubber loss calculation and EMI filter tuning across 1–480 V VDS range
Specified avalanche energy (570 mJ)Validates safe operation under transformer leakage inductance kickback without derating
Improved dV/dt ruggedness (6.0 V/ns)Prevents spurious turn-on in high-noise environments such as industrial motor drives
RoHS-compliant + halogen-free (BE3)Meets IPC-1752A material declaration requirements for automotive and medical end equipment

Applications

Switch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 100–500 W offline flyback or single-transistor forward converter.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to transformer primary.

Use Value: 600 V rating and 570 mJ EAS ensure reliable operation during line surges and transformer saturation events.

Use Scenario: DC-AC inverter stage in line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge output stage driving transformer-coupled H-bridge.

Use Value: 6.0 V/ns dV/dt rating prevents false triggering during rapid bus voltage transitions during battery switchover.

High-Speed Power SwitchingIndustrial Motor Drive Front-End

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Isolated load switch handling 24–48 V DC control signals with fast turn-on (<13 ns td(on)) and turn-off (<31 ns td(off)).

Use Value: Low Qg and tight Qgd/Qgs ratio enable microsecond-scale switching with minimal shoot-through risk.

Use Scenario: Brake chopper switch in servo drive regenerative braking circuit.

IC Role / Device Role / Timing Role: Energy-dump switch clamping DC bus overvoltage during motor deceleration.

Use Value: Specified repetitive avalanche current (6.2 A IAR) and energy (13 mJ EAR) allow sustained operation without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP6NK60ZFP600 V, 5.5 A, RDS(on) = 1.2 Ω, Qg = 32 nC, TO-220FP package (full-pack)Lower peak current rating; shorter avalanche time constant due to lower EAS (320 mJ)Preferred where space-constrained PCB layout favors insulated package; requires verification of thermal interface with heatsink
FQP6N60C600 V, 6.0 A, RDS(on) = 1.3 Ω, Qg = 34 nC, TO-220 package with non-isolated tabNon-isolated drain tab necessitates insulating washer; slightly higher conduction loss at full loadCost-optimized alternative when heatsink isolation is already implemented via mechanical means

Compared with STP6NK60ZFP and FQP6N60C, the IRFBC40APBF-BE3 delivers superior single-pulse avalanche robustness (570 mJ vs. ≤320 mJ) and higher continuous current capability (6.2 A vs. ≤6.0 A), making it preferred for mission-critical offline power stages requiring field reliability under transient overload.

Availability

IRFBC40APBF-BE3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and industrial motor drive front-ends requiring stable component supply across extended production lifecycles.

Supply support for IRFBC40APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFBC40A family was engineered for high-voltage, medium-power switching in offline AC/DC conversion, emphasizing avalanche survivability, gate drive simplicity, and thermal stability in thermally constrained enclosures.

FAQ

What is the maximum continuous drain current for IRFBC40APBF-BE3 at 100 °C case temperature?

The IRFBC40APBF-BE3 supports 3.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures junction temperature remains within the -55 °C to +150 °C operating range under sustained load conditions. The IRFBC40APBF-BE3 maintains RDS(on) stability up to 150 °C junction temperature.

Does IRFBC40APBF-BE3 have an isolated drain tab?

Yes, the IRFBC40APBF-BE3 uses a TO-220AB package with an electrically isolated metal tab internally connected to the drain. This allows direct mounting to a grounded heatsink without additional insulation, provided the mounting hardware does not short the tab to other potentials. The IRFBC40APBF-BE3 datasheet specifies RthCS = 0.50 °C/W for flat, greased surface contact.

What is the typical body diode reverse recovery charge (Qrr) of IRFBC40APBF-BE3?

The IRFBC40APBF-BE3 has a typical body diode reverse recovery charge of 1.8 μC, with a maximum of 2.8 μC at TJ = 25 °C, IF = 6.2 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in hard-switched topologies. The IRFBC40APBF-BE3's Qrr is fully characterized and validated per JEDEC standards.

Is IRFBC40APBF-BE3 suitable for use in zero-voltage switching (ZVS) circuits?

The IRFBC40APBF-BE3 is compatible with ZVS operation due to its well-defined Coss (136 pF typ.) and Coss eff. (48 pF), which enable predictable resonant timing. However, its 600 V rating and 1.2 Ω RDS(on) make it most effective in 300–400 V bus ZVS designs rather than ultra-high-frequency LLC resonant converters. The IRFBC40APBF-BE3's dV/dt rating supports clean ZVS transitions without spurious turn-on.

What is the gate-source leakage current specification for IRFBC40APBF-BE3?

The IRFBC40APBF-BE3 specifies gate-source leakage current (IGSS) as ±100 nA maximum at VGS = ±30 V and TJ = 25 °C. This low leakage ensures stable gate bias in high-impedance drive circuits and contributes to low standby power consumption in always-on SMPS controllers. The IRFBC40APBF-BE3 maintains this performance across its full operating temperature range.

IRFBC40APBF-BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1036 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRFBC40APBF-BE3 FAQ

1.How can I place an order for IRFBC40APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC40APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC40APBF-BE3 reliable?

The price and inventory of IRFBC40APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC40APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFBC40APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC40APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC40APBF-BE3?

IRFBC40APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC40APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC40APBF-BE3?

For technical support, including IRFBC40APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC40APBF-BE3 requirements.

6.How does Aetrix verify that IRFBC40APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFBC40APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC40APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFBC40APBF-BE3?

All IRFBC40APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC40APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC40APBF-BE3 part is unused and in its original packaging.

Return procedure for IRFBC40APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFBC40APBF-BE3 Tags

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