Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBF20STRLPBF

Name: IRFBF20STRLPBF
Brand: Vishay Siliconix
SKU: IRFBF20STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFBF20STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFBF20STRLPBF.pdf

Description:: MOSFET N-CH 900V 1.7A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,366

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFBF20STRLPBF from Vishay Siliconix is a 900 V, 8.0 Ω (V_GS = 10 V) N-channel surface-mount power MOSFET in D2PAK (TO-263) package, rated for 1.7 A continuous drain current at T_C = 25 °C and fully avalanche-rated to 180 mJ single-pulse energy - designed for high-voltage flyback and snubberless AC-DC power supplies.

For engineers reviewing the IRFBF20STRLPBF datasheet, IRFBF20STRLPBF pinout, IRFBF20STRLPBF application, or IRFBF20STRLPBF equivalent, key selection criteria include its 900 V V_DS, 38 nC total gate charge, 150 °C maximum junction temperature, dynamic dV/dt rating of 1.5 V/ns, and D2PAK thermal performance with R_thJC = 2.3 °C/W.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for fast switching and ruggedness in offline SMPS. Its design integrates a low-profile D2PAK thermally enhanced package with a die engineered for high-voltage blocking (900 V), low R_DS(on), and robust unclamped inductive switching capability.

The IRFBF20STRLPBF features a gate threshold voltage range of 2.0–4.0 V, exhibits 1.5 V body diode forward drop at 1.7 A, and delivers 350–530 ns reverse recovery time under standardized test conditions (T_J = 25 °C, I_F = 1.7 A, dI/dt = 100 A/μs), supporting reliable operation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in universal-input AC-DC converters up to 380 VAC line with margin.
R_DS(on) @ V_GS = 10 V	8.0 Ω - defines conduction loss in high-voltage, low-current stages such as auxiliary supplies or PFC hold-up circuits.
Q_g max	38 nC - determines gate drive power requirement and influences switching speed in 50–100 kHz flyback designs.
I_D continuous @ T_C = 25 °C	1.7 A - sets maximum steady-state current handling in thermally managed PCB layouts with copper pour.
E_AS single-pulse	180 mJ - enables reliable operation under unclamped inductive load transients without external snubbers.
dV/dt rating	1.5 V/ns - ensures immunity to parasitic turn-on during high-slew-rate voltage transitions in high-noise environments.
T_J operating range	–55 to +150 °C - supports deployment in industrial and outdoor power adapters where ambient exceeds 85 °C.

Pinout & Package

IRFBF20STRLPBF uses the D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection. The package measures 10.67 mm × 9.65 mm × 4.83 mm (max) and features a single-row 3-lead configuration optimized for high-power density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (G)	Gate	Control terminal requiring ≤ ±20 V drive; 4.7 nC gate-source charge dictates Miller-effect sensitivity.
Lead 2 (D)	Drain	High-voltage output node; electrically and thermally connected to large copper pad on PCB backside.
Lead 3 (S)	Source	Power ground reference; ties to source of driver IC and provides return path for body diode conduction.

Key Features

Feature	Design Value
Surface-mount D2PAK package	Enables automated assembly and achieves 54 W power dissipation at T_C = 25 °C with R_thJC = 2.3 °C/W.
Fully avalanche-rated	Guarantees survivability under repetitive unclamped inductive switching events up to 5.4 mJ per pulse.
Dynamic dV/dt immunity	1.5 V/ns rating prevents false turn-on during rapid drain voltage transitions in discontinuous conduction mode.
150 °C maximum junction temperature	Supports extended lifetime in sealed enclosures or high-ambient industrial power supplies without derating.
Low-profile construction	4.83 mm height allows integration into space-constrained adapters and DIN-rail mounted power modules.

