Vishay Siliconix IRFBC40AS

Overview

IRFBC40AS from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS topologies including single-transistor forward converters.

For engineers reviewing the IRFBC40AS datasheet, IRFBC40AS pinout, IRFBC40AS application, or IRFBC40AS equivalent, key selection criteria include its 600 V blocking capability, rugged unclamped inductive switching performance, low Q_gd/Q_g ratio for hard-switching stability, and thermal resistance of 1.0 °C/W junction-to-case-critical for conduction- and avalanche-limited designs in industrial power supplies.

Technical Context

This device implements a planar high-voltage vertical DMOS structure optimized for fast, robust avalanche operation. Its 1.2 Ω R_DS(on) is specified at 3.7 A and 25 °C, with a positive V_DS temperature coefficient (0.66 V/°C) enabling current sharing in parallel configurations.

Dynamic behavior is characterized by 20 nC Q_gd, 10 nC Q_gs, and 42 nC Q_g, supporting gate drive simplicity while maintaining 6.0 V/ns peak diode recovery dV/dt rating. C_{oss eff.} is fixed at 48 pF across 0–480 V, enabling predictable snubber design in flyback and forward converters.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab on underside for thermal and electrical connection; 3-pin configuration (G, D, S) with drain connected to the large copper pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and IXTH12N60L2, the IRFBC40AS offers optimal balance of D2PAK thermal efficiency, 6.2 A current capability, and 42 nC gate charge for compact, medium-power SMPS-making it preferable over TO-220 alternatives in space-constrained layouts and superior to TO-247 devices where gate drive simplicity and board area are prioritized.

Availability

IRFBC40AS is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed industrial switching applications requiring stable component supply, RoHS-compliant sourcing, and long-term lifecycle support.

Supply support for IRFBC40AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBC40AS belongs to Vishay's high-voltage planar MOSFET product line, engineered for ruggedness in unclamped inductive switching and optimized for offline AC-DC conversion in cost-sensitive, thermally constrained power systems.

FAQ

What is the maximum continuous drain current rating for IRFBC40AS at 100 °C case temperature?

The IRFBC40AS has a maximum continuous drain current (I_D) of 3.9 A at T_C = 100 °C, derated linearly from 6.2 A at 25 °C using a 1.0 W/°C derating factor. This value reflects thermal limits under steady-state conduction and must be validated with actual heatsink performance and ambient conditions in the final layout. The IRFBC40AS datasheet specifies this limit in Absolute Maximum Ratings Table 1.

Does IRFBC40AS support logic-level gate drive?

No, the IRFBC40AS is not a logic-level MOSFET. Its gate-source threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified 1.2 Ω R_DS(on). Driving the IRFBC40AS below 10 V results in significantly higher on-resistance and conduction losses. The IRFBC40AS is designed for standard 10 V gate drive, not 3.3 V or 5 V logic interfaces.

What is the body diode reverse recovery charge (Q_rr) of IRFBC40AS and how does it affect hard-switching performance?

The IRFBC40AS body diode exhibits Q_rr = 1.8–2.8 μC under test conditions of I_F = 6.2 A, dI/dt = 100 A/μs, and T_J = 25 °C. This stored charge contributes directly to switching losses and voltage overshoot during turn-on of the complementary switch in bridge topologies. Designers must account for Q_rr in the IRFBC40AS when selecting gate resistors and snubbers to manage di/dt-induced stress. The IRFBC40AS datasheet reports Q_rr in Section "Drain-Source Body Diode Characteristics".

Can IRFBC40AS be used in parallel configurations, and what design considerations apply?

Yes, the IRFBC40AS can be paralleled due to its positive V_DS temperature coefficient (0.66 V/°C), which promotes current sharing as junction temperature rises. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual source resistors for current sensing. Thermal coupling between devices must be minimized to avoid thermal runaway. The IRFBC40AS datasheet confirms this behavior in the Static section under ΔV_DS/T_J.

What is the recommended soldering profile for IRFBC40AS in D2PAK package?

The IRFBC40AS D2PAK package supports a peak soldering temperature of 300 °C for 10 seconds, per Vishay's Package Information document 91364. Reflow profiles must comply with JEDEC J-STD-020 for moisture sensitivity level (MSL) 1, with preheat, soak, and ramp rates controlled to prevent package delamination or die attach voiding. The IRFBC40AS thermal pad requires adequate stencil aperture and solder paste volume to ensure mechanical integrity and thermal performance.