Vishay Siliconix IRFD113PBF

Overview

IRFD113PBF from Vishay Siliconix is a 60 V, 0.8 A N-channel enhancement-mode power MOSFET in HVMDIP (4-pin dual-in-line) package, featuring 0.6 Ω typical R_DS(on) at V_GS = 10 V, 7 nC total gate charge, and fast switching with 10–25 ns turn-on/off delays. It serves as a low-power load switch in computer peripheral power rails, printer motor drivers, and telecom DC-DC converter secondary-side synchronous rectification.

For engineers reviewing the IRFD113PBF datasheet, IRFD113PBF pinout, IRFD113PBF application, or IRFD113PBF equivalent, key selection criteria include its HVMDIP through-hole compatibility with automatic insertion equipment, low drive current requirement (≤2 nC gate-source charge), stable on-resistance over temperature (±20% from −55 °C to +150 °C), and rugged clamped inductive switching capability (6.4 A pulsed drain current).

Technical Context

This device implements Vishay's HVMDIP (High-Voltage Metal-Dielectric-Insulated Package) technology, combining planar DMOS cell geometry with optimized gate oxide processing to achieve low R_DS(on) while maintaining high transconductance (0.8–1.2 S) and intrinsic ruggedness against avalanche and dv/dt-induced turn-on. Its 4-pin DIP layout isolates source and drain terminals for simplified PCB routing in low-voltage, low-current switching nodes.

The IRFD113PBF operates as a voltage-controlled unidirectional switch with gate threshold voltage of 2.0–4.0 V, enabling direct drive from 5 V logic without level-shifting. Its body diode exhibits 2 V forward drop at 0.8 A and 100 ns reverse recovery time at 150 °C, supporting moderate-frequency freewheeling in inductive loads.

Key Specifications

Pinout & Package

HVMDIP (4-pin dual-in-line plastic) package: 10.16 mm × 5.08 mm × 4.06 mm height, lead-free, RoHS-compliant, end-stackable, compatible with standard DIP auto-insertion equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with IRFD113PBF, IRFD120PBF offers double the current capacity at the cost of 71% higher gate charge, while STP1NK60ZFP trades current and package compatibility for extreme voltage rating-making IRFD113PBF optimal for compact, low-power, auto-inserted 24–48 V DC switching where thermal and layout constraints dominate.

Availability

IRFD113PBF is available at Aetrix Electronics and suitable for printer motor drivers, computer power sequencing circuits, and telecom DC-DC converter secondary-side rectification requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFD113PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and precision resistors with emphasis on reliability, ruggedness, and application-specific packaging.

The IRFD series targets high-volume, cost-sensitive applications requiring automated assembly-its HVMDIP package and optimized die design were engineered specifically for computer, printer, and telecom equipment where compact size, stackability, and insertion compatibility are critical.

FAQ

What is the maximum continuous drain current rating for IRFD113PBF at 100 °C case temperature?

The IRFD113PBF has a linear derating factor of 0.008 W/°C and maximum power dissipation of 1.0 W at T_C = 25 °C. At T_C = 100 °C, allowable power drops to 0.4 W. Using R_DS(on) = 0.8 Ω max, the corresponding continuous drain current is √(0.4 W / 0.8 Ω) ≈ 0.71 A. This value is consistent with the datasheet's derating curve (Fig. 11), confirming IRFD113PBF supports ~0.7 A continuous at 100 °C case temperature.

Does IRFD113PBF have a specified avalanche energy rating (E_AS)?

No, the IRFD113PBF datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). While the device demonstrates ruggedness in clamped inductive switching tests (I_LM = 6.4 A, L = 100 μH), Vishay qualifies this as "clamped" rather than "unclamped avalanche." Designers must rely on external clamping components or ensure operation remains within SOA limits shown in Fig. 3; IRFD113PBF is not rated for unclamped avalanche operation.

Can IRFD113PBF be used with 3.3 V microcontroller GPIOs without a gate driver?

IRFD113PBF has a gate threshold voltage range of 2.0–4.0 V, so 3.3 V may partially enhance the channel but will not fully saturate it. At V_GS = 3.3 V, R_DS(on) rises significantly above 0.8 Ω (typical curves show >3 Ω), increasing conduction loss. For reliable 0.8 A switching, V_GS ≥ 5 V is required. Therefore, IRFD113PBF should not be directly driven by 3.3 V GPIOs in high-current applications without a level-shifting buffer or gate driver.

What is the thermal resistance from junction to ambient (R_thJA) for IRFD113PBF on a standard FR-4 PCB?

The datasheet specifies R_thJA max = 120 °C/W under JEDEC test conditions (single-layer 1 in² copper pad). On a typical 2-layer FR-4 PCB with 1 in² copper pour connected to all pins, measured R_thJA is ~95–110 °C/W. With internal thermal vias and 2 oz copper, it can reach ~70 °C/W. The IRFD113PBF's HVMDIP package relies heavily on PCB copper area for heat dissipation-no heatsink is rated, and performance depends entirely on board-level thermal design.

Is IRFD113PBF suitable for use as a synchronous rectifier in a 5 V, 1 A flyback converter?

Yes, IRFD113PBF is suitable for 5 V, 1 A flyback synchronous rectification when driven with proper gate timing. Its 0.6 Ω R_DS(on) yields ~0.6 W conduction loss at 1 A-exceeding its 1.0 W P_D rating-but actual RMS current in flyback secondaries is typically <0.5 A. With appropriate gate drive (≥5 V, low-impedance), dead-time control, and thermal management, IRFD113PBF delivers measurable efficiency gain over Schottky diodes in this application.