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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBC40LCPBF-BE3

Name: IRFBC40LCPBF-BE3
Brand: Vishay Siliconix
SKU: IRFBC40LCPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBC40LCPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBC40LCPBF-BE3.pdf

Description:: MOSFET N-CH 600V 6.2A TO220AB

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Product details

Overview

IRFBC40LCPBF-BE3 from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in TO-220AB package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and offline SMPS.

For engineers reviewing the IRFBC40LCPBF-BE3 datasheet, IRFBC40LCPBF-BE3 pinout, IRFBC40LCPBF-BE3 application, or IRFBC40LCPBF-BE3 equivalent, key selection criteria include its ultra-low Q_g/Q_gd ratio (39 nC / 19 nC), enhanced ±30 V gate rating, and proven ruggedness in unclamped inductive switching up to 530 mJ single-pulse avalanche energy.

Technical Context

This device employs Vishay's LCDMOS technology to achieve significantly lower gate charge versus conventional power MOSFETs without added cost-enabling reduced gate drive requirements and lower switching losses. Its dynamic parameters (C_iss = 1100 pF, C_oss = 140 pF, C_rss = 15 pF) support stable operation at multi-MHz frequencies under high-current conditions.

The IRFBC40LCPBF-BE3 integrates a robust body diode with t_rr = 440–680 ns and Q_rr = 2.1–3.2 μC, and is rated for repetitive avalanche current (I_AR = 6.2 A) and peak dV/dt of 3.0 V/ns-making it suitable for hard-switched topologies where diode recovery and voltage transients are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus.
R_DS(on) @ V_GS = 10 V	1.2 Ω max - enables low conduction loss at 6.2 A continuous drain current (T_C = 25 °C).
Q_g	39 nC max - reduces gate driver power and allows use of smaller, lower-cost drivers in high-frequency designs.
Q_gd / Q_gs	19 nC / 10 nC - low Miller charge improves noise immunity and enables faster, more controllable turn-off.
E_AS	530 mJ - withstands unclamped inductive energy in flyback or forward converter snubberless operation.
t_rr & Q_rr	440–680 ns / 2.1–3.2 μC - minimizes diode reverse recovery loss and associated voltage overshoot in synchronous rectification.
P_D @ T_C = 25 °C	125 W - supports high-power density thermal design with standard TO-220 heatsinking.

Pinout & Package

IRFBC40LCPBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), optimized for mechanical mounting and thermal transfer to heatsinks. The package meets RoHS-compliant and halogen-free requirements per ordering code -BE3.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input terminal	Accepts ±30 V gate drive; low 10 nC Q_gs enables fast turn-on with minimal driver stress.
D (Drain)	High-voltage power output	Connected to internal die substrate and metal tab; requires electrical isolation when mounted to heatsink.
S (Source)	Power return and reference node	Serves as common reference for gate drive and current sensing; low-inductance source leads (L_S = 7.5 nH) reduce switching ringing.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 39 nC enables <5 W gate drive power at 500 kHz, reducing driver IC size and cost.
Enhanced V_GS rating	±30 V gate tolerance prevents oxide damage during layout parasitic transients or gate driver overshoot.
Repetitive avalanche rated	I_AR = 6.2 A and E_AR = 13 mJ allow reliable operation in non-clamped inductive circuits without external snubbers.
Low Crss/Ciss ratio	Crss/Ciss ≈ 1.4% minimizes Miller effect, improving stability in high-dV/dt environments like PFC stages.
High-frequency optimized capacitance	C_iss = 1100 pF, C_oss = 140 pF - enables clean switching waveforms up to 2 MHz in resonant topologies.

Applications

Offline AC-DC Adapters	Industrial DC-DC Converters
Use Scenario: 65–100 W universal-input flyback converter operating at 65–130 kHz. IC Role / Device Role / Timing Role: Primary-side switching transistor handling 600 V blocking and 6.2 A peak current. Use Value: Low Q_g and Q_gd reduce switching loss by ~22% vs. legacy 600 V MOSFETs, enabling >90% efficiency at full load.	Use Scenario: 48 V input, 12 V/10 A isolated forward converter in factory automation power modules. IC Role / Device Role / Timing Role: Main switch in primary-side active clamp forward topology. Use Value: Repetitive avalanche rating ensures reliability during transient overloads and startup surges without derating.
LED Driver Power Stages	UPS / Battery Backup Systems
Use Scenario: High-brightness LED streetlight driver with active PFC + LLC half-bridge stage. IC Role / Device Role / Timing Role: PFC boost switch operating continuously at 65–100 kHz with 400 V DC link. Use Value: Low C_oss (140 pF) and high dV/dt immunity (3.0 V/ns) suppress voltage spikes during zero-current switching transitions.	Use Scenario: Online UPS inverter stage converting 360–400 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage handling bidirectional energy flow. Use Value: Robust body diode (t_rr = 440–680 ns) supports freewheeling during dead-time without external diodes, simplifying layout.

Offline AC-DC Adapters

Industrial DC-DC Converters

Use Scenario: 65–100 W universal-input flyback converter operating at 65–130 kHz.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling 600 V blocking and 6.2 A peak current.

Use Value: Low Q_g and Q_gd reduce switching loss by ~22% vs. legacy 600 V MOSFETs, enabling >90% efficiency at full load.

Use Scenario: 48 V input, 12 V/10 A isolated forward converter in factory automation power modules.

IC Role / Device Role / Timing Role: Main switch in primary-side active clamp forward topology.

Use Value: Repetitive avalanche rating ensures reliability during transient overloads and startup surges without derating.

LED Driver Power Stages

UPS / Battery Backup Systems

Use Scenario: High-brightness LED streetlight driver with active PFC + LLC half-bridge stage.

IC Role / Device Role / Timing Role: PFC boost switch operating continuously at 65–100 kHz with 400 V DC link.

Use Value: Low C_oss (140 pF) and high dV/dt immunity (3.0 V/ns) suppress voltage spikes during zero-current switching transitions.

Use Scenario: Online UPS inverter stage converting 360–400 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage handling bidirectional energy flow.

Use Value: Robust body diode (t_rr = 440–680 ns) supports freewheeling during dead-time without external diodes, simplifying layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 1.2 Ω, Q_g = 32 nC, TO-220FP (full-pack); no avalanche rating.	Lacks repetitive avalanche capability; unsuitable for unclamped inductive loads.	Prefer IRFBC40LCPBF-BE3 where avalanche robustness is required in flyback or forward converters.
FQP6N60C	600 V, 6.2 A, R_DS(on) = 1.4 Ω, Q_g = 42 nC, TO-220; avalanche rated but E_AS = 350 mJ (lower).	Higher R_DS(on) and lower E_AS limit efficiency and surge margin in high-reliability industrial systems.	IRFBC40LCPBF-BE3 offers superior avalanche energy (530 mJ) and lower gate charge for tighter control loop response.

Compared with STP6NK60ZFP and FQP6N60C, the IRFBC40LCPBF-BE3 delivers higher avalanche ruggedness, lower Q_gd-to-Q_g ratio for improved turn-off control, and guaranteed ±30 V gate rating-making it the preferred choice for mission-critical, high-frequency switch-mode power designs requiring long-term reliability without snubber circuits.

Availability

IRFBC40LCPBF-BE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for IRFBC40LCPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFBC40LCPBF-BE3 belongs to Vishay's LCDMOS low-charge power MOSFET family-engineered specifically to reduce gate drive loss and improve system efficiency in high-frequency switching power supplies without compromising ruggedness.

FAQ

What is the maximum continuous drain current for IRFBC40LCPBF-BE3 at 100 °C case temperature?

The IRFBC40LCPBF-BE3 supports 3.9 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within R_thJC = 1.0 °C/W junction-to-case thermal resistance. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions for sustained reliability of the IRFBC40LCPBF-BE3.

Does IRFBC40LCPBF-BE3 have a fully rated avalanche capability?

Yes, the IRFBC40LCPBF-BE3 is explicitly rated for repetitive avalanche operation: I_AR = 6.2 A and E_AR = 13 mJ (repetitive), plus E_AS = 530 mJ (single-pulse). These values are validated per test conditions in Figure 12 and note "a" of the datasheet. This makes the IRFBC40LCPBF-BE3 suitable for unclamped inductive switching in flyback, forward, and resonant converters without external protection components.

What is the gate threshold voltage range for IRFBC40LCPBF-BE3?

The gate-source threshold voltage (V_GS(th)) for IRFBC40LCPBF-BE3 is specified from 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious gate excitation. The IRFBC40LCPBF-BE3 is not a logic-level device; it requires ≥8 V for full enhancement and optimal R_DS(on) performance.

How does the body diode performance of IRFBC40LCPBF-BE3 compare to standard MOSFETs?

The IRFBC40LCPBF-BE3 features an optimized integral body diode with t_rr = 440–680 ns and Q_rr = 2.1–3.2 μC at T_J = 25 °C, significantly faster than many general-purpose 600 V MOSFETs. Its V_SD = 1.5 V at I_S = 6.2 A enables low conduction loss during freewheeling. This performance allows the IRFBC40LCPBF-BE3 to replace discrete diodes in some synchronous rectifier or active clamp configurations.

Is IRFBC40LCPBF-BE3 compatible with lead-free reflow soldering processes?

Yes, IRFBC40LCPBF-BE3 is lead (Pb)-free and halogen-free, qualified for lead-free soldering with peak temperature up to 300 °C for 10 seconds, per its Soldering Recommendations. The "-BE3" suffix explicitly denotes compliance with J-STD-020 moisture sensitivity level 1 and JEDEC-standard Pb-free assembly. No special pre-bake or process deviation is required when using the IRFBC40LCPBF-BE3 in standard surface-mount or through-hole reflow lines.

IRFBC40LCPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBC40LCPBF-BE3 FAQ

1.How can I place an order for IRFBC40LCPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC40LCPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC40LCPBF-BE3 reliable?

The price and inventory of IRFBC40LCPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC40LCPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFBC40LCPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC40LCPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC40LCPBF-BE3?

IRFBC40LCPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC40LCPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC40LCPBF-BE3?

For technical support, including IRFBC40LCPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC40LCPBF-BE3 requirements.

6.How does Aetrix verify that IRFBC40LCPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFBC40LCPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC40LCPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFBC40LCPBF-BE3?

All IRFBC40LCPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC40LCPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC40LCPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFBC40LCPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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