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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD110

Name: IRFD110
Brand: Vishay Siliconix
SKU: IRFD110
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD110

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD110.pdf

Description:: MOSFET N-CH 100V 1A 4DIP

Quantity:: RFQ Add To RFQ list

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Inventory:3,745

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Product details

Overview

IRFD110 from Vishay Siliconix is a 100 V, 1.0 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.54 Ω R_DS(on) at V_GS = 10 V, 8.3 nC total gate charge, and 175 °C maximum junction temperature - designed for low-power switching in industrial controls, power supplies, and motor drivers.

For engineers reviewing the IRFD110 datasheet, IRFD110 pinout, IRFD110 application, or IRFD110 equivalent, this discrete MOSFET supports automatic insertion, end-stackable mounting, repetitive avalanche operation, and fast switching with validated dV/dt immunity up to 5.5 V/ns - critical for robustness in inductive load switching and flyback converter topologies.

Technical Context

The IRFD110 employs a third-generation silicon process optimized for ruggedness and cost-effective machine-insertion packaging. Its dual-drain configuration provides thermal conduction to the PCB, enabling 1 W power dissipation without heatsinking at TA = 25 °C.

It delivers specified avalanche energy (E_AS = 140 mJ) and diode recovery performance (t_rr = 100–200 ns, Q_rr = 0.44–0.88 μC), with gate drive compatibility requiring ≥10 V for full enhancement and ±20 V absolute maximum V_GS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports DC input rails up to 80 V with margin for transient spikes in offline or automotive auxiliary supplies
R_DS(on) @ V_GS = 10 V	0.54 Ω - enables ≤0.3 W conduction loss at 0.75 A continuous drain current, suitable for low-duty-cycle switching
Q_g	8.3 nC - determines gate driver current requirement (~166 mA peak for 50 ns rise time), compatible with standard logic-level drivers
I_D (continuous, T_A = 25 °C)	1.0 A - defines maximum steady-state load current without derating; drops to 0.71 A at 100 °C ambient
E_AS	140 mJ - quantifies single-pulse unclamped inductive energy handling capability, critical for relay/snubberless solenoid drive
dV/dt rating	5.5 V/ns - ensures immunity to parasitic turn-on during high-slew-rate voltage transients in half-bridge or buck configurations
T_J(max)	+175 °C - allows operation in sealed enclosures or high-ambient environments without thermal shutdown

Pinout & Package

HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4), gate (pin 2), source (pin 3); body height ~7.36 mm, length ~8.38 mm, width ~10.79 mm; thermally enhanced via dual drain-to-PCB contact.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (D1)	Drain	Primary high-side current path; electrically and thermally connected to pin 4 for parallel current sharing and heat spreading
Pin 2 (G)	Gate	Control terminal requiring ≥10 V to fully enhance; protected by ±20 V absolute max rating and <100 nA leakage
Pin 3 (S)	Source	Reference node for gate drive; connects to internal body diode cathode and serves as return path for load current
Pin 4 (D2)	Drain	Second drain terminal - identical to pin 1; used for mechanical stability and doubled thermal interface area to PCB

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for I_AR = 1.0 A and E_AR = 0.13 mJ per pulse - enables reliable operation under repeated inductive switching stress without derating
Dynamic dV/dt immunity	5.5 V/ns minimum - prevents false triggering in noisy environments such as motor drives or relay coils with fast voltage edges
175 °C operating temperature	Full specification guaranteed from –55 °C to +175 °C - eliminates need for external thermal monitoring in sealed industrial modules
Machine-insertable HVMDIP	Standard 0.1" pin spacing and end-stackable profile - supports automated through-hole assembly and compact vertical stacking on PCBs
Low gate charge	Q_g = 8.3 nC with Q_gd/Q_gs = 1.65 - ensures fast, controllable switching transitions and reduced driver power loss

Applications

DC-DC Converter Switch	Industrial Relay Driver
Use Scenario: Low-power isolated flyback or buck converter in programmable logic controllers (PLCs) with 24 V input and 5–12 V output. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; operates at 50–200 kHz with duty cycle modulation. Use Value: 0.54 Ω R_DS(on) limits conduction loss to <0.4 W at 0.8 A, while 140 mJ E_AS absorbs leakage inductance spikes without snubbers.	Use Scenario: Driving 24 V DC coil relays in factory automation panels where space and thermal management are constrained. IC Role / Device Role / Timing Role: High-side load switch activated by microcontroller GPIO; handles inductive turn-off transients. Use Value: Repetitive avalanche rating (I_AR = 1.0 A) safely clamps back-EMF without external TVS, reducing BOM count and board area.
Motor Control Interface	Power Supply OR-ing
Use Scenario: Bidirectional H-bridge half-bridge leg for small DC motors (<5 W) in medical pumps or HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching element with body diode conducting freewheeling current during PWM off-time. Use Value: Body diode t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC minimize switching loss and voltage overshoot during commutation.	Use Scenario: Redundant 12 V supply OR-ing in telecom shelf power systems where two sources feed one load. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode replacement; controlled by external comparator. Use Value: Low R_DS(on) reduces forward drop to <6.5 mV at 120 mA, cutting heat generation vs. Schottky diodes and improving efficiency by >1.2%.

