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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD024

Name: IRFD024
Brand: Vishay Siliconix
SKU: IRFD024
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD024

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD024.pdf

Description:: MOSFET N-CH 60V 2.5A 4DIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFD024 from Vishay Siliconix is a 60 V, 2.5 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 175 °C maximum junction temperature. It serves as a low-cost, machine-insertable switching element in DC-DC converters, motor control stages, and relay drivers requiring up to 1 W power dissipation.

For engineers reviewing the IRFD024 datasheet, IRFD024 pinout, IRFD024 application, or IRFD024 equivalent, key selection criteria include its 60 V V_DS, 0.10 Ω on-resistance, 25 nC gate charge, 4.5 V/ns peak diode recovery dV/dt rating, and HVMDIP thermal stackability for board-level power density optimization.

Technical Context

The IRFD024 is a third-generation planar VDMOS device optimized for fast switching and rugged unclamped inductive switching, with 91 mJ single-pulse avalanche energy rating and dynamic dV/dt capability up to 4.5 V/ns. Its internal source/drain inductances (L_S = 6.0 nH, L_D = 4.0 nH) are characterized for accurate switching waveform modeling.

Designed for automatic insertion and end-stacking, the HVMDIP package uses dual drain leads as thermal paths to the PCB, enabling 1.3 W power dissipation at 25 °C ambient with R_thJA ≤ 120 °C/W. Gate threshold voltage (2.0–4.0 V) and low 5.8 nC Q_gs support simple drive requirements with standard logic-level gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 24 V system switch applications with margin against transients.
R_DS(on)	0.10 Ω @ V_GS = 10 V - Enables <1.3 W conduction loss at 3.6 A continuous drain current (derated).
Q_g	25 nC - Determines gate drive power and switching speed; compatible with low-current drivers (e.g., microcontroller GPIO + buffer).
E_AS	91 mJ - Supports reliable operation in inductive load switching without external snubbers in moderate-energy circuits.
T_J max	+175 °C - Allows sustained operation in high-ambient environments such as enclosed industrial controls or automotive under-hood modules.
dV/dt (diode)	4.5 V/ns - Ensures robust body diode commutation during hard-switching, reducing risk of spurious turn-on.

Pinout & Package

HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.100" lead pitch, dual drain configuration for enhanced thermal conduction to PCB copper. Overall dimensions: 7.87–8.38 mm × 7.62–10.79 mm × 6.86–7.36 mm (L × W × H). Molded plastic body with tin-plated leads (Pb-free per IRFD024PbF).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current-carrying terminal (drain)	One of two parallel drain connections; electrically identical to Pin 4; used for thermal anchoring to heatsink or ground plane.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring minimal drive current; threshold range 2.0–4.0 V enables compatibility with 3.3 V/5 V logic.
Pin 3 (Source)	Reference node for gate drive and current return	Common source connection; internal bond wire inductance (6.0 nH) affects switching ringing and must be considered in layout.
Pin 4 (Drain)	Main current-carrying terminal (drain)	Second drain lead, mirror of Pin 1; both pins must be soldered to maximize thermal performance and current sharing.

Key Features

Feature	Design Value
Dynamic dV/dt rating	4.5 V/ns - Verified body diode recovery behavior prevents false triggering during high-slew-rate commutation.
End-stackable HVMDIP	Standard 0.1" pin spacing and low-profile design allow vertical stacking of multiple IRFD024 units to increase current capacity without redesigning PCB footprint.
175 °C operating temperature	Rated junction temperature enables use in sealed enclosures or near heat sources where ambient exceeds 100 °C.
Fast switching with low Q_g/Q_gd	25 nC total gate charge and 11 nC gate-drain charge yield short 13 ns turn-on delay and 42 ns fall time at R_g = 18 Ω, supporting >100 kHz PWM operation.
Simple drive requirements	Low 5.8 nC Q_gs and 2.0–4.0 V V_GS(th) permit direct drive from microcontrollers or low-power gate drivers without level-shifting.

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: High-efficiency 12 V to 5 V step-down converter in industrial sensor nodes with space-constrained PCBs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200 kHz, handling peak currents up to 3 A. Use Value: 0.10 Ω R_DS(on) minimizes conduction loss, while 25 nC Q_g ensures efficient gate drive with minimal driver overhead.	Use Scenario: Bidirectional 24 V brushed motor control in automated valve actuators with duty-cycle-limited operation. IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated body diode conducting reverse recovery current during PWM off-time. Use Value: 4.5 V/ns dV/dt rating and 91 mJ E_AS prevent failure during inductive flyback, eliminating need for external freewheeling diodes.
AC Solid-State Relay	Power Supply OR-ing Circuit
Use Scenario: Low-cost, zero-crossing–free AC switching module for HVAC fan control using DC-triggered triac drive interface. IC Role / Device Role / Timing Role: Isolated gate-controlled switch interfacing between optocoupler output and main AC load path via transformer or resistive divider. Use Value: 60 V V_DS and 2.5 A I_D support 24 V control logic driving 120 V AC loads through step-up transformer coupling.	Use Scenario: Redundant 12 V power rail combining in telecom shelf systems where two independent PSUs feed common bus. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss OR-ing switch replacing Schottky diodes to reduce voltage drop and heat generation. Use Value: 0.10 Ω R_DS(on) yields <30 mV drop at 300 mA, cutting conduction loss by >75% versus 0.4 V Schottky, improving system efficiency and thermal margin.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V to 5 V step-down converter in industrial sensor nodes with space-constrained PCBs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200 kHz, handling peak currents up to 3 A.

