Vishay Siliconix IRFBF20PBF-BE3
- Part No.:
- IRFBF20PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFBF20PBF-BE3.pdf
- Description:
- MOSFET N-CH 900V 1.7A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,183
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Product details
Overview
IRFBF20PBF-BE3 from Vishay Siliconix is a 900 V, 1.7 A N-channel power MOSFET in TO-220AB package, featuring 8.0 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and repetitive avalanche rating up to 1.7 A - designed for high-voltage flyback and snubberless AC-DC converters.
For engineers reviewing the IRFBF20PBF-BE3 datasheet, IRFBF20PBF-BE3 pinout, IRFBF20PBF-BE3 application, or IRFBF20PBF-BE3 equivalent, key selection criteria include its 900 V blocking capability, low gate charge for fast switching in 50–100 kHz SMPS, rugged unclamped inductive switching performance, and RoHS-compliant/halogen-free construction per Vishay S21-0883-Rev. C.
Technical Context
This MOSFET employs third-generation planar vertical DMOS technology optimized for high-voltage, low-current switching where dV/dt immunity and avalanche robustness are critical. Its 1.5 V/ns peak diode recovery dV/dt rating and 180 mJ single-pulse avalanche energy support reliable operation in discontinuous conduction mode (DCM) flyback topologies with high leakage inductance.
The device integrates an intrinsic body diode with 350–530 ns reverse recovery time and 0.85–1.3 nC Qrr, enabling moderate-frequency hard-switched applications without external snubbers. Thermal design leverages 2.3 °C/W junction-to-case resistance and TO-220AB's low-cost, industry-standard heatsinking interface.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 900 V - supports primary-side switching in universal-input AC-DC adapters up to 265 VAC with 2× safety margin |
| RDS(on) | 8.0 Ω @ VGS = 10 V - sets conduction loss ceiling of ~23 mW at 1.7 A DC, suitable for <5 W output designs |
| Qg | 38 nC - determines gate drive power requirement (~1.14 mW at 30 kHz, 10 V swing), compatible with low-power IC drivers |
| EAS | 180 mJ - enables robust unclamped inductive switching in DCM flyback without external clamping |
| TJ Range | −55 °C to +150 °C - allows operation in sealed industrial enclosures with passive cooling only |
| dV/dt Rating | 1.5 V/ns - suppresses false turn-on during high-slew-rate voltage transients in high-noise EMI environments |
Pinout & Package
IRFBF20PBF-BE3 uses the standard TO-220AB package with isolated tab (drain-connected), offering mechanical compatibility with legacy heatsink mounts and low thermal resistance (RthJC = 2.3 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path from source to load | Electrically connected to metal tab - requires insulating washer when mounted to grounded heatsink |
| Gate | Control terminal for channel modulation | High-impedance input (Rg = 0.6–3.4 Ω); 4.7 nC Qgs enables fast turn-on with minimal driver stress |
| Source | Reference node for gate drive and current return | Low-inductance connection point (LS = 7.5 nH); critical for minimizing shoot-through risk in half-bridge configurations |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 5.4 mJ per pulse at 1.7 A - eliminates need for external avalanche protection in cost-sensitive flyback designs |
| Dynamic dV/dt rating | 1.5 V/ns immunity - prevents spurious turn-on during transformer leakage spikes in offline SMPS |
| Fast switching | 8 ns turn-on delay + 21 ns rise time - enables efficient operation at 50–100 kHz without excessive switching loss |
| Ease of paralleling | Positive temperature coefficient of RDS(on) - ensures current sharing stability when multiple devices operate in parallel |
Applications
| AC-DC Flyback Converter | LED Driver (Isolated) |
|---|---|
Use Scenario: Universal-input (85–265 VAC) offline flyback converter delivering ≤5 W to isolated secondary. IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in DCM with self-oscillating or fixed-frequency PWM control. Use Value: 900 V VDS provides 2× margin over worst-case reflected voltage; 180 mJ EAS absorbs leakage energy without snubber. | Use Scenario: Constant-voltage LED driver powering 12–24 V string in commercial signage with reinforced isolation. IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology with valley-switching controller. Use Value: Low Qg (38 nC) reduces gate drive loss; 1.5 V/ns dV/dt rating maintains reliability under transformer ringing. |
| Industrial Sensor Power Supply | Smart Meter Auxiliary Supply |
Use Scenario: Compact auxiliary supply for 4–20 mA loop-powered sensors in hazardous-area transmitters. IC Role / Device Role / Timing Role: High-voltage switch in ultra-low-power flyback delivering 3.3 V/50 mA with >5 kV isolation. Use Value: −55 °C to +150 °C TJ range supports operation inside sealed enclosures; TO-220AB enables direct PCB-mount heatsinking. | Use Scenario: Mains-connected auxiliary supply for metrology ICs and RF modules in Class 0.2 smart electricity meters. IC Role / Device Role / Timing Role: Primary-side switch in regulated flyback with integrated feedback via optocoupler. Use Value: Repetitive avalanche rating ensures long-term reliability under line surges; halogen-free (BE3) variant meets IEC 61000-4-5 compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK90ZFP | 900 V, 8.5 Ω RDS(on), 45 nC Qg, SuperMESH™ Zener-protected | Higher gate charge increases driver loss; built-in Zener offers enhanced gate protection | Prefer when gate overvoltage risk exceeds 20 V transient exposure |
| IXTH1N90P | 900 V, 10 Ω RDS(on), 25 nC Qg, Ultra-junction design | Lower Qg improves efficiency above 100 kHz; higher RDS(on) raises conduction loss at full load | Prefer for higher-frequency (>120 kHz), lower-power (<3 W) designs where switching loss dominates |
Compared with STP9NK90ZFP and IXTH1N90P, IRFBF20PBF-BE3 delivers the lowest RDS(on) among 900 V TO-220 devices in its class, making it optimal for thermally constrained 5 W flyback supplies where conduction loss must be minimized without increasing gate drive complexity.
Availability
IRFBF20PBF-BE3 is available at Aetrix Electronics and suitable for AC-DC flyback converters, isolated LED drivers, and industrial auxiliary power supplies requiring stable component supply and long-lifecycle availability.
Supply support for IRFBF20PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFBF20PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-sensitive, space-constrained offline SMPS in consumer, industrial, and metering applications.
FAQ
What is the maximum continuous drain current rating for IRFBF20PBF-BE3 at 100 °C case temperature?
The IRFBF20PBF-BE3 has a maximum continuous drain current (ID) of 1.1 A at TC = 100 °C, derated linearly from 1.7 A at 25 °C using the 0.43 W/°C derating factor. This reflects thermal limitations of the TO-220AB package under sustained conduction, not device failure - actual usable current depends on heatsink design and ambient conditions. The IRFBF20PBF-BE3 datasheet specifies this limit in Absolute Maximum Ratings Table 1.
Does IRFBF20PBF-BE3 have a built-in gate protection diode?
No, the IRFBF20PBF-BE3 does not integrate a gate-source Zener diode. Its gate-source voltage rating is ±20 V, and external gate protection (e.g., 15 V Zener clamp) is recommended if transient gate drive exceeds this limit. Unlike some competing 900 V MOSFETs such as STP9NK90ZFP, the IRFBF20PBF-BE3 relies on external circuitry for overvoltage gate protection - confirmed in Vishay S21-0883-Rev. C Section "Absolute Maximum Ratings".
Can IRFBF20PBF-BE3 be used in avalanche mode for energy recycling?
The IRFBF20PBF-BE3 is rated for repetitive avalanche with IAR = 1.7 A and EAR = 5.4 mJ per pulse, but it is not designed for continuous or high-duty-cycle avalanche operation. Energy recycling applications require precise control of pulse width and junction temperature - the IRFBF20PBF-BE3's avalanche capability is intended for fault tolerance, not functional energy transfer. Refer to Figure 12c in the IRFBF20PBF-BE3 datasheet for safe operating limits.
What is the body diode forward voltage of IRFBF20PBF-BE3 at 1.7 A and 25 °C?
The body diode forward voltage (VSD) of the IRFBF20PBF-BE3 is specified as 1.5 V maximum at TJ = 25 °C, IS = 1.7 A, and VGS = 0 V. This value impacts conduction loss during synchronous rectification or freewheeling phases. At elevated temperatures, VSD decreases slightly due to negative temperature coefficient - measured data in Figure 7 of the IRFBF20PBF-BE3 datasheet confirms this behavior.
Is IRFBF20PBF-BE3 suitable for use in a 100 kHz quasi-resonant flyback converter?
Yes, the IRFBF20PBF-BE3 is suitable for 100 kHz quasi-resonant flyback converters due to its 8 ns turn-on delay, 21 ns rise time, and 38 nC total gate charge - enabling low switching loss at that frequency. However, its 8.0 Ω RDS(on) makes it best suited for ≤5 W outputs where conduction loss remains manageable. For higher power, consider lower-RDS(on) alternatives. The IRFBF20PBF-BE3's dV/dt immunity (1.5 V/ns) also supports stable QR operation under transformer ringing.
IRFBF20PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 54W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFBF20PBF-BE3 FAQ
1.How can I place an order for IRFBF20PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFBF20PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFBF20PBF-BE3 reliable?
The price and inventory of IRFBF20PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF20PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFBF20PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF20PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFBF20PBF-BE3?
IRFBF20PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFBF20PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFBF20PBF-BE3?
For technical support, including IRFBF20PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF20PBF-BE3 requirements.
6.How does Aetrix verify that IRFBF20PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFBF20PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF20PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFBF20PBF-BE3?
All IRFBF20PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF20PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFBF20PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFBF20PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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