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Vishay Siliconix IRFD014PBF
- Part No.:
- IRFD014PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD014PBF.pdf
- Description:
- MOSFET N-CH 60V 1.7A 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:98
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Product details
Overview
IRFD014PBF from Vishay Siliconix is a 60 V, 1.7 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.20 Ω RDS(on) at VGS = 10 V, 11 nC total gate charge, and 175 °C maximum junction temperature - designed for low-power switching in DC-DC converters, relay drivers, and LED load controls.
For engineers reviewing the IRFD014PBF datasheet, IRFD014PBF pinout, IRFD014PBF application, or IRFD014PBF equivalent, key selection criteria include its machine-insertable HVMDIP footprint, dual-drain thermal path enabling 1.3 W dissipation, fast 10 ns turn-on delay, and rugged unclamped avalanche rating of 130 mJ - critical for inductive load handling in industrial control modules.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve low RDS(on) with robust dV/dt immunity (4.5 V/ns) and intrinsic body diode recovery (trr = 70–140 ns). Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 5 V and 10 V logic-level drive circuits.
The HVMDIP package integrates dual drain terminals as a shared thermal path to the PCB, supporting up to 1 W continuous power dissipation without heatsinking. Internal source and drain inductances (LS = 6.0 nH, LD = 4.0 nH) are characterized for accurate switching waveform modeling in high-speed gate-drive layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports operation across 24 V and 48 V industrial bus systems with margin for transients |
| RDS(on) | 0.20 Ω @ VGS = 10 V - enables <1.7 W conduction loss at 1.7 A continuous current |
| Qg | 11 nC - allows efficient switching with low gate-drive power in 100–500 kHz SMPS designs |
| td(on) | 10 ns - minimizes overlap loss during hard-switching in synchronous rectifier or motor gate drivers |
| EAS | 130 mJ - sustains repetitive unclamped inductive energy in relay coil snubbing and solenoid control |
| TJ(max) | +175 °C - permits reliable operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood) |
| RthJA | 120 °C/W - defines thermal limit for PCB-mounted operation without forced airflow or heatsink |
Pinout & Package
HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4), gate (pin 2), source (pin 3); mold dimensions 7.87 × 7.62 × 6.86 mm (L × W × H); lead-free per RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain | Primary high-side switch node; electrically and thermally tied to Pin 4 for enhanced heat spreading |
| Pin 2 (G) | Gate | Control input requiring ≤ ±20 V; 3.1 nC gate-source charge enables simple resistor-based drive |
| Pin 3 (S) | Source | Power return reference; internal source inductance (6.0 nH) affects diode reverse recovery behavior |
| Pin 4 (D2) | Drain | Second drain terminal - parallel connection with Pin 1 reduces effective RDS(on) and improves thermal coupling to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - prevents false turn-on during high-slew-rate voltage transients in motor drives |
| End stackable package | HVMDIP mechanical design allows vertical stacking of multiple units on 0.1" grid for compact multi-channel boards |
| 175 °C operating temperature | Enables use in sealed industrial controllers where ambient exceeds 105 °C without derating penalties |
| Fast switching | 10 ns td(on), 50 ns tr, 13 ns td(off), 19 ns tf - reduces switching losses below 500 kHz |
| Ease of paralleling | Low RDS(on) tempco and matched threshold ensure stable current sharing without external ballast resistors |
Applications
| DC-DC Converter Secondary Side | Industrial Relay Driver |
|---|---|
|
Use Scenario: Low-voltage synchronous rectification in isolated 5–12 V output flyback or forward converters. IC Role / Device Role / Timing Role: Power switch controlling secondary-side current flow; operates in hard-switched mode at 100–300 kHz. Use Value: 0.20 Ω RDS(on) reduces conduction loss vs. Schottky diodes, improving efficiency by ~2–3% at 1.5 A loads. |
Use Scenario: Driving 24 V DC industrial relays with coil inductance >100 mH and hold current ~20 mA. IC Role / Device Role / Timing Role: High-side or low-side switch providing controlled turn-off with active clamping via body diode. Use Value: 130 mJ avalanche energy rating absorbs inductive kickback without external snubber components. |
| LED Load Switching | Microcontroller GPIO Expansion |
|
Use Scenario: PWM dimming of 12 V LED strings (up to 1.7 A) in signage or panel lighting systems. IC Role / Device Role / Timing Role: Low-side constant-current switch modulated at 1–20 kHz to avoid audible noise. Use Value: 10 ns turn-on delay and 19 ns fall time support clean PWM edges, minimizing LED current overshoot. |
Use Scenario: Expanding microcontroller I/O capability to drive higher-current peripherals (e.g., sensors, buzzers, small solenoids). IC Role / Device Role / Timing Role: Logic-level compatible buffer between 3.3 V/5 V MCU outputs and 12–24 V loads. Use Value: Gate threshold (2.0–4.0 V) ensures full enhancement from standard MCU GPIO, eliminating level-shifter need. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V VDS, 1.15 Ω RDS(on), TO-92 package, 0.45 A ID | Higher voltage rating but lower current and much higher on-resistance - suitable only for low-power, high-voltage leakage-sensitive circuits | Select when primary requirement is 600 V blocking with minimal footprint; not interchangeable for 1.7 A switching. |
| FQP30N06L | 60 V VDS, 0.028 Ω RDS(on), TO-220 package, 30 A ID, logic-level gate | Lower RDS(on) and higher current, but larger TO-220 footprint and no dual-drain thermal path | Choose for higher-efficiency, higher-current designs where board space allows TO-220 mounting and heatsinking. |
Compared with STP1NK60ZFP and FQP30N06L, the IRFD014PBF uniquely balances medium-current capability (1.7 A), ultra-low-profile HVMDIP packaging, and dual-drain thermal management - making it optimal for space-constrained, thermally isolated PCBs where 1 W dissipation must be managed without heatsinks.
Availability
IRFD014PBF is available at Aetrix Electronics and suitable for industrial relay drivers, LED load switches, and low-power DC-DC converter secondary-side rectification requiring stable component supply and long-term obsolescence mitigation.
Supply support for IRFD014PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, passive elements, and sensors, with emphasis on reliability, power efficiency, and ruggedized performance.
The IRFD014PBF belongs to Vishay Siliconix's HVMDIP power MOSFET family, engineered for cost-sensitive, automated-assembly applications demanding thermal robustness and ease of layout in space-constrained industrial control modules.
FAQ
What is the maximum continuous drain current for the IRFD014PBF at 100 °C ambient temperature?
The IRFD014PBF supports 1.2 A continuous drain current at TA = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects its 120 °C/W junction-to-ambient thermal resistance and 1.3 W maximum power dissipation at 25 °C ambient. At elevated temperatures, conduction loss and thermal stability must be verified using the normalized RDS(on) vs. temperature curve in the datasheet. The IRFD014PBF maintains safe operation within these limits when mounted on ≥1 sq-in FR-4 copper area.
Does the IRFD014PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFD014PBF integrates a monolithic body diode with typical forward voltage VSD = 1.6 V at IS = 1.7 A and TJ = 25 °C, reverse recovery time trr = 70–140 ns, and reverse recovery charge Qrr = 0.20–0.40 μC. These values are measured under standardized conditions (IF = 10 A, dI/dt = 100 A/μs) and enable predictable snubbing behavior in inductive switching. The IRFD014PBF body diode is rated for continuous 1.7 A and pulsed 14 A, matching its MOSFET current ratings.
Can the IRFD014PBF be driven directly from a 3.3 V microcontroller GPIO pin?
No - the IRFD014PBF has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V VGS for full enhancement (RDS(on) = 0.20 Ω). At 3.3 V, it operates in weak inversion with RDS(on) >5 Ω, causing excessive heating. A level-shifting driver or dedicated gate driver IC is required. The IRFD014PBF is not a logic-level MOSFET; for 3.3 V direct drive, consider alternatives like FDN340P or SI2302.
What is the significance of the dual drain configuration in the IRFD014PBF HVMDIP package?
The dual drain (pins 1 and 4) in the IRFD014PBF provides parallel conduction paths and a shared thermal interface to the PCB, reducing effective thermal resistance and improving power dissipation uniformity. This design allows 1.3 W continuous power handling without heatsinking - critical for dense industrial PCB layouts. The IRFD014PBF's dual-drain structure also lowers source inductance impact during switching transitions, enhancing EMI performance compared to single-drain DIP variants.
Is the IRFD014PBF suitable for avalanche energy handling in unclamped inductive switching?
Yes - the IRFD014PBF is rated for 130 mJ single-pulse avalanche energy (EAS) under defined test conditions (VDD = 25 V, IAS = 1.7 A, L = 52 mH). This makes it suitable for relay coil suppression, solenoid control, and other unclamped inductive loads where voltage spikes exceed VDS. Repeated avalanche operation must respect pulse width and duty cycle limits per Figure 11 to avoid junction overheating. The IRFD014PBF's ruggedized die design supports this capability without external clamping.
IRFD014PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 310 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD014PBF FAQ
1.How can I place an order for IRFD014PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD014PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD014PBF reliable?
The price and inventory of IRFD014PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD014PBF is usually 5 days.
3.What payment methods are accepted for IRFD014PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD014PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD014PBF?
IRFD014PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD014PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD014PBF?
For technical support, including IRFD014PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD014PBF requirements.
6.How does Aetrix verify that IRFD014PBF is sourced from the original manufacturer or authorized distributors?
All IRFD014PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD014PBF meets industry standards.
7.What is the process for return or replacement of IRFD014PBF?
All IRFD014PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD014PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD014PBF part is unused and in its original packaging.
Return procedure for IRFD014PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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