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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD110PBF

Name: IRFD110PBF
Brand: Vishay Siliconix
SKU: IRFD110PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD110PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD110PBF.pdf

Description:: MOSFET N-CH 100V 1A 4DIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFD110PBF from Vishay Siliconix is a 100 V, 1.0 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.54 Ω R_DS(on) at V_GS = 10 V, 175 °C maximum junction temperature, and repetitive avalanche rating-designed for low-power switching in industrial controls, relay drivers, and DC-DC converter primary-side switches.

For engineers reviewing the IRFD110PBF datasheet, IRFD110PBF pinout, IRFD110PBF application, or IRFD110PBF equivalent, this page delivers verified electrical parameters, thermal performance data, body diode recovery characteristics, and real-world switching behavior under unclamped inductive load conditions.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for fast switching, ruggedized design, and cost-effective machine insertion. Its dual-drain HVMDIP package provides thermal conduction to the PCB while supporting end-stacking and automated assembly.

The IRFD110PBF integrates a robust intrinsic body diode with 100–200 ns reverse recovery time and supports dynamic dV/dt up to 5.5 V/ns. It is rated for repetitive avalanche energy (0.13 mJ) and single-pulse avalanche energy (140 mJ), enabling reliable operation in inductive switching circuits without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; suitable for 48 V and 24 V industrial bus systems with margin.
R_DS(on) @ V_GS = 10 V	0.54 Ω - On-resistance determines conduction loss; yields ≤ 0.3 W dissipation at 0.71 A continuous current.
I_D Continuous @ T_A = 25 °C	1.0 A - Absolute max continuous drain current; derates linearly to 0.71 A at 100 °C ambient.
Q_g	8.3 nC - Total gate charge defines drive strength requirement; compatible with standard logic-level gate drivers.
T_J Max	+175 °C - High-temperature rating enables use in sealed enclosures or high-ambient environments without forced cooling.
E_AS	140 mJ - Single-pulse avalanche energy rating allows safe operation during inductive turn-off transients.
trr / Q_rr	100–200 ns / 0.44–0.88 µC - Body diode recovery specs critical for synchronous rectification and flyback snubberless designs.

Pinout & Package

HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual-drain configuration (pins 1 & 4 = Drain), pin 2 = Gate, pin 3 = Source. Dual drain improves thermal coupling to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 & Pin 4	Drain (D)	Common high-side switch node; dual terminals reduce package inductance and improve heat spreading to board.
Pin 2	Gate (G)	Control input; requires ≥ 10 V for full enhancement; ±20 V absolute max gate-source voltage.
Pin 3	Source (S)	Power return path and reference for gate drive; connects to system ground or low-side switch node.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation in inductive load switching without external clamping; supports I_AR = 1.0 A repetitive current.
Dynamic dV/dt rating	5.5 V/ns - Resists false turn-on due to high-speed voltage transients in motor drive or SMPS noise environments.
175 °C operating temperature	Permits deployment in thermally constrained spaces (e.g., sealed industrial controllers) without derating penalties.
Fast switching & low Q_g	8.3 nC total gate charge and sub-20 ns rise/fall times enable efficient operation up to ~100 kHz in hard-switched topologies.
End-stackable HVMDIP	Allows vertical stacking of multiple units on 0.1" grid for compact multi-channel driver modules or redundancy layouts.

Applications

Industrial Relay Driver	Low-Power DC-DC Converter
Use Scenario: Driving 24 V/48 V electromagnetic relays in PLC I/O modules where space and thermal management are constrained. IC Role / Device Role / Timing Role: High-side switch controlling relay coil current; operates in on/off mode with <100 ms duty cycle. Use Value: 175 °C rating ensures reliability across extended temperature ranges; avalanche capability absorbs coil flyback energy without snubber.	Use Scenario: Primary-side switch in isolated 5–12 V output flyback converters powering microcontrollers or sensors. IC Role / Device Role / Timing Role: Pulse-width modulated (PWM) power switch operating at 50–100 kHz with unclamped inductive turn-off. Use Value: 140 mJ single-pulse avalanche energy safely handles leakage inductance spikes; low R_DS(on) minimizes conduction loss at light loads.
Motor Control Interface	LED Constant-Current Driver
Use Scenario: Low-current H-bridge half-bridge leg or direction control switch for small DC motors (<5 W) in HVAC actuators. IC Role / Device Role / Timing Role: Unidirectional power switch enabling bidirectional motor control via complementary pairing. Use Value: Fast switching (tr = 16 ns) reduces transition losses; body diode recovery (trr ≤ 200 ns) limits shoot-through risk during commutation.	Use Scenario: Constant-current sink for indicator LEDs or status lighting in industrial panels requiring long life and thermal stability. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator using source degeneration or feedback sensing. Use Value: Tight V_GS(th) range (2.0–4.0 V) enables predictable turn-on with simple resistor biasing; 1.0 A rating supports multi-LED strings.

Industrial Relay Driver

Low-Power DC-DC Converter

Use Scenario: Driving 24 V/48 V electromagnetic relays in PLC I/O modules where space and thermal management are constrained.

IC Role / Device Role / Timing Role: High-side switch controlling relay coil current; operates in on/off mode with <100 ms duty cycle.

Use Value: 175 °C rating ensures reliability across extended temperature ranges; avalanche capability absorbs coil flyback energy without snubber.

Use Scenario: Primary-side switch in isolated 5–12 V output flyback converters powering microcontrollers or sensors.

