My Inquiry
My Account
Vishay Siliconix IRFD024PBF
- Part No.:
- IRFD024PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD024PBF.pdf
- Description:
- MOSFET N-CH 60V 2.5A 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:130
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFD024PBF from Vishay Siliconix is a 60 V, 2.5 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.10 Ω RDS(on) at VGS = 10 V, 25 nC total gate charge, and 175 °C maximum junction temperature. It serves as a low-cost, machine-insertable switching device in DC-DC converters, motor control stages, and relay drivers requiring <1 W power dissipation.
For engineers reviewing the IRFD024PBF datasheet, IRFD024PBF pinout, IRFD024PBF application, or IRFD024PBF equivalent, key selection criteria include its 60 V VDS, 0.10 Ω on-resistance, 25 nC Qg, 120 °C/W RthJA, and dual-drain thermal path for board-level heat sinking in through-hole power designs.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve ruggedized avalanche performance (91 mJ EAS) and fast switching with 13 ns turn-on delay and 42 ns fall time. Its gate threshold voltage (2.0–4.0 V) and low 5.8 nC Qgs enable simple drive from microcontrollers or logic-level sources without external level shifting.
The HVMDIP package integrates dual drain leads as a thermal link to the PCB, supporting up to 1 W continuous dissipation at 25 °C ambient. Internal source/drain inductances (LS = 6.0 nH, LD = 4.0 nH) are specified for accurate switching waveform modeling in unclamped inductive load circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for low-voltage DC switching applications |
| RDS(on) | 0.10 Ω @ VGS = 10 V - Enables ≤250 mW conduction loss at 1.5 A continuous current |
| Qg | 25 nC - Determines gate driver current requirement (~1.25 mA avg. for 20 kHz switching) |
| ID (continuous) | 2.5 A @ TA = 25 °C - Rated for through-hole mounted operation without heatsink below 100 °C ambient |
| RthJA | 120 °C/W - Thermal resistance defines 1.3 W max power dissipation at 25 °C ambient |
| EAS | 91 mJ - Supports reliable unclamped inductive switching in relay/snubberless solenoid drivers |
| VGS(th) | 2.0–4.0 V - Ensures turn-on compatibility with 3.3 V and 5 V logic outputs |
Pinout & Package
HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4), gate (pin 2), source (pin 3). Molded plastic body with internal thermal connection between both drain leads and die backside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current-carrying drain terminal | Electrically and thermally connected to die drain; used with Pin 4 for parallel current path and PCB copper pour heat sinking |
| Pin 2 (Gate) | Control electrode | Low-charge input (5.8 nC Qgs) requiring minimal drive strength; sensitive to ESD (±20 V rating) |
| Pin 3 (Source) | Reference node for gate drive and current return | Internal connection to MOSFET source; forms common reference for VGS and body diode cathode |
| Pin 4 (Drain) | Main current-carrying drain terminal | Identical to Pin 1 - dual drain configuration enables higher thermal conductivity to PCB and improved current sharing in paralleled layouts |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - Enables stable operation in noisy high-di/dt environments without spurious turn-on |
| 175 °C operating temperature | Supports extended lifetime in sealed enclosures or high-ambient industrial controls without derating |
| End stackable package | Enables vertical stacking of multiple IRFD024PBF units on same PCB footprint for modular power stage scaling |
| Fast switching | 13 ns td(on), 42 ns tf - Reduces switching losses in 20–100 kHz SMPS and PWM motor drives |
| Ease of paralleling | Positive RDS(on) temperature coefficient ensures inherent current sharing between multiple devices |
Applications
| DC-DC Converter Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down (buck) converter in industrial sensor module supplying 5 V/1 A from 12 V battery input. IC Role / Device Role / Timing Role: Primary high-side switch controlling energy transfer into output inductor; operates at 50 kHz with 30%–70% duty cycle. Use Value: 0.10 Ω RDS(on) limits conduction loss to 150 mW at 1.5 A peak, while 25 nC Qg keeps gate drive loss under 0.5 mW at 5 V drive. | Use Scenario: H-bridge half-bridge leg driving 24 V, 1.8 A brushed motor in HVAC damper actuator. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during PWM commutation; rated for 100% duty cycle at 100 °C ambient. Use Value: Dual-drain thermal path sustains 1.8 A continuous current with ≤1.0 W dissipation using 2 oz copper pour, eliminating need for discrete heatsink. |
| Relay/Solenoid Driver | Overvoltage Protection Switch |
Use Scenario: Solid-state replacement for 24 V, 1.5 A electromechanical relay in PLC I/O module. IC Role / Device Role / Timing Role: Unclamped inductive load switch absorbing flyback energy via intrinsic body diode and avalanche capability. Use Value: 91 mJ single-pulse avalanche energy safely clamps 24 V × 1.5 A × 2.5 ms inductive kickback without external snubber. | Use Scenario: Reverse-polarity and overvoltage protection circuit for 12 V automotive accessory port. IC Role / Device Role / Timing Role: N-channel high-side switch configured with charge pump gate drive to block >60 V transients. Use Value: 60 V VDS rating provides 2× margin over 12 V nominal with surge tolerance; 175 °C TJ rating ensures reliability during load dump events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V VDS, 1 A ID, TO-92 package, RDS(on) = 22 Ω - higher voltage, lower current, much higher on-resistance | Designed for high-voltage, low-current flyback snubbers; unsuitable for 2.5 A load switching | Select only if >400 V blocking is required and current ≤1 A; not a functional substitute for IRFD024PBF |
| FQP30N06L | 60 V VDS, 30 A ID, TO-220 package, RDS(on) = 0.023 Ω - higher current, lower RDS(on), different package and thermal path | Requires heatsink for >2 A continuous; incompatible with DIP auto-insertion and stackable layout | Choose when >2.5 A current or surface-mount compatibility is needed; not pin-compatible or drop-in |
Compared with STP1NK60ZFP and FQP30N06L, the IRFD024PBF uniquely balances 2.5 A current handling, 0.10 Ω on-resistance, and HVMDIP through-hole manufacturability - making it optimal for cost-sensitive, medium-power, auto-inserted industrial controls where thermal management relies on PCB copper rather than discrete heatsinks.
Availability
IRFD024PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, relay replacements, and overvoltage protection circuits requiring stable component supply across industrial OEM production cycles.
Supply support for IRFD024PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on ruggedness, reliability, and application-specific optimization.
The IRFD series targets cost-effective, through-hole power switching in industrial controls and legacy-automated systems, prioritizing ease of assembly, thermal integration with PCBs, and robust unclamped inductive switching performance.
FAQ
What is the maximum continuous drain current for IRFD024PBF at 100 °C ambient temperature?
The IRFD024PBF supports 1.8 A continuous drain current at TA = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects its 120 °C/W junction-to-ambient thermal resistance and 175 °C maximum junction temperature limit. At this condition, the device maintains safe operation without external heatsinking when mounted on standard FR-4 PCB with adequate copper area.
Does IRFD024PBF have avalanche capability, and how is it rated?
Yes, the IRFD024PBF is rated for single-pulse avalanche energy of 91 mJ under defined test conditions (VDD = 25 V, IAS = 2.5 A, L = 16 mH, Rg = 25 Ω). This capability allows it to safely absorb inductive flyback energy in relay, solenoid, and motor drive applications without external snubbers, provided pulse width and duty cycle remain within datasheet limits.
Can IRFD024PBF be driven directly by a 3.3 V microcontroller GPIO?
No - the IRFD024PBF has a gate threshold voltage range of 2.0–4.0 V and requires 10 V for full enhancement (RDS(on) = 0.10 Ω). Driving it with 3.3 V results in high RDS(on) (>1 Ω) and excessive conduction loss. A level-shifting gate driver or logic-level MOSFET (e.g., IRLML6344) is required for 3.3 V control.
What is the purpose of the dual drain leads in the IRFD024PBF HVMDIP package?
The dual drain leads (pins 1 and 4) in the IRFD024PBF provide parallel current paths and a low-thermal-resistance connection from the MOSFET die to the PCB copper pour. This configuration enhances heat dissipation - enabling up to 1 W power handling at 25 °C ambient - and improves current sharing when multiple devices are paralleled on the same board.
Is IRFD024PBF suitable for synchronous rectification in a buck converter?
No - the IRFD024PBF is not optimized for synchronous rectification due to its relatively high 0.10 Ω RDS(on) and 1.5 V body diode forward voltage (VSD). Synchronous rectifiers require ultra-low RDS(on) (<10 mΩ) and low VSD to outperform Schottky diodes; the IRFD024PBF is intended for primary-side switching, not secondary-side rectification.
IRFD024PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD024PBF FAQ
1.How can I place an order for IRFD024PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD024PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD024PBF reliable?
The price and inventory of IRFD024PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD024PBF is usually 5 days.
3.What payment methods are accepted for IRFD024PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD024PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD024PBF?
IRFD024PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD024PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD024PBF?
For technical support, including IRFD024PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD024PBF requirements.
6.How does Aetrix verify that IRFD024PBF is sourced from the original manufacturer or authorized distributors?
All IRFD024PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD024PBF meets industry standards.
7.What is the process for return or replacement of IRFD024PBF?
All IRFD024PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD024PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD024PBF part is unused and in its original packaging.
Return procedure for IRFD024PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFD024PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
