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Vishay Siliconix IRFBF20LPBF

Part No.:
IRFBF20LPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRFBF20LPBF.pdf
Description:
MOSFET N-CH 900V 1.7A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,699

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Product details

Overview

IRFBF20LPBF from Vishay Siliconix is a 900 V, 1.7 A N-channel power MOSFET in I2PAK (TO-262) through-hole package, featuring 8.0 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and full avalanche rating-designed for high-voltage flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFBF20LPBF datasheet, IRFBF20LPBF pinout, IRFBF20LPBF application, or IRFBF20LPBF equivalent, key selection criteria include its 900 V blocking capability, low-profile through-hole mounting, 150 °C junction rating, and robust dV/dt immunity (1.5 V/ns) in high-noise industrial power supplies.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for ruggedness and fast switching in unclamped inductive load circuits. Its design integrates fully rated avalanche energy (180 mJ single-pulse), dynamic dV/dt tolerance, and body diode recovery time (350–530 ns) validated under 100 A/μs dI/dt conditions.

The IRFBF20LPBF uses planar silicon technology with optimized gate oxide and termination structure to achieve stable threshold voltage (2.0–4.0 V), low leakage (<100 μA at 900 V), and predictable on-resistance temperature coefficient (+1.1 mV/°C).

Key Specifications

ParameterValue and Actual Design Meaning
VDS900 V - supports primary-side switching in universal-input AC/DC converters up to 380 V DC bus with safety margin.
RDS(on)8.0 Ω @ VGS = 10 V - enables low conduction loss in low-current, high-voltage topologies like auxiliary supplies.
Qg38 nC - determines gate drive power requirement; compatible with standard 10 V logic-level drivers in <100 kHz designs.
EAS180 mJ - ensures reliable operation during unclamped inductive turn-off events without external snubbers.
TJ max150 °C - allows sustained operation in sealed or thermally constrained industrial enclosures without derating below 100 °C case temperature.
dV/dt rating1.5 V/ns - suppresses false turn-on in high-dV/dt environments such as motor drive half-bridges or PFC boost stages.
ID cont @ TC=100°C1.1 A - defines usable current envelope when mounted on minimal copper area (1"² FR-4 PCB).

Pinout & Package

IRFBF20LPBF uses the I2PAK (TO-262) low-profile through-hole package with isolated tab, optimized for manual assembly and thermal relief in space-constrained power supplies. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the exposed metal tab.

Pin/TerminalCircuit RoleDesign Meaning
GGate control inputAccepts 10 V logic-level drive; requires ≤3.4 Ω gate resistance to limit ringing per switching characterization.
DDrain connection / heat sink interfaceTab-connected drain enables direct mounting to heatsink; requires electrical isolation if heatsink is grounded.
SSource reference nodeServes as return path for load current and gate drive loop; critical for minimizing common-source inductance in high-speed switching.

Key Features

FeatureDesign Value
Low-profile through-hole packageI2PAK (TO-262) reduces board height vs. TO-220 while maintaining mechanical stability for hand-soldered industrial assemblies.
150 °C operating junction temperatureEnables deployment in sealed power adapters or outdoor-rated equipment without active cooling or derating penalties.
Fully avalanche ratedGuarantees survivability under repetitive unclamped inductive switching stress without parameter shift or failure.
Dynamic dV/dt rating1.5 V/ns immunity prevents spurious turn-on in high-noise gate drive paths typical of multi-kW inverters.
RoHS-compliant, lead-freeMeets global environmental regulations with SnAgCu termination; compatible with standard reflow and wave soldering profiles.

Applications

Industrial Flyback ConvertersOffline Auxiliary Power Supplies

Use Scenario: Primary-side switch in 5–15 W flyback converters powering control circuitry in PLC modules and sensor transmitters.

IC Role / Device Role / Timing Role: High-voltage switching element handling 375 V DC input with 60–100 kHz PWM duty cycling.

Use Value: 900 V VDS provides 2× safety margin over 375 V DC bus; 1.7 A continuous rating supports peak loads during brownout conditions.

Use Scenario: Standby power supply in industrial HMIs and motor drives, delivering isolated 12 V/100 mA to microcontrollers and gate drivers.

IC Role / Device Role / Timing Role: Primary-side MOSFET in discontinuous conduction mode (DCM) flyback with fixed-frequency control.

Use Value: Low Qg (38 nC) minimizes gate drive losses; 150 °C rating ensures reliability across -40 to +85 °C ambient range.

High-Voltage DC-DC IsolatorsCapacitor-Charge Circuits

Use Scenario: Isolated DC-DC converter in battery management systems stepping 400–800 V battery packs down to 12 V for monitoring electronics.

IC Role / Device Role / Timing Role: Primary switch in resonant LLC topology operating at 200–300 kHz with zero-voltage switching.

Use Value: Coss = 55 pF and Qgd/Qgs ratio support efficient ZVS transition; avalanche rating handles transient overvoltage during startup.

Use Scenario: Charging high-voltage capacitors in pulsed laser drivers and X-ray generator power stages.

IC Role / Device Role / Timing Role: Controlled-energy switch discharging stored energy into pulse-forming networks.

Use Value: Single-pulse EAS = 180 mJ limits required external snubbing; body diode reverse recovery (350 ns) enables precise timing control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP9NK90ZFP900 V, 8.5 Ω RDS(on), 35 nC Qg, TO-220FP packageShorter creepage distance; not qualified for >125 °C junction operationPreferred where lower gate charge reduces driver complexity but thermal margin is less critical.
IXTP1R1N90P900 V, 1.1 Ω RDS(on), 45 nC Qg, TO-220 packageHigher current rating (1.8 A) but larger footprint and no low-profile mounting optionSelected when higher continuous current is needed and board height constraints are relaxed.

Compared with STP9NK90ZFP and IXTP1R1N90P, the IRFBF20LPBF offers superior thermal robustness (150 °C rating) and mechanical fit for compact through-hole layouts, though with slightly higher RDS(on) than IXTP1R1N90P and higher Qg than STP9NK90ZFP-making it optimal for thermally demanding, space-constrained auxiliary supplies.

Availability

IRFBF20LPBF is available at Aetrix Electronics and suitable for industrial flyback converters, offline auxiliary power supplies, and high-voltage DC-DC isolators requiring stable component supply and long-term production continuity.

Supply support for IRFBF20LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBF20LPBF belongs to Vishay's high-voltage power MOSFET product line engineered for ruggedness in unclamped inductive switching, targeting offline power conversion, capacitor charging, and industrial control applications.

FAQ

What is the maximum continuous drain current for IRFBF20LPBF at 100 °C case temperature?

The IRFBF20LPBF supports 1.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 1.7 A rating at 25 °C, based on a linear derating factor of 0.43 W/°C and RthJC = 2.3 °C/W. Designers must verify PCB copper area and heatsinking to maintain this junction temperature limit in actual operation.

Does IRFBF20LPBF have a fully rated avalanche capability?

Yes, the IRFBF20LPBF is fully avalanche rated with 180 mJ single-pulse avalanche energy (EAS) and 5.4 mJ repetitive avalanche energy (EAR). These values are measured under standardized unclamped inductive test conditions (VDD = 50 V, L = 117 mH, IAS = 1.7 A) and guarantee safe operation during transient overcurrent events without parameter degradation or failure.

What is the gate-source threshold voltage range for IRFBF20LPBF?

The gate-source threshold voltage (VGS(th)) for IRFBF20LPBF is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against false triggering in electrically noisy industrial environments.

Can IRFBF20LPBF be used in surface-mount designs?

No, IRFBF20LPBF is specifically the low-profile through-hole variant (I2PAK/TO-262). For surface-mount applications, Vishay offers the IRFBF20SPbF and SiHFBF20S-GE3 in D2PAK (TO-263) package. Substituting IRFBF20LPBF into SMT layouts would require mechanical redesign due to its through-hole lead configuration and different thermal pad layout.

What is the body diode reverse recovery time for IRFBF20LPBF?

The body diode reverse recovery time (trr) for IRFBF20LPBF is 350–530 ns, measured at TJ = 25 °C, IF = 1.7 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in hard-switched topologies, and its specified range reflects process variation across production lots.

IRFBF20LPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 54W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

IRFBF20LPBF FAQ

1.How can I place an order for IRFBF20LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF20LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF20LPBF reliable?

The price and inventory of IRFBF20LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF20LPBF is usually 5 days.

3.What payment methods are accepted for IRFBF20LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF20LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF20LPBF?

IRFBF20LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF20LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF20LPBF?

For technical support, including IRFBF20LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF20LPBF requirements.

6.How does Aetrix verify that IRFBF20LPBF is sourced from the original manufacturer or authorized distributors?

All IRFBF20LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF20LPBF meets industry standards.

7.What is the process for return or replacement of IRFBF20LPBF?

All IRFBF20LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF20LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF20LPBF part is unused and in its original packaging.

Return procedure for IRFBF20LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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