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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBF30PBF-BE3

Name: IRFBF30PBF-BE3
Brand: Vishay Siliconix
SKU: IRFBF30PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBF30PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBF30PBF-BE3.pdf

Description:: MOSFET N-CH 900V 3.6A TO220AB

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Product details

Overview

IRFBF30PBF-BE3 from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating up to 13 mJ - designed for high-voltage flyback and snubberless AC-DC converters.

For engineers reviewing the IRFBF30PBF-BE3 datasheet, IRFBF30PBF-BE3 pinout, IRFBF30PBF-BE3 application, or IRFBF30PBF-BE3 equivalent, key selection criteria include its 900 V blocking capability, low gate charge for hard-switched SMPS, rugged unclamped inductive switching performance, and RoHS-compliant/halogen-free construction per Vishay S21-0883-Rev. C.

Technical Context

This third-generation silicon-based power MOSFET employs planar V-groove technology optimized for high-voltage operation with controlled dV/dt immunity (1.5 V/ns) and robust body diode recovery (trr = 430–650 ns). Its design supports unclamped inductive switching at 3.6 A with EAS = 250 mJ (single-pulse) and IAR = 3.6 A (repetitive).

The device operates across -55 °C to +150 °C junction temperature range, features ±20 V gate-source voltage rating, and delivers stable R_DS(on) with positive temperature coefficient - enabling safe paralleling without current-sharing resistors in high-reliability industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in 400 VAC-input offline converters with margin for surge and ringing
R_DS(on) @ V_GS = 10 V	3.7 Ω - determines conduction loss in continuous conduction mode (CCM) flyback designs at 3.6 A
Q_g	78 nC - defines gate drive power requirement and switching speed trade-off in 50–100 kHz SMPS
E_AS (single pulse)	250 mJ - enables reliable operation under transient overloads without external snubbers
T_J max	+150 °C - allows derated operation up to 125 W at T_C = 25 °C with R_thJC = 1.0 °C/W
trr / Q_rr	430–650 ns / 1.4–2.1 μC - impacts diode recovery losses and EMI in discontinuous conduction mode (DCM) topologies

Pinout & Package

IRFBF30PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 1.0 °C/W) and mechanical compatibility with standard heatsinks using M3/6-32 mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab - requires insulating washer when mounted to grounded heatsink
Gate	Control electrode for channel formation	High-impedance input requiring <100 nA leakage control; sensitive to ESD (±20 V absolute max)
Source	Reference node for gate drive and current return	Common connection point for source resistor sensing and gate driver ground reference

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 3.6 A repetitive avalanche current (I_AR) without degradation - eliminates need for external clamping in inductive load switching
Dynamic dV/dt rating	1.5 V/ns immunity - prevents false turn-on during high-slew-rate transients in high-voltage bus applications
Fast switching with low Q_g/Q_gd	78 nC Q_g and 42 nC Q_gd enable efficient 50–100 kHz operation with minimal Miller-induced delay
Low R_DS(on) temperature coefficient	Positive V_DS tempco (1.1 V/°C) ensures inherent current sharing stability when paralleled

Applications

Industrial AC-DC Power Supplies	High-Voltage DC-DC Converters
Use Scenario: 400 VAC-input, 20–60 W flyback converter for factory automation controllers. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 900 V blocking and 3.6 A peak drain current. Use Value: Repetitive avalanche rating absorbs transformer leakage energy without snubber losses, improving efficiency by ~2% over non-avalanche-rated alternatives.	Use Scenario: Isolated 48 V to 380 V boost converter in energy storage systems. IC Role / Device Role / Timing Role: High-side switch in hard-switched two-transistor forward topology operating at 65 kHz. Use Value: 3.7 Ω R_DS(on) minimizes conduction loss at 3.6 A RMS, while 78 nC Q_g maintains acceptable gate drive loss at target frequency.
Snubberless Motor Drive Stages	Capacitor-Charge Circuits
Use Scenario: Low-power BLDC gate driver auxiliary supply with inductive kickback protection. IC Role / Device Role / Timing Role: Freewheeling switch absorbing back-EMF spikes during PWM commutation. Use Value: 250 mJ single-pulse avalanche energy withstands >10⁶ cycles of 400 V inductive transients without parameter shift.	Use Scenario: High-voltage capacitor charging module for pulsed laser drivers. IC Role / Device Role / Timing Role: Controlled linear-mode switch regulating charge current into 2 kV capacitor bank. Use Value: Stable R_DS(on) vs. temperature and ±20 V V_GS rating allow precise analog current regulation up to 150 °C junction temperature.

Industrial AC-DC Power Supplies

High-Voltage DC-DC Converters

Use Scenario: 400 VAC-input, 20–60 W flyback converter for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 900 V blocking and 3.6 A peak drain current.

Use Value: Repetitive avalanche rating absorbs transformer leakage energy without snubber losses, improving efficiency by ~2% over non-avalanche-rated alternatives.

Use Scenario: Isolated 48 V to 380 V boost converter in energy storage systems.

IC Role / Device Role / Timing Role: High-side switch in hard-switched two-transistor forward topology operating at 65 kHz.

Use Value: 3.7 Ω R_DS(on) minimizes conduction loss at 3.6 A RMS, while 78 nC Q_g maintains acceptable gate drive loss at target frequency.

Snubberless Motor Drive Stages

Capacitor-Charge Circuits

Use Scenario: Low-power BLDC gate driver auxiliary supply with inductive kickback protection.

IC Role / Device Role / Timing Role: Freewheeling switch absorbing back-EMF spikes during PWM commutation.

Use Value: 250 mJ single-pulse avalanche energy withstands >10⁶ cycles of 400 V inductive transients without parameter shift.

Use Scenario: High-voltage capacitor charging module for pulsed laser drivers.

IC Role / Device Role / Timing Role: Controlled linear-mode switch regulating charge current into 2 kV capacitor bank.

Use Value: Stable R_DS(on) vs. temperature and ±20 V V_GS rating allow precise analog current regulation up to 150 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900 V, 8.5 A, R_DS(on) = 1.2 Ω, Q_g = 65 nC - lower on-resistance but higher cost and larger die size	Better suited for higher-current, lower-frequency (<30 kHz) ZVS resonant converters	Select when conduction loss dominates and gate drive loss is secondary; verify TO-220FP thermal interface compatibility
IXTH3N90L	900 V, 3.2 A, R_DS(on) = 4.2 Ω, Q_g = 48 nC - lower gate charge but higher on-resistance and no specified avalanche rating	Preferred for ultra-low EMI gate-driven circuits where avalanche robustness is managed externally	Select when minimizing switching loss is critical and system-level clamping is already implemented

Compared with STP9NK90ZFP and IXTH3N90L, IRFBF30PBF-BE3 offers balanced trade-offs: moderate R_DS(on) and gate charge with verified repetitive avalanche capability - making it optimal for cost-sensitive, reliability-critical 50–100 kHz flyback and forward converters where both conduction and switching losses must be jointly minimized.

Availability

IRFBF30PBF-BE3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage DC-DC converters, and snubberless motor drive stages requiring stable component supply and long-term lifecycle support.

Supply support for IRFBF30PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFBF30PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for demanding offline power conversion applications where avalanche robustness, dV/dt immunity, and thermal stability are mandatory.

FAQ

What is the maximum continuous drain current rating for IRFBF30PBF-BE3 at 100 °C case temperature?

The IRFBF30PBF-BE3 has a continuous drain current rating of 2.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its R_thJC = 1.0 °C/W and maximum junction temperature of +150 °C. Designers must ensure heatsink design maintains case temperature ≤100 °C to sustain this current in continuous operation.

Does IRFBF30PBF-BE3 have a fully rated avalanche capability, and what are the test conditions?

Yes, IRFBF30PBF-BE3 is repetitively avalanche rated: I_AR = 3.6 A and E_AR = 13 mJ under conditions of V_DD = 50 V, starting T_J = 25 °C, L = 36 mH, and R_g = 25 Ω. Single-pulse E_AS is 250 mJ. These ratings are validated per Figure 12 in the Vishay S21-0883-Rev. C datasheet and confirm suitability for unclamped inductive switching without external protection.

What is the body diode reverse recovery time (trr) specification for IRFBF30PBF-BE3, and how does it affect EMI?

The IRFBF30PBF-BE3 body diode exhibits t_rr = 430–650 ns at T_J = 25 °C, I_F = 3.6 A, and dI/dt = 100 A/μs. This soft recovery characteristic reduces high-frequency ringing during diode turn-off, lowering radiated EMI in DCM flyback and active clamp forward converters - a key advantage over fast-recovery but noisy diodes in noise-sensitive industrial environments.

Is IRFBF30PBF-BE3 compatible with standard TO-220 heatsinks, and what is the recommended mounting torque?

Yes, IRFBF30PBF-BE3 uses the standard TO-220AB package with a flat, isolated metal tab compatible with common TO-220 heatsinks. Vishay specifies a mounting torque of 10 lbf·in (1.1 N·m) for 6-32 or M3 screws. Proper thermal grease application and flatness control are essential to maintain R_thCS ≤ 0.50 °C/W and avoid localized hot spots above 150 °C junction temperature.

How does the gate threshold voltage (V_GS(th)) range of IRFBF30PBF-BE3 impact drive circuit design?

The IRFBF30PBF-BE3 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA. This wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process variation and temperature extremes. Driving below 8 V risks incomplete turn-on and elevated R_DS(on), increasing conduction loss - especially critical in high-temperature industrial applications where V_GS(th) drifts negatively.

IRFBF30PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBF30PBF-BE3 FAQ

1.How can I place an order for IRFBF30PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF30PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF30PBF-BE3 reliable?

The price and inventory of IRFBF30PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF30PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFBF30PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF30PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF30PBF-BE3?

IRFBF30PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF30PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF30PBF-BE3?

For technical support, including IRFBF30PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF30PBF-BE3 requirements.

6.How does Aetrix verify that IRFBF30PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFBF30PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF30PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFBF30PBF-BE3?

All IRFBF30PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF30PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF30PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFBF30PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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