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Vishay Siliconix IRFD210

Part No.:
IRFD210
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
4-DIP (0.300", 7.62mm)
Datasheet:
AetrixIRFD210.pdf
Description:
MOSFET N-CH 200V 600MA 4DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,859

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Product details

Overview

IRFD210 from Vishay Siliconix is a 200 V, 0.60 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating. It serves as a low-cost, machine-insertable switching device for low-power DC-DC converters, relay drivers, and LED dimming circuits.

For engineers reviewing the IRFD210 datasheet, IRFD210 pinout, IRFD210 application, or IRFD210 equivalent, key selection considerations include its 1 W power dissipation limit, 120 °C/W junction-to-ambient thermal resistance, 79 mJ single-pulse avalanche energy, and compatibility with automatic insertion and end-stacking assembly processes.

Technical Context

The IRFD210 is a third-generation planar VDMOS device optimized for ruggedness and fast switching in low-current, high-voltage applications. Its design includes dynamic dV/dt immunity (5.0 V/ns), integrated body diode with 150–310 ns reverse recovery time, and gate drive simplicity requiring only 10 V for full enhancement.

Thermal performance is constrained by its HVMDIP package: maximum junction temperature is 150 °C, with linear derating of 0.0083 W/°C above 25 °C ambient. The dual-drain configuration provides a thermal path to the PCB, enabling up to 1 W dissipation without heatsinking under natural convection.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - supports operation in 100–160 V DC bus applications with margin
RDS(on) 1.5 Ω @ VGS = 10 V - enables <1 W conduction loss at 0.6 A continuous current
Qg 8.2 nC - allows fast switching with standard 5–10 mA gate drivers
EAS 79 mJ - provides unclamped inductive switching robustness in relay/snubberless designs
TJ Range −55 to +150 °C - qualified for industrial and extended-temperature environments
PD 1.0 W @ TA = 25 °C - defines maximum usable power without forced cooling
dV/dt Rating 5.0 V/ns - ensures noise immunity in high-dV/dt switching nodes

Pinout & Package

The IRFD210 uses the HVMDIP (High Voltage Mini-DIP) package: 4-pin, 0.1" pitch, dual-drain leadframe for thermal conduction to PCB. Overall dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Drain) Main drain connection One of two parallel drain leads; both must be soldered for rated current and thermal performance
Pin 2 (Gate) Control terminal High-impedance MOS gate requiring no steady-state current; driven by TTL/CMOS logic
Pin 3 (Source) Reference node for gate drive and load return Common source node for internal body diode; ties to ground or low-side return path
Pin 4 (Drain) Main drain connection Second drain lead; electrically identical to Pin 1 and required for full 1 W rating

Key Features

Feature Design Value
Repetitive avalanche rated Enables reliable operation under inductive turn-off stress without external snubbers (IAR = 0.60 A, EAR = 0.10 mJ)
Dynamic dV/dt immunity 5.0 V/ns threshold prevents false turn-on in noisy high-speed switching environments
End stackable DIP package Allows vertical stacking of multiple IRFD210 units on same PCB footprint for space-constrained layouts
Low Qgd/Qg ratio 4.5/8.2 ≈ 55% - improves Miller immunity and reduces switching instability during hard commutation
Machine-insertable HVMDIP Supports automated through-hole assembly with standard 0.1" pitch tooling and wave soldering

Applications

LED Dimming Driver Low-Power DC-DC Converter

Use Scenario: PWM-controlled constant-current driver for indicator LEDs and status lighting in industrial panels.

IC Role / Device Role / Timing Role: Low-side switch controlling LED current path with 100–1000 Hz PWM frequency.

Use Value: 1.5 Ω RDS(on) limits I²R loss to <0.54 mW at 0.6 A, enabling compact thermally unmanaged design.

Use Scenario: Synchronous rectifier or main switch in isolated flyback converters delivering ≤1 W output.

IC Role / Device Role / Timing Role: Primary-side switching element operating at ≤200 kHz with 10 V gate drive.

Use Value: 79 mJ EAS absorbs leakage inductance energy during MOSFET turn-off, eliminating need for clamp circuits.

Electromechanical Relay Driver Overvoltage Protection Switch

Use Scenario: Solid-state replacement for coil drivers in automotive and HVAC control modules.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch energizing 12–48 V relay coils with inductive kick suppression.

Use Value: Repetitive avalanche rating handles >10⁵ coil-switching cycles without degradation at 200 V bus voltage.

Use Scenario: Crowbar or series protection switch in 100–150 V DC input rails subject to transient overvoltage events.

