Vishay Siliconix IRFD014

Overview

IRFD014 from Vishay Siliconix is a 60 V, 1.7 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and 175 °C maximum junction temperature. It serves as a low-cost, machine-insertable switching element in DC-DC converters, relay drivers, and motor control stages where thermal coupling via dual drain leads supports up to 1 W dissipation.

For engineers reviewing the IRFD014 datasheet, IRFD014 pinout, IRFD014 application, or IRFD014 equivalent, key selection criteria include its 60 V V_DS, 0.20 Ω on-resistance at 10 V drive, 11 nC Q_g, 4.5 V/ns peak diode recovery dV/dt rating, and HVMDIP through-hole package compatibility with automated insertion and end-stacking.

Technical Context

The IRFD014 employs a third-generation silicon process optimized for ruggedness and fast switching, with dynamic dV/dt capability enabling reliable operation under inductive load commutation. Its internal body diode exhibits 70–140 ns reverse recovery time and 0.20–0.40 μC Q_rr, supporting unclamped inductive switching up to 130 mJ avalanche energy.

Thermal design is enabled by dual-drain construction acting as a thermal link to the PCB, yielding a maximum R_thJA of 120 °C/W. Gate drive simplicity is ensured by a 2.0–4.0 V V_GS(th) and ±100 nA I_GSS, allowing direct interface with TTL/CMOS logic without level shifting.

Key Specifications

Pinout & Package

The IRFD014 is housed in the HVMDIP (High Voltage Mini-DIP) package: 4-pin, 0.1" lead pitch, dual-drain configuration with leads spaced 0.100" (2.54 mm) center-to-center. Package dimensions: 0.310" × 0.300" × 0.270" (7.87 × 7.62 × 6.86 mm), with dual drain pins providing mechanical and thermal anchoring to the PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFD120PbF and STP1NK60Z, the IRFD014 offers the best balance of low gate charge (11 nC), moderate on-resistance (0.20 Ω), and HVMDIP mechanical compatibility-making it optimal for cost-sensitive, medium-frequency (<200 kHz), 1–2 A switching applications where thermal coupling to PCB is critical.

Availability

IRFD014 is available at Aetrix Electronics and suitable for DC-DC converters, relay drivers, and brushed motor control requiring stable component supply, long-term manufacturability, and consistent HVMDIP through-hole placement.

Supply support for IRFD014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and manufacturability.

The IRFD series was designed specifically for cost-effective, high-reliability through-hole power switching in industrial controls, power supplies, and motor drives-leveraging dual-drain DIP packaging for enhanced thermal and mechanical robustness.

FAQ

What is the maximum continuous drain current for the IRFD014 at 100 °C ambient temperature?

The IRFD014 supports 1.2 A continuous drain current at T_A = 100 °C, derated from 1.7 A at 25 °C using the specified linear derating factor of 0.0083 W/°C. This value assumes adequate PCB copper area for thermal conduction and accounts for R_thJA = 120 °C/W. The IRFD014 must be mounted with both drain leads soldered to provide effective thermal path.

Does the IRFD014 have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRFD014 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Its reverse recovery time (t_rr) is 70–140 ns at T_J = 25 °C, I_F = 10 A, and dI/dt = 100 A/μs, with Q_rr ranging from 0.20 to 0.40 μC. These values are confirmed in the official Vishay datasheet (S21-0885-Rev. D) and define safe operating limits during freewheeling in inductive circuits.

Can the IRFD014 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRFD014 is rated for single-pulse avalanche operation with E_AS = 130 mJ under defined test conditions (V_DD = 25 V, L = 52 mH, R_g = 25 Ω, I_AS = 1.7 A). This rating is validated per Vishay's test methodology in Figure 12 and enables use in unclamped inductive switching applications such as relay snubbing or solenoid control without external clamping diodes.

What is the gate threshold voltage range for the IRFD014, and how does it affect microcontroller interfacing?

IRFD014 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA, making it compatible with standard 3.3 V and 5 V logic outputs. When driven by a 3.3 V GPIO, the device operates in its linear region with elevated R_DS(on); full enhancement requires ≥4.5 V. For reliable saturation, the IRFD014 should be paired with 5 V logic or a simple gate boost stage.

Is the IRFD014 RoHS-compliant and lead-free, and which variant designation indicates this?

Yes, the IRFD014PbF variant is Vishay's lead-free, RoHS-compliant version of the IRFD014, as explicitly stated in the ordering information table and confirmed in the "Material categorization" note referencing document 99912. The "PbF" suffix denotes lead-free termination, and the device meets JEDEC J-STD-609 Category 1 marking requirements.