Applications

AC-DC Flyback Converter	Snubberless Off-line SMPS
Use Scenario: Primary-side switch in 5–15 W universal-input (85–265 VAC) flyback power supplies for IoT gateways and smart meters. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding; operates at 65–100 kHz. Use Value: 900 V V_DS and 180 mJ E_AS eliminate need for RC snubbers, reducing BOM count and improving efficiency by >1.2% at full load.	Use Scenario: Main switch in compact, cost-sensitive AC-DC adapters for consumer electronics with no external snubber network. IC Role / Device Role / Timing Role: Power transistor handling full mains-referenced switching; driven by integrated PWM controller with bootstrap gate drive. Use Value: 1.5 V/ns dV/dt rating and 350 ns body diode t_rr suppress false triggering and reduce switching losses during boundary conduction mode.
Industrial Auxiliary Supply	High-Voltage Hold-up Circuit
Use Scenario: Isolated auxiliary supply powering control circuitry in motor drives and PLCs operating from 3-phase 400 VAC input. IC Role / Device Role / Timing Role: Primary-side switch in regulated flyback delivering isolated 15 V/100 mA bias rail; thermally coupled to heatsink. Use Value: R_thJC = 2.3 °C/W and 150 °C T_J rating allow stable operation at 75 °C ambient without forced air cooling.	Use Scenario: High-voltage hold-up switch maintaining DC bus during brief AC interruptions in UPS and battery backup systems. IC Role / Device Role / Timing Role: Low-duty-cycle, high-V_DS switch activated only during brownout events; biased in linear region for controlled discharge. Use Value: 900 V breakdown and 500 μA I_DSS at 720 V/125 °C ensure minimal leakage and long-term reliability under sustained overvoltage stress.

AC-DC Flyback Converter

Snubberless Off-line SMPS

Use Scenario: Primary-side switch in 5–15 W universal-input (85–265 VAC) flyback power supplies for IoT gateways and smart meters.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding; operates at 65–100 kHz.

Use Value: 900 V V_DS and 180 mJ E_AS eliminate need for RC snubbers, reducing BOM count and improving efficiency by >1.2% at full load.

Use Scenario: Main switch in compact, cost-sensitive AC-DC adapters for consumer electronics with no external snubber network.

IC Role / Device Role / Timing Role: Power transistor handling full mains-referenced switching; driven by integrated PWM controller with bootstrap gate drive.

Use Value: 1.5 V/ns dV/dt rating and 350 ns body diode t_rr suppress false triggering and reduce switching losses during boundary conduction mode.

Industrial Auxiliary Supply

High-Voltage Hold-up Circuit

Use Scenario: Isolated auxiliary supply powering control circuitry in motor drives and PLCs operating from 3-phase 400 VAC input.

IC Role / Device Role / Timing Role: Primary-side switch in regulated flyback delivering isolated 15 V/100 mA bias rail; thermally coupled to heatsink.

Use Value: R_thJC = 2.3 °C/W and 150 °C T_J rating allow stable operation at 75 °C ambient without forced air cooling.

Use Scenario: High-voltage hold-up switch maintaining DC bus during brief AC interruptions in UPS and battery backup systems.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-V_DS switch activated only during brownout events; biased in linear region for controlled discharge.

Use Value: 900 V breakdown and 500 μA I_DSS at 720 V/125 °C ensure minimal leakage and long-term reliability under sustained overvoltage stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFBF20STRL-GE3	Same silicon die, identical R_DS(on), Q_g, and avalanche ratings; RoHS-compliant, halogen-free packaging.	No functional difference; preferred for EU/Asia markets requiring lead-free and halogen-free compliance.	Select SiHFBF20STRL-GE3 when regulatory compliance (IEC 61249-2-21, JEDEC J-STD-020) is mandatory.
IRFBC40APBF	Lower V_DS (600 V), higher R_DS(on) (1.2 Ω), larger Q_g (65 nC); TO-220 package with higher R_thJC (1.7 °C/W but requires heatsink).	Suitable only for 230 VAC-only designs; not recommended for universal-input or high-temperature deployments.	Choose IRFBC40APBF only if board space permits TO-220 mounting and system V_IN never exceeds 300 VDC.

Compared with SiHFBF20STRL-GE3, IRFBF20STRLPBF offers identical electrical performance but differs in Pb-based termination; versus IRFBC40APBF, it provides 50% higher voltage rating and 30% lower gate charge, enabling smaller gate drivers and improved efficiency in universal-input flybacks.

Availability

IRFBF20STRLPBF is available at Aetrix Electronics and suitable for AC-DC flyback converters, snubberless off-line SMPS, and industrial auxiliary supplies requiring stable component supply across production lifecycles.

Supply support for IRFBF20STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.

The IRFBF20STRLPBF belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for offline switch-mode power conversion where high breakdown voltage, low gate charge, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current for IRFBF20STRLPBF at 100 °C case temperature?

The IRFBF20STRLPBF supports 1.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations and must be validated against actual PCB layout, copper area, and airflow conditions. Designers should use the linear derating factor of 0.43 W/°C beyond 25 °C to calculate safe operating current at elevated temperatures. The IRFBF20STRLPBF datasheet confirms this value under standard test conditions with 1" square FR-4 mounting.

Does IRFBF20STRLPBF have a built-in body diode, and what are its key parameters?

Yes, IRFBF20STRLPBF integrates a monolithic body diode with V_SD = 1.5 V at I_S = 1.7 A and T_J = 25 °C, reverse recovery time t_rr = 350–530 ns, and Q_rr = 0.85–1.3 μC. These values are measured under standardized conditions (I_F = 1.7 A, dI/dt = 100 A/μs). The diode enables freewheeling in flyback and resonant topologies, and its soft recovery characteristic reduces EMI generation. The IRFBF20STRLPBF body diode is not optimized for synchronous rectification but is fully rated for continuous conduction in clamp and snubber functions.

Can IRFBF20STRLPBF be used in place of IRFBF20SPbF?

Yes, IRFBF20STRLPBF is the tape-and-reel variant of IRFBF20SPbF, sharing identical electrical specifications, thermal characteristics, and D2PAK package dimensions. The "STRL" suffix denotes tape-and-reel packaging (standard for automated SMT placement), while "SPbF" indicates the same device in tube format. Both use Pb-based terminations and meet the same reliability and qualification standards. The IRFBF20STRLPBF is functionally interchangeable with IRFBF20SPbF in all designs, provided the assembly process accommodates reel-fed feeders.

What is the gate threshold voltage range for IRFBF20STRLPBF, and how does it affect drive requirements?

The IRFBF20STRLPBF has a gate threshold voltage V_GS(th) range of 2.0–4.0 V at I_D = 250 μA, indicating it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. This threshold ensures noise immunity in high-voltage environments but mandates a dedicated gate driver capable of sourcing/sinking sufficient current to charge 38 nC total gate charge within required switching times. The IRFBF20STRLPBF is not logic-level compatible and must not be driven directly from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

Is IRFBF20STRLPBF suitable for avalanche energy testing per JEDEC JESD24-1?

Yes, IRFBF20STRLPBF is fully avalanche-rated per JEDEC JESD24-1, with documented single-pulse avalanche energy E_AS = 180 mJ and repetitive avalanche energy E_AR = 5.4 mJ. These values were verified using the unclamped inductive test circuit (Fig. 12a) with I_AS = 1.7 A, L = 117 mH, and R_g = 25 Ω. The IRFBF20STRLPBF datasheet explicitly states "fully avalanche rated", confirming compliance with industry-standard ruggedness requirements for high-reliability offline power designs.

IRFBF20STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFBF20STRLPBF FAQ

1.How can I place an order for IRFBF20STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF20STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF20STRLPBF reliable?

The price and inventory of IRFBF20STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF20STRLPBF is usually 5 days.

3.What payment methods are accepted for IRFBF20STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF20STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF20STRLPBF?

IRFBF20STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF20STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF20STRLPBF?

For technical support, including IRFBF20STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF20STRLPBF requirements.

6.How does Aetrix verify that IRFBF20STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFBF20STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF20STRLPBF meets industry standards.

7.What is the process for return or replacement of IRFBF20STRLPBF?

All IRFBF20STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF20STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF20STRLPBF part is unused and in its original packaging.

Return procedure for IRFBF20STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …