Vishay Siliconix IRFBC40ASTRLPBF
- Part No.:
- IRFBC40ASTRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFBC40ASTRLPBF.pdf
- Description:
- MOSFET N-CH 600V 6.2A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:550
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Product details
Overview
IRFBC40ASTRLPBF from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.2 Ω RDS(on) at VGS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS topologies.
For engineers reviewing the IRFBC40ASTRLPBF datasheet, IRFBC40ASTRLPBF pinout, IRFBC40ASTRLPBF application, or IRFBC40ASTRLPBF equivalent, this device is evaluated for rugged unclamped inductive switching, fast diode recovery (trr = 431–647 ns), and stable operation up to 150 °C junction temperature in high-reliability industrial power converters.
Technical Context
This MOSFET employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low Qgd/Qgs ratio (2.0) and characterized Coss eff. = 48 pF support controlled dV/dt and reduced switching loss during turn-off in forward and flyback converters.
The integral body diode is fully specified for reverse recovery (Qrr = 1.8–2.8 μC, trr = 431–647 ns) and rated for repetitive avalanche (IAR = 6.2 A, EAR = 13 mJ), enabling robust operation in circuits with inductive loads and freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC input rectified systems with ≥50 % voltage margin |
| RDS(on) | 1.2 Ω @ VGS = 10 V - enables ≤46 W conduction loss at 6.2 A continuous drain current |
| Qg | 42 nC - determines gate drive power requirement and switching speed in 100–500 kHz SMPS |
| EAS | 570 mJ - specifies maximum single-pulse inductive energy handling without failure |
| trr | 431–647 ns - defines diode recovery window affecting cross-conduction risk in bridge topologies |
| RthJC | 1.0 °C/W - allows 125 W power dissipation with ≤125 °C case-to-junction rise at TC = 25 °C |
| VGS(th) | 2.0–4.0 V - ensures reliable turn-on with standard 10 V gate drivers while avoiding spurious activation |
Pinout & Package
D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline per JEDEC TO-263AB, 14.61–15.88 mm height, 9.65–10.67 mm width, and 8.38–9.65 mm length.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires 10 V drive for full enhancement; max ±30 V rating |
| D | Drain | Main high-side power terminal; electrically and thermally connected to exposed backside metal pad |
| S | Source | Reference node for gate drive and current sensing; ties to power ground in low-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge (Qg = 42 nC) | Reduces driver IC power consumption and simplifies gate drive design for 100–300 kHz switching |
| Fully characterized avalanche ratings | Enables reliable operation in unclamped inductive switching without external snubbers |
| Effective output capacitance (Coss eff. = 48 pF) | Provides accurate timing reference for resonant transition analysis in LLC or ZVS designs |
| Specified body diode recovery (Qrr, trr) | Allows precise estimation of commutation losses and EMI generation in hard-switched half-bridges |
| RoHS-compliant, lead-free construction | Meets global environmental compliance requirements without derating or reliability trade-offs |
Applications
| Server PSU Primary Switch | Industrial UPS Inverter Stage |
|---|---|
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating in single-transistor forward topology with 380–400 V DC bus. IC Role / Device Role / Timing Role: Main high-side switching element handling 6.2 A RMS primary current at 100–200 kHz. Use Value: 570 mJ EAS withstands transformer leakage inductance spikes; 1.2 Ω RDS(on) limits conduction loss to <46 W at full load. | Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure, using full-bridge inverter stage. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification or freewheeling path with controlled body diode recovery. Use Value: 431–647 ns trr and 1.8–2.8 μC Qrr minimize shoot-through risk and reduce EMI during dead-time transitions. |
| Telecom Rectifier Module | EV Charger Auxiliary Power Supply |
Use Scenario: -48 V telecom rectifier with active PFC front-end and isolated DC/DC stage powering base station control logic. IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter generating 12 V/5 V auxiliary rails. Use Value: 600 V VDS accommodates 380 V DC bus with safety margin; RthJC = 1.0 °C/W supports compact heatsink integration. | Use Scenario: Onboard charger auxiliary supply converting 400–800 V battery voltage to 12 V for cooling fans, CAN interface, and MCU. IC Role / Device Role / Timing Role: High-voltage buck or flyback switch operating across wide input range with frequent thermal cycling. Use Value: -55 to +150 °C TJ rating ensures reliability under automotive under-hood thermal stress; 13 mJ EAR handles repetitive line transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 5.5 A, RDS(on) = 1.2 Ω, Qg = 32 nC, TO-220FP package | Lower peak current rating and different thermal profile; no D2PAK footprint compatibility | Preferred where lower gate drive power is critical and through-hole mounting is acceptable |
| IXTH6N60P | 600 V, 6.0 A, RDS(on) = 1.4 Ω, Qg = 38 nC, TO-247 package | Higher RDS(on), larger package, higher RthJC (0.83 °C/W); not drop-in compatible | Selected when higher avalanche ruggedness (EAS = 1000 mJ) outweighs footprint and thermal constraints |
Compared with STP6NK60ZFP and IXTH6N60P, the IRFBC40ASTRLPBF offers optimal balance of D2PAK thermal performance (RthJC = 1.0 °C/W), industry-standard 42 nC gate charge, and validated 570 mJ avalanche capability-making it especially suitable for space-constrained, high-reliability SMPS designs requiring surface-mount assembly.
