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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBG20

Name: IRFBG20
Brand: Vishay Siliconix
SKU: IRFBG20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBG20

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBG20.pdf

Description:: MOSFET N-CH 1000V 1.4A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFBG20 from Vishay Siliconix is a 1000 V, 1.4 A N-channel power MOSFET in TO-220AB package, featuring 11 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating up to 1.4 A - designed for high-voltage flyback and snubberless AC-DC converters.

For engineers reviewing the IRFBG20 datasheet, IRFBG20 pinout, IRFBG20 application, or IRFBG20 equivalent, key selection criteria include its 1000 V blocking capability, low 5.4 mJ repetitive avalanche energy, dV/dt immunity of 1.0 V/ns, and suitability for ruggedized offline SMPS where high-voltage transients and unclamped inductive switching occur.

Technical Context

This device implements a third-generation planar VDMOS structure optimized for high-voltage switching with dynamic dV/dt immunity and intrinsic body diode recovery (trr = 130–190 ns). Its gate threshold voltage range (2.0–4.0 V) ensures stable turn-on under wide temperature and drive conditions.

The MOSFET supports unclamped inductive switching with single-pulse avalanche energy of 200 mJ and operates reliably up to TJ = 150 °C. Thermal resistance R_thJC = 2.3 °C/W enables efficient heatsinking in compact TO-220AB layouts for <50 W dissipation applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1000 V - supports direct rectified universal AC input (up to 700 VDC) with margin for surge and ringing
R_DS(on)	11 Ω @ V_GS = 10 V - defines conduction loss in high-voltage, low-current primary-side switching
Q_g	38 nC - determines gate drive power and switching speed trade-off in 50–100 kHz flyback designs
I_D (T_C = 25 °C)	1.4 A - continuous current rating at cold heatsink; derates linearly to 0.86 A at 100 °C case
E_AS	200 mJ - enables robust operation during single-event overloads without external clamping
dV/dt	1.0 V/ns - withstands fast transient coupling in high-noise industrial or lighting environments
T_J Range	−55 to +150 °C - qualified for extended ambient operation in enclosed power supplies

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering peak: 300 °C for 10 s.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 500 pF affects driver sizing
D (Drain)	High-voltage output terminal	Connected to internal die backside; electrically tied to metal tab - requires isolation from heatsink unless grounded
S (Source)	Reference node / return path	Common connection for gate drive return and current sensing; internal source inductance L_S = 7.5 nH impacts switching waveform fidelity

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for 1.4 A I_AR and 5.4 mJ E_AR - enables reliable operation in unclamped inductive loads without external protection
Dynamic dV/dt immunity	1.0 V/ns - suppresses false turn-on during high dv/dt events in high-side or half-bridge configurations
Fast switching with low Q_gd/Q_g	Q_gd = 22 nC (58% of Q_g) - reduces Miller-induced switching delay and improves hard-switching efficiency
Low thermal resistance	R_thJC = 2.3 °C/W - allows >50 W pulsed dissipation with modest heatsinking in TO-220AB form factor

Applications

AC-DC Flyback Converter	Snubberless Ballast Driver
Use Scenario: Primary-side switch in 20–40 W universal-input offline flyback power supplies for LED drivers and adapters. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding. Use Value: 1000 V V_DS accommodates 385 VDC bulk plus 150 V ringing margin; 11 Ω R_DS(on) balances conduction loss against die size cost.	Use Scenario: Resonant half-bridge switch in electronic CFL/LED ballasts operating directly from rectified AC line. IC Role / Device Role / Timing Role: High-voltage switching transistor handling 600+ V DC link with zero-voltage switching transitions. Use Value: Repetitive avalanche rating absorbs energy from parasitic inductance during dead-time transitions without snubber networks.
Industrial HV DC-DC Converter	Capacitor Discharge Ignition (CDI)
Use Scenario: Isolated DC-DC converter stage in programmable logic controller (PLC) power modules requiring 24 V/48 V outputs from 300–400 VDC bus. IC Role / Device Role / Timing Role: Primary-side MOSFET in forward or active-clamp forward topology. Use Value: 150 °C max junction temperature and −55 °C min storage enable deployment in wide-temperature industrial enclosures.	Use Scenario: High-voltage discharge switch in motorcycle or small-engine CDI systems generating spark pulses from charged capacitor banks. IC Role / Device Role / Timing Role: Fast-turning switch releasing stored energy into ignition coil primary. Use Value: 200 mJ single-pulse avalanche energy tolerates repeated capacitor dump stress without degradation.

AC-DC Flyback Converter

Snubberless Ballast Driver

Use Scenario: Primary-side switch in 20–40 W universal-input offline flyback power supplies for LED drivers and adapters.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding.

Use Value: 1000 V V_DS accommodates 385 VDC bulk plus 150 V ringing margin; 11 Ω R_DS(on) balances conduction loss against die size cost.