IC Role / Device Role / Timing Role: Pulse-width modulated (PWM) power switch operating at 50–100 kHz with unclamped inductive turn-off.

Use Value: 140 mJ single-pulse avalanche energy safely handles leakage inductance spikes; low R_DS(on) minimizes conduction loss at light loads.

Motor Control Interface

LED Constant-Current Driver

Use Scenario: Low-current H-bridge half-bridge leg or direction control switch for small DC motors (<5 W) in HVAC actuators.

IC Role / Device Role / Timing Role: Unidirectional power switch enabling bidirectional motor control via complementary pairing.

Use Value: Fast switching (tr = 16 ns) reduces transition losses; body diode recovery (trr ≤ 200 ns) limits shoot-through risk during commutation.

Use Scenario: Constant-current sink for indicator LEDs or status lighting in industrial panels requiring long life and thermal stability.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator using source degeneration or feedback sensing.

Use Value: Tight V_GS(th) range (2.0–4.0 V) enables predictable turn-on with simple resistor biasing; 1.0 A rating supports multi-LED strings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60ZFP	600 V V_DS, 1.05 Ω R_DS(on), TO-92 package - higher voltage rating but higher on-resistance and lower thermal mass.	Preferred for higher-voltage AC-input auxiliary supplies; unsuitable for high-frequency switching due to higher C_iss (350 pF).	Select when >400 V blocking is required; avoid if layout space or thermal performance at 100 V is critical.
FQP1N60	600 V V_DS, 11 Ω R_DS(on), TO-220 - much higher on-resistance, larger footprint, no avalanche rating.	Suitable only for low-frequency, low-duty-cycle switching; lacks dV/dt immunity and avalanche ruggedness.	Use only as last-resort replacement in non-critical, low-speed applications; not recommended for inductive loads or high-reliability designs.

Compared with STP1NK60ZFP and FQP1N60, the IRFD110PBF offers superior thermal performance in compact DIP form, guaranteed avalanche capability, and optimized gate charge for logic-level drive-making it the preferred choice for 100 V, <1 A industrial switching where reliability and board area matter.

Availability

IRFD110PBF is available at Aetrix Electronics and suitable for industrial relay drivers, low-power DC-DC converters, and motor interface circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFD110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and high-temperature reliability.

The IRFD110PBF belongs to Vishay's HVMDIP power MOSFET product line, engineered for cost-sensitive, machine-insertable, high-reliability industrial switching applications where thermal robustness and transient immunity are essential.

FAQ

What is the maximum continuous drain current for IRFD110PBF at 100 °C ambient temperature?

The IRFD110PBF supports 0.71 A continuous drain current at T_A = 100 °C, based on its linear derating factor of 0.0083 W/°C and 1.3 W maximum power dissipation at 25 °C. This value assumes adequate PCB copper area for thermal conduction from the dual-drain leads. Exceeding this current risks exceeding the 175 °C maximum junction temperature.

Does IRFD110PBF have avalanche capability, and how is it specified?

Yes, the IRFD110PBF is explicitly rated for repetitive avalanche operation: I_AR = 1.0 A and E_AR = 0.13 mJ. It also supports single-pulse avalanche energy up to 140 mJ (E_AS) under defined test conditions (V_DD = 25 V, L = 52 mH, I_AS = 2.0 A). These ratings are validated per Figure 12 in the official Vishay datasheet S21-0885-Rev. D.

What is the gate threshold voltage range for IRFD110PBF, and why does it matter in circuit design?

The IRFD110PBF has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 µA. This wide threshold impacts drive design: logic-level microcontrollers (3.3 V) may partially enhance the device, increasing R_DS(on) and conduction loss. For full enhancement and minimal on-resistance, ≥10 V gate drive is recommended-verified by the 0.54 Ω R_DS(on) spec at V_GS = 10 V.

Can IRFD110PBF be used in parallel configurations, and what design considerations apply?

Yes, the IRFD110PBF is designed for ease of paralleling, as stated in its features. Key considerations include matched gate drive impedance (to ensure simultaneous turn-on), symmetrical PCB layout to minimize loop inductance, and thermal coupling between devices. Its positive R_DS(on) temperature coefficient promotes current sharing, but individual gate resistors (e.g., 10–24 Ω) are recommended to damp oscillation.

What is the body diode reverse recovery time (trr) of IRFD110PBF, and how does it affect switching performance?

The IRFD110PBF body diode exhibits t_rr = 100–200 ns at T_J = 25 °C, I_F = 5.6 A, and dI/dt = 100 A/µs. This relatively fast recovery reduces switching losses and voltage overshoot during commutation in flyback or buck-derived topologies. However, designers must account for Q_rr = 0.44–0.88 µC in loss calculations and ensure gate drive strength avoids cross-conduction during the recovery interval.

IRFD110PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD110PBF FAQ

1.How can I place an order for IRFD110PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD110PBF reliable?

The price and inventory of IRFD110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD110PBF is usually 5 days.

3.What payment methods are accepted for IRFD110PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD110PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD110PBF?

IRFD110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD110PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD110PBF?

For technical support, including IRFD110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD110PBF requirements.

6.How does Aetrix verify that IRFD110PBF is sourced from the original manufacturer or authorized distributors?

All IRFD110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD110PBF meets industry standards.

7.What is the process for return or replacement of IRFD110PBF?

All IRFD110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD110PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD110PBF part is unused and in its original packaging.

Return procedure for IRFD110PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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