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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD120

Name: IRFD120
Brand: Vishay Siliconix
SKU: IRFD120
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD120

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD120.pdf

Description:: MOSFET N-CH 100V 1.3A 4DIP

Quantity:: RFQ Add To RFQ list

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Inventory:9,675

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Product details

Overview

IRFD120 from Vishay Siliconix is a 100 V, 1.3 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and 175 °C maximum junction temperature. It delivers fast switching, repetitive avalanche capability, and thermal performance up to 1 W with dual-drain thermal path-used in low-power DC-DC converters and relay drivers.

For engineers reviewing the IRFD120 datasheet, IRFD120 pinout, IRFD120 application, or IRFD120 equivalent, key selection criteria include its 100 V V_DS, 0.27 Ω on-resistance, 16 nC Q_g, HVMDIP through-hole package, and rated operation up to 175 °C junction temperature.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for ruggedness and automatic insertion. Its design supports unclamped inductive switching with 100 mJ single-pulse avalanche energy and 1.3 A repetitive avalanche current, enabling reliable operation in inductive load switching.

The device integrates a body diode with 130–260 ns reverse recovery time and 0.65–1.3 μC Q_rr, and features dynamic dV/dt rating of 5.5 V/ns-critical for noise-immune operation in high-speed switching circuits with inductive transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source voltage, suitable for 24 V and 48 V industrial bus applications.
R_DS(on)	0.27 Ω @ V_GS = 10 V - Enables low conduction loss at 1.3 A continuous current, minimizing heat generation in compact layouts.
Q_g	16 nC - Determines gate drive power requirement; compatible with standard logic-level drivers without external buffering.
T_J(max)	+175 °C - Supports operation in high-ambient environments such as enclosed power supplies or motor control enclosures.
E_AS	100 mJ - Specifies single-pulse avalanche energy handling, allowing safe turn-off under inductive fault conditions.
dV/dt Rating	5.5 V/ns - Ensures immunity to false triggering during rapid voltage transients in noisy industrial settings.
I_D (T_A = 100 °C)	0.94 A - Defines usable continuous current derating at elevated ambient temperatures without heatsinking.

Pinout & Package

The IRFD120 is housed in a 4-pin HVMDIP (High Voltage Mini-DIP) package with dual drain leads for enhanced thermal conduction to the PCB. The case outline conforms to Vishay drawing DWG: 5974, with 0.100" pin pitch and 0.270–0.290" length.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥2.0 V threshold and ≤±20 V absolute max gate-source voltage.
D (Pin 1 & Pin 4)	Drain (dual)	Power input node; both pins electrically connected internally and serve as thermal interface to PCB copper pour.
S	Source	Reference node for gate drive and current return; connects to system ground or low-side switch node.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 1.3 A repetitive avalanche current and 0.13 mJ energy-enables robust overvoltage protection without external snubbers.
Dynamic dV/dt rating	5.5 V/ns immunity ensures stable operation during fast voltage transitions in relay coil or solenoid drive circuits.
End stackable DIP package	HVMDIP mechanical design allows vertical stacking of multiple units on 0.1" grid, optimizing space in automated assembly lines.
Fast switching	6.8 ns turn-on delay + 27 ns rise time enables >1 MHz switching in low-power SMPS designs with minimal overlap loss.
175 °C operating temperature	Enables deployment in sealed enclosures or near heat-generating components without derating penalties beyond datasheet curves.

Applications

Low-Power DC-DC Converters	Electromechanical Relay Drivers
Use Scenario: Step-down conversion in isolated auxiliary supplies for PLC I/O modules or sensor interfaces. IC Role / Device Role / Timing Role: Low-side synchronous rectifier or primary-side switch in flyback/forward topologies operating below 10 W. Use Value: 0.27 Ω R_DS(on) minimizes conduction loss at 1.3 A, while 16 nC Q_g enables efficient gate drive from microcontroller GPIOs.	Use Scenario: Solid-state replacement for mechanical relays controlling HVAC dampers or industrial valves. IC Role / Device Role / Timing Role: Low-side switch driving 24 V DC coils with inductive kick suppression via integrated avalanche capability. Use Value: 100 mJ E_AS absorbs coil energy during turn-off, eliminating need for external flyback diodes in cost-sensitive designs.
LED Constant-Current Drivers	Overvoltage Protection Circuits
Use Scenario: Linear or PWM-controlled current regulation for signage LEDs or indicator banks in industrial panels. IC Role / Device Role / Timing Role: Pass element in adjustable constant-current sink configuration with analog dimming input. Use Value: 175 °C T_J(max) and low R_DS(on) allow direct PCB mounting without heatsink, simplifying thermal management.	Use Scenario: Crowbar or clamp circuit protecting downstream 24 V logic from transient surges in factory automation buses. IC Role / Device Role / Timing Role: Avalanche-active clamping device triggered by overvoltage detection circuitry. Use Value: Repetitive avalanche rating (1.3 A, 0.13 mJ) permits repeated surge absorption without degradation-verified per Fig. 12c.

Low-Power DC-DC Converters

Electromechanical Relay Drivers

Use Scenario: Step-down conversion in isolated auxiliary supplies for PLC I/O modules or sensor interfaces.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier or primary-side switch in flyback/forward topologies operating below 10 W.

Use Value: 0.27 Ω R_DS(on) minimizes conduction loss at 1.3 A, while 16 nC Q_g enables efficient gate drive from microcontroller GPIOs.

Use Scenario: Solid-state replacement for mechanical relays controlling HVAC dampers or industrial valves.

IC Role / Device Role / Timing Role: Low-side switch driving 24 V DC coils with inductive kick suppression via integrated avalanche capability.

Use Value: 100 mJ E_AS absorbs coil energy during turn-off, eliminating need for external flyback diodes in cost-sensitive designs.

LED Constant-Current Drivers

Overvoltage Protection Circuits

Use Scenario: Linear or PWM-controlled current regulation for signage LEDs or indicator banks in industrial panels.

IC Role / Device Role / Timing Role: Pass element in adjustable constant-current sink configuration with analog dimming input.

Use Value: 175 °C T_J(max) and low R_DS(on) allow direct PCB mounting without heatsink, simplifying thermal management.

Use Scenario: Crowbar or clamp circuit protecting downstream 24 V logic from transient surges in factory automation buses.

IC Role / Device Role / Timing Role: Avalanche-active clamping device triggered by overvoltage detection circuitry.

Use Value: Repetitive avalanche rating (1.3 A, 0.13 mJ) permits repeated surge absorption without degradation-verified per Fig. 12c.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFD110	Lower V_DS (100 V same), higher R_DS(on) (0.54 Ω), lower Q_g (11 nC)	Reduced conduction efficiency but faster switching; suited for lower-current (<0.8 A), higher-frequency use cases	Select IRFD110 only when gate drive strength is limited and thermal margin exceeds 50%.
STP1NK60Z	Higher V_DS (600 V), lower I_D (0.25 A), TO-92 package, no avalanche rating	Designed for high-voltage, low-current flyback snubbers-not suitable for inductive load switching or avalanche stress	IRFD120 remains preferred for 24–48 V inductive switching where avalanche ruggedness and thermal dissipation are required.

Compared with IRFD110 and STP1NK60Z, the IRFD120 uniquely balances 100 V rating, 1.3 A current capability, 0.27 Ω on-resistance, and verified repetitive avalanche performance-making it the only option among the three qualified for sustained inductive switching at 175 °C.

Availability

IRFD120 is available at Aetrix Electronics and suitable for low-power DC-DC converters, electromechanical relay drivers, and LED constant-current drivers requiring stable component supply and long-term industrial availability.

Supply support for IRFD120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFD120 belongs to Vishay's third-generation HVMDIP power MOSFET family, engineered for automatic insertion, thermal efficiency, and ruggedness in cost-sensitive, low-to-medium power switching applications.

FAQ

What is the maximum continuous drain current for the IRFD120 at 100 °C ambient temperature?

The IRFD120 supports 0.94 A continuous drain current at T_A = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 1.3 A at 25 °C using the 0.0083 W/°C factor and accounts for thermal resistance to ambient (R_thJA = 120 °C/W). Designers must verify PCB copper area and airflow to maintain this rating in actual layout.

Does the IRFD120 have a built-in body diode, and what are its key parameters?

Yes, the IRFD120 integrates a body diode with typical V_SD = 2.5 V at I_S = 1.3 A and T_J = 25 °C. Its reverse recovery time (t_rr) ranges from 130 to 260 ns, and Q_rr is 0.65–1.3 μC under specified test conditions. These values are critical for evaluating commutation losses in synchronous rectification or freewheeling paths.

Can the IRFD120 be used in avalanche mode for overvoltage protection?

Yes-the IRFD120 is explicitly rated for repetitive avalanche operation with I_AR = 1.3 A and E_AR = 0.13 mJ, and single-pulse avalanche energy of 100 mJ. These ratings are validated per Figure 12 and Note b in the datasheet, making IRFD120 suitable for controlled clamping in relay driver or inductive load circuits without external protection devices.

What is the gate threshold voltage range for the IRFD120, and how does it affect drive compatibility?

The IRFD120 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This confirms compatibility with standard 5 V TTL/CMOS logic and microcontroller GPIOs, though full enhancement requires ≥10 V for minimum R_DS(on). Gate drive circuits must ensure V_GS exceeds 4.0 V to guarantee turn-on across temperature and process variation.

Is the IRFD120 RoHS-compliant and lead-free?

Yes-the ordering variant IRFD120PbF is explicitly designated as lead (Pb)-free per Vishay's material compliance policy (see doc?99912). It meets RoHS Directive 2011/65/EU and is suitable for environmentally regulated industrial and consumer applications requiring halogen-free and Pb-free construction.

IRFD120 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 780mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD120 FAQ

1.How can I place an order for IRFD120 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD120 reliable?

The price and inventory of IRFD120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD120 is usually 5 days.

3.What payment methods are accepted for IRFD120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD120?

IRFD120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD120?

For technical support, including IRFD120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD120 requirements.

6.How does Aetrix verify that IRFD120 is sourced from the original manufacturer or authorized distributors?

All IRFD120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD120 meets industry standards.

7.What is the process for return or replacement of IRFD120?

All IRFD120 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD120 part is unused and in its original packaging.

Return procedure for IRFD120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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