Use Scenario: Resonant half-bridge switch in electronic CFL/LED ballasts operating directly from rectified AC line.

IC Role / Device Role / Timing Role: High-voltage switching transistor handling 600+ V DC link with zero-voltage switching transitions.

Use Value: Repetitive avalanche rating absorbs energy from parasitic inductance during dead-time transitions without snubber networks.

Industrial HV DC-DC Converter

Capacitor Discharge Ignition (CDI)

Use Scenario: Isolated DC-DC converter stage in programmable logic controller (PLC) power modules requiring 24 V/48 V outputs from 300–400 VDC bus.

IC Role / Device Role / Timing Role: Primary-side MOSFET in forward or active-clamp forward topology.

Use Value: 150 °C max junction temperature and −55 °C min storage enable deployment in wide-temperature industrial enclosures.

Use Scenario: High-voltage discharge switch in motorcycle or small-engine CDI systems generating spark pulses from charged capacitor banks.

IC Role / Device Role / Timing Role: Fast-turning switch releasing stored energy into ignition coil primary.

Use Value: 200 mJ single-pulse avalanche energy tolerates repeated capacitor dump stress without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK100ZFP	1000 V, 1.1 A, R_DS(on) = 14 Ω, Q_g = 29 nC, TO-220FP package (full-pack)	Lower current rating and higher on-resistance; smaller gate charge reduces drive loss	Prefer when lower gate drive power is critical and 1.1 A ID suffices
IXTP1R1N100P	1000 V, 1.1 A, R_DS(on) = 12.5 Ω, Q_g = 22 nC, TO-220 package with enhanced avalanche ruggedness	Higher dV/dt rating (1.5 V/ns), tighter V_GS(th) distribution, but lower I_D	Prefer for ultra-rugged transient environments where gate drive simplicity outweighs current headroom

Compared with STP1NK100ZFP and IXTP1R1N100P, the IRFBG20 offers the highest continuous drain current (1.4 A) and lowest R_DS(on) (11 Ω) in this 1000 V class, making it optimal for thermally constrained flyback designs needing margin in conduction loss and avalanche endurance.

Availability

IRFBG20 is available at Aetrix Electronics and suitable for AC-DC flyback converters, industrial HV DC-DC modules, and capacitor discharge ignition systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFBG20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The IRFBG20 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for offline switching applications demanding avalanche robustness, dV/dt immunity, and cost-effective TO-220 packaging.

FAQ

What is the maximum continuous drain current for IRFBG20 at 100 °C case temperature?

The IRFBG20 supports 0.86 A continuous drain current at T_C = 100 °C, derived from its 1.4 A rating at 25 °C and linear derating factor of 0.43 W/°C. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 91123 and reflects thermal limits under sustained conduction in properly heatsinked TO-220AB layouts.

Does IRFBG20 have an integrated body diode, and what are its key parameters?

Yes, the IRFBG20 includes an integral reverse p-n junction body diode. Key parameters include 1.4 A continuous source-drain current (I_S), 5.6 A pulsed rating (I_SM), 1.5 V forward voltage (V_SD) at 1.4 A and 25 °C, and reverse recovery time (t_rr) of 130–190 ns - all specified in the Drain-Source Body Diode Characteristics section of the IRFBG20 datasheet.

Is IRFBG20 suitable for avalanche-mode operation, and what are its rated limits?

Yes, the IRFBG20 is explicitly repetitive avalanche rated: 1.4 A (I_AR) and 5.4 mJ (E_AR) under specified pulse conditions. It also supports single-pulse avalanche up to 200 mJ (E_AS). These ratings are validated per Vishay test conditions in Figure 12 and note "a" of the Absolute Maximum Ratings table in document 91123.

What is the gate threshold voltage range for IRFBG20, and how does it affect drive design?

The IRFBG20 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across temperature and unit variation, avoiding partial turn-on and excessive R_DS(on) in production designs.

Can IRFBG20 be used in surface-mount designs, or is it through-hole only?

The IRFBG20 is exclusively offered in the through-hole TO-220AB package, as confirmed by Vishay's ordering information and package drawings in document 91123. No surface-mount variant (e.g., DPAK or IPAK) exists for this part number; alternative high-voltage MOSFETs would be required for SMT layouts.

IRFBG20 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBG20 FAQ

1.How can I place an order for IRFBG20 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBG20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBG20 reliable?

The price and inventory of IRFBG20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBG20 is usually 5 days.

3.What payment methods are accepted for IRFBG20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBG20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBG20?

IRFBG20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBG20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBG20?

For technical support, including IRFBG20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBG20 requirements.

6.How does Aetrix verify that IRFBG20 is sourced from the original manufacturer or authorized distributors?

All IRFBG20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBG20 meets industry standards.

7.What is the process for return or replacement of IRFBG20?

All IRFBG20 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBG20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBG20 part is unused and in its original packaging.

Return procedure for IRFBG20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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