Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBC40ASTRRPBF

Name: IRFBC40ASTRRPBF
Brand: Vishay Siliconix
SKU: IRFBC40ASTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFBC40ASTRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFBC40ASTRRPBF.pdf

Description:: MOSFET N-CH 600V 6.2A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,819

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFBC40ASTRRPBF from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS and UPS systems.

For engineers reviewing the IRFBC40ASTRRPBF datasheet, IRFBC40ASTRRPBF pinout, IRFBC40ASTRRPBF application, or IRFBC40ASTRRPBF equivalent, key selection criteria include its 600 V blocking capability, rugged unclamped inductive switching performance, low Q_gd/Q_g ratio for hard-switching stability, and D2PAK thermal resistance of 1.0 °C/W junction-to-case.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage, medium-current applications. Its gate structure delivers low Q_g (42 nC) and balanced Q_gs/Q_gd (10 nC / 20 nC), supporting efficient drive with standard gate drivers while maintaining dV/dt immunity up to 6.0 V/ns.

The integrated body diode exhibits 431–647 ns reverse recovery time and 1.8–2.8 μC Q_rr, enabling operation in topologies requiring freewheeling conduction-such as single-transistor forward converters-without external diode supplementation under defined dI/dt and temperature conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC mains-derived DC bus with ≥50 % safety margin
R_DS(on)	1.2 Ω @ V_GS = 10 V - enables ≤45 W conduction loss at 6.2 A continuous drain current
Q_g	42 nC - compatible with low-power gate drivers (e.g., UCC27531) without external buffering
E_AS	570 mJ - withstands unclamped inductive energy in flyback or forward converter turn-off events
R_thJC	1.0 °C/W - allows 125 W power dissipation with ≤125 °C junction rise above 25 °C case temperature
dV/dt rating	6.0 V/ns - ensures reliable operation in high-dV/dt environments without spurious turn-on
I_D (T_C = 100 °C)	3.9 A - defines maximum continuous current under industrial ambient thermal constraints

Pinout & Package

D2PAK (TO-263) package with exposed drain tab on underside for direct heatsink mounting; thermally enhanced plastic body measuring 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), JEDEC-compliant outline.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 10 V logic-level drive; requires <100 nA leakage current budget
D	Drain	Main high-side switching node; electrically connected to exposed metal tab for thermal and electrical path to heatsink
S	Source	Power return reference; ties to PCB ground plane and gate driver return to minimize common-source inductance

Key Features

Feature	Design Value
Low Q_g (42 nC)	Reduces gate drive power loss and simplifies driver selection in high-frequency SMPS designs
Fully characterized C_{oss eff.} (48 pF)	Enables accurate snubber design and soft-switching analysis across 0–480 V V_DS range
Specified avalanche voltage/current	Validates robustness in unclamped inductive switching without derating assumptions
Improved dynamic dV/dt ruggedness	Prevents false triggering during fast transient events in high-noise power stage environments
RoHS-compliant, halogen-free construction	Meets IPC-1752A material declaration requirements for industrial and telecom end equipment

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with 380 V DC bus. IC Role / Device Role / Timing Role: Main switch in single-transistor forward topology handling primary-side energy transfer and reset. Use Value: 600 V rating accommodates 380 V bus with margin; 570 mJ E_AS sustains safe operation during transformer saturation faults.	Use Scenario: 3 kVA online UPS inverting 400 V DC battery bank to 230 V AC output. IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter leg managing bidirectional power flow and battery charging. Use Value: 6.2 A I_D and 1.2 Ω R_DS(on) support continuous 1.5 kW per leg; dV/dt immunity prevents shoot-through during bus transients.
Telecom Rectifier Module	EV Charger Auxiliary Power Supply
Use Scenario: -48 V telecom rectifier converting 380 V DC bus to isolated -48 V output using active clamp forward. IC Role / Device Role / Timing Role: Clamped switch managing energy recycling during reset phase with precise timing control. Use Value: Low Q_gd/Q_g ratio (0.48) improves timing predictability and reduces sensitivity to gate resistance variation.	Use Scenario: 15 W auxiliary supply in liquid-cooled EV DC fast charger providing isolated bias for gate drivers and MCU. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating at 250 kHz with synchronous rectification secondary. Use Value: 42 nC Q_g enables efficient drive from low-cost 5 V microcontroller GPIO; 150 °C T_J(max) supports compact heatsink design.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with 380 V DC bus.

IC Role / Device Role / Timing Role: Main switch in single-transistor forward topology handling primary-side energy transfer and reset.

Use Value: 600 V rating accommodates 380 V bus with margin; 570 mJ E_AS sustains safe operation during transformer saturation faults.

Use Scenario: 3 kVA online UPS inverting 400 V DC battery bank to 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter leg managing bidirectional power flow and battery charging.

Use Value: 6.2 A I_D and 1.2 Ω R_DS(on) support continuous 1.5 kW per leg; dV/dt immunity prevents shoot-through during bus transients.

Telecom Rectifier Module

EV Charger Auxiliary Power Supply

Use Scenario: -48 V telecom rectifier converting 380 V DC bus to isolated -48 V output using active clamp forward.

