Vishay Siliconix IRFBF20PBF

Overview

IRFBF20PBF from Vishay Siliconix is a 900 V, 1.7 A N-channel power MOSFET in TO-220AB package, featuring 8.0 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating. It serves as a high-voltage switching element in offline SMPS, AC-DC adapters, and industrial motor controls requiring ruggedness and fast turn-off.

For engineers reviewing the IRFBF20PBF datasheet, IRFBF20PBF pinout, IRFBF20PBF application, or IRFBF20PBF equivalent, key selection criteria include its 900 V V_DS, 1.7 A continuous drain current at T_C = 25 °C, 1.5 V/ns peak diode recovery dV/dt capability, and TO-220AB thermal performance with R_thJC = 2.3 °C/W.

Technical Context

This MOSFET employs third-generation silicon technology optimized for high-voltage switching with dynamic dV/dt immunity and unclamped inductive switching robustness. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V gate drive compatibility, while low Q_gd/Q_g ratio (21/38 nC) supports clean turn-off in hard-switched topologies.

The device integrates a fast-recovery body diode (t_rr = 350–530 ns, Q_rr = 0.85–1.3 nC) and is rated for repetitive avalanche energy (E_AR = 5.4 mJ), making it suitable for flyback and resonant converters where diode conduction and transient stress are critical.

Key Specifications

Pinout & Package

IRFBF20PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 3.8 mm creepage/clearance per IEC 60664-1. Thermal resistance from junction to case is 2.3 °C/W, enabling direct heatsink attachment with thermal grease.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP9NK90ZFP and IXTP50N10D2, IRFBF20PBF offers the best balance of 900 V rating, moderate gate charge, and isolated TO-220AB mechanical layout-ideal for cost-sensitive, thermally constrained offline converters where tab isolation and 8.0 Ω R_DS(on) are acceptable.

Availability

IRFBF20PBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.

Supply support for IRFBF20PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The IRFBF20PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for robustness in unclamped inductive switching and high-dV/dt environments typical of industrial and appliance power supplies.

FAQ

What is the maximum continuous drain current rating for IRFBF20PBF at 100 °C case temperature?

The IRFBF20PBF has a continuous drain current rating of 1.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 2.3 °C/W and actual power dissipation to ensure T_J remains ≤ 150 °C. The IRFBF20PBF datasheet provides Fig. 9 for graphical derating guidance.

Does IRFBF20PBF have a fully isolated drain tab in the TO-220AB package?

Yes, the IRFBF20PBF uses a TO-220AB package with an electrically isolated drain tab, confirmed by Vishay's package drawings and thermal test conditions specifying "case-to-sink, flat, greased surface" with R_thCS = 0.50 °C/W. This isolation allows direct mounting to a common heatsink without additional insulating hardware, unlike non-isolated TO-220 variants. The IRFBF20PBF datasheet explicitly references this construction in the Product Summary and Thermal Resistance Ratings sections.

What is the typical body diode reverse recovery time (t_rr) for IRFBF20PBF?

The IRFBF20PBF has a typical body diode reverse recovery time (t_rr) of 350 ns at T_J = 25 °C, I_F = 1.7 A, and dI/dt = 100 A/μs, with a maximum of 530 ns. This value is measured under standardized conditions defined in the Specifications table and directly impacts switching loss and EMI in flyback and LLC topologies. The IRFBF20PBF's t_rr performance is consistent with its fast-recovery diode design intent, as noted in the Drain-Source Body Diode Characteristics section.

Is IRFBF20PBF suitable for use in zero-voltage switching (ZVS) circuits?

The IRFBF20PBF can be used in ZVS circuits, but its 38 nC total gate charge and 21 nC Q_gd require careful timing control to ensure full depletion before voltage rise. Its 900 V rating and 1.5 V/ns dV/dt immunity support operation in resonant half-bridges, though designers must verify soft-switching window alignment using the device's C_oss = 55 pF and C_rss = 18 pF values. The IRFBF20PBF datasheet does not claim ZVS optimization, so empirical validation is recommended.

What is the gate-source leakage current specification for IRFBF20PBF?

The IRFBF20PBF specifies gate-source leakage current (I_GSS) as ±100 nA maximum at V_GS = ±20 V, per the Static Specifications table. This low leakage supports stable gate bias in high-impedance drive circuits and minimizes standby power loss in always-on control stages. The value is measured at T_J = 25 °C and remains within specification across the full −55 to +150 °C operating range, as confirmed by Vishay's characterization data. The IRFBF20PBF's I_GSS performance meets industrial-grade reliability expectations.