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Vishay Siliconix IRFD210PBF
- Part No.:
- IRFD210PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD210PBF.pdf
- Description:
- MOSFET N-CH 200V 600MA 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,751
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Product details
Overview
IRFD210PBF from Vishay Siliconix is a 200 V, 0.60 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating. It serves as a low-cost, machine-insertable switching device in low-power DC-DC converters, relay drivers, and LED dimming circuits.
For engineