Vishay Siliconix IRFD113

Overview

IRFD113 from Vishay Siliconix is a 60 V, 0.8 A N-channel enhancement-mode power MOSFET in HVMDIP (4-pin dual-in-line) package, optimized for automatic PCB insertion in low-power switching applications such as printer logic, telecom line drivers, and consumer appliance control circuits. It features 0.6 Ω typical R_DS(on) at V_GS = 10 V, 7 nC total gate charge, and integrated body diode with 100 ns reverse recovery time.

For engineers reviewing the IRFD113 datasheet, IRFD113 pinout, IRFD113 application, or IRFD113 equivalent, key selection considerations include its 60 V drain-source rating, 0.8 A continuous drain current at T_C = 25 °C, HVMDIP through-hole package compatibility with auto-insertion equipment, and suitability for low-duty-cycle, medium-speed switching where low drive current and thermal stability are critical.

Technical Context

The IRFD113 implements Vishay's HVMDIP (High-Voltage Metal-Dielectric-Insulated Package) technology, combining planar DMOS cell geometry with proprietary passivation to achieve ruggedness and stable R_DS(on) over temperature. Its gate threshold voltage range of 2.0–4.0 V ensures reliable turn-on with standard 5 V TTL/CMOS logic drivers.

Designed for unidirectional switching in non-synchronous topologies, the device supports clamped inductive loads up to 6.4 A peak with built-in body diode recovery (t_rr = 100 ns, Q_rr = 0.2 μC). Thermal resistance R_thJA is rated at 120 °C/W, limiting usable power dissipation to 1.0 W at T_C = 25 °C without heatsinking.

Key Specifications

Pinout & Package

HVMDIP (4-pin dual-in-line plastic package), 10.16 mm × 6.35 mm × 4.57 mm profile, end-stackable, lead (Pb)-free per RoHS (IRFD113PbF).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFD9113 and STP1NK60Z, the IRFD113 delivers optimal trade-off of low conduction loss, fast switching, and automated assembly compatibility specifically for ≤60 V, ≤1 A DC switching - making it unsuitable for high-side or high-voltage use cases covered by those alternatives.

Availability

IRFD113 is available at Aetrix Electronics and suitable for printer motor drivers, telecom line protection circuits, and consumer appliance relay replacements requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFD113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific packaging.

The IRFD113 belongs to Vishay's HVMDIP power MOSFET family, engineered for high-volume automated assembly in cost-sensitive, thermally constrained applications like office equipment and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for the IRFD113?

The IRFD113 has a maximum continuous drain current (I_D) of 0.8 A at case temperature T_C = 25 °C. This rating decreases linearly with increasing case temperature at 0.008 W/°C, reaching zero at approximately 155 °C. Derating must be applied in real-world layouts where heatsinking is limited, especially given its 120 °C/W junction-to-ambient thermal resistance. The IRFD113 is not rated for sustained 0.8 A operation above 25 °C case temperature without thermal mitigation.

Does the IRFD113 support logic-level gate drive?

The IRFD113 has a gate threshold voltage (V_GS(th)) range of 2.0–4.0 V, meaning it can turn on with 3.3 V or 5 V logic signals. However, its R_DS(on) specification (0.6–0.8 Ω) is guaranteed only at V_GS = 10 V. At 5 V, R_DS(on) rises significantly - typically >2 Ω - increasing conduction loss. For reliable low-R_DS(on) operation, the IRFD113 should be driven with ≥10 V gate voltage, not logic-level alone.

Can the IRFD113 be used in parallel configurations?

Yes, the IRFD113 is explicitly designed for paralleling, as noted in its datasheet features. Its positive temperature coefficient of R_DS(on) ensures current sharing stability across multiple devices. To achieve balanced operation, matched gate resistors and symmetrical PCB layout (equal trace lengths to gate and source) are required. The IRFD113's low gate charge (7 nC max) also minimizes driver loading when multiple units are switched simultaneously.

What is the purpose of the dual drain pins (Pins 1 and 4) on the IRFD113?

Pins 1 and 4 of the IRFD113 are internally connected to the same drain node and serve to reduce package inductance and improve current-handling capability. Using both pins lowers effective L_D (specified at 4.0 nH) and spreads thermal load across two solder joints. In PCB layout, both drain pins must be routed to the same net - splitting them or using only one degrades performance and violates the device's thermal and electrical specifications defined for the IRFD113.

Is the IRFD113 suitable for synchronous rectification in DC-DC converters?

The IRFD113 can be used in low-frequency (<100 kHz), low-current synchronous rectifier applications due to its 100 ns body diode reverse recovery time and 0.6 Ω R_DS(on). However, its 7 nC gate charge and relatively high C_iss (200 pF max) limit efficiency at higher frequencies. For modern high-efficiency designs, dedicated low-Q_g/low-C_oss MOSFETs are preferred. The IRFD113 remains viable where cost, availability, and automated assembly outweigh marginal efficiency gains.