Vishay Siliconix IRFBF30PBF

Overview

IRFBF30PBF from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating-designed for high-voltage flyback and snubberless AC-DC power supplies.

For engineers reviewing the IRFBF30PBF datasheet, IRFBF30PBF pinout, IRFBF30PBF application, or IRFBF30PBF equivalent, key selection criteria include its 900 V V_DS, ruggedized avalanche capability (E_AS = 250 mJ), fast switching (t_r = 25 ns), low Q_gd/Q_g ratio for hard-switching stability, and TO-220AB thermal performance (R_thJC = 1.0 °C/W).

Technical Context

This MOSFET employs third-generation planar vertical DMOS technology optimized for high-voltage, moderate-current switching in offline SMPS topologies. Its dynamic dV/dt rating (1.5 V/ns) and body diode recovery time (t_rr = 430–650 ns) support reliable operation under high dv/dt stress and inductive turn-off conditions.

The device integrates a robust intrinsic body diode with V_SD = 1.8 V at 3.6 A and is rated for repetitive avalanche (I_AR = 3.6 A, E_AR = 13 mJ), enabling unclamped inductive load handling without external protection-critical for cost-sensitive industrial power adapters and LED drivers.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.0 °C/W junction-to-case thermal resistance, and 62 °C/W max junction-to-ambient (no heatsink).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP9NK90ZFP and IXTP3N90P, the IRFBF30PBF delivers optimal balance of avalanche ruggedness, thermal resistance (1.0 °C/W), and gate drive compatibility for 3–4 A, 65–100 kHz industrial power stages-making it preferred where reliability under transient overload is prioritized over raw current rating or minimal Q_g.

Availability

IRFBF30PBF is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and snubberless relay drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFBF30PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFBF30PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for ruggedized, cost-effective switching in offline SMPS, motor controls, and solid-state power switching where avalanche tolerance and thermal robustness are critical.

FAQ

What is the maximum continuous drain current rating for IRFBF30PBF at 100 °C case temperature?

The IRFBF30PBF has a maximum continuous drain current of 2.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink sizing using R_thJC = 1.0 °C/W and system ambient conditions to maintain this rating in IRFBF30PBF-based circuits.

Does IRFBF30PBF support logic-level gate drive?

No, IRFBF30PBF is not a logic-level MOSFET. Its gate-source threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. For reliable enhancement-mode operation and low on-resistance, a minimum 10 V gate drive is required. Using 5 V logic-level drive results in significantly higher R_DS(on) and unacceptable conduction losses-confirm all IRFBF30PBF gate drive designs use ≥10 V supply.

What is the body diode reverse recovery charge (Q_rr) specification for IRFBF30PBF?

The IRFBF30PBF body diode reverse recovery charge is specified as 1.4–2.1 μC at T_J = 25 °C, I_F = 3.6 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in topologies where the body diode conducts (e.g., synchronous rectification or freewheeling). Designers should account for Q_rr in total gate charge calculations and select gate resistors that dampen associated voltage overshoot in IRFBF30PBF-based hard-switched circuits.

Is IRFBF30PBF RoHS-compliant and halogen-free?

Yes, the IRFBF30PBF-BE3 variant is both RoHS-compliant and halogen-free per JEDEC J-STD-609A Class 2a. The "BE3" suffix explicitly denotes lead-free and halogen-free construction. Standard IRFBF30PbF is RoHS-compliant but contains lead terminations and is not halogen-free. Always verify the full part number-including suffix-when ordering IRFBF30PBF to ensure compliance alignment with your end-equipment requirements.

How does the repetitive avalanche rating of IRFBF30PBF impact circuit design?

The IRFBF30PBF is rated for repetitive avalanche with I_AR = 3.6 A and E_AR = 13 mJ per pulse, enabling repeated absorption of inductive energy without degradation. This eliminates need for external clamping components in relay drivers or solenoid controls, reducing BOM cost and PCB area. However, designers must limit pulse width and duty cycle per Figure 11 and ensure junction temperature remains ≤150 °C-validating thermal design is essential before relying on IRFBF30PBF's avalanche capability in production systems.