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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBE30

Name: IRFBE30
Brand: Vishay Siliconix
SKU: IRFBE30
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBE30

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBE30.pdf

Description:: MOSFET N-CH 800V 4.1A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFBE30 from Vishay Siliconix is an 800 V, 4.1 A N-channel power MOSFET in TO-220AB package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating up to 4.1 A - designed for high-voltage flyback, snubberless AC-DC converters, and industrial motor control.

For engineers reviewing the IRFBE30 datasheet, IRFBE30 pinout, IRFBE30 application, or IRFBE30 equivalent, key selection criteria include its 800 V blocking capability, 260 mJ single-pulse avalanche energy, dV/dt immunity of 2.0 V/ns, and compatibility with standard gate drivers due to simple drive requirements and low Q_gs/Q_gd ratio.

Technical Context

The IRFBE30 employs a third-generation planar vertical DMOS structure optimized for ruggedness and fast switching in hard-switched topologies. Its dynamic dV/dt rating and unclamped inductive switching (UIS) capability enable reliable operation under transient overvoltage conditions without external snubbers.

Thermal design leverages the TO-220AB package's 1.0 °C/W junction-to-case resistance and flat greased mounting interface (R_thCS = 0.50 °C/W), supporting continuous 125 W dissipation at T_C = 25 °C with linear derating above 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in 400 VAC rectified bus applications with 100 % margin over 565 V peak
R_DS(on)	3.0 Ω @ V_GS = 10 V - enables <12.5 W conduction loss at 2.0 A DC current
Q_g	78 nC - determines gate driver current requirement (~1.5 mA avg. for 100 kHz, 10 V swing)
E_AS	260 mJ - allows safe operation during 4.1 A inductive turn-off transients without clamping
dV/dt	2.0 V/ns - resists false triggering during high-slew-rate voltage transients in noisy EMI environments
T_J Range	–55 to +150 °C - qualified for industrial and extended-temperature power supply designs

Pinout & Package

IRFBE30 uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration, and 1.0 mm lead pitch. Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤ ±20 V bias; 9.6 nC Q_gs enables logic-level compatible drive with minimal Miller effect
D	Drain	Main high-voltage output terminal; electrically connected to metal tab - requires isolation from heatsink unless referenced to same potential
S	Source	Power return path and gate reference; internal source inductance (L_S = 7.5 nH) impacts diode recovery ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for 4.1 A I_AR and 13 mJ E_AR - eliminates need for external avalanche protection in cyclic inductive loads
Dynamic dV/dt immunity	2.0 V/ns minimum - prevents spurious turn-on during rapid voltage transitions in high-frequency SMPS
Fast switching with low Q_gd/Q_g	Q_gd = 45 nC / Q_g = 78 nC → 57.7 % - reduces Miller plateau duration and improves controllability
Low thermal resistance	R_thJC = 1.0 °C/W - enables compact heatsinking for 125 W continuous operation at T_C = 25 °C

Applications

Industrial Motor Drives	AC-DC Power Supplies
Use Scenario: Half-bridge high-side switch in 3 kW HVAC blower inverters operating from 380 VAC input. IC Role / Device Role / Timing Role: Main switching element handling 4.1 A RMS load current with 800 V V_DS margin against reflected spikes. Use Value: Repetitive avalanche rating absorbs regenerative energy during sudden load deceleration without failure.	Use Scenario: Primary-side switch in 150 W offline flyback converter for industrial PLC power modules. IC Role / Device Role / Timing Role: High-voltage switching transistor turning on/off at 65 kHz with 400 V V_DS stress. Use Value: 260 mJ E_AS withstands unclamped inductive energy during startup surges and line transients.
Snubberless Lighting Ballasts	High-Voltage DC-DC Converters
Use Scenario: Resonant half-bridge switch in 250 W HID lamp ballast with 600 V bus. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driving resonant tank with 12 ns t_d(on) and 33 ns t_r. Use Value: Low C_oss (310 pF) and Cr_ss (190 pF) minimize switching losses and improve ZVS behavior.	Use Scenario: Step-up switch in 48 V to 380 V DC-DC stage for EV auxiliary power units. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100 kHz with 800 V blocking and 3.0 Ω R_DS(on). Use Value: 150 °C max T_J and –55 °C min T_stg support wide ambient deployment in automotive under-hood environments.

Industrial Motor Drives

AC-DC Power Supplies

Use Scenario: Half-bridge high-side switch in 3 kW HVAC blower inverters operating from 380 VAC input.

IC Role / Device Role / Timing Role: Main switching element handling 4.1 A RMS load current with 800 V V_DS margin against reflected spikes.

Use Value: Repetitive avalanche rating absorbs regenerative energy during sudden load deceleration without failure.

Use Scenario: Primary-side switch in 150 W offline flyback converter for industrial PLC power modules.

IC Role / Device Role / Timing Role: High-voltage switching transistor turning on/off at 65 kHz with 400 V V_DS stress.

Use Value: 260 mJ E_AS withstands unclamped inductive energy during startup surges and line transients.

Snubberless Lighting Ballasts

High-Voltage DC-DC Converters

Use Scenario: Resonant half-bridge switch in 250 W HID lamp ballast with 600 V bus.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driving resonant tank with 12 ns t_d(on) and 33 ns t_r.

Use Value: Low C_oss (310 pF) and Cr_ss (190 pF) minimize switching losses and improve ZVS behavior.

Use Scenario: Step-up switch in 48 V to 380 V DC-DC stage for EV auxiliary power units.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100 kHz with 800 V blocking and 3.0 Ω R_DS(on).

Use Value: 150 °C max T_J and –55 °C min T_stg support wide ambient deployment in automotive under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 1.2 Ω, Q_g = 65 nC - lower on-resistance but higher gate charge density	Better conduction efficiency at >3 A, but less robust dV/dt immunity (1.5 V/ns typical)	Prefer when thermal budget is tight and gate drive strength permits higher Q_g
FQP8N80C	800 V, 7.5 A, R_DS(on) = 1.4 Ω, no specified E_AS or dV/dt rating - lacks avalanche qualification	Lower cost, but unsuitable for unclamped inductive switching or high-dV/dt noise environments	Select only for resistive or soft-switched topologies where avalanche stress is absent

Compared with STP8NK80ZFP and FQP8N80C, the IRFBE30 trades higher R_DS(on) for guaranteed 2.0 V/ns dV/dt immunity and 260 mJ E_AS, making it uniquely suited for ruggedized industrial flyback and motor drive designs where transient reliability outweighs conduction loss minimization.

Availability

IRFBE30 is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, snubberless lighting ballasts, and high-voltage DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFBE30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBE30 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for ruggedness and transient immunity in hard-switched AC-DC and motor control applications where avalanche energy absorption and dV/dt immunity are critical.

FAQ

What is the maximum continuous drain current for IRFBE30 at 100 °C case temperature?

The IRFBE30 supports 2.6 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits imposed by the TO-220AB package's R_thJC = 1.0 °C/W and silicon safe operating area. At this condition, conduction loss remains below 20 W assuming R_DS(on) = 3.0 Ω, making IRFBE30 viable for thermally constrained industrial controls where forced air cooling is unavailable.

Does IRFBE30 have a fully rated body diode for synchronous rectification?

No, the IRFBE30's integrated body diode is not rated for synchronous rectification use. Its reverse recovery time (t_rr = 480–720 ns) and Q_rr (1.8–2.7 μC) are typical of standard power MOSFETs, not optimized for zero-voltage switching. The IRFBE30 datasheet specifies IS = 4.1 A continuous source-drain current but does not guarantee soft recovery or low Q_rr - therefore, IRFBE30 should not be used as a synchronous rectifier in high-frequency LLC or SR flyback topologies.

Is IRFBE30 RoHS-compliant and halogen-free?

Yes, the IRFBE30PbF-BE3 variant is both RoHS-compliant and halogen-free, as confirmed in the Vishay ordering information table. The "-BE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction. Standard IRFBE30PbF is Pb-free but not halogen-free. Both variants meet JEDEC J-STD-020 moisture sensitivity level 1 and are qualified for reflow soldering at peak temperatures up to 300 °C for 10 seconds.

What is the gate threshold voltage range for IRFBE30?

The IRFBE30 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA, per its specifications table. This range indicates standard-level (not logic-level) drive compatibility: full enhancement requires ≥10 V gate bias, and operation below 4.5 V risks incomplete turn-on and excessive R_DS(on). The 2.0 V minimum ensures reliable turn-on even with gate driver tolerances and PCB trace drops.

Can IRFBE30 replace IRFBE20 in existing designs?

No, IRFBE30 is not a direct replacement for IRFBE20. While both are 800 V N-channel TO-220AB MOSFETs, IRFBE20 has R_DS(on) = 4.5 Ω and Q_g = 52 nC, whereas IRFBE30 offers lower R_DS(on) (3.0 Ω) but higher Q_g (78 nC). Gate drive requirements increase, and SOA curves differ - especially in avalanche energy (IRFBE20: 190 mJ vs. IRFBE30: 260 mJ). Layout and thermal validation are required before substitution, and IRFBE30 should not be assumed pin-compatible without verifying driver strength and layout parasitics.

IRFBE30 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBE30 FAQ

1.How can I place an order for IRFBE30 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBE30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBE30 reliable?

The price and inventory of IRFBE30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBE30 is usually 5 days.

3.What payment methods are accepted for IRFBE30?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBE30 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBE30?

IRFBE30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBE30 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBE30?

For technical support, including IRFBE30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBE30 requirements.

6.How does Aetrix verify that IRFBE30 is sourced from the original manufacturer or authorized distributors?

All IRFBE30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBE30 meets industry standards.

7.What is the process for return or replacement of IRFBE30?

All IRFBE30 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBE30, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBE30 part is unused and in its original packaging.

Return procedure for IRFBE30:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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