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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBE20PBF

Name: IRFBE20PBF
Brand: Vishay Siliconix
SKU: IRFBE20PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBE20PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBE20PBF.pdf

Description:: MOSFET N-CH 800V 1.8A TO220AB

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Product details

Overview

IRFBE20PBF from Vishay Siliconix is an 800 V, 1.8 A N-channel power MOSFET in TO-220AB package, featuring 6.5 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating. It serves as a high-voltage switching element in offline SMPS, AC-DC adapters, and industrial motor controls where ruggedness and fast turn-off are critical.

For engineers reviewing the IRFBE20PBF datasheet, IRFBE20PBF pinout, IRFBE20PBF application, or IRFBE20PBF equivalent, key selection criteria include its 800 V V_DS, 1.8 A continuous drain current at T_C = 25 °C, 2.3 °C/W junction-to-case thermal resistance, and 2.0 V/ns peak diode recovery dV/dt capability - all verified per Vishay S21-0868-Rev. C.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for unclamped inductive switching with 180 mJ single-pulse avalanche energy and 5.4 mJ repetitive avalanche energy. Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_g ratio (21/38 nC) support stable hard-switching operation under high dV/dt stress.

The MOSFET integrates a robust body diode with 380–570 ns reverse recovery time and 0.94–1.4 μC Q_rr, enabling reliable freewheeling in flyback and forward converters. Thermal design is supported by a low R_thJC of 2.3 °C/W and flat-mounting interface (R_thCS = 0.50 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in 400 VAC rectified bus applications without derating.
R_DS(on)	6.5 Ω @ V_GS = 10 V - determines conduction loss in low-current, high-voltage topologies like auxiliary supplies.
I_D (continuous)	1.8 A @ T_C = 25 °C - defines maximum steady-state current before thermal limiting at heatsink interface.
Q_g	38 nC - sets gate drive power requirement and influences switching speed in 50–100 kHz SMPS designs.
E_AS	180 mJ - enables safe operation during transient overloads or inductive kickback without device failure.
dV/dt (diode)	2.0 V/ns - ensures immunity to false turn-on during fast voltage transients across the body diode.
R_thJC	2.3 °C/W - allows direct thermal path modeling from die to heatsink for reliability-critical industrial use.

Pinout & Package

IRFBE20PBF uses the standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and compatibility with industry-standard mounting hardware (6-32 or M3 screw, 10 lbf·in torque). The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold range 2.0–4.0 V enables compatibility with standard PWM controllers.
D (Drain)	High-voltage output node	Connected to TO-220AB metal tab; requires electrical isolation when mounted to heatsink.
S (Source)	Power return / reference	Serves as common return for gate drive and load current; establishes local ground reference for control circuitry.

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands 1.8 A repetitive avalanche current and 5.4 mJ energy without degradation - eliminates need for external snubbers in margin-critical designs.
Dynamic dV/dt rating	2.0 V/ns peak diode recovery dV/dt tolerance prevents spurious turn-on during fast voltage transitions in high-noise environments.
Fast switching	Turn-off delay + fall time = 85 ns (td(off) + tf) at V_DD = 400 V - reduces switching losses in 50–100 kHz power stages.
Low Q_gd/Q_g ratio	55 % (21/38 nC) - improves Miller immunity and enables stable operation with moderate gate resistance (e.g., 18 Ω).
RoHS-compliant, Pb-free	IRFBE20PbF-BE3 variant meets halogen-free and RoHS Directive 2011/65/EU requirements - supports global environmental compliance programs.

Applications

Offline AC-DC Adapters	Flyback SMPS Controllers
Use Scenario: Primary-side switch in universal-input (85–265 VAC) 5–15 W adapter designs with integrated feedback. IC Role / Device Role / Timing Role: High-voltage switching transistor controlling energy transfer via transformer primary winding. Use Value: 800 V V_DS headroom accommodates line surges and reflected output voltage spikes without derating.	Use Scenario: Main power switch in isolated flyback converters for industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Synchronized switching element operating at 65–100 kHz with zero-voltage switching assist. Use Value: Repetitive avalanche rating (5.4 mJ) absorbs leakage inductance energy during each switching cycle, improving long-term reliability.
Industrial Motor Starters	LED Driver Power Stages
Use Scenario: Solid-state relay replacement in 24–48 V DC control circuits driving small AC induction motors. IC Role / Device Role / Timing Role: High-side or half-bridge switch managing inrush current and stall protection. Use Value: 1.8 A continuous current and 7.2 A pulsed rating enable short-duration torque bursts without thermal shutdown.	Use Scenario: Constant-current switching regulator stage in outdoor LED streetlight drivers with surge immunity. IC Role / Device Role / Timing Role: Primary-side MOSFET regulating LED string current through transformer coupling. Use Value: 2.0 V/ns dV/dt rating prevents false triggering during lightning-induced transients on AC mains input.

Offline AC-DC Adapters

Flyback SMPS Controllers

Use Scenario: Primary-side switch in universal-input (85–265 VAC) 5–15 W adapter designs with integrated feedback.

IC Role / Device Role / Timing Role: High-voltage switching transistor controlling energy transfer via transformer primary winding.

Use Value: 800 V V_DS headroom accommodates line surges and reflected output voltage spikes without derating.

Use Scenario: Main power switch in isolated flyback converters for industrial sensors and PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronized switching element operating at 65–100 kHz with zero-voltage switching assist.

Use Value: Repetitive avalanche rating (5.4 mJ) absorbs leakage inductance energy during each switching cycle, improving long-term reliability.

Industrial Motor Starters

LED Driver Power Stages

Use Scenario: Solid-state relay replacement in 24–48 V DC control circuits driving small AC induction motors.

IC Role / Device Role / Timing Role: High-side or half-bridge switch managing inrush current and stall protection.

Use Value: 1.8 A continuous current and 7.2 A pulsed rating enable short-duration torque bursts without thermal shutdown.

Use Scenario: Constant-current switching regulator stage in outdoor LED streetlight drivers with surge immunity.

IC Role / Device Role / Timing Role: Primary-side MOSFET regulating LED string current through transformer coupling.

Use Value: 2.0 V/ns dV/dt rating prevents false triggering during lightning-induced transients on AC mains input.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 Ω R_DS(on), 32 nC Q_g, TO-220FP package (full-pack, no isolated tab)	Lacks isolated drain tab - requires insulating washer for heatsink mounting; lower R_DS(on) not realized due to higher thermal resistance.	Prefer IRFBE20PBF when mechanical isolation and proven avalanche ruggedness are required over marginal R_DS(on) reduction.
IXTP8N80L	800 V, 8.0 Ω R_DS(on), 22 nC Q_g, logic-level gate (V_GS(th) = 1.0–2.5 V)	Lower gate threshold enables direct microcontroller drive but sacrifices avalanche energy (E_AS = 120 mJ vs. 180 mJ).	Choose IRFBE20PBF for high-reliability industrial systems where unclamped inductive stress exceeds 120 mJ.

Compared with STP8NK80ZFP and IXTP8N80L, IRFBE20PBF delivers superior thermal interface (R_thJC = 2.3 °C/W), higher avalanche energy margin (180 mJ), and guaranteed drain-isolated packaging - making it preferred for mission-critical 800 V switching where layout flexibility and ruggedness outweigh minor Q_g or R_DS(on) differences.

Availability

IRFBE20PBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback SMPS controllers, and industrial motor starters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IRFBE20PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability validation.

The IRFBE20PBF belongs to Vishay's high-voltage power MOSFET product line, engineered for ruggedized switching in industrial, telecom, and consumer offline power applications where avalanche capability and thermal stability are essential.

FAQ

What is the maximum continuous drain current rating for IRFBE20PBF at 100 °C case temperature?

The IRFBE20PBF supports 1.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the TO-220AB package's junction-to-case thermal resistance of 2.3 °C/W and maximum junction temperature of 150 °C. Designers must ensure heatsink interface resistance and ambient conditions maintain T_J ≤ 150 °C under full load to avoid exceeding this limit. The IRFBE20PBF datasheet (S21-0868-Rev. C) confirms this value with linear derating factor of 0.43 W/°C above 25 °C.

Is IRFBE20PBF suitable for use in avalanche-mode switching circuits?

Yes, the IRFBE20PBF is explicitly rated for repetitive avalanche operation with I_AR = 1.8 A and E_AR = 5.4 mJ, and single-pulse avalanche energy of 180 mJ. These values are validated per Vishay test conditions (V_DD = 50 V, L = 104 mH, R_g = 25 Ω, T_J ≤ 150 °C). The IRFBE20PBF's ruggedized die design and dynamic dV/dt rating make it appropriate for unclamped inductive switching in flyback, forward, and resonant converters where energy recovery is managed via avalanche rather than external clamping.

What is the gate-source threshold voltage range for IRFBE20PBF, and how does it affect drive requirements?

The IRFBE20PBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, per the Specifications table. This places it in the standard-gate, not logic-level, category. Reliable enhancement requires ≥10 V gate drive to achieve full R_DS(on) = 6.5 Ω. The IRFBE20PBF's moderate threshold minimizes risk of spurious turn-on while maintaining compatibility with common 12 V or 15 V PWM controller outputs - unlike logic-level devices that may require tighter V_GS regulation.

Does IRFBE20PBF have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRFBE20PBF integrates a monolithic body diode with typical reverse recovery time (t_rr) of 380–570 ns and reverse recovery charge (Q_rr) of 0.94–1.4 μC at I_F = 1.8 A and dI/dt = 100 A/μs. These parameters are measured with V_GS = 0 V and T_J = 25 °C. The IRFBE20PBF's body diode supports freewheeling in discontinuous conduction mode (DCM) flyback converters, and its controlled recovery behavior helps minimize voltage overshoot and EMI generation during commutation.

What is the thermal resistance from junction to case (R_thJC) for IRFBE20PBF, and why is it important for thermal design?

The IRFBE20PBF has a maximum junction-to-case thermal resistance (R_thJC) of 2.3 °C/W, as stated in the Thermal Resistance Ratings table. This value defines the dominant thermal path from silicon die to the TO-220AB metal tab, enabling accurate heatsink sizing when combined with case-to-sink (R_thCS = 0.50 °C/W) and heatsink-to-ambient resistance. Because >90 % of IRFBE20PBF's power dissipation flows through this path, precise R_thJC knowledge is essential to prevent junction overheating - especially under sustained 1.8 A operation where P_D can approach 54 W at T_C = 25 °C.

IRFBE20PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBE20PBF FAQ

1.How can I place an order for IRFBE20PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBE20PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBE20PBF reliable?

The price and inventory of IRFBE20PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBE20PBF is usually 5 days.

3.What payment methods are accepted for IRFBE20PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBE20PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBE20PBF?

IRFBE20PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBE20PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBE20PBF?

For technical support, including IRFBE20PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBE20PBF requirements.

6.How does Aetrix verify that IRFBE20PBF is sourced from the original manufacturer or authorized distributors?

All IRFBE20PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBE20PBF meets industry standards.

7.What is the process for return or replacement of IRFBE20PBF?

All IRFBE20PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBE20PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBE20PBF part is unused and in its original packaging.

Return procedure for IRFBE20PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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