Availability
IRFBC40ASTRLPBF is available at Aetrix Electronics and suitable for server power supplies, industrial uninterruptible power systems, and telecom rectifier modules requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFBC40ASTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability.
The IRFBC40AS family is part of Vishay's high-voltage power MOSFET product line, engineered for demanding offline switching applications including SMPS, UPS, and industrial motor drives where avalanche capability and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFBC40ASTRLPBF at 100 °C case temperature?
The IRFBC40ASTRLPBF supports 3.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within its 1.0 °C/W junction-to-case thermal resistance. Designers must verify heatsinking to maintain TC ≤ 100 °C under full-load conditions to sustain this current rating in the IRFBC40ASTRLPBF.
Does IRFBC40ASTRLPBF have a fully characterized body diode for synchronous rectification?
Yes, the IRFBC40ASTRLPBF includes full characterization of its intrinsic body diode, including reverse recovery time (trr = 431–647 ns), reverse recovery charge (Qrr = 1.8–2.8 μC), and forward voltage (VSD = 1.5 V at IS = 6.2 A). These parameters are measured and guaranteed per the datasheet, enabling accurate loss modeling in freewheeling and synchronous rectifier applications using the IRFBC40ASTRLPBF.
Is IRFBC40ASTRLPBF RoHS-compliant and halogen-free?
Yes, IRFBC40ASTRLPBF is RoHS-compliant and halogen-free, as confirmed by Vishay's material categorization documentation (www.vishay.com/doc?99912). The "PbF" suffix denotes lead-free termination, and the device meets JEDEC J-STD-609A Class 1 requirements. No exemptions apply, and the full compliance status is documented in the official IRFBC40AS datasheet revision E (S21-0943-Rev. E).
What is the gate-source threshold voltage range for IRFBC40ASTRLPBF?
The gate-source threshold voltage (VGS(th)) for IRFBC40ASTRLPBF is specified as 2.0 V minimum to 4.0 V maximum at TJ = 25 °C and ID = 250 μA. This range ensures consistent turn-on behavior with standard 10 V gate drivers while preventing false triggering from noise or leakage currents. The parameter is production-tested and guaranteed across the full operating temperature range of the IRFBC40ASTRLPBF.
Can IRFBC40ASTRLPBF be used in avalanche mode for clamping protection?
Yes, IRFBC40ASTRLPBF is fully rated for repetitive avalanche operation with IAR = 6.2 A and EAR = 13 mJ, and single-pulse avalanche energy of EAS = 570 mJ. These values are tested and guaranteed per the datasheet, allowing intentional use in clamping circuits-such as snubberless flyback or inductive load switching-without requiring external protection components in the IRFBC40ASTRLPBF design.
IRFBC40ASTRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1036 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRFBC40ASTRLPBF FAQ
1.How can I place an order for IRFBC40ASTRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFBC40ASTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFBC40ASTRLPBF reliable?
The price and inventory of IRFBC40ASTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC40ASTRLPBF is usually 5 days.
3.What payment methods are accepted for IRFBC40ASTRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC40ASTRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFBC40ASTRLPBF?
IRFBC40ASTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFBC40ASTRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFBC40ASTRLPBF?
For technical support, including IRFBC40ASTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC40ASTRLPBF requirements.
6.How does Aetrix verify that IRFBC40ASTRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFBC40ASTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC40ASTRLPBF meets industry standards.
7.What is the process for return or replacement of IRFBC40ASTRLPBF?
All IRFBC40ASTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC40ASTRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFBC40ASTRLPBF part is unused and in its original packaging.
Return procedure for IRFBC40ASTRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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