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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBF30

Name: IRFBF30
Brand: Vishay Siliconix
SKU: IRFBF30
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBF30

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBF30.pdf

Description:: MOSFET N-CH 900V 3.6A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFBF30 from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating up to 3.6 A - designed for high-voltage flyback, AC-DC adapters, and offline SMPS primary-side switching.

For engineers reviewing the IRFBF30 datasheet, IRFBF30 pinout, IRFBF30 application, or IRFBF30 equivalent, key selection criteria include its 900 V blocking capability, 1.0 °C/W junction-to-case thermal resistance, dV/dt immunity of 1.5 V/ns, and suitability for unclamped inductive switching with 250 mJ single-pulse avalanche energy.

Technical Context

This third-generation silicon-based power MOSFET employs planar V-groove technology optimized for ruggedness and fast switching in high-voltage hard-switched topologies. Its dynamic dV/dt rating and specified peak diode recovery dV/dt (1.5 V/ns) support reliable operation under high dv/dt stress in transformer-coupled circuits.

The device integrates a robust body diode with trr = 430–650 ns and Qrr = 1.4–2.1 μC at TJ = 25 °C, enabling controlled turn-off in discontinuous conduction mode (DCM) flyback converters. Gate drive simplicity is ensured by low input capacitance (Ciss = 1200 pF) and moderate gate threshold (VGS(th) = 2.0–4.0 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in universal-input (85–265 V_AC) offline converters up to 400 V_DC bus.
R_DS(on)	3.7 Ω @ V_GS = 10 V - determines conduction loss in high-voltage, low-current SMPS stages (e.g., <4 W output).
Q_g	78 nC - defines gate drive power requirement and switching speed trade-off in 50–100 kHz flyback designs.
E_AS	250 mJ - enables safe operation during unclamped inductive switching events without external snubbers.
T_J Range	−55 to +150 °C - ensures reliability in enclosed industrial power supplies with limited airflow.
R_thJC	1.0 °C/W - allows direct heatsink mounting for thermal management in ≤125 W dissipation applications.

Pinout & Package

IRFBF30 is housed in a through-hole TO-220AB package with standard three-terminal layout: Drain (D), Gate (G), Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level drive; 10 nC gate-source charge enables fast turn-on with minimal Miller effect.
D	Drain current path / Heat sink interface	High-side switch node; metal tab is Drain-connected - requires isolation washer when mounted to grounded heatsink.
S	Source reference / Return path	Common return for gate drive and load current; internal source inductance (L_S = 7.5 nH) affects diode reverse recovery behavior.

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for 3.6 A I_AR and 13 mJ E_AR, enabling robustness against transient overloads without derating.
Dynamic dV/dt immunity	1.5 V/ns - prevents false turn-on during high-speed voltage transients in transformer-isolated topologies.
Fast switching with low Q_gd/Q_g	Q_gd = 42 nC (54% of Q_g) - balances Miller plateau duration and switching loss in hard-switched applications.
Body diode with controlled Q_rr	Q_rr = 1.4–2.1 μC - reduces switching loss and EMI in DCM flyback during diode commutation.

Applications

AC-DC Adapter Primary Switch	Flyback Converter High-Voltage Switch
Use Scenario: 12 V/2 A universal-input offline adapter operating at 65 kHz with DCM control. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V_DC bus and delivering regulated output via transformer coupling. Use Value: 900 V V_DS margin accommodates line surges and leakage spikes; 250 mJ E_AS eliminates need for clamping circuitry.	Use Scenario: Isolated medical-grade power supply with reinforced insulation and no optocoupler feedback. IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback topology, driven directly by UC384X controller. Use Value: 1.5 V/ns dV/dt rating prevents spurious turn-on during transformer reset; low C_oss (320 pF) minimizes capacitive losses at light load.
Industrial HV DC-DC Converter	LED Driver Bulk Switch
Use Scenario: 24 V input, 350 V output boost converter for factory automation sensors. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost stage. Use Value: Repetitive avalanche rating (I_AR = 3.6 A) sustains operation during short-circuit fault conditions without latch-up.	Use Scenario: Constant-current LED driver for street lighting with 300 V_DC bus and 100 W output. IC Role / Device Role / Timing Role: Primary switch in buck-boost topology managing high-voltage LED string regulation. Use Value: TO-220AB package provides mechanical stability and thermal mass for intermittent surge handling; R_thJC = 1.0 °C/W enables passive heatsinking.

AC-DC Adapter Primary Switch

Flyback Converter High-Voltage Switch

Use Scenario: 12 V/2 A universal-input offline adapter operating at 65 kHz with DCM control.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V_DC bus and delivering regulated output via transformer coupling.

Use Value: 900 V V_DS margin accommodates line surges and leakage spikes; 250 mJ E_AS eliminates need for clamping circuitry.

Use Scenario: Isolated medical-grade power supply with reinforced insulation and no optocoupler feedback.

IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback topology, driven directly by UC384X controller.

Use Value: 1.5 V/ns dV/dt rating prevents spurious turn-on during transformer reset; low C_oss (320 pF) minimizes capacitive losses at light load.

