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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBC40ASPBF

Name: IRFBC40ASPBF
Brand: Vishay Siliconix
SKU: IRFBC40ASPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBC40ASPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFBC40ASPBF.pdf

Description:: MOSFET N-CH 600V 6.2A D2PAK

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Product details

Overview

IRFBC40ASPBF from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in offline SMPS topologies including single-transistor forward converters.

For engineers reviewing the IRFBC40ASPBF datasheet, IRFBC40ASPBF pinout, IRFBC40ASPBF application, or IRFBC40ASPBF equivalent, key selection criteria include its 600 V blocking rating, rugged unclamped inductive switching capability, low Q_gd/Q_gs ratio for hard-switching stability, and thermal resistance of 1.0 °C/W junction-to-case - critical for high-reliability industrial power supplies.

Technical Context

This device employs a planar high-voltage silicon process optimized for fast, controlled turn-off and robust avalanche performance. Its dynamic parameters - including 20 nC Q_gd, 10 nC Q_gs, and 431–647 ns body diode t_rr - reflect design trade-offs favoring EAS-rated operation over ultra-fast recovery.

The MOSFET integrates a co-packaged body diode with 1.5 V V_SD at 6.2 A and supports dV/dt immunity up to 6.0 V/ns. Its SOA is defined up to 150 °C junction temperature, with linear derating from 125 W at 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing
R_DS(on)	1.2 Ω @ V_GS = 10 V - enables <1.4 W conduction loss at 3.7 A RMS in continuous conduction mode
Q_g total	42 nC - determines gate driver current requirement (~1.7 A peak for 25 ns rise time)
E_AS	570 mJ - specifies maximum single-pulse inductive energy the device can absorb without failure
R_thJC	1.0 °C/W - allows 125 W dissipation with ≤125 °C ΔT from junction to heatsink mounting surface
t_rr	431–647 ns - defines body diode reverse recovery window affecting cross-conduction losses in bridge legs
I_D cont	6.2 A @ T_C = 25 °C - sets thermal limit for PCB-mounted heatsinking in open-frame power supplies

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on underside for thermal and electrical connection; 3-pin configuration (G, D, S) in standard leadframe layout.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; 0.6–3.9 Ω gate input resistance affects RC timing
D	Drain	High-side switching node; electrically connected to exposed thermal pad; must be isolated from heatsink unless referenced to same potential
S	Source	Power return path and gate reference; ties to PCB ground plane; source inductance directly impacts switching overshoot

Key Features

Feature	Design Value
Low Q_g / Q_gd ratio	42 nC / 20 nC = 2.1 - improves hard-switching noise immunity and reduces Miller-induced false turn-on risk
Specified C_{oss eff.}	48 pF - enables accurate snubber design for 480 V bus transitions with predictable turn-off loss
Characterized avalanche performance	570 mJ E_AS and 6.2 A I_AR - permits reliable operation in unclamped inductive switching without external clamping
Rugged dV/dt rating	6.0 V/ns - ensures stable operation under high dv/dt transients common in flyback and resonant converters

Applications

Server SMPS	Industrial UPS
Use Scenario: Primary-side switch in 1–3 kW telecom rectifier modules operating from 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time. Use Value: 600 V rating provides margin against line surges; 570 mJ E_AS eliminates need for external RCD clamp in cost-sensitive designs.	Use Scenario: Inverter stage switch in 5–10 kVA online UPS systems with battery backup and double-conversion topology. IC Role / Device Role / Timing Role: DC-link switching element handling bidirectional power flow between battery bank and AC output stage. Use Value: 6.2 A continuous current and 1.2 Ω R_DS(on) support efficient 20 kHz PWM operation with <1.5 W conduction loss per device.
AC-DC Adapters	Motor Drive Stages
Use Scenario: Main switch in universal-input (90–264 V AC), 150–300 W open-frame adapters using quasi-resonant flyback. IC Role / Device Role / Timing Role: High-side switch modulating primary current to regulate secondary output voltage via optocoupler feedback. Use Value: Low Q_g (42 nC) enables simple gate drive with low-cost bipolar transistor or integrated controller.	Use Scenario: Upper-leg switch in three-phase IGBT/MOSFET inverter stages for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side power switch in half-bridge leg, commutating motor phase current with body diode freewheeling. Use Value: 1.5 V V_SD and 6.2 A I_S support efficient synchronous rectification during dead-time intervals.

Server SMPS

Industrial UPS

Use Scenario: Primary-side switch in 1–3 kW telecom rectifier modules operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time.

Use Value: 600 V rating provides margin against line surges; 570 mJ E_AS eliminates need for external RCD clamp in cost-sensitive designs.

Use Scenario: Inverter stage switch in 5–10 kVA online UPS systems with battery backup and double-conversion topology.

IC Role / Device Role / Timing Role: DC-link switching element handling bidirectional power flow between battery bank and AC output stage.

Use Value: 6.2 A continuous current and 1.2 Ω R_DS(on) support efficient 20 kHz PWM operation with <1.5 W conduction loss per device.

