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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD123PBF

Name: IRFD123PBF
Brand: Vishay Siliconix
SKU: IRFD123PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD123PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD123PBF.pdf

Description:: MOSFET N-CH 100V 1.3A 4DIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFD123PBF from Vishay Siliconix is a 100 V, 1.3 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and 175 °C maximum junction temperature. It serves as a robust, fast-switching discrete switch in low-power DC-DC converters and relay drivers.

For engineers reviewing the IRFD123PBF datasheet, IRFD123PBF pinout, IRFD123PBF application, or IRFD123PBF equivalent, key selection considerations include its repetitive avalanche rating (1.3 A), peak diode recovery dV/dt capability (5.5 V/ns), thermal performance in through-hole mounting, and suitability for automatic insertion and end-stacking in space-constrained industrial control modules.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for ruggedness and cost-effective machine-insertable solutions. Its dual-drain configuration provides enhanced thermal conduction to the PCB, enabling up to 1 W power dissipation without heatsinking at TA = 25 °C.

The IRFD123PBF integrates a body diode with 130–260 ns reverse recovery time and 0.65–1.3 μC Q_rr, supporting unclamped inductive switching with 100 mJ single-pulse avalanche energy. Its dynamic dV/dt rating and ±20 V gate-source voltage tolerance support reliable operation in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports DC bus voltages up to 80 V with margin for transients in low-voltage industrial systems
R_DS(on)	0.27 Ω @ V_GS = 10 V - enables <1.1 W conduction loss at 2 A drain current in continuous operation
Q_g	16 nC - determines gate drive power requirement and switching speed in PWM circuits with typical 10–18 Ω gate resistors
I_D (cont.)	1.3 A @ T_A = 25 °C - defines maximum steady-state load current without forced airflow or heatsinking
T_J(max)	+175 °C - allows operation in high-ambient environments such as enclosed motor controllers or power supplies
E_AS	100 mJ - quantifies energy-handling capability during inductive turn-off events like solenoid or relay de-energization
dV/dt (peak)	5.5 V/ns - ensures immunity to parasitic turn-on in high-noise switching nodes without external snubbing

Pinout & Package

The IRFD123PBF uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package, with dual drain leads (D1, D2) serving as both current paths and thermal conduction paths to the PCB copper area. Package dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H), 2.54 mm pin pitch.

Pin/Terminal	Circuit Role	Design Meaning
D1, D2	Drain (dual parallel)	Carry main current path and provide low-thermal-resistance path to PCB ground plane for heat dissipation
G	Gate	Controls channel conduction; requires ≤±20 V drive; 4.4 nC Qgs enables fast turn-on with minimal overshoot
S	Source	Reference node for gate drive and load return; internal source inductance LS = 6.0 nH affects switching waveform fidelity

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 1.3 A repetitive avalanche current and 0.13 mJ energy-enables reliable operation in inductive load switching without external clamping
Dynamic dV/dt rating	5.5 V/ns peak diode recovery dV/dt tolerance prevents false turn-on in high-slew-rate environments
175 °C operating temperature	Permits deployment in sealed enclosures or near heat sources where ambient exceeds 100 °C
End stackable & machine-insertable	HVMDIP footprint allows vertical stacking of multiple units on 0.1" grid, reducing board area in multi-channel control boards
Dual drain thermal link	Two drain pins soldered to large copper pour dissipate up to 1 W at TA = 25 °C without heatsink

Applications

Industrial Relay Drivers	Low-Power DC-DC Converters
Use Scenario: Driving 24 V DC electromagnetic relays in PLC I/O modules with frequent on/off cycling. IC Role / Device Role / Timing Role: Discrete power switch controlling relay coil current; handles inductive kickback via integrated avalanche capability. Use Value: Eliminates need for external flyback diode and snubber due to 100 mJ single-pulse avalanche energy and 5.5 V/ns dV/dt rating.	Use Scenario: High-side switch in 5–24 V input, 3.3/5 V output buck converter for microcontroller power domains. IC Role / Device Role / Timing Role: Synchronous rectifier or main switch in low-frequency (<500 kHz) non-isolated DC-DC stages. Use Value: 0.27 Ω R_DS(on) limits conduction loss to <0.7 W at 1.6 A, enabling compact layout with minimal thermal relief.
Motor Control Interface	Power Supply Sequencing
Use Scenario: Enabling/disabling small DC brush motors (e.g., fans, actuators) in HVAC control panels. IC Role / Device Role / Timing Role: Low-side or high-side enable switch providing controlled power-up/down sequencing. Use Value: 175 °C T_J(max) and 1.3 A continuous rating ensure reliability across extended duty cycles in thermally constrained enclosures.	Use Scenario: Power gating for auxiliary rails (e.g., USB, sensors) in embedded systems requiring controlled startup timing. IC Role / Device Role / Timing Role: Load switch managing inrush current and isolation between supply domains. Use Value: Fast switching (6.8 ns t_d(on), 17 ns t_f) and ease of paralleling allow precise timing control without external timing components.

Industrial Relay Drivers

Low-Power DC-DC Converters

Use Scenario: Driving 24 V DC electromagnetic relays in PLC I/O modules with frequent on/off cycling.

IC Role / Device Role / Timing Role: Discrete power switch controlling relay coil current; handles inductive kickback via integrated avalanche capability.

Use Value: Eliminates need for external flyback diode and snubber due to 100 mJ single-pulse avalanche energy and 5.5 V/ns dV/dt rating.

Use Scenario: High-side switch in 5–24 V input, 3.3/5 V output buck converter for microcontroller power domains.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch in low-frequency (<500 kHz) non-isolated DC-DC stages.

Use Value: 0.27 Ω R_DS(on) limits conduction loss to <0.7 W at 1.6 A, enabling compact layout with minimal thermal relief.

Motor Control Interface

Power Supply Sequencing

Use Scenario: Enabling/disabling small DC brush motors (e.g., fans, actuators) in HVAC control panels.

IC Role / Device Role / Timing Role: Low-side or high-side enable switch providing controlled power-up/down sequencing.

Use Value: 175 °C T_J(max) and 1.3 A continuous rating ensure reliability across extended duty cycles in thermally constrained enclosures.

Use Scenario: Power gating for auxiliary rails (e.g., USB, sensors) in embedded systems requiring controlled startup timing.

IC Role / Device Role / Timing Role: Load switch managing inrush current and isolation between supply domains.

Use Value: Fast switching (6.8 ns t_d(on), 17 ns t_f) and ease of paralleling allow precise timing control without external timing components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFD120PBF	Lower V_DS (100 V same), higher R_DS(on) (0.36 Ω), lower Q_g (12 nC)	Reduced conduction loss margin but faster switching in low-current, high-frequency use cases	Select when gate drive strength is limited and average current stays below 1 A
STP1NK60ZFP	Higher V_DS (600 V), much higher R_DS(on) (13 Ω), TO-92 package	Designed for high-voltage, ultra-low-current applications (e.g., signal-level switching), not power switching	Not suitable as direct functional replacement; only consider for voltage-scaling verification in legacy designs

Compared with IRFD123PBF, IRFD120PBF trades conduction efficiency for slightly improved switching speed, while STP1NK60ZFP serves entirely different voltage/current regimes-neither offers pin compatibility or identical thermal behavior, making IRFD123PBF the optimal choice for 100 V, ~1 A industrial switching with thermal and avalanche robustness.

Availability

IRFD123PBF is available at Aetrix Electronics and suitable for industrial relay drivers, low-power DC-DC converters, and motor interface circuits requiring stable component supply, long-term manufacturability, and lead(Pb)-free compliance.

Supply support for IRFD123PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFD series targets cost-sensitive, machine-insertable power switching applications where ruggedness, thermal performance, and ease of assembly are prioritized over ultra-low R_DS(on) or high-frequency optimization.

FAQ

What is the maximum continuous drain current for IRFD123PBF at 100 °C ambient temperature?

The IRFD123PBF supports 0.94 A continuous drain current at T_A = 100 °C, derated from 1.3 A at 25 °C using a linear derating factor of 0.0083 W/°C. This reflects its thermal resistance R_thJA of 120 °C/W and 1.3 W maximum power dissipation at room temperature. Designers must verify PCB copper area and airflow to sustain this rating in real-world layouts.

Does IRFD123PBF have an integrated body diode, and what are its key parameters?

Yes, IRFD123PBF includes an integral body diode rated for 1.3 A continuous forward current and 10 A pulsed current. Its V_SD is 2.5 V at T_J = 25 °C and I_S = 1.3 A, with reverse recovery time trr of 130–260 ns and Q_rr of 0.65–1.3 μC. These values are critical for designing snubberless inductive load circuits and evaluating commutation losses in half-bridge configurations.

Can IRFD123PBF be used in avalanche mode, and what are the limits?

Yes, IRFD123PBF is repetitively avalanche rated: it supports 1.3 A repetitive avalanche current and 0.13 mJ repetitive avalanche energy, with 100 mJ single-pulse capability. Operation in avalanche mode requires limiting pulse width per Figure 11 and ensuring junction temperature remains ≤175 °C. The device is validated for unclamped inductive switching per test conditions in Figure 12.

What is the gate threshold voltage range for IRFD123PBF, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for IRFD123PBF is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range confirms standard-level (not logic-level) gate drive compatibility, requiring ≥10 V V_GS to achieve full R_DS(on) = 0.27 Ω. Gate drive circuits must supply sufficient voltage and current to overcome 16 nC total gate charge within required switching times.

Is IRFD123PBF RoHS-compliant and halogen-free?

Yes, IRFD123PBF is lead(Pb)-free and RoHS-compliant, as indicated by the "PbF" suffix and confirmed in Vishay's material categorization documentation (www.vishay.com/doc?99912). It meets JEDEC JS709B and IEC 61249-2-21 requirements for halogen-free printed wiring boards, with chlorine and bromine content <900 ppm each.

IRFD123PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 780mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD123PBF FAQ

1.How can I place an order for IRFD123PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD123PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD123PBF reliable?

The price and inventory of IRFD123PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD123PBF is usually 5 days.

3.What payment methods are accepted for IRFD123PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD123PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD123PBF?

IRFD123PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD123PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD123PBF?

For technical support, including IRFD123PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD123PBF requirements.

6.How does Aetrix verify that IRFD123PBF is sourced from the original manufacturer or authorized distributors?

All IRFD123PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD123PBF meets industry standards.

7.What is the process for return or replacement of IRFD123PBF?

All IRFD123PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD123PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD123PBF part is unused and in its original packaging.

Return procedure for IRFD123PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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