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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBF30SPBF

Name: IRFBF30SPBF
Brand: Vishay Siliconix
SKU: IRFBF30SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBF30SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFBF30SPBF.pdf

Description:: MOSFET N-CH 900V 3.6A D2PAK

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Product details

Overview

IRFBF30SPBF from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating-designed for high-voltage flyback and snubberless AC-DC converters operating up to 150 °C junction temperature.

For engineers reviewing the IRFBF30SPBF datasheet, IRFBF30SPBF pinout, IRFBF30SPBF application, or IRFBF30SPBF equivalent, key selection criteria include unclamped inductive switching capability (250 mJ), peak diode recovery dV/dt (1.5 V/ns), body diode reverse recovery time (430–650 ns), and thermal resistance R_thJC = 1.0 °C/W for high-reliability industrial power supplies.

Technical Context

This device belongs to Vishay's third-generation high-voltage MOSFET family optimized for ruggedness and fast switching in offline SMPS topologies. Its dynamic dV/dt rating and repetitive avalanche capability enable robust operation under transient overvoltage and inductive load switching without external clamping.

The D2PAK package provides low junction-to-case thermal resistance (1.0 °C/W) and supports PCB-mount power dissipation up to 125 W at T_C = 25 °C. Gate drive is simplified by ±20 V V_GS rating and moderate Q_g (78 nC), enabling compatibility with standard 12 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in universal-input AC-DC converters up to 380 V DC bus with safety margin
R_DS(on)	3.7 Ω @ V_GS = 10 V - determines conduction loss in continuous current mode; enables <3.6 A RMS operation at 100 °C case
Q_g	78 nC - defines gate drive energy requirement; compatible with common PWM controllers driving ≤100 kHz
E_AS	250 mJ - specifies single-pulse unclamped inductive energy handling; critical for transformer reset reliability
R_thJC	1.0 °C/W - enables direct heatsink mounting for thermal management in compact 50–125 W power stages
dV/dt (diode)	1.5 V/ns - sets maximum allowable voltage slew rate during body diode commutation to prevent false turn-on
I_D (T_C = 100 °C)	2.3 A - defines usable continuous current under real-world thermal conditions in enclosed enclosures

Pinout & Package

D2PAK (TO-263) package with exposed drain tab on underside for thermal and electrical connection; 3-pin surface-mount outline per JEDEC TO-263AB standard; thermal pad soldered to PCB copper area per Vishay recommended footprint (10.67 mm × 9.02 mm).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; input capacitance C_iss = 1200 pF affects driver sizing
D (Drain)	High-side power output	Connected to transformer primary or HV rail; electrically and thermally tied to exposed metal tab
S (Source)	Power return / reference	Provides return path for load current; source inductance L_S = 7.5 nH impacts switching waveform ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports ≥3.6 A I_AR and 13 mJ E_AR under repeated inductive switching-eliminates need for external avalanche protection
Dynamic dV/dt rating	1.5 V/ns peak diode recovery dV/dt tolerance prevents spurious turn-on during high-slew commutation events
Fast switching	Turn-off delay t_d(off) = 90 ns and fall time t_f = 30 ns enable efficient operation at 50–100 kHz in quasi-resonant converters
Low R_thJC	1.0 °C/W junction-to-case thermal resistance allows direct heatsink mounting without thermal interface material in many applications
RoHS-compliant, lead-free	Meets EU RoHS Directive 2011/65/EU; halogen-free option available per SiHFBF30S-GE3 ordering code

Applications

AC-DC Flyback Converter	Snubberless Forward Converter
Use Scenario: Primary-side switch in 30–60 W universal-input offline flyback power supply for industrial control modules. IC Role / Device Role / Timing Role: High-voltage switching element controlling transformer energy transfer; operates in discontinuous conduction mode (DCM) at 65 kHz. Use Value: 900 V V_DS rating accommodates reflected output voltage + leakage spike + safety margin; 250 mJ E_AS ensures reliable reset without snubber.	Use Scenario: Main power switch in 40–80 W snubberless forward converter for telecom power shelves. IC Role / Device Role / Timing Role: Unidirectional main switch conducting during duty cycle; body diode blocks during reset phase. Use Value: 1.5 V/ns dV/dt rating prevents false triggering during rapid V_DS rise across transformer reset; 430–650 ns t_rr minimizes diode recovery loss.
High-Voltage DC-DC Isolator	Industrial LED Driver
Use Scenario: Primary-side switch in 200–400 V input isolated DC-DC converter for PLC I/O modules. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving center-tapped transformer. Use Value: Repetitive avalanche rating (3.6 A I_AR) handles mismatched transformer saturation events; R_thJC = 1.0 °C/W enables compact heatsinking.	Use Scenario: Constant-current switch in 230 V AC-input LED driver for street lighting ballasts. IC Role / Device Role / Timing Role: High-voltage buck/boost switch regulating LED string current via primary-side sensing. Use Value: 150 °C max T_J and -55 °C min T_stg support outdoor deployment; 3.7 Ω R_DS(on) balances conduction loss vs. cost in 3.6 A peak designs.

AC-DC Flyback Converter

Snubberless Forward Converter

Use Scenario: Primary-side switch in 30–60 W universal-input offline flyback power supply for industrial control modules.

IC Role / Device Role / Timing Role: High-voltage switching element controlling transformer energy transfer; operates in discontinuous conduction mode (DCM) at 65 kHz.

Use Value: 900 V V_DS rating accommodates reflected output voltage + leakage spike + safety margin; 250 mJ E_AS ensures reliable reset without snubber.

Use Scenario: Main power switch in 40–80 W snubberless forward converter for telecom power shelves.

IC Role / Device Role / Timing Role: Unidirectional main switch conducting during duty cycle; body diode blocks during reset phase.

Use Value: 1.5 V/ns dV/dt rating prevents false triggering during rapid V_DS rise across transformer reset; 430–650 ns t_rr minimizes diode recovery loss.

High-Voltage DC-DC Isolator

Industrial LED Driver

Use Scenario: Primary-side switch in 200–400 V input isolated DC-DC converter for PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving center-tapped transformer.

Use Value: Repetitive avalanche rating (3.6 A I_AR) handles mismatched transformer saturation events; R_thJC = 1.0 °C/W enables compact heatsinking.

Use Scenario: Constant-current switch in 230 V AC-input LED driver for street lighting ballasts.

IC Role / Device Role / Timing Role: High-voltage buck/boost switch regulating LED string current via primary-side sensing.

Use Value: 150 °C max T_J and -55 °C min T_stg support outdoor deployment; 3.7 Ω R_DS(on) balances conduction loss vs. cost in 3.6 A peak designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900 V, 8.5 A, R_DS(on) = 1.3 Ω, Q_g = 75 nC, TO-220FP package	Higher current rating but higher R_DS(on) at lower V_GS; requires through-hole mounting and larger heatsink	Preferred where higher peak current and through-hole assembly are acceptable
IXTH3N90L	900 V, 3.2 A, R_DS(on) = 4.2 Ω, Q_g = 42 nC, TO-247 package	Lower gate charge reduces driver loss but higher R_DS(on) increases conduction loss; larger TO-247 footprint	Selected when minimizing gate drive power dominates over conduction efficiency

Compared with STP9NK90ZFP and IXTH3N90L, IRFBF30SPBF offers optimal balance of surface-mount D2PAK packaging, 3.6 A continuous rating, and 3.7 Ω R_DS(on) for space-constrained 50–100 W industrial power supplies requiring repeatable avalanche performance.

Availability

IRFBF30SPBF is available at Aetrix Electronics and suitable for AC-DC flyback converters, snubberless forward converters, and industrial LED drivers requiring stable component supply across extended product lifecycles.

Supply support for IRFBF30SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFBF30SPBF belongs to Vishay's high-voltage power MOSFET product line engineered for industrial-grade offline power conversion-specifically targeting flyback, forward, and resonant topologies demanding avalanche robustness and stable high-temperature operation.

FAQ

What is the maximum continuous drain current for IRFBF30SPBF at 100 °C case temperature?

The IRFBF30SPBF supports 2.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value accounts for thermal limitations in enclosed environments and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify PCB copper area and heatsinking to maintain T_C ≤ 100 °C under full load.

Does IRFBF30SPBF have an integrated body diode, and what are its key parameters?

Yes, IRFBF30SPBF includes an integral reverse p-n junction body diode. Key parameters include 3.6 A continuous source-drain current (I_S), 1.8 V forward voltage (V_SD) at 3.6 A and 25 °C, and reverse recovery time (t_rr) of 430–650 ns at 25 °C with 100 A/μs dI/dt. These values are critical for evaluating commutation losses in hard-switched topologies.

What is the gate threshold voltage range for IRFBF30SPBF, and how does it affect drive design?

The gate-source threshold voltage (V_GS(th)) for IRFBF30SPBF is 2.0–4.0 V at T_J = 25 °C and I_D = 250 μA. This range confirms standard-level (not logic-level) drive requirements; full enhancement requires ≥10 V V_GS. Designers must ensure gate driver output exceeds 10 V with sufficient current to charge 78 nC Q_g within required switching times.

Can IRFBF30SPBF be used in avalanche mode, and what are the limits?

Yes, IRFBF30SPBF is repetitively avalanche rated with I_AR = 3.6 A and E_AR = 13 mJ per pulse. Single-pulse avalanche energy is rated at 250 mJ. Operation in avalanche mode must respect pulse width and duty cycle limits defined in Figure 11 and note "a" of the datasheet to avoid exceeding T_J(max) = 150 °C.

What is the thermal resistance from junction to ambient for IRFBF30SPBF in typical PCB mount?

For IRFBF30SPBF mounted on a 1" square FR-4 PCB, the maximum junction-to-ambient thermal resistance (R_thJA) is 40 °C/W. This value assumes standard PCB copper layout per Vishay's recommended pad dimensions. With direct heatsink attachment to the drain tab, R_thJC = 1.0 °C/W becomes the dominant thermal path, significantly improving power handling capability.

IRFBF30SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFBF30SPBF FAQ

1.How can I place an order for IRFBF30SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF30SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF30SPBF reliable?

The price and inventory of IRFBF30SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF30SPBF is usually 5 days.

3.What payment methods are accepted for IRFBF30SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF30SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF30SPBF?

IRFBF30SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF30SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF30SPBF?

For technical support, including IRFBF30SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF30SPBF requirements.

6.How does Aetrix verify that IRFBF30SPBF is sourced from the original manufacturer or authorized distributors?

All IRFBF30SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF30SPBF meets industry standards.

7.What is the process for return or replacement of IRFBF30SPBF?

All IRFBF30SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF30SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF30SPBF part is unused and in its original packaging.

Return procedure for IRFBF30SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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