AC-DC Adapters

Motor Drive Stages

Use Scenario: Main switch in universal-input (90–264 V AC), 150–300 W open-frame adapters using quasi-resonant flyback.

IC Role / Device Role / Timing Role: High-side switch modulating primary current to regulate secondary output voltage via optocoupler feedback.

Use Value: Low Q_g (42 nC) enables simple gate drive with low-cost bipolar transistor or integrated controller.

Use Scenario: Upper-leg switch in three-phase IGBT/MOSFET inverter stages for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side power switch in half-bridge leg, commutating motor phase current with body diode freewheeling.

Use Value: 1.5 V V_SD and 6.2 A I_S support efficient synchronous rectification during dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 1.2 Ω, Q_g = 32 nC, TO-220FP package	Lower thermal resistance not available; smaller package limits power density	Preferred where board space is constrained but heatsink access is limited; lower Q_g eases gate drive design
FQP6N60C	600 V, 6.2 A, R_DS(on) = 1.3 Ω, Q_g = 45 nC, TO-220 package	No specified E_AS; lower dV/dt rating (4.5 V/ns); no C_{oss eff.} data	Acceptable for non-avalanche-critical SMPS; avoid in unclamped inductive loads or high-dV/dt environments

Compared with STP6NK60ZFP and FQP6N60C, the IRFBC40ASPBF offers superior avalanche ruggedness and verified 6.0 V/ns dV/dt immunity - making it preferred for high-reliability offline power conversion where transient stress and inductive energy absorption are design-critical.

Availability

IRFBC40ASPBF is available at Aetrix Electronics and suitable for server SMPS, industrial UPS systems, and AC-DC adapters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFBC40ASPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFBC40ASPBF belongs to Vishay's high-voltage planar MOSFET product line, engineered for robustness in offline switch-mode power supplies where avalanche energy handling and dV/dt immunity are essential.

FAQ

What is the maximum continuous drain current rating for IRFBC40ASPBF at 100 °C case temperature?

The IRFBC40ASPBF has a maximum continuous drain current of 3.9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when ambient or heatsink conditions elevate case temperature beyond 25 °C. Designers should verify junction temperature using R_thJC = 1.0 °C/W and actual power dissipation to ensure safe operation within the -55 to +150 °C range.

Does IRFBC40ASPBF have a fully characterized body diode, and what are its key parameters?

Yes, the IRFBC40ASPBF includes a fully characterized intrinsic body diode with V_SD = 1.5 V at I_S = 6.2 A and T_J = 25 °C, t_rr = 431–647 ns, and Q_rr = 1.8–2.8 μC. These values are measured under standardized conditions (I_F = 6.2 A, dI/dt = 100 A/μs), enabling accurate loss modeling in synchronous rectification or half-bridge freewheeling applications where body diode conduction occurs.

Can IRFBC40ASPBF be used in avalanche-mode operation, and what energy level is guaranteed?

Yes, the IRFBC40ASPBF is rated for single-pulse avalanche operation with E_AS = 570 mJ and repetitive avalanche current I_AR = 6.2 A. This rating is validated per test condition b (L = 29.6 mH, R_g = 25 Ω, I_AS = 6.2 A) and allows use in circuits where inductive energy must be absorbed without external clamping - such as certain flyback or forward converter designs with leakage inductance.

What is the gate threshold voltage range for IRFBC40ASPBF, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for IRFBC40ASPBF is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range indicates the minimum gate voltage needed to initiate conduction, confirming it is a standard-level MOSFET requiring ≥10 V for full enhancement. Designers must ensure gate drive exceeds 4.0 V under worst-case conditions to guarantee reliable turn-on, especially at elevated temperatures where V_GS(th) decreases.

Is IRFBC40ASPBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRFBC40ASPBF is RoHS-compliant and halogen-free. The 'PbF' suffix denotes lead (Pb)-free terminations and compliance with Directive 2011/65/EU. This part uses matte tin plating and meets Vishay's material categorization standards per document 99912. No lead-based solder or finishes are present, and the device is suitable for lead-free reflow assembly processes with peak temperatures up to 300 °C for 10 seconds.

IRFBC40ASPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1036 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFBC40ASPBF FAQ

1.How can I place an order for IRFBC40ASPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC40ASPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC40ASPBF reliable?

The price and inventory of IRFBC40ASPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC40ASPBF is usually 5 days.

3.What payment methods are accepted for IRFBC40ASPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC40ASPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC40ASPBF?

IRFBC40ASPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC40ASPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC40ASPBF?

For technical support, including IRFBC40ASPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC40ASPBF requirements.

6.How does Aetrix verify that IRFBC40ASPBF is sourced from the original manufacturer or authorized distributors?

All IRFBC40ASPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC40ASPBF meets industry standards.

7.What is the process for return or replacement of IRFBC40ASPBF?

All IRFBC40ASPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC40ASPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC40ASPBF part is unused and in its original packaging.

Return procedure for IRFBC40ASPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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