Use Value: 0.10 Ω R_DS(on) minimizes conduction loss, while 25 nC Q_g ensures efficient gate drive with minimal driver overhead.

Use Scenario: Bidirectional 24 V brushed motor control in automated valve actuators with duty-cycle-limited operation.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated body diode conducting reverse recovery current during PWM off-time.

Use Value: 4.5 V/ns dV/dt rating and 91 mJ E_AS prevent failure during inductive flyback, eliminating need for external freewheeling diodes.

AC Solid-State Relay

Power Supply OR-ing Circuit

Use Scenario: Low-cost, zero-crossing–free AC switching module for HVAC fan control using DC-triggered triac drive interface.

IC Role / Device Role / Timing Role: Isolated gate-controlled switch interfacing between optocoupler output and main AC load path via transformer or resistive divider.

Use Value: 60 V V_DS and 2.5 A I_D support 24 V control logic driving 120 V AC loads through step-up transformer coupling.

Use Scenario: Redundant 12 V power rail combining in telecom shelf systems where two independent PSUs feed common bus.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss OR-ing switch replacing Schottky diodes to reduce voltage drop and heat generation.

Use Value: 0.10 Ω R_DS(on) yields <30 mV drop at 300 mA, cutting conduction loss by >75% versus 0.4 V Schottky, improving system efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, 1 A I_D, 11 Ω R_DS(on) - higher voltage rating but significantly higher on-resistance and lower current capability.	Targeted at high-voltage flyback SMPS primary side; unsuitable for 24 V load switching due to excessive conduction loss.	Select only if 600 V blocking is required; not a functional substitute for IRFD024 in low-voltage, high-current roles.
FQP30N06L	60 V V_DS, 30 A I_D, 0.023 Ω R_DS(on) - higher current, lower R_DS(on), TO-220 package instead of HVMDIP.	Requires PCB rework for through-hole TO-220 footprint; superior thermal performance but incompatible with automated DIP insertion or stacking.	Choose when higher current (>5 A) and better thermal management are needed; not drop-in due to package and pinout mismatch.

Compared with STP1NK60Z and FQP30N06L, the IRFD024 uniquely balances 60 V rating, 2.5 A current, 0.10 Ω on-resistance, and HVMDIP stackability-making it optimal for cost-sensitive, space-constrained, machine-inserted 24 V power switches where thermal coupling to PCB is prioritized over maximum current.

Availability

IRFD024 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, and solid-state relay modules requiring stable component supply, long-term manufacturability, and Pb-free compliance (IRFD024PbF).

Supply support for IRFD024 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.

The IRFD024 belongs to Vishay's HVMDIP power MOSFET family, engineered for cost-effective, high-volume automated assembly in industrial control, power conversion, and electro-mechanical replacement applications.

FAQ

What is the maximum continuous drain current for the IRFD024 at 100 °C ambient temperature?

The IRFD024 supports 1.8 A continuous drain current at TA = 100 °C, derated from 2.5 A at 25 °C using the linear derating factor of 0.0083 W/°C. This value assumes proper PCB copper area for thermal conduction and accounts for R_DS(on) increase with temperature. The IRFD024 must be mounted with both drain pins soldered to maximize heat transfer in real-world layouts.

Does the IRFD024 have a built-in body diode, and what are its key parameters?

Yes, the IRFD024 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 2.5 A continuous source-drain current, 1.5 V forward voltage at 2.5 A and 25 °C, 80–180 ns reverse recovery time, and 0.29–0.64 μC reverse recovery charge. These values are measured under standardized conditions (TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs) and directly impact hard-switching performance in buck or half-bridge topologies using the IRFD024.

Can the IRFD024 be used in parallel configurations, and what design considerations apply?

Yes, the IRFD024 is explicitly designed for ease of paralleling, supported by its positive R_DS(on) temperature coefficient and matched threshold voltage distribution. To ensure current sharing, use identical gate drive paths with individual 10–22 Ω gate resistors, minimize source inductance asymmetry, and mount devices symmetrically on the PCB. The IRFD024's HVMDIP package allows physical stacking to further improve thermal uniformity across paralleled units.

What is the gate threshold voltage range for the IRFD024, and how does it affect drive compatibility?

The IRFD024 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at ID = 250 μA, making it compatible with both 3.3 V and 5 V logic families without level shifting. However, full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) = 0.10 Ω. Driving the IRFD024 at 5 V yields higher on-resistance (~0.25 Ω typical), increasing conduction loss-so gate drive design must ensure ≥10 V swing for optimal IRFD024 performance.

Is the IRFD024 suitable for avalanche-rated operation, and what is its rated energy?

Yes, the IRFD024 is specified for repetitive unclamped inductive switching with a single-pulse avalanche energy (E_AS) rating of 91 mJ under defined test conditions (V_DD = 25 V, I_AS = 2.5 A, L = 16 mH, R_g = 25 Ω). This rating validates safe operation during inductive load turn-off transients. Repeated avalanche stress is not guaranteed; the IRFD024 should be applied within SOA limits shown in Figure 2 of its datasheet for long-term reliability.

IRFD024 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD024 FAQ

1.How can I place an order for IRFD024 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD024 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD024 reliable?

The price and inventory of IRFD024 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD024 is usually 5 days.

3.What payment methods are accepted for IRFD024?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD024 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD024?

IRFD024 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD024 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD024?

For technical support, including IRFD024 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD024 requirements.

6.How does Aetrix verify that IRFD024 is sourced from the original manufacturer or authorized distributors?

All IRFD024 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD024 meets industry standards.

7.What is the process for return or replacement of IRFD024?

All IRFD024 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD024, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD024 part is unused and in its original packaging.

Return procedure for IRFD024:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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