Industrial HV DC-DC Converter

LED Driver Bulk Switch

Use Scenario: 24 V input, 350 V output boost converter for factory automation sensors.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost stage.

Use Value: Repetitive avalanche rating (I_AR = 3.6 A) sustains operation during short-circuit fault conditions without latch-up.

Use Scenario: Constant-current LED driver for street lighting with 300 V_DC bus and 100 W output.

IC Role / Device Role / Timing Role: Primary switch in buck-boost topology managing high-voltage LED string regulation.

Use Value: TO-220AB package provides mechanical stability and thermal mass for intermittent surge handling; R_thJC = 1.0 °C/W enables passive heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900 V, 8.3 A, R_DS(on) = 1.4 Ω, Q_g = 65 nC - lower on-resistance but higher gate charge density.	Better conduction efficiency above 2 A, but less margin for avalanche energy (E_AS = 120 mJ).	Prefer STP9NK90ZFP where average current exceeds 2.5 A and thermal headroom is available.
IXTH3N90L	900 V, 3.0 A, R_DS(on) = 4.5 Ω, Q_g = 42 nC - lower gate charge but higher on-resistance and reduced current rating.	Lower drive power needed; suitable for ultra-low-power standby circuits with strict gate drive budget.	Choose IXTH3N90L when gate drive capability is constrained and peak current stays below 2.8 A.

Compared with STP9NK90ZFP and IXTH3N90L, IRFBF30 delivers balanced trade-offs: mid-range R_DS(on) and Q_g, highest E_AS among the three, and proven ruggedness in unclamped inductive loads - making it optimal for cost-sensitive, reliability-critical offline SMPS where surge immunity matters most.

Availability

IRFBF30 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, industrial DC-DC modules, and LED drivers requiring stable component supply across long-lifecycle production programs.

Supply support for IRFBF30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFBF30 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for offline switch-mode power supplies where avalanche robustness, dV/dt immunity, and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFBF30 at 100 °C case temperature?

The IRFBF30 supports 2.3 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermally constrained environments such as sealed enclosures or high ambient temperatures. Designers should verify junction temperature using R_thJC = 1.0 °C/W and actual power dissipation to ensure TJ remains ≤150 °C. The IRFBF30 datasheet specifies this limit explicitly in Section "Absolute Maximum Ratings".

Does IRFBF30 have a RoHS-compliant version, and what is its ordering code?

Yes, IRFBF30 has a RoHS-compliant and halogen-free version identified as IRFBF30PbF-BE3 - the exact part number referenced in the ordering information section of the Vishay datasheet. This variant uses lead (Pb)-free terminations and complies with JEDEC JS709B and IPC-1752A standards. The IRFBF30PbF-BE3 is the recommended version for new designs targeting environmental compliance without sacrificing electrical or thermal performance relative to legacy Pb-containing variants.

Can IRFBF30 be used in zero-voltage switching (ZVS) topologies?

The IRFBF30 is not optimized for ZVS operation due to its relatively high C_oss (320 pF) and Q_gd-dominant gate charge profile (42 nC of 78 nC total), which increases turn-off losses in resonant circuits. While it can function in soft-switched applications, its design prioritizes hard-switched ruggedness - including 250 mJ E_AS and 1.5 V/ns dV/dt immunity - rather than low-output-capacitance resonance. For ZVS, devices like the IRFP460 or STW42NM60ND offer better C_oss/Q_g ratios. The IRFBF30 datasheet does not characterize ZVS performance.

What is the body diode forward voltage of IRFBF30 at 3.6 A and 25 °C?

The body diode forward voltage (V_SD) of IRFBF30 is specified as 1.8 V maximum at TJ = 25 °C, IS = 3.6 A, and V_GS = 0 V. This value appears in the "Drain-Source Body Diode Characteristics" table of the Vishay datasheet (Document Number 91122, page 2). It reflects conduction loss during freewheeling intervals in flyback or forward converters and impacts efficiency in discontinuous conduction mode. The IRFBF30's V_SD is typical for silicon MOSFETs in this voltage class.

Is IRFBF30 suitable for use in automotive applications?

No, IRFBF30 is not qualified for automotive applications. It lacks AEC-Q101 qualification, has no guaranteed operation above +125 °C junction temperature, and does not meet automotive-grade requirements for lifetime reliability, transient immunity, or manufacturing traceability. Vishay positions the IRFBF30 for commercial and industrial power supplies only - as stated in its product summary and disclaimer sections. For automotive use, designers should select AEC-Q101-qualified alternatives such as the SiHP4N90C or STW12NK90Z.

IRFBF30 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBF30 FAQ

1.How can I place an order for IRFBF30 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF30 reliable?

The price and inventory of IRFBF30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF30 is usually 5 days.

3.What payment methods are accepted for IRFBF30?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF30 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF30?

IRFBF30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF30 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF30?

For technical support, including IRFBF30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF30 requirements.

6.How does Aetrix verify that IRFBF30 is sourced from the original manufacturer or authorized distributors?

All IRFBF30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF30 meets industry standards.

7.What is the process for return or replacement of IRFBF30?

All IRFBF30 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF30, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF30 part is unused and in its original packaging.

Return procedure for IRFBF30:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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