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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBF30STRLPBF

Name: IRFBF30STRLPBF
Brand: Vishay Siliconix
SKU: IRFBF30STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBF30STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFBF30STRLPBF.pdf

Description:: MOSFET N-CH 900V 3.6A TO263

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Inventory:1,600

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Product details

Overview

IRFBF30STRLPBF from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in D2PAK (TO-263) package with 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating-designed for high-voltage flyback, snubberless AC-DC converters, and industrial motor control.

For engineers reviewing the IRFBF30STRLPBF datasheet, IRFBF30STRLPBF pinout, IRFBF30STRLPBF application, or IRFBF30STRLPBF equivalent, key selection criteria include its 900 V blocking capability, dV/dt ruggedness (1.5 V/ns), unclamped inductive switching performance (250 mJ E_AS), and PCB-mount thermal resistance of 40 °C/W.

Technical Context

This third-generation high-voltage MOSFET employs planar stripe cell structure for balanced conduction and switching losses. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V gate drive compatibility while maintaining robust noise immunity.

The device integrates an intrinsic body diode with 430–650 ns reverse recovery time and 1.4–2.1 μC Q_rr, supporting hard-switched topologies where diode commutation is critical. Dynamic dV/dt rating and repetitive avalanche capability allow operation under transient overvoltage conditions without external clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in universal-input offline SMPS up to 380 V DC bus with safety margin
R_DS(on)	3.7 Ω @ V_GS = 10 V - determines conduction loss in continuous current mode; suitable for ≤50 W power stages
Q_g	78 nC - defines gate drive power requirement and switching speed; compatible with standard MOSFET drivers (e.g., IR2110)
E_AS	250 mJ - enables reliable unclamped inductive switching in relay driving or solenoid control without snubbers
R_thJC	1.0 °C/W - allows direct heatsink mounting for thermal management in high ambient environments (e.g., industrial enclosures)
dV/dt	1.5 V/ns - ensures immunity to false turn-on during fast voltage transients in high-noise motor drive applications

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for low thermal resistance and mechanical stability on PCB. Standard 3-lead configuration: Gate (G), Drain (D), Source (S). Thermal pad soldered to copper pour for optimal heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤±20 V drive; 10 V typical for full enhancement
D	Drain	Main high-voltage terminal; electrically connected to thermal pad; must be isolated from other layers
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 3.6 A I_AR and 13 mJ E_AR without degradation-enables robust operation in inductive load switching
Dynamic dV/dt rating	1.5 V/ns immunity prevents spurious turn-on during rapid voltage transitions in high-frequency converters
Fast switching	14 ns turn-on delay + 25 ns rise time enables >100 kHz operation with minimized switching losses
Low R_thJA (PCB mount)	40 °C/W enables 125 W power dissipation with minimal heatsinking-ideal for space-constrained industrial designs
RoHS-compliant, lead-free	Meets JEDEC J-STD-020 moisture sensitivity level 1; compatible with standard reflow profiles

Applications

AC-DC Power Supplies	Industrial Motor Drives
Use Scenario: Primary-side switch in 30–50 W offline flyback converters for industrial instrumentation. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding. Use Value: 900 V V_DS accommodates reflected output voltage plus leakage spike margin; 3.7 Ω R_DS(on) limits conduction loss at 3.6 A peak current.	Use Scenario: Low-side switch in 3-phase inverter half-bridge for 100–200 W BLDC motor control. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path in motor phase leg. Use Value: Repetitive avalanche rating handles inductive kickback during PWM dead-time; 1.5 V/ns dV/dt rating suppresses shoot-through risk.
Snubberless Relay Drivers	High-Voltage DC-DC Converters
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Unclamped inductive switch managing 24–48 V DC coil loads with 100 ms+ dwell times. Use Value: 250 mJ single-pulse avalanche energy absorbs stored coil energy without external snubber components.	Use Scenario: Switching element in 400–800 V input isolated DC-DC converters for telecom or test equipment. IC Role / Device Role / Timing Role: Primary-side high-side switch in forward or active-clamp forward topology. Use Value: 900 V rating provides 2× safety margin over 400 V nominal input; 78 nC Q_g enables efficient gate drive at 200–500 kHz.

AC-DC Power Supplies

Industrial Motor Drives

Use Scenario: Primary-side switch in 30–50 W offline flyback converters for industrial instrumentation.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding.

Use Value: 900 V V_DS accommodates reflected output voltage plus leakage spike margin; 3.7 Ω R_DS(on) limits conduction loss at 3.6 A peak current.

Use Scenario: Low-side switch in 3-phase inverter half-bridge for 100–200 W BLDC motor control.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path in motor phase leg.

Use Value: Repetitive avalanche rating handles inductive kickback during PWM dead-time; 1.5 V/ns dV/dt rating suppresses shoot-through risk.

Snubberless Relay Drivers

High-Voltage DC-DC Converters

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Unclamped inductive switch managing 24–48 V DC coil loads with 100 ms+ dwell times.

Use Value: 250 mJ single-pulse avalanche energy absorbs stored coil energy without external snubber components.

Use Scenario: Switching element in 400–800 V input isolated DC-DC converters for telecom or test equipment.

IC Role / Device Role / Timing Role: Primary-side high-side switch in forward or active-clamp forward topology.

Use Value: 900 V rating provides 2× safety margin over 400 V nominal input; 78 nC Q_g enables efficient gate drive at 200–500 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW9NK90Z	900 V, 3.5 A, R_DS(on) = 3.8 Ω, Q_g = 85 nC, TO-247 package	Larger TO-247 footprint; higher R_thJC (1.2 °C/W); no specified dV/dt rating	Preferred when higher peak current handling and bolt-down heatsinking are required; not drop-in due to package mismatch
IXTH90N10L2	1000 V, 90 A, R_DS(on) = 0.11 Ω, Q_g = 220 nC, TO-247 package	Higher current/low-R_DS(on) trade-off; significantly larger gate drive demand; no avalanche energy spec	Selected for high-power (>200 W) applications needing lower conduction loss; requires stronger gate driver and layout revision

Compared with STW9NK90Z and IXTH90N10L2, the IRFBF30STRLPBF offers optimized balance of voltage rating, thermal performance in D2PAK, and dV/dt ruggedness-making it uniquely suited for compact, medium-power industrial converters where PCB area and transient immunity are critical.

Availability

IRFBF30STRLPBF is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRFBF30STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFBF30STRLPBF belongs to Vishay's high-voltage planar MOSFET product line, engineered for demanding industrial and power conversion applications where avalanche capability, dV/dt immunity, and thermal efficiency are essential.

FAQ

What is the maximum junction temperature for the IRFBF30STRLPBF?

The IRFBF30STRLPBF has an operating junction temperature range of –55 °C to +150 °C. This upper limit governs thermal design margins-when used at 125 W power dissipation, the 1.0 °C/W R_thJC requires case temperature to remain below 25 °C to avoid exceeding TJ(max). Derating curves in Figure 9 confirm 2.3 A continuous current at TC = 100 °C.

Does the IRFBF30STRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRFBF30STRLPBF integrates a monolithic body diode. Key parameters include 1.8 V forward voltage at 3.6 A and 25 °C, 430–650 ns reverse recovery time (trr), and 1.4–2.1 μC reverse recovery charge (Qrr). These values are measured under standardized conditions (IF = 3.6 A, dI/dt = 100 A/μs) and directly impact commutation losses in hard-switched topologies.

Is the IRFBF30STRLPBF suitable for use in zero-voltage switching (ZVS) circuits?

The IRFBF30STRLPBF can be used in ZVS circuits, but its 78 nC Q_g and 320 pF C_oss require careful resonant tank design to ensure full depletion before turn-on. Unlike dedicated RF or synchronous rectifier MOSFETs, it lacks optimized C_oss linearity-so ZVS efficiency depends heavily on external circuit tuning and operating frequency.

What is the gate threshold voltage range for the IRFBF30STRLPBF, and how does it affect drive design?

The IRFBF30STRLPBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at 250 μA drain current. This wide spread necessitates gate drive voltages ≥10 V to guarantee full enhancement across process variation and temperature. Drive circuits must maintain ≥10 V during switching to avoid linear-mode operation and thermal runaway.

How does the IRFBF30STRLPBF's avalanche rating compare to standard MOSFETs without this specification?

Unlike standard MOSFETs, the IRFBF30STRLPBF is explicitly tested and rated for repetitive avalanche: 3.6 A I_AR and 13 mJ E_AR. This means it can repeatedly absorb inductive energy without parameter shift-critical in relay drivers or flyback snubberless designs where voltage spikes exceed V_DS rating. Standard MOSFETs may fail catastrophically under identical stress.

IRFBF30STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFBF30STRLPBF FAQ

1.How can I place an order for IRFBF30STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF30STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF30STRLPBF reliable?

The price and inventory of IRFBF30STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF30STRLPBF is usually 5 days.

3.What payment methods are accepted for IRFBF30STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF30STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF30STRLPBF?

IRFBF30STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF30STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF30STRLPBF?

For technical support, including IRFBF30STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF30STRLPBF requirements.

6.How does Aetrix verify that IRFBF30STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFBF30STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF30STRLPBF meets industry standards.

7.What is the process for return or replacement of IRFBF30STRLPBF?

All IRFBF30STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF30STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF30STRLPBF part is unused and in its original packaging.

Return procedure for IRFBF30STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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