Vishay Siliconix IRFBF20SPBF
- Part No.:
- IRFBF20SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFBF20SPBF.pdf
- Description:
- MOSFET N-CH 900V 1.7A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:581
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Product details
Overview
IRFBF20SPBF from Vishay Siliconix is a 900 V, 1.7 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 8.0 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and full avalanche rating-designed for high-voltage flyback and snubberless AC-DC converters operating up to 150 °C junction temperature.
For engineers reviewing the IRFBF20SPBF datasheet, IRFBF20SPBF pinout, IRFBF20SPBF application, or IRFBF20SPBF equivalent, key selection criteria include its 900 V blocking capability, low-profile D2PAK thermal performance (RthJC = 2.3 °C/W), dynamic dV/dt rating of 1.5 V/ns, and rugged unclamped inductive switching capability (EAS = 180 mJ).
Technical Context
This third-generation high-voltage MOSFET employs planar stripe cell structure optimized for fast switching and avalanche robustness. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining low IDSS (<100 μA at 900 V).
The device integrates a co-packaged body diode with trr = 350–530 ns and Qrr = 0.85–1.3 μC, enabling efficient hard-switched topologies. Thermal design leverages the D2PAK's copper tab for direct heatsinking, supporting 54 W continuous dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 900 V - Supports primary-side switching in universal-input offline SMPS up to 380 V DC bus with 2× safety margin. |
| RDS(on) | 8.0 Ω @ VGS = 10 V - Enables <1.7 W conduction loss at 1.7 A DC, suitable for low-power high-voltage auxiliary supplies. |
| Qg | 38 nC - Determines gate drive power requirement; compatible with standard 1–2 W isolated gate drivers in flyback controllers. |
| EAS | 180 mJ - Withstands single-pulse inductive energy without failure, critical for snubberless operation in discontinuous conduction mode. |
| tr/tf | 21 ns / 32 ns - Enables >100 kHz switching in flyback converters while limiting switching losses and EMI generation. |
| TJ max | 150 °C - Allows operation in sealed industrial enclosures or high-ambient environments without derating below 100 °C case temperature. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed copper drain pad on underside for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Mounting requires 10 N·cm screw torque for heatsink interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Accepts 0–10 V logic-level signal; 4.7 nC Qgs enables fast turn-on with minimal driver stress. |
| D | High-voltage drain node | Connected to internal die backside; electrically and thermally tied to exposed copper tab-must be isolated from PCB ground plane. |
| S | Source return path | Common reference for gate drive and current sensing; low-inductance layout required to maintain dV/dt immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Surface-mount D2PAK package | Enables automated assembly and higher power density than through-hole alternatives like I2PAK (TO-262). |
| Dynamic dV/dt rating | 1.5 V/ns immunity prevents false turn-on during high-slew-rate transients in high-frequency flyback designs. |
| Full avalanche rating | Guarantees single-pulse survivability up to 180 mJ-eliminates need for external snubbers in cost-sensitive AC-DC adapters. |
| 150 °C maximum junction temperature | Supports compact thermal design in space-constrained applications such as LED drivers and industrial power supplies. |
| Low-profile construction | Height ≤ 4.83 mm allows use in ultra-thin power modules where I2PAK height (14.10 mm) is prohibitive. |
Applications
| AC-DC Flyback Converter | Snubberless Off-line Adapter |
|---|---|
|
Use Scenario: Universal-input (85–265 VAC) 12 W adapter powering IoT sensors in sealed enclosures. IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in discontinuous conduction mode at 65 kHz. Use Value: 900 V VDS and 180 mJ EAS enable elimination of RC snubber, reducing BOM count and board area by 12%. |
Use Scenario: Compact wall-plug charger for medical handheld devices requiring low standby power and no audible noise. IC Role / Device Role / Timing Role: High-side switch in quasi-resonant flyback with valley-switching control. Use Value: 1.5 V/ns dV/dt rating prevents spurious turn-on during zero-crossing detection, improving light-load efficiency by 0.8%. |
| Industrial Auxiliary Power Supply | High-Voltage DC-DC Isolator |
|
Use Scenario: 24 V/100 mA auxiliary supply derived from 400 V DC bus in PLC backplane. IC Role / Device Role / Timing Role: Primary-side switch in forward-derived topology with synchronous rectification on secondary. Use Value: 150 °C TJ rating permits operation at 75 °C ambient without forced air, simplifying thermal management. |
Use Scenario: Galvanically isolated 15 V output for gate driving SiC MOSFETs in motor drives. IC Role / Device Role / Timing Role: Isolated DC-DC converter primary switch operating at 100 kHz with tight duty cycle control. Use Value: 38 nC Qg and 21 ns rise time allow precise PWM timing with minimal gate drive overhead, reducing jitter to <2 ns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK90ZFP | 900 V, 8.5 Ω RDS(on), 42 nC Qg, TO-220FP package | Through-hole mounting; higher RthJA (62 °C/W vs. 40 °C/W) limits power density in SMT designs. | Preferred when legacy through-hole assembly is required and board space allows larger footprint. |
| IXTP50N10P | 1000 V, 0.22 Ω RDS(on), 120 nC Qg, TO-220 package | Lower RDS(on) but 3.2× higher gate charge increases driver complexity and switching loss at >50 kHz. | Selected only for high-current (>5 A), lower-frequency (<30 kHz) applications where conduction loss dominates. |
Compared with STP9NK90ZFP and IXTP50N10P, IRFBF20SPBF offers optimal balance of voltage rating, gate drive simplicity, and surface-mount thermal performance for sub-2 A, >65 kHz flyback converters-making it the preferred choice where automated assembly and compact heatsinking are critical.
Availability
IRFBF20SPBF is available at Aetrix Electronics and suitable for AC-DC flyback converters, snubberless off-line adapters, and industrial auxiliary power supplies requiring stable component supply and long-term lifecycle support.
Supply support for IRFBF20SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFBF20SPBF belongs to Vishay's high-voltage power MOSFET family engineered for ruggedized switching in cost-sensitive, space-constrained offline power conversion systems.
FAQ
What is the maximum continuous drain current for IRFBF20SPBF at 100 °C case temperature?
The IRFBF20SPBF supports 1.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under real-world heatsink conditions and must be verified against actual board layout and airflow. The IRFBF20SPBF maintains full 900 V VDS rating across this range.
Does IRFBF20SPBF have a fully rated avalanche capability, and what is the test condition?
Yes, IRFBF20SPBF is fully avalanche rated with single-pulse EAS = 180 mJ tested per JEDEC JESD24-11 at VDD = 50 V, starting TJ = 25 °C, L = 117 mH, Rg = 25 Ω, and IAS = 1.7 A. This rating applies directly to the IRFBF20SPBF and is validated in the official Vishay datasheet S20-0238-Rev. C.
What is the gate-source threshold voltage range for IRFBF20SPBF, and how does it affect drive requirements?
The IRFBF20SPBF has a VGS(th) range of 2.0–4.0 V at ID = 250 μA, confirming compatibility with standard 10 V gate drivers. This threshold ensures robust turn-on margin while avoiding unintended conduction from noise-critical for high-dV/dt environments. The IRFBF20SPBF achieves full enhancement well within typical controller output ranges.
Can IRFBF20SPBF be used in place of IRFBF20L, and what are the mechanical differences?
No-IRFBF20SPBF uses the surface-mount D2PAK (TO-263) package, while IRFBF20L uses the through-hole I2PAK (TO-262) package. They share identical electrical specifications but differ in mounting method, thermal path, and board layout. The IRFBF20SPBF requires solder-reflow assembly and exposes the drain pad on the bottom for heatsinking; IRFBF20L uses vertical lead insertion and screw-down heatsinking.
What is the body diode reverse recovery charge (Qrr) of IRFBF20SPBF, and why does it matter in flyback designs?
The IRFBF20SPBF has Qrr = 0.85–1.3 μC at TJ = 25 °C, IF = 1.7 A, and dI/dt = 100 A/μs. In flyback converters, low Qrr reduces switching loss and EMI during diode commutation, directly improving efficiency and enabling higher frequency operation. This value is measured and guaranteed for the IRFBF20SPBF per datasheet Figure 7.
IRFBF20SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 54W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRFBF20SPBF FAQ
1.How can I place an order for IRFBF20SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFBF20SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFBF20SPBF reliable?
The price and inventory of IRFBF20SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF20SPBF is usually 5 days.
3.What payment methods are accepted for IRFBF20SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF20SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFBF20SPBF?
IRFBF20SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFBF20SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFBF20SPBF?
For technical support, including IRFBF20SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF20SPBF requirements.
6.How does Aetrix verify that IRFBF20SPBF is sourced from the original manufacturer or authorized distributors?
All IRFBF20SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF20SPBF meets industry standards.
7.What is the process for return or replacement of IRFBF20SPBF?
All IRFBF20SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF20SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFBF20SPBF part is unused and in its original packaging.
Return procedure for IRFBF20SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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