IC Role / Device Role / Timing Role: Clamped switch managing energy recycling during reset phase with precise timing control.

Use Value: Low Q_gd/Q_g ratio (0.48) improves timing predictability and reduces sensitivity to gate resistance variation.

Use Scenario: 15 W auxiliary supply in liquid-cooled EV DC fast charger providing isolated bias for gate drivers and MCU.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating at 250 kHz with synchronous rectification secondary.

Use Value: 42 nC Q_g enables efficient drive from low-cost 5 V microcontroller GPIO; 150 °C T_J(max) supports compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 1.25 Ω, Q_g = 32 nC, TO-220FP package	Lower thermal mass and higher R_thJA (62 °C/W); unsuitable for >25 W continuous dissipation without forced air	Select when board space permits TO-220FP and lower gate charge is prioritized over avalanche robustness
IXTH6N60P	600 V, 6.0 A, R_DS(on) = 1.4 Ω, Q_g = 48 nC, TO-247 package	Higher R_DS(on) increases conduction loss by ~17 %; larger TO-247 footprint requires PCB rework	Select when higher peak current (IDM = 24 A) and superior heatsinking via TO-247 are required

Compared with STP6NK60ZFP and IXTH6N60P, IRFBC40ASTRRPBF offers optimal balance of avalanche energy (570 mJ), D2PAK thermal performance (R_thJC = 1.0 °C/W), and gate drive simplicity (Q_g = 42 nC), making it preferred for compact, high-reliability offline SMPS where layout area and fault tolerance are critical.

Availability

IRFBC40ASTRRPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFBC40ASTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBC40AS family targets high-voltage, medium-current switching in offline power conversion, emphasizing avalanche ruggedness, gate drive efficiency, and thermal performance in surface-mount packages.

FAQ

What is the maximum continuous drain current for IRFBC40ASTRRPBF at 100 °C case temperature?

The IRFBC40ASTRRPBF supports 3.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 6.2 A rating at 25 °C case temperature, based on a linear derating factor of 1.0 W/°C and R_thJC = 1.0 °C/W. Designers must ensure heatsink interface resistance and ambient conditions maintain case temperature ≤100 °C for sustained operation.

Does IRFBC40ASTRRPBF have a fully characterized body diode for synchronous rectification use?

The IRFBC40ASTRRPBF includes full characterization of its intrinsic body diode, including V_SD = 1.5 V at I_S = 6.2 A, t_rr = 431–647 ns, and Q_rr = 1.8–2.8 μC at T_J = 25 °C. However, it is not optimized for synchronous rectification due to relatively high Q_rr and lack of tailored soft-recovery design; external Schottky diodes or dedicated SR controllers are recommended for high-efficiency synchronous topologies.

What is the gate-source voltage rating for IRFBC40ASTRRPBF, and can it be driven directly from a 5 V microcontroller?

The IRFBC40ASTRRPBF has a ±30 V gate-source voltage rating but requires V_GS ≥ 10 V for full enhancement (R_DS(on) = 1.2 Ω). Driving it directly from a 5 V microcontroller will result in incomplete turn-on and excessive conduction loss, as V_GS(th) ranges from 2.0 V to 4.0 V only-insufficient for low-resistance operation. A level-shifted gate driver or dedicated MOSFET driver IC is required for reliable switching.

How does the effective output capacitance (C_{oss eff.}) of IRFBC40ASTRRPBF impact snubber design in a 480 V application?

The IRFBC40ASTRRPBF specifies C_{oss eff.} = 48 pF across V_DS = 0–480 V, representing the fixed capacitance yielding equivalent charging time as actual nonlinear C_oss. This value enables accurate calculation of turn-off losses and snubber capacitor sizing-e.g., a 1 nF RC snubber with 100 Ω resistor limits peak V_DS overshoot to <10 % during 6.2 A turn-off in a 480 V bus application.

Is IRFBC40ASTRRPBF suitable for use in automotive under-hood applications?

The IRFBC40ASTRRPBF operates across -55 °C to +150 °C junction temperature and meets RoHS/halogen-free requirements, but it is not AEC-Q101 qualified. While its electrical and thermal specs meet many under-hood stress conditions, Vishay does not certify IRFBC40ASTRRPBF for automotive safety-critical systems. For such applications, designers must perform full qualification per AEC-Q101 and consult Vishay's automotive-grade alternatives like SQM60N06-10L.

IRFBC40ASTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1036 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFBC40ASTRRPBF FAQ

1.How can I place an order for IRFBC40ASTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC40ASTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC40ASTRRPBF reliable?

The price and inventory of IRFBC40ASTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC40ASTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFBC40ASTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC40ASTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC40ASTRRPBF?

IRFBC40ASTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC40ASTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC40ASTRRPBF?

For technical support, including IRFBC40ASTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC40ASTRRPBF requirements.

6.How does Aetrix verify that IRFBC40ASTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFBC40ASTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC40ASTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFBC40ASTRRPBF?

All IRFBC40ASTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC40ASTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC40ASTRRPBF part is unused and in its original packaging.

Return procedure for IRFBC40ASTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …