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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD120PBF

Name: IRFD120PBF
Brand: Vishay Siliconix
SKU: IRFD120PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD120PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD120PBF.pdf

Description:: MOSFET N-CH 100V 1.3A 4DIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFD120PBF from Vishay Siliconix is a 100 V, 1.3 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and 175 °C maximum junction temperature - designed for low-power switching in industrial controls and power supplies.

For engineers reviewing the IRFD120PBF datasheet, IRFD120PBF pinout, IRFD120PBF application, or IRFD120PBF equivalent, key selection criteria include its repetitive avalanche rating (1.3 A), fast switching (6.8 ns turn-on delay), dV/dt ruggedness (5.5 V/ns), and thermal performance in through-hole automated assembly environments.

Technical Context

This device is a third-generation planar VDMOS power MOSFET optimized for robustness and ease of paralleling. Its structure supports unclamped inductive switching with 100 mJ single-pulse avalanche energy and features integral body diode with 130–260 ns reverse recovery time and 0.65–1.3 μC Q_rr.

The HVMDIP package provides dual-drain thermal conduction to PCB, enabling 1 W power dissipation at 25 °C ambient. Internal source/drain inductances (L_S = 6.0 nH, L_D = 4.0 nH) are specified for accurate switching waveform modeling in gate-drive design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports DC/DC converters and motor drivers up to 80 V bus with margin
R_DS(on)	0.27 Ω @ V_GS = 10 V - limits conduction loss to ≤ 0.46 W at 1.3 A continuous drain current
Q_g	16 nC - determines gate drive power requirement and switching speed with standard 18 Ω resistor
T_J max	175 °C - enables operation in sealed enclosures or high-ambient industrial environments
E_AS	100 mJ - sustains single-event inductive energy without failure in relay/snubberless designs
dV/dt rating	5.5 V/ns - resists false turn-on during high-slew-rate noise transients in motor control
I_D (T_A = 100 °C)	0.94 A - defines usable current derating for surface-mount-equivalent thermal management on PCB

Pinout & Package

The IRFD120PBF uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package with dual drain leads (D1, D2), single gate (G), and single source (S). Leads are spaced on 0.1" centers; dual drains serve as thermal paths to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
D1, D2	Drain (dual, internally connected)	Primary current path and main thermal interface to PCB; both pins must be soldered for rated power dissipation
G	Gate	Controls channel conduction; requires ≥ 10 V for full enhancement; ±20 V absolute max rating
S	Source	Reference node for gate drive and load return; internal connection to body diode cathode

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under inductive load switching without external snubbers (I_AR = 1.3 A, E_AR = 0.13 mJ)
Dynamic dV/dt rating	5.5 V/ns immunity prevents spurious turn-on in noisy industrial environments
End stackable DIP format	Allows vertical stacking of multiple units on 0.1" pitch headers for compact multi-channel layouts
175 °C operating temperature	Supports extended-life deployment in sealed power modules or high-temperature enclosures
Low Q_gd/Q_g ratio	7.7/16 = 48% - improves Miller immunity and reduces switching instability risk

Applications

Industrial Relay Drivers	Low-Power DC/DC Converters
Use Scenario: Driving 24 V DC coil relays in PLC I/O modules with transient suppression and long-term reliability. IC Role / Device Role / Timing Role: High-side or low-side switch controlling relay coil current with integrated body diode freewheeling. Use Value: Repetitive avalanche rating absorbs inductive kickback without external diodes; 175 °C rating ensures >10-year field life at 70 °C ambient.	Use Scenario: Synchronous rectification or primary-side switch in isolated 5–12 V output flyback converters under 5 W. IC Role / Device Role / Timing Role: Power switch in discontinuous conduction mode (DCM) topology with <100 ns switching transitions. Use Value: Low Q_g (16 nC) and fast t_r/t_f (27/17 ns) minimize switching losses at 100–500 kHz operation.
Motor Control Feedback Circuits	Power Supply Sequencing
Use Scenario: Isolated gate drive enable/disable for BLDC inverter half-bridges in HVAC fan controllers. IC Role / Device Role / Timing Role: Logic-level controlled isolation switch enabling/disabling gate driver supply rails. Use Value: Fast t_d(on) (6.8 ns) and low R_DS(on) ensure precise timing alignment across multi-phase sequencing.	Use Scenario: Controlled power-up sequencing of FPGA core and I/O rails in embedded computing systems. IC Role / Device Role / Timing Role: Load switch managing inrush current and voltage ramp rate between rail domains. Use Value: Body diode V_SD = 2.5 V at 1.3 A enables bidirectional current handling during rail reversal events.

Industrial Relay Drivers

Low-Power DC/DC Converters

Use Scenario: Driving 24 V DC coil relays in PLC I/O modules with transient suppression and long-term reliability.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling relay coil current with integrated body diode freewheeling.

Use Value: Repetitive avalanche rating absorbs inductive kickback without external diodes; 175 °C rating ensures >10-year field life at 70 °C ambient.

Use Scenario: Synchronous rectification or primary-side switch in isolated 5–12 V output flyback converters under 5 W.

IC Role / Device Role / Timing Role: Power switch in discontinuous conduction mode (DCM) topology with <100 ns switching transitions.

Use Value: Low Q_g (16 nC) and fast t_r/t_f (27/17 ns) minimize switching losses at 100–500 kHz operation.

Motor Control Feedback Circuits

Power Supply Sequencing

Use Scenario: Isolated gate drive enable/disable for BLDC inverter half-bridges in HVAC fan controllers.

IC Role / Device Role / Timing Role: Logic-level controlled isolation switch enabling/disabling gate driver supply rails.

Use Value: Fast t_d(on) (6.8 ns) and low R_DS(on) ensure precise timing alignment across multi-phase sequencing.

Use Scenario: Controlled power-up sequencing of FPGA core and I/O rails in embedded computing systems.

IC Role / Device Role / Timing Role: Load switch managing inrush current and voltage ramp rate between rail domains.

Use Value: Body diode V_SD = 2.5 V at 1.3 A enables bidirectional current handling during rail reversal events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, higher R_DS(on) (7.5 Ω), TO-92 package, no avalanche rating	Designed for high-voltage, low-current AC/DC standby circuits - not suitable for 100 V inductive loads	Select only if voltage rating >400 V is required and current <0.5 A; not drop-in for IRFD120PBF
FQP30N06L	60 V V_DS, lower R_DS(on) (0.028 Ω), TO-220, logic-level gate (2.5 V V_GS(th))	Optimized for 5 V MCU-driven low-side switching - insufficient voltage margin for 48 V bus applications	Use where gate drive is 3.3–5 V and V_DS stress <45 V; requires PCB redesign due to TO-220 footprint

Compared with STP1NK60Z and FQP30N06L, the IRFD120PBF uniquely balances 100 V rating, 1.3 A current, avalanche ruggedness, and DIP automation compatibility - making it irreplaceable in legacy industrial control boards requiring through-hole reliability and thermal stacking.

Availability

IRFD120PBF is available at Aetrix Electronics and suitable for industrial relay drivers, low-power DC/DC converters, and motor control feedback circuits requiring stable component supply across extended production lifecycles.

Supply support for IRFD120PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and long-term reliability.

The IRFD120PBF belongs to Vishay's HVMDIP power MOSFET family, engineered specifically for cost-sensitive, high-reliability through-hole applications in industrial automation and power conversion where thermal stacking and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for IRFD120PBF at 100 °C ambient temperature?

The IRFD120PBF supports 0.94 A continuous drain current at T_A = 100 °C, per its linear derating factor of 0.0083 W/°C from 1.3 W at 25 °C. This value assumes adequate PCB copper area for thermal conduction via dual drain leads. Exceeding this current without additional heatsinking risks exceeding the 175 °C maximum junction temperature limit.

Does IRFD120PBF have a specified avalanche energy rating?

Yes, the IRFD120PBF is repetitively avalanche rated with I_AR = 1.3 A and E_AR = 0.13 mJ, and has a single-pulse avalanche energy rating of E_AS = 100 mJ (tested at V_DD = 25 V, L = 22 mH, R_g = 25 Ω, I_AS = 2.6 A). These values are confirmed in the Absolute Maximum Ratings and Avalanche Characteristics sections of the official Vishay datasheet (S21-0885-Rev. D).

What is the gate threshold voltage range for IRFD120PBF?

The IRFD120PBF has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. It is not a logic-level MOSFET; full enhancement requires V_GS ≥ 10 V to achieve the specified R_DS(on) of 0.27 Ω. Drive circuits must supply ≥ 12 V to ensure margin against temperature drift and gate resistance losses.

Can IRFD120PBF be used in parallel configurations?

Yes, the IRFD120PBF is explicitly designed for ease of paralleling, as noted in its Features list. Its positive R_DS(on) temperature coefficient promotes current sharing, and the HVMDIP package allows uniform thermal coupling across multiple units mounted on shared PCB copper. Layout best practices include matched gate trace lengths and individual gate resistors to suppress oscillation.

What is the peak diode recovery dV/dt rating for IRFD120PBF?

The IRFD120PBF has a peak diode recovery dV/dt rating of 5.5 V/ns, measured under conditions of I_SD ≤ 9.2 A, dI/dt ≤ 110 A/μs, V_DD ≤ V_DS, and T_J ≤ 175 °C. This specification ensures immunity to false turn-on during fast body diode commutation in inductive switching applications such as relay driving and flyback snubberless operation.

IRFD120PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 780mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD120PBF FAQ

1.How can I place an order for IRFD120PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD120PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD120PBF reliable?

The price and inventory of IRFD120PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD120PBF is usually 5 days.

3.What payment methods are accepted for IRFD120PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD120PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD120PBF?

IRFD120PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD120PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD120PBF?

For technical support, including IRFD120PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD120PBF requirements.

6.How does Aetrix verify that IRFD120PBF is sourced from the original manufacturer or authorized distributors?

All IRFD120PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD120PBF meets industry standards.

7.What is the process for return or replacement of IRFD120PBF?

All IRFD120PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD120PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD120PBF part is unused and in its original packaging.

Return procedure for IRFD120PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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