IC Role / Device Role / Timing Role: Fast-acting shunt or series disconnect triggered by overvoltage detection circuitry.

Use Value: 5.0 V/ns dV/dt immunity prevents spurious turn-on during fast-rising transients up to 200 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP1NK60Z 600 V VDS, 1 A ID, 11.5 Ω RDS(on), TO-92 package Higher voltage rating but higher on-resistance and lower current; requires PCB layout change due to TO-92 footprint Prefer when 600 V blocking is mandatory and 1 W dissipation is acceptable with larger RDS(on)
FQP27P06 P-channel, −60 V VDS, −27 A ID, 0.065 Ω RDS(on), TO-220 Opposite channel type and polarity; not a functional substitute without circuit redesign Only suitable for high-side switch configurations where P-channel topology is required

Compared with STP1NK60Z and FQP27P06, the IRFD210 offers optimal balance of 200 V rating, 1.5 Ω on-resistance, and HVMDIP manufacturability for low-power, high-reliability through-hole switching-without requiring layout changes or gate polarity inversion.

Availability

IRFD210 is available at Aetrix Electronics and suitable for LED dimming drivers, low-power DC-DC converters, and electromechanical relay drivers requiring stable component supply across industrial OEM production programs.

Supply support for IRFD210 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedized packaging.

The IRFD210 belongs to Vishay's third-generation HVMDIP power MOSFET family, engineered for cost-sensitive, low-power industrial controls where automatic insertion, thermal stacking, and unclamped inductive switching resilience are critical.

FAQ

What is the maximum continuous drain current for the IRFD210 at 100 °C ambient temperature?

The IRFD210 supports 0.38 A continuous drain current at TA = 100 °C, derived from its 0.60 A rating at 25 °C and linear derating factor of 0.0083 W/°C. This reflects real-world thermal limits in enclosed enclosures without forced airflow. The IRFD210 must be mounted with both drain pins soldered to maximize heat transfer to the PCB for this rating to apply.

Does the IRFD210 have an integrated body diode, and what are its key parameters?

Yes, the IRFD210 includes an integral body diode rated for 0.60 A continuous forward current and 4.8 A pulsed current. Its VSD is 2.0 V at IS = 0.60 A and TJ = 25 °C, with reverse recovery time (trr) between 150 ns and 310 ns depending on test conditions. These values are confirmed in the official Vishay datasheet (S21-0885-Rev. D) for the IRFD210.

Can the IRFD210 be used in avalanche mode, and what are its energy limits?

The IRFD210 is explicitly rated for repetitive avalanche operation: IAR = 0.60 A and EAR = 0.10 mJ per pulse. It also supports single-pulse avalanche with EAS = 79 mJ under defined conditions (VDD = 50 V, L = 82 mH, Rg = 25 Ω). These ratings are validated per Vishay's test methodology and apply directly to the IRFD210 without derating.

What is the gate threshold voltage range for the IRFD210, and how does it affect drive requirements?

The IRFD210 has a gate-source threshold voltage (VGS(th)) ranging from 2.0 V to 4.0 V at ID = 250 μA. This confirms compatibility with standard 5 V TTL and 3.3 V CMOS logic outputs, though full enhancement (RDS(on) ≤ 1.5 Ω) requires VGS ≥ 10 V. The IRFD210 does not qualify as a "logic-level" MOSFET, so gate drive must supply ≥10 V for specified on-resistance.

Is the IRFD210 RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, the IRFD210PbF variant is lead (Pb)-free and RoHS-compliant, as confirmed by Vishay's material categorization documentation (www.vishay.com/doc?99912). The 'PbF' suffix in the ordering part number IRFD210PbF explicitly denotes lead-free termination and compliance with EU RoHS Directive 2011/65/EU. All IRFD210 units supplied by Aetrix Electronics carry this PbF designation.

IRFD210 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
4-DIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
4-HVMDIP

IRFD210 FAQ

1.How can I place an order for IRFD210 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD210 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD210 reliable?

The price and inventory of IRFD210 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD210 is usually 5 days.

3.What payment methods are accepted for IRFD210?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD210 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD210?

IRFD210 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD210 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD210?

For technical support, including IRFD210 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD210 requirements.

6.How does Aetrix verify that IRFD210 is sourced from the original manufacturer or authorized distributors?

All IRFD210 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD210 meets industry standards.

7.What is the process for return or replacement of IRFD210?

All IRFD210 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD210, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD210 part is unused and in its original packaging.

Return procedure for IRFD210:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFD210 Tags

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