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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBG30PBF-BE3

Name: IRFBG30PBF-BE3
Brand: Vishay Siliconix
SKU: IRFBG30PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBG30PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBG30PBF-BE3.pdf

Description:: MOSFET N-CH 1000V 3.1A TO220AB

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Product details

Overview

IRFBG30PBF-BE3 from Vishay Siliconix is a 1000 V, 3.1 A N-channel power MOSFET in TO-220AB package, featuring 5.0 Ω R_DS(on) at V_GS = 10 V, 80 nC total gate charge, and repetitive avalanche rating for high-voltage switching in offline SMPS and industrial motor drives.

For engineers reviewing the IRFBG30PBF-BE3 datasheet, IRFBG30PBF-BE3 pinout, IRFBG30PBF-BE3 application, or IRFBG30PBF-BE3 equivalent, key selection criteria include its 1000 V blocking capability, 280 mJ single-pulse avalanche energy, dV/dt immunity up to 1.0 V/ns, and RoHS-compliant/halogen-free construction per ordering code BE3.

Technical Context

This third-generation power MOSFET uses planar vertical DMOS technology optimized for high-voltage unclamped inductive switching. Its ruggedized structure supports repetitive avalanche operation up to 3.1 A and 13 mJ, with body diode recovery time (trr) of 410–620 ns and Qrr of 1.3–2.0 μC under specified conditions.

The device delivers stable threshold voltage (2.0–4.0 V), low gate leakage (±100 nA), and controlled dynamic parameters: Ciss = 980 pF, Crss = 50 pF, and fast switching with td(on) = 12 ns, tr = 25 ns, td(off) = 89 ns, tf = 29 ns at V_DD = 500 V and R_g = 12 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1000 V - supports primary-side switching in 800 V AC-input offline converters without derating
R_DS(on)	5.0 Ω max at V_GS = 10 V - enables low conduction loss in <3.1 A continuous current applications
Q_g	80 nC max - determines gate drive power requirement and influences switching loss trade-off
E_AS	280 mJ single-pulse - allows safe energy absorption during unclamped inductive turn-off events
dV/dt rating	1.0 V/ns - ensures noise-immune operation in high-dV/dt environments like flyback snubbers
T_J range	−55 °C to +150 °C - supports operation in sealed industrial enclosures with limited airflow
R_thJC	1.0 °C/W max - enables 125 W power dissipation with minimal thermal interface resistance

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.0 mm lead pitch, and 16.5 mm × 10.6 mm footprint. Thermal pad on backside requires mechanical mounting to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 0.4–1.8 Ω gate input resistance simplifies RC snubber design
D (Drain)	High-voltage output node	Connected to internal die substrate and metal tab; electrically isolated from case mounting surface
S (Source)	Power return reference	Common node for load current return and gate drive reference; internal source inductance LS = 7.5 nH affects diode recovery

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 3.1 A I_AR and 13 mJ E_AR without degradation-enables robust overcurrent protection in hard-switched topologies
Dynamic dV/dt immunity	Rated 1.0 V/ns-prevents false turn-on during high-slew-rate transients in high-frequency converters
Low Q_gd/Q_g ratio	42/80 = 52.5%-reduces Miller effect, improving controllability during cross-conduction in half-bridge configurations
Body diode softness	trr = 410–620 ns with 1.3–2.0 μC Q_rr-minimizes voltage overshoot and EMI during freewheeling in inductive loads
Lead (Pb)-free & halogen-free	BE3 suffix confirms compliance with JEDEC JS709B and IPC-1752A-meets global environmental regulations without performance compromise

Applications

Industrial Motor Drives	Offline Switch-Mode Power Supplies
Use Scenario: Half-bridge gate driver stage in 1–2 kW variable-frequency drives for HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side switching element handling 600–800 V DC bus with 3.1 A RMS load current. Use Value: Repetitive avalanche rating absorbs inductive kickback during IGBT/MOSFET short-circuit events without failure.	Use Scenario: Primary-side switch in 30–60 W universal-input flyback converter for LED drivers and industrial sensors. IC Role / Device Role / Timing Role: 1000 V-rated power switch operating at 65–130 kHz with discontinuous conduction mode. Use Value: 5.0 Ω R_DS(on) and 80 nC Q_g balance conduction and switching losses to achieve >85% efficiency at full load.
High-Voltage DC-DC Converters	Capacitor Discharge Circuits
Use Scenario: Isolated forward converter in 48 V–400 V telecom rectifier modules requiring high reliability. IC Role / Device Role / Timing Role: Main power switch with 1000 V V_DS margin for 350 V nominal bus under line surge conditions. Use Value: 1.0 V/ns dV/dt rating prevents spurious turn-on during transformer leakage spike transients.	Use Scenario: Energy discharge switch in pulsed laser diode drivers and defibrillator capacitor banks. IC Role / Device Role / Timing Role: Fast-turn-off switch controlling 1–2 kV, 10–12 A pulse currents with sub-100 ns fall time. Use Value: 280 mJ E_AS withstands single-event energy dump without bond wire fusing or die cracking.

Industrial Motor Drives

Offline Switch-Mode Power Supplies

Use Scenario: Half-bridge gate driver stage in 1–2 kW variable-frequency drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side switching element handling 600–800 V DC bus with 3.1 A RMS load current.

Use Value: Repetitive avalanche rating absorbs inductive kickback during IGBT/MOSFET short-circuit events without failure.

