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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBE20

Name: IRFBE20
Brand: Vishay Siliconix
SKU: IRFBE20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBE20

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBE20.pdf

Description:: MOSFET N-CH 800V 1.8A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFBE20 from Vishay Siliconix is an 800 V, 1.8 A N-channel power MOSFET in TO-220AB package, featuring 6.5 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating up to 1.8 A - designed for high-voltage flyback and snubberless AC-DC power supplies.

For engineers reviewing the IRFBE20 datasheet, IRFBE20 pinout, IRFBE20 application, or IRFBE20 equivalent, key selection criteria include its 800 V V_DS, low Q_gd/Q_g ratio (21/38 nC), dV/dt ruggedness (2.0 V/ns), body diode t_rr (380–570 ns), and TO-220AB thermal resistance (R_thJC = 2.3 °C/W).

Technical Context

This third-generation planar MOSFET uses a ruggedized silicon structure optimized for unclamped inductive switching, with dynamic dV/dt immunity enabling reliable operation in high-noise SMPS topologies. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (C_iss = 530 pF) support simple drive requirements using standard 10 V gate drivers.

The device integrates a fast-recovery body diode (t_rr = 380–570 ns, Q_rr = 0.94–1.4 μC) and supports linear derating (0.43 W/°C above 25 °C), making it suitable for thermally constrained industrial power converters where junction temperature must stay ≤150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input offline SMPS up to 380 V DC bus.
R_DS(on)	6.5 Ω @ V_GS = 10 V - determines conduction loss in continuous 1.2 A load at 100 °C case temperature.
Q_g	38 nC - defines gate drive energy requirement; enables use with low-power gate drivers like TC4427.
E_AS	180 mJ - specifies single-pulse avalanche robustness during transformer leakage energy dissipation.
t_rr	380–570 ns - impacts diode reverse recovery loss and EMI in discontinuous conduction mode (DCM) flyback.
R_thJC	2.3 °C/W - allows direct heatsink mounting for 54 W P_D dissipation without forced air cooling.
dV/dt	2.0 V/ns - ensures immunity to parasitic turn-on in high-dV/dt environments such as resonant LLC primaries.

Pinout & Package

IRFBE20 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard screw-mount footprint, and 1.1 N·m mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; requires <6.5 Ω series resistance to limit ringing and overshoot.
D (Drain)	High-voltage output node	Connected to internal die substrate and metal tab; electrically tied to heatsink if not isolated.
S (Source)	Power return reference	Serves as common return for gate driver and current sense; low-inductance layout critical for switching stability.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 1.8 A I_AR and 5.4 mJ E_AR without derating - eliminates need for external clamping in margin-critical designs.
Dynamic dV/dt rating	2.0 V/ns immunity - prevents false turn-on during high-slew-rate transients in high-frequency SMPS.
Fast switching	td(on)/tr = 8.2/17 ns, td(off)/tf = 58/27 ns - enables >100 kHz operation with low switching loss in flyback converters.
Ease of paralleling	Positive R_DS(on) temperature coefficient - ensures current sharing stability across multiple devices without ballasting resistors.
Simple drive requirements	V_GS(th) = 2.0–4.0 V and C_iss = 530 pF - compatible with microcontroller GPIO or low-current gate drivers without level-shifting.

Applications

AC-DC Flyback Converter	Snubberless Off-line SMPS
Use Scenario: Universal-input (85–265 V_AC) 15–30 W flyback power supply for industrial sensors and IoT gateways. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling; operates in DCM with 65–100 kHz switching frequency. Use Value: 800 V V_DS and 180 mJ E_AS eliminate need for RC snubber, reducing BOM count and improving efficiency by ~1.2% at full load.	Use Scenario: Compact wall-adaptor design for medical auxiliary power with no external snubber components. IC Role / Device Role / Timing Role: Main switching element in quasi-resonant (QR) flyback topology; leverages body diode t_rr for valley-switching detection. Use Value: 380–570 ns t_rr and 0.94–1.4 μC Q_rr enable precise zero-voltage switching (ZVS) timing, reducing EMI and improving light-load efficiency.
Industrial Motor Control Snubber	High-Voltage DC Link Protection
Use Scenario: Overvoltage suppression circuit protecting 400 V DC bus in brushless DC motor drives during regenerative braking. IC Role / Device Role / Timing Role: Avalanche-clamping switch absorbing inductive kickback energy from motor windings. Use Value: Repetitive 5.4 mJ E_AR and 1.8 A I_AR allow sustained clamping without thermal runaway, replacing discrete TVS + Zener solutions.	Use Scenario: Crowbar protection for programmable DC power supplies operating up to 600 V DC output. IC Role / Device Role / Timing Role: Fast-acting overvoltage shunt switch triggered by comparator circuit upon fault detection. Use Value: 2.0 V/ns dV/dt rating ensures stable triggering without false trips during normal line transients, improving system reliability.

AC-DC Flyback Converter

Snubberless Off-line SMPS

Use Scenario: Universal-input (85–265 V_AC) 15–30 W flyback power supply for industrial sensors and IoT gateways.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling; operates in DCM with 65–100 kHz switching frequency.

Use Value: 800 V V_DS and 180 mJ E_AS eliminate need for RC snubber, reducing BOM count and improving efficiency by ~1.2% at full load.

Use Scenario: Compact wall-adaptor design for medical auxiliary power with no external snubber components.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant (QR) flyback topology; leverages body diode t_rr for valley-switching detection.

Use Value: 380–570 ns t_rr and 0.94–1.4 μC Q_rr enable precise zero-voltage switching (ZVS) timing, reducing EMI and improving light-load efficiency.

Industrial Motor Control Snubber

High-Voltage DC Link Protection

Use Scenario: Overvoltage suppression circuit protecting 400 V DC bus in brushless DC motor drives during regenerative braking.

IC Role / Device Role / Timing Role: Avalanche-clamping switch absorbing inductive kickback energy from motor windings.

Use Value: Repetitive 5.4 mJ E_AR and 1.8 A I_AR allow sustained clamping without thermal runaway, replacing discrete TVS + Zener solutions.

Use Scenario: Crowbar protection for programmable DC power supplies operating up to 600 V DC output.

IC Role / Device Role / Timing Role: Fast-acting overvoltage shunt switch triggered by comparator circuit upon fault detection.

Use Value: 2.0 V/ns dV/dt rating ensures stable triggering without false trips during normal line transients, improving system reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.8 Ω R_DS(on), 32 nC Q_g, SuperFET II technology	Higher R_DS(on) increases conduction loss but lower Q_g improves switching efficiency at >200 kHz	Prefer for higher-frequency QR flyback where gate drive loss dominates; avoid in thermally limited enclosures.
FQP8N80C	800 V, 7.0 Ω R_DS(on), 42 nC Q_g, standard planar process	Higher Q_g demands stronger gate driver; no specified dV/dt rating or avalanche data	Acceptable for cost-sensitive non-avalanche-critical applications; verify dV/dt immunity in final layout.

Compared with STP8NK80ZFP and FQP8N80C, the IRFBE20 offers superior avalanche ruggedness (180 mJ E_AS) and proven dV/dt immunity (2.0 V/ns), making it preferred for unclamped inductive loads and noise-prone industrial environments - though its 6.5 Ω R_DS(on) delivers lower conduction loss than both alternatives at 100 °C.

Availability

IRFBE20 is available at Aetrix Electronics and suitable for AC-DC flyback converters, snubberless off-line SMPS, and industrial motor control snubbers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFBE20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBE20 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, cost-effective switching in offline power conversion systems up to 50 W - emphasizing avalanche survivability, thermal stability, and ease of layout.

FAQ

What is the maximum continuous drain current for IRFBE20 at 100 °C case temperature?

The IRFBE20 supports 1.2 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature. The IRFBE20 must be mounted on an adequately sized heatsink to maintain this current capability under sustained load conditions.

Does IRFBE20 have a fully rated avalanche capability, and what are the test conditions?

Yes, the IRFBE20 is repetitively avalanche rated: I_AR = 1.8 A and E_AR = 5.4 mJ under pulsed conditions (T_J ≤ 150 °C). Single-pulse avalanche energy is 180 mJ, tested with V_DD = 50 V, L = 104 mH, R_g = 25 Ω, and I_AS = 1.8 A. These values are confirmed in the Vishay S21-0868 datasheet and apply directly to the IRFBE20 part number.

What is the gate-source threshold voltage range for IRFBE20, and how does it affect drive compatibility?

The IRFBE20 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA, making it compatible with standard 5 V and 10 V logic-level gate drivers. This threshold ensures reliable turn-on with typical microcontroller outputs or dedicated MOSFET drivers without requiring level-shifting. The IRFBE20's low threshold also contributes to its simple drive requirements and ease of paralleling.

Can IRFBE20 be used in place of IRFBE30, and what are the key differences?

No - IRFBE20 and IRFBE30 are distinct parts: IRFBE20 is rated for 800 V V_DS and 1.8 A I_D, while IRFBE30 is rated for 1000 V V_DS and 1.4 A I_D. Their R_DS(on) values differ (6.5 Ω vs. 10.5 Ω), and avalanche energies are not interchangeable. Substituting IRFBE20 for IRFBE30 risks overvoltage failure in 1000 V applications. The IRFBE20 is not a drop-in replacement for IRFBE30.

What is the body diode reverse recovery time (t_rr) of IRFBE20, and why does it matter in flyback designs?

The IRFBE20 body diode t_rr is 380–570 ns at T_J = 25 °C, I_F = 1.8 A, and dI/dt = 100 A/μs. In flyback converters, this parameter directly affects switching loss, EMI generation, and ZVS timing accuracy. A shorter t_rr reduces tail current and associated losses - the IRFBE20's value enables efficient operation in quasi-resonant topologies where precise valley detection is required.

IRFBE20 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBE20 FAQ

1.How can I place an order for IRFBE20 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBE20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBE20 reliable?

The price and inventory of IRFBE20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBE20 is usually 5 days.

3.What payment methods are accepted for IRFBE20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBE20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBE20?

IRFBE20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBE20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBE20?

For technical support, including IRFBE20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBE20 requirements.

6.How does Aetrix verify that IRFBE20 is sourced from the original manufacturer or authorized distributors?

All IRFBE20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBE20 meets industry standards.

7.What is the process for return or replacement of IRFBE20?

All IRFBE20 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBE20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBE20 part is unused and in its original packaging.

Return procedure for IRFBE20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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