DC-DC Converter Switch

Industrial Relay Driver

Use Scenario: Low-power isolated flyback or buck converter in programmable logic controllers (PLCs) with 24 V input and 5–12 V output.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; operates at 50–200 kHz with duty cycle modulation.

Use Value: 0.54 Ω R_DS(on) limits conduction loss to <0.4 W at 0.8 A, while 140 mJ E_AS absorbs leakage inductance spikes without snubbers.

Use Scenario: Driving 24 V DC coil relays in factory automation panels where space and thermal management are constrained.

IC Role / Device Role / Timing Role: High-side load switch activated by microcontroller GPIO; handles inductive turn-off transients.

Use Value: Repetitive avalanche rating (I_AR = 1.0 A) safely clamps back-EMF without external TVS, reducing BOM count and board area.

Motor Control Interface

Power Supply OR-ing

Use Scenario: Bidirectional H-bridge half-bridge leg for small DC motors (<5 W) in medical pumps or HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element with body diode conducting freewheeling current during PWM off-time.

Use Value: Body diode t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC minimize switching loss and voltage overshoot during commutation.

Use Scenario: Redundant 12 V supply OR-ing in telecom shelf power systems where two sources feed one load.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode replacement; controlled by external comparator.

Use Value: Low R_DS(on) reduces forward drop to <6.5 mV at 120 mA, cutting heat generation vs. Schottky diodes and improving efficiency by >1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, 1.05 Ω R_DS(on), TO-92 package, no avalanche rating	Higher voltage rating but higher on-resistance and no repetitive avalanche capability	Choose only if >100 V blocking is required and thermal margin permits higher conduction loss
FQP1N60	600 V V_DS, 11 Ω R_DS(on), TO-220 package, no dV/dt or avalanche specs published	Lower cost but significantly slower switching and unsuitable for high-dV/dt or inductive snubberless designs	Select only for non-critical linear or low-frequency switching where speed and ruggedness are not design constraints

Compared with STP1NK60Z and FQP1N60, the IRFD110 offers superior thermal interface via dual-drain DIP, verified 5.5 V/ns dV/dt immunity, and guaranteed repetitive avalanche operation - making it uniquely suited for compact, reliable, and maintenance-free industrial control modules.

Availability

IRFD110 is available at Aetrix Electronics and suitable for industrial relay drivers, low-power DC-DC converters, and motor interface circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free assembly.

Supply support for IRFD110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFD110 belongs to Vishay's HVMDIP power MOSFET family, engineered for cost-sensitive, space-constrained, and thermally demanding applications where machine-insertion, ruggedness, and repeatable avalanche performance are essential.

FAQ

What is the maximum continuous drain current for the IRFD110 at 100 °C ambient temperature?

The IRFD110 supports 0.71 A continuous drain current at T_A = 100 °C, based on its 1.3 W maximum power dissipation and 120 °C/W junction-to-ambient thermal resistance. This derating ensures safe operation without heatsinking in enclosed industrial enclosures where ambient exceeds 75 °C. The IRFD110 maintains full specification compliance across this range.

Does the IRFD110 have a specified body diode reverse recovery time?

Yes, the IRFD110 specifies t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC at T_J = 25 °C, I_F = 5.6 A, and dI/dt = 100 A/μs. These values are measured using the standard unclamped inductive test circuit and directly impact switching loss and voltage overshoot in freewheeling applications. The IRFD110's body diode is integral to its function in H-bridge and flyback topologies.

Is the IRFD110 suitable for avalanche-mode operation in production designs?

Yes - the IRFD110 is explicitly rated for repetitive avalanche with I_AR = 1.0 A and E_AR = 0.13 mJ per pulse, and single-pulse E_AS = 140 mJ. Vishay validates this capability per JEDEC standards, and the IRFD110 datasheet includes test conditions (V_DD = 25 V, L = 52 mH, R_g = 25 Ω). It is qualified for snubberless inductive switching in relay and solenoid drivers.

What is the gate threshold voltage range for the IRFD110?

The IRFD110 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA, meaning it begins conducting weakly at ~2 V but requires ≥10 V gate drive for full enhancement and specified R_DS(on). This threshold spread ensures consistent turn-on behavior across temperature and process variation. The IRFD110 is not a logic-level MOSFET and must be driven with a dedicated gate driver or buffered microcontroller output.

Can the IRFD110 be used in parallel configurations?

Yes - the IRFD110 supports paralleling due to its positive R_DS(on) temperature coefficient and matched dynamic parameters (Q_g, Q_gd, C_iss). Its dual-drain HVMDIP package also enables symmetrical PCB layout and thermal coupling. For stable current sharing, use matched gate resistors (≤25 Ω) and ensure equal trace lengths. The IRFD110's design explicitly cites "ease of paralleling" as a key feature in its official documentation.

IRFD110 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD110 FAQ

1.How can I place an order for IRFD110 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD110 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD110 reliable?

The price and inventory of IRFD110 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD110 is usually 5 days.

3.What payment methods are accepted for IRFD110?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD110 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD110?

IRFD110 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD110 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD110?

For technical support, including IRFD110 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD110 requirements.

6.How does Aetrix verify that IRFD110 is sourced from the original manufacturer or authorized distributors?

All IRFD110 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD110 meets industry standards.

7.What is the process for return or replacement of IRFD110?

All IRFD110 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD110, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD110 part is unused and in its original packaging.

Return procedure for IRFD110:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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