Use Scenario: Primary-side switch in 30–60 W universal-input flyback converter for LED drivers and industrial sensors.

IC Role / Device Role / Timing Role: 1000 V-rated power switch operating at 65–130 kHz with discontinuous conduction mode.

Use Value: 5.0 Ω R_DS(on) and 80 nC Q_g balance conduction and switching losses to achieve >85% efficiency at full load.

High-Voltage DC-DC Converters

Capacitor Discharge Circuits

Use Scenario: Isolated forward converter in 48 V–400 V telecom rectifier modules requiring high reliability.

IC Role / Device Role / Timing Role: Main power switch with 1000 V V_DS margin for 350 V nominal bus under line surge conditions.

Use Value: 1.0 V/ns dV/dt rating prevents spurious turn-on during transformer leakage spike transients.

Use Scenario: Energy discharge switch in pulsed laser diode drivers and defibrillator capacitor banks.

IC Role / Device Role / Timing Role: Fast-turn-off switch controlling 1–2 kV, 10–12 A pulse currents with sub-100 ns fall time.

Use Value: 280 mJ E_AS withstands single-event energy dump without bond wire fusing or die cracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	1000 V, 10 A, R_DS(on) = 1.2 Ω, Q_g = 110 nC, TO-220FP package (full-pack)	Higher current rating but larger gate charge; lower R_DS(on) demands stronger gate driver	Preferred where higher continuous current (>5 A) and lower conduction loss are prioritized over switching speed
IXTH10N100L	1000 V, 10 A, R_DS(on) = 1.0 Ω, Q_g = 125 nC, TO-247 package	Superjunction architecture; higher peak current, larger package, no avalanche rating	Selected for high-efficiency PFC stages where avalanche ruggedness is not required and thermal headroom exists

Compared with STP10NK100ZFP and IXTH10N100L, the IRFBG30PBF-BE3 offers lower gate drive demand (80 nC vs. ≥110 nC), verified repetitive avalanche capability (13 mJ), and TO-220AB's cost-effective thermal interface-making it optimal for space-constrained, reliability-critical 3–5 A high-voltage switching.

Availability

IRFBG30PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, high-voltage DC-DC converters, and capacitor discharge circuits requiring stable component supply across extended production lifecycles.

Supply support for IRFBG30PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.

The IRFBG30PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for demanding unclamped inductive switching in industrial and telecom power systems where avalanche endurance and dV/dt immunity are critical.

FAQ

What is the maximum continuous drain current for IRFBG30PBF-BE3 at 100 °C case temperature?

The IRFBG30PBF-BE3 supports 2.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 3.1 A at 25 °C reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 75 °C in sustained operation. The IRFBG30PBF-BE3 datasheet provides Fig. 9 for precise current derating versus case temperature.

Does IRFBG30PBF-BE3 have a fully rated avalanche capability, and what are the test conditions?

Yes, the IRFBG30PBF-BE3 is repetitively avalanche rated per datasheet Section "Absolute Maximum Ratings": I_AR = 3.1 A and E_AR = 13 mJ. Test conditions are V_DD = 50 V, starting T_J = 25 °C, L = 55 mH, R_g = 25 Ω, and pulse width limited by junction temperature. The IRFBG30PBF-BE3 also specifies 280 mJ single-pulse avalanche energy under defined unclamped inductive test conditions.

What is the gate-source threshold voltage range for IRFBG30PBF-BE3, and how does it affect drive circuit design?

The IRFBG30PBF-BE3 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA, indicating standard-level-not logic-level-drive requirements. This means gate drive must reliably exceed 4.0 V to ensure full enhancement, and 10 V is recommended for minimum R_DS(on). The IRFBG30PBF-BE3's ±20 V V_GS rating allows use of standard 12 V gate drivers with margin.

How does the body diode performance of IRFBG30PBF-BE3 compare to typical FRDs in high-frequency applications?

The IRFBG30PBF-BE3 body diode exhibits t_rr = 410–620 ns and Q_rr = 1.3–2.0 μC at I_F = 3.1 A and dI/dt = 100 A/μs, making it slower than dedicated fast recovery diodes but sufficient for <100 kHz flyback freewheeling. Its V_SD = 1.8 V at 3.1 A increases conduction loss versus Schottky alternatives, but the IRFBG30PBF-BE3 integrates switching and recovery in one die, reducing board area.

Is IRFBG30PBF-BE3 suitable for use in zero-voltage switching (ZVS) resonant converters?

The IRFBG30PBF-BE3 is viable in ZVS topologies due to its low C_oss = 140 pF and Crss = 50 pF, enabling efficient resonant tank operation at 100–300 kHz. However, its 80 nC Q_g and 5.0 Ω R_DS(on) require careful gate drive sizing and thermal management. The IRFBG30PBF-BE3's avalanche rating adds margin against transient overvoltage during soft-switching transitions.

IRFBG30PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 980 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBG30PBF-BE3 FAQ

1.How can I place an order for IRFBG30PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBG30PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBG30PBF-BE3 reliable?

The price and inventory of IRFBG30PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBG30PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFBG30PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBG30PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBG30PBF-BE3?

IRFBG30PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBG30PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBG30PBF-BE3?

For technical support, including IRFBG30PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBG30PBF-BE3 requirements.

6.How does Aetrix verify that IRFBG30PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFBG30PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBG30PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFBG30PBF-BE3?

All IRFBG30PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBG30PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBG30PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFBG30PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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