Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBF30S

Name: IRFBF30S
Brand: Vishay Siliconix
SKU: IRFBF30S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFBF30S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFBF30S.pdf

Description:: MOSFET N-CH 900V 3.6A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,396

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFBF30S from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating up to 3.6 A - designed for high-voltage flyback, snubberless AC-DC converters, and industrial motor control.

For engineers reviewing the IRFBF30S datasheet, IRFBF30S pinout, IRFBF30S application, or IRFBF30S equivalent, key selection criteria include its 900 V blocking capability, dV/dt robustness (1.5 V/ns), low thermal resistance (R_thJC = 1.0 °C/W), and suitability for unclamped inductive switching in offline SMPS.

Technical Context

This third-generation high-voltage MOSFET uses planar silicon technology optimized for ruggedness and fast switching. Its dynamic dV/dt rating and repetitive avalanche capability enable reliable operation in hard-switched topologies without external clamping.

The device integrates a fast-recovery body diode (t_rr = 430–650 ns, Q_rr = 1.4–2.1 μC) and exhibits low gate input resistance (0.4–2.0 Ω), simplifying drive design. Thermal performance is enhanced by the D2PAK's low R_thJC and PCB-mount R_thJA of 40 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in universal-input AC-DC supplies up to 380 V DC bus with safety margin.
R_DS(on)	3.7 Ω @ V_GS = 10 V - determines conduction loss in continuous current mode; enables <3.6 A RMS operation at 100 °C case temperature.
Q_g	78 nC - defines gate drive energy requirement; impacts switching loss and driver sizing in 50–100 kHz SMPS designs.
E_AS	250 mJ - specifies single-pulse avalanche energy handling; allows safe operation during transient overvoltage events.
t_rr	430–650 ns - body diode recovery time affects shoot-through risk and EMI in synchronous rectification or freewheeling paths.
R_thJC	1.0 °C/W - enables 125 W power dissipation with ≤125 °C junction rise above 25 °C case; critical for thermally constrained layouts.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline per JEDEC TO-263AB standard; thermal pad soldered to PCB copper area for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring 10 V drive for full enhancement; low input capacitance (C_iss = 1200 pF) eases drive design.
D	Drain	Main high-voltage current path; electrically and thermally connected to exposed backside metal pad - must be routed to high-voltage net and thermal plane.
S	Source	Reference node for gate drive and current sensing; internal source inductance (L_S = 7.5 nH) affects switching waveform ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 3.6 A I_AR and 13 mJ E_AR under repetitive inductive fault conditions - eliminates need for external avalanche protection in motor drives.
Dynamic dV/dt rating	1.5 V/ns - prevents false turn-on during high dv/dt transients in bridge-leg or high-side configurations.
Fast switching	td(on) = 14 ns, tr = 25 ns, td(off) = 90 ns - enables high-frequency operation (>100 kHz) while maintaining efficiency in resonant and hard-switched converters.
Low R_thJC	1.0 °C/W - delivers 125 W power dissipation capability with minimal junction-to-case temperature rise, reducing heatsink requirements.

Applications

Industrial Motor Drives	AC-DC Off-line SMPS
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side/low-side switching element handling 300–400 V DC bus with PWM frequencies up to 20 kHz. Use Value: Repetitive avalanche rating ensures reliability during regenerative braking-induced voltage spikes without snubber circuits.	Use Scenario: Primary switch in 30–60 W flyback converter for LED drivers and industrial power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with 900 V V_DS rating enabling universal AC input (85–265 V_AC) compliance. Use Value: Low Q_g (78 nC) and fast switching reduce driver losses and improve light-load efficiency vs. older high-voltage MOSFETs.
Snubberless AC-DC Converters	High-Voltage DC-DC Isolated Supplies
Use Scenario: Primary-side switch in 15–25 W quasi-resonant flyback with integrated primary-side regulation. IC Role / Device Role / Timing Role: Voltage-blocking switch subjected to high dV/dt during zero-current switching transitions. Use Value: 1.5 V/ns dV/dt immunity prevents spurious turn-on, eliminating need for gate resistors >10 Ω or active clamping networks.	Use Scenario: Primary switch in isolated forward or half-bridge DC-DC converter for telecom or server auxiliary supplies (48 V input). IC Role / Device Role / Timing Role: High-voltage switching transistor handling reflected output voltage plus leakage spike in transformer-isolated topology. Use Value: 250 mJ single-pulse avalanche energy withstands worst-case transformer reset failures without device destruction.

Industrial Motor Drives

AC-DC Off-line SMPS

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 300–400 V DC bus with PWM frequencies up to 20 kHz.

Use Value: Repetitive avalanche rating ensures reliability during regenerative braking-induced voltage spikes without snubber circuits.

Use Scenario: Primary switch in 30–60 W flyback converter for LED drivers and industrial power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with 900 V V_DS rating enabling universal AC input (85–265 V_AC) compliance.

Use Value: Low Q_g (78 nC) and fast switching reduce driver losses and improve light-load efficiency vs. older high-voltage MOSFETs.

Snubberless AC-DC Converters

High-Voltage DC-DC Isolated Supplies

Use Scenario: Primary-side switch in 15–25 W quasi-resonant flyback with integrated primary-side regulation.

IC Role / Device Role / Timing Role: Voltage-blocking switch subjected to high dV/dt during zero-current switching transitions.

Use Value: 1.5 V/ns dV/dt immunity prevents spurious turn-on, eliminating need for gate resistors >10 Ω or active clamping networks.

Use Scenario: Primary switch in isolated forward or half-bridge DC-DC converter for telecom or server auxiliary supplies (48 V input).

IC Role / Device Role / Timing Role: High-voltage switching transistor handling reflected output voltage plus leakage spike in transformer-isolated topology.

Use Value: 250 mJ single-pulse avalanche energy withstands worst-case transformer reset failures without device destruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90Z	900 V, 8.5 A, R_DS(on) = 1.4 Ω, Q_g = 85 nC, TO-220 package	Higher current rating but larger R_thJA (62 °C/W); requires heatsink in same power range	Prefer when higher continuous current (≥6 A) is needed and through-hole mounting is acceptable.
IXTH3N90L	900 V, 3.0 A, R_DS(on) = 4.5 Ω, Q_g = 42 nC, TO-247 package	Lower Q_g improves switching efficiency but higher R_DS(on) increases conduction loss	Prefer when gate drive power minimization is critical and thermal management permits higher on-resistance.

Compared with STP9NK90Z and IXTH3N90L, the IRFBF30S offers the best balance of low R_thJC (1.0 °C/W), surface-mount D2PAK packaging, and proven avalanche ruggedness - making it optimal for compact, thermally constrained high-voltage SMPS where layout space and reliability under transient stress are prioritized.

Availability

IRFBF30S is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC off-line SMPS, and snubberless AC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFBF30S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFBF30S belongs to Vishay's high-voltage planar MOSFET product line, engineered for demanding offline power conversion applications where avalanche capability, dV/dt immunity, and low thermal resistance are essential.

FAQ

What is the maximum continuous drain current for IRFBF30S at 100 °C case temperature?

The IRFBF30S supports a continuous drain current of 2.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify PCB copper area and airflow to maintain T_C ≤ 100 °C under full load.

Does IRFBF30S have a built-in body diode, and what are its key parameters?

Yes, the IRFBF30S integrates a fast-recovery body diode with typical reverse recovery time t_rr of 430–650 ns and reverse recovery charge Q_rr of 1.4–2.1 μC at T_J = 25 °C. The forward voltage V_SD is 1.8 V at I_S = 3.6 A and V_GS = 0 V. These values are critical for evaluating freewheeling behavior and EMI in non-synchronous topologies.

Is IRFBF30S RoHS-compliant and halogen-free?

Yes, the IRFBF30S ordering variant IRFBF30STRRPbF is lead (Pb)-free and halogen-free, compliant with EU RoHS Directive 2011/65/EU and Vishay's material categorization standard. Full compliance details, including exemption status and test reports, are documented in Vishay's official material declaration for document number 91389.

What is the recommended gate resistor value for IRFBF30S in a 65 kHz flyback converter?

A gate resistor of 12 Ω is used in the IRFBF30S datasheet switching characterization (Fig. 10), yielding td(on) = 14 ns and td(off) = 90 ns. For 65 kHz flyback operation, 10–15 Ω balances switching speed and gate drive stability; lower values may increase EMI, while higher values raise switching losses. Layout parasitics and driver strength must be validated empirically.

Can IRFBF30S replace IRFP460 in existing designs?

No - the IRFBF30S (900 V, 3.6 A, 3.7 Ω) is not a direct replacement for IRFP460 (500 V, 20 A, 0.27 Ω). Voltage rating mismatch (900 V vs. 500 V) and current/resistance differences make substitution unsafe without circuit re-evaluation. Use only in new designs targeting ≥900 V blocking and moderate current, not as a drop-in upgrade.

IRFBF30S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFBF30S FAQ

1.How can I place an order for IRFBF30S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF30S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF30S reliable?

The price and inventory of IRFBF30S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF30S is usually 5 days.

3.What payment methods are accepted for IRFBF30S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF30S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF30S?

IRFBF30S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF30S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF30S?

For technical support, including IRFBF30S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF30S requirements.

6.How does Aetrix verify that IRFBF30S is sourced from the original manufacturer or authorized distributors?

All IRFBF30S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF30S meets industry standards.

7.What is the process for return or replacement of IRFBF30S?

All IRFBF30S units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF30S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF30S part is unused and in its original packaging.

Return procedure for IRFBF30S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …