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Vishay Siliconix IRFD020PBF
- Part No.:
- IRFD020PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD020PBF.pdf
- Description:
- MOSFET N-CH 50V 2.4A 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:5,191
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Product details
Overview
IRFD020PBF from Vishay Siliconix is a 50 V, 2.4 A N-channel power MOSFET in HVMDIP (High Voltage Mini Dual-In-Line) package, featuring 0.10 Ω RDS(on) at VGS = 10 V, 24 nC total gate charge, and fast switching with 13 ns turn-on delay. It serves as a low-side switch in DC-DC converters, printer motor drivers, and telecom power supplies where automatic PCB insertion and thermal stability are required.
For engineers reviewing the IRFD020PBF datasheet, IRFD020PBF pinout, IRFD020PBF application, or IRFD020PBF equivalent, key selection criteria include its 50 V VDS, 0.10 Ω on-resistance at 10 V drive, 120 °C/W RthJA, HVMDIP leadform compatibility with wave soldering, and body diode recovery time of 130 ns (typical).
Technical Context
The IRFD020PBF uses Vishay's HVMDIP process to achieve low RDS(on) (0.080 Ω typ.) while maintaining high transconductance (7.3 S typ.) and rugged avalanche capability (2.2 A unclamped inductive current). Its geometry supports stable operation from −55 °C to +150 °C junction temperature.
Designed for high-volume automated assembly, the device integrates a monolithic N-channel enhancement-mode structure with an integral source-drain body diode (VSD = 1.4 V at 2.4 A), optimized for clamped inductive switching (19 A ILM) and fast turn-off (24 ns td(off)).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 50 V - Maximum drain-source blocking voltage; defines safe operating range in 24–48 V systems |
| RDS(on) @ VGS = 10 V | 0.10 Ω max - Enables <1.2 W conduction loss at 3.5 A continuous drain current |
| Qg | 24 nC max - Determines gate drive power requirement and switching speed in PWM circuits |
| ID (continuous) @ TC = 25 °C | 2.4 A - Thermal-limited output current with heatsink; derates to 1.5 A at 100 °C case |
| tr / tf | 55–83 ns / 26–39 ns - Supports >1 MHz switching in hard-switched topologies with low EMI |
| RthJA | 120 °C/W max - Specifies worst-case junction-to-ambient thermal resistance without heatsink |
| VGS(th) | 2.0–4.0 V - Ensures reliable turn-on with standard 5 V logic-level gate drivers |
Pinout & Package
HVMDIP (High Voltage Mini Dual-In-Line) package: 4-pin, through-hole, end-stackable, low-profile (max height 7.36 mm), compatible with automatic insertion equipment and wave soldering. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires ≤20 V |VGS|; 500 nA leakage ensures low standby power |
| Pin 2 | Drain | Main high-side current path; electrically tied to Pin 4; rated for 50 V and 19 A pulsed |
| Pin 3 | Source | Reference node for gate drive; connects to body diode cathode; carries full load current |
| Pin 4 | Drain | Second drain terminal; enables parallel connection or enhanced thermal spreading via dual leads |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching with low Qg/Qgd | 24 nC Qg, 7.1 nC Qgd - Reduces switching losses and improves efficiency in 100–500 kHz SMPS |
| Enhanced thermal stability | RDS(on) variation <2× from 25 °C to 125 °C - Maintains predictable conduction loss across operating range |
| Dual-drain HVMDIP leadframe | Pins 2 & 4 both drain - Lowers effective package inductance and improves current sharing in paralleled layouts |
| Robust body diode | trr = 130 ns typ., Qrr = 0.34 μC - Minimizes reverse recovery loss in synchronous rectifier and flyback applications |
| Automated assembly support | End-stackable, compact footprint (7.87 × 7.62 mm) - Optimized for high-throughput pick-and-place and wave soldering |
Applications
| Printer Motor Driver | DC-DC Converter Switch |
|---|---|
Use Scenario: Driving stepper or DC motors in inkjet/laser printers requiring burst current up to 19 A. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling motor phase current with PWM duty cycle modulation. Use Value: 0.10 Ω RDS(on) limits I²R heating during 2.4 A continuous operation; fast tf (39 ns max) reduces motor commutation noise. |
Use Scenario: Primary-side switch in isolated 24 V input buck or forward converters delivering ≤15 W. IC Role / Device Role / Timing Role: Hard-switched power transistor synchronized to controller IC with 100–300 kHz frequency. Use Value: 24 nC Qg enables efficient drive with low-power gate drivers; 50 V rating accommodates 48 V bus transients. |
| Telecom Power Supply | Industrial Sensor Interface |
Use Scenario: Hot-swap FET or OR-ing diode replacement in 48 V telecom rectifier modules. IC Role / Device Role / Timing Role: Reverse-polarity protection and inrush limiting switch with controlled turn-on via gate resistor. Use Value: ±20 V VGS rating allows robust gate control under surge conditions; 150 °C TJ(max) supports sealed enclosure operation. |
Use Scenario: Solid-state relay replacement in PLC digital output modules switching 24 V DC loads. IC Role / Device Role / Timing Role: Load switch enabling/disabling solenoids, valves, or indicator LEDs under microcontroller command. Use Value: 2.0–4.0 V VGS(th) ensures clean turn-on with 3.3 V or 5 V GPIO; HVMDIP mechanical robustness withstands industrial vibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK50Z | 500 V VDS, 1.7 A ID, 4.5 Ω RDS(on) - Higher voltage, lower current, much higher on-resistance | Designed for offline SMPS primary side; unsuitable for 24–48 V low-loss switching | Select only if 500 V blocking is required; not a functional substitute for IRFD020PBF in low-voltage, high-current roles |
| IRF520NPBF | 100 V VDS, 9.2 A ID, 0.27 Ω RDS(on) - Higher voltage rating but 2.7× higher on-resistance at same current | General-purpose TO-220 switch; lacks HVMDIP automation features and dual-drain layout | Use when higher voltage margin or TO-220 mounting is needed; expect ~2.7× higher conduction loss at 2.4 A |
Compared with STP2NK50Z and IRF520NPBF, the IRFD020PBF delivers optimal balance of low on-resistance (0.10 Ω), compact HVMDIP packaging, and 2.4 A continuous current in 48 V-class systems-making it uniquely suited for space-constrained, high-volume automated power switching where thermal and drive efficiency are critical.
Availability
IRFD020PBF is available at Aetrix Electronics and suitable for printer motor drivers, telecom power supplies, and industrial sensor interfaces requiring stable component supply, consistent HVMDIP leadform, and long-term production continuity.
Supply support for IRFD020PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific packaging.
The IRFD020PBF belongs to Vishay's HVMDIP power MOSFET family, engineered for high-volume automated assembly in computing, telecom, and consumer power systems where low-profile, end-stackable, and wave-solder-compatible packaging is essential.
FAQ
What is the maximum continuous drain current for IRFD020PBF at 100 °C case temperature?
The IRFD020PBF supports 1.5 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the HVMDIP package without heatsinking. At 25 °C case temperature, the rating rises to 2.4 A. Designers must verify junction temperature using RthJA = 120 °C/W and actual power dissipation to ensure operation remains within −55 °C to +150 °C TJ limits. The IRFD020PBF datasheet specifies linear derating beyond 25 °C.
Does IRFD020PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFD020PBF integrates a monolithic source-drain body diode with VSD = 1.4 V (max) at IS = 2.4 A and TC = 25 °C. Its reverse recovery time is 130 ns (typical) at TJ = 25 °C, IF = 15 A, and dI/dt = 100 A/μs, with Qrr = 0.34 μC (typical). These values make the IRFD020PBF suitable for freewheeling and synchronous rectification in non-isolated DC-DC converters where moderate recovery performance is acceptable.
Can IRFD020PBF be driven directly by a 3.3 V microcontroller GPIO?
No-IRFD020PBF has a gate threshold voltage range of 2.0–4.0 V, and its RDS(on) is specified at VGS = 10 V. A 3.3 V drive will result in incomplete turn-on and significantly elevated RDS(on), risking thermal failure at rated current. The IRFD020PBF requires a dedicated gate driver or level-shifting circuit to deliver ≥10 V to ensure full enhancement. Logic-level MOSFETs like IRLML6344 are better suited for direct 3.3 V GPIO drive.
What is the significance of the dual-drain (Pins 2 and 4) configuration in IRFD020PBF?
The dual-drain configuration in the IRFD020PBF reduces effective package inductance and improves current distribution in high-di/dt applications. Pins 2 and 4 are internally connected to the same drain region, allowing either single-point or split routing to minimize loop area. This layout lowers electromagnetic interference and enhances reliability in motor drive and converter switching nodes. It also facilitates mechanical stability during automated insertion and wave soldering-key advantages of the HVMDIP package used in the IRFD020PBF.
Is IRFD020PBF RoHS-compliant and halogen-free?
Yes, IRFD020PBF is lead (Pb)-free and RoHS-compliant, as indicated by the "PbF" suffix in its ordering code and confirmed in Vishay's material declaration (doc# 99912). It meets JEDEC JS709B and IEC 61249-2-21 requirements for halogen-free materials (<900 ppm Cl, <900 ppm Br, <1500 ppm total halogens). Full compliance documentation is available at www.vishay.com/doc?99912 for the IRFD020PBF.
IRFD020PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD020PBF FAQ
1.How can I place an order for IRFD020PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD020PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD020PBF reliable?
The price and inventory of IRFD020PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD020PBF is usually 5 days.
3.What payment methods are accepted for IRFD020PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD020PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD020PBF?
IRFD020PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD020PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD020PBF?
For technical support, including IRFD020PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD020PBF requirements.
6.How does Aetrix verify that IRFD020PBF is sourced from the original manufacturer or authorized distributors?
All IRFD020PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD020PBF meets industry standards.
7.What is the process for return or replacement of IRFD020PBF?
All IRFD020PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD020PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD020PBF part is unused and in its original packaging.
Return procedure for IRFD020PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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