Vishay Siliconix IRFBF20L
- Part No.:
- IRFBF20L
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFBF20L.pdf
- Description:
- MOSFET N-CH 900V 1.7A I2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,063
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Product details
Overview
IRFBF20L from Vishay Siliconix is a 900 V, 1.7 A N-channel power MOSFET in low-profile through-hole I2PAK (TO-262) package, featuring 8.0 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and full avalanche rating-designed for high-voltage flyback and snubberless AC-DC power supplies.
For engineers reviewing the IRFBF20L datasheet, IRFBF20L pinout, IRFBF20L application, or IRFBF20L equivalent, key selection criteria include its 900 V blocking capability, 150 °C junction rating, fast switching (8 ns turn-on delay), rugged unclamped inductive switching performance (180 mJ EAS), and compatibility with high-temperature industrial power converter designs.
Technical Context
This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for cost-effective, thermally robust operation in offline SMPS. Its design integrates a fully rated avalanche structure and dynamic dV/dt immunity (1.5 V/ns), enabling reliable operation under transient overvoltage and inductive load switching.
The IRFBF20L uses planar vertical DMOS technology with an integral body diode (trr = 350–530 ns, Qrr = 0.85–1.3 μC), supporting quasi-resonant and discontinuous conduction mode topologies where diode recovery behavior critically impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 900 V - supports primary-side switching in universal-input (85–265 VAC) offline converters with ≥2× safety margin |
| RDS(on) | 8.0 Ω @ VGS = 10 V - defines conduction loss in 1.7 A continuous drain applications at 25 °C |
| Qg | 38 nC - determines gate drive power requirement and switching speed in hard-switched topologies |
| EAS | 180 mJ - enables robust unclamped inductive switching without external snubbers in flyback/forward designs |
| TJ max | +150 °C - allows operation in sealed or high-ambient industrial environments without derating below 100 °C case temperature |
| dV/dt rating | 1.5 V/ns - suppresses false turn-on during high-slew-rate voltage transients across drain-source |
| ID cont. | 1.7 A @ TC = 25 °C - sets maximum continuous current handling with adequate heatsinking |
Pinout & Package
IRFBF20L is housed in an I2PAK (TO-262) low-profile through-hole package with isolated mounting tab. The package features a single-row 3-lead configuration optimized for manual assembly and high-voltage creepage clearance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level gate drive; 4.7 nC Qgs ensures predictable turn-on timing |
| D (Drain) | High-voltage power output | Connected to primary winding of transformer or DC bus; rated for 900 V repetitive blocking |
| S (Source) | Power return / reference node | Common connection point for gate driver return and current sense resistor; forms body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| Full avalanche rating | 180 mJ single-pulse EAS enables reliable operation without snubber circuits in inductive switching |
| 150 °C operating junction | Supports sustained operation in enclosed industrial power supplies without thermal throttling |
| Dynamic dV/dt immunity | 1.5 V/ns rating prevents spurious turn-on during fast voltage transients in high-noise SMPS environments |
| Low-profile through-hole | I2PAK (TO-262) package provides mechanical stability and thermal path while minimizing board height vs. D2PAK |
| Fast switching | 8 ns turn-on delay + 21 ns rise time enables >100 kHz operation in quasi-resonant flyback converters |
Applications
| Industrial AC-DC Adapters | LED Driver Power Stages |
|---|---|
Use Scenario: 25 W–60 W universal-input offline adapters powering PLC I/O modules and sensors. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology. Use Value: 900 V VDS rating eliminates need for voltage clamping in 265 VAC peak line conditions; 1.5 V/ns dV/dt immunity reduces EMI filter complexity. | Use Scenario: Constant-current LED drivers for street lighting and high-bay fixtures operating from 277 VAC mains. IC Role / Device Role / Timing Role: Primary-side switch in isolated buck-boost or flyback-derived topologies with active PFC front-end. Use Value: 150 °C TJ max enables compact heatsink design in thermally constrained outdoor enclosures; 180 mJ EAS withstands lamp hot-plug surges. |
| Medical Power Supplies | Industrial Motor Control Snubbers |
Use Scenario: Auxiliary power supplies in Class II medical equipment requiring reinforced isolation and low leakage. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier control FET or auxiliary bias supply switch. Use Value: Low IDSS (≤100 μA @ 900 V) minimizes standby power loss; RoHS-compliant Pb-free variant available per ordering code IRFBF20LPbF. | Use Scenario: RC snubber replacement in 3-phase inverter brake chopper stages driving 1–2 HP induction motors. IC Role / Device Role / Timing Role: Unclamped inductive energy clamp switch absorbing regenerative braking energy. Use Value: Fully rated avalanche capability (EAS = 180 mJ, IAR = 1.7 A) eliminates discrete TVS or Zener clamps, reducing BOM count and footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK90ZFP | 900 V, 8.5 Ω RDS(on), 34 nC Qg, TO-220FP package | Higher RDS(on) and lower EAS (120 mJ); requires larger heatsink at same current | Preferred where TO-220FP footprint is fixed and lower gate charge reduces driver losses |
| FQP9N90C | 900 V, 8.0 Ω RDS(on), 42 nC Qg, TO-3P package | Same on-resistance but higher Qg; TO-3P offers superior thermal resistance (RthJC = 1.5 °C/W vs. 2.3 °C/W) | Chosen when thermal performance dominates over board height and layout space |
Compared with STP9NK90ZFP and FQP9N90C, the IRFBF20L delivers optimal balance of low-profile mounting, industry-standard I2PAK footprint, and high avalanche ruggedness-making it especially suitable for space-constrained industrial power supplies where reliability under transient stress is critical.
Availability
IRFBF20L is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and medical auxiliary supplies requiring stable component supply and long-term manufacturability.
Supply support for IRFBF20L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFBF20L belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered specifically for demanding offline switch-mode power supplies where avalanche capability, thermal stability, and dV/dt immunity are essential.
FAQ
What is the maximum continuous drain current for IRFBF20L at 100 °C case temperature?
The IRFBF20L supports 1.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK (TO-262) package with RthJC = 2.3 °C/W. At TC = 25 °C, the rating increases to 1.7 A. Designers must verify PCB copper area and heatsinking to maintain safe junction temperatures under full-load conditions for the IRFBF20L.
Does IRFBF20L have a fully rated avalanche capability, and what is the test condition?
Yes, the IRFBF20L is fully avalanche rated with a single-pulse avalanche energy (EAS) of 180 mJ. This value is measured under standardized unclamped inductive switching conditions: VDD = 50 V, starting TJ = 25 °C, L = 117 mH, Rg = 25 Ω, and IAS = 1.7 A. The device also supports repetitive avalanche current (IAR) of 1.7 A, confirming robustness in real-world inductive switching applications such as flyback converters.
What is the gate threshold voltage range for IRFBF20L, and how does it affect drive requirements?
The IRFBF20L has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This standard threshold ensures compatibility with conventional 10 V gate drivers while avoiding unintended turn-on from noise. Because the device is not a logic-level MOSFET, it requires a minimum 10 V gate drive to achieve its specified 8.0 Ω RDS(on); operation below 8 V will result in significantly higher conduction losses for the IRFBF20L.
Is IRFBF20L RoHS-compliant, and what are the lead-free ordering options?
Yes, IRFBF20L is available in both lead-free and leaded versions. The RoHS-compliant, halogen-free variant is ordered as SiHFBF20L-GE3; the leaded version is IRFBF20LPbF. Both share identical electrical and thermal specifications. The "GE3" suffix indicates Vishay's standard green (halogen-free) packaging, while "PbF" denotes leaded terminations. Designers selecting the IRFBF20L must specify the correct suffix based on regulatory and assembly requirements.
How does the body diode performance of IRFBF20L impact its use in flyback converters?
The IRFBF20L's integral body diode exhibits trr = 350–530 ns and Qrr = 0.85–1.3 μC at TJ = 25 °C, IS = 1.7 A. In flyback converters, this reverse recovery behavior directly influences switching loss, EMI generation, and voltage overshoot during MOSFET turn-on. The relatively low Qrr helps minimize turn-on losses in DCM operation, but designers should still consider snubber networks or ZVS techniques when operating the IRFBF20L at high frequency or high duty cycle.
IRFBF20L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 54W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRFBF20L FAQ
1.How can I place an order for IRFBF20L through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFBF20L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFBF20L reliable?
The price and inventory of IRFBF20L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF20L is usually 5 days.
3.What payment methods are accepted for IRFBF20L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF20L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFBF20L?
IRFBF20L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFBF20L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFBF20L?
For technical support, including IRFBF20L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF20L requirements.
6.How does Aetrix verify that IRFBF20L is sourced from the original manufacturer or authorized distributors?
All IRFBF20L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF20L meets industry standards.
7.What is the process for return or replacement of IRFBF20L?
All IRFBF20L units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF20L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFBF20L part is unused and in its original packaging.
Return procedure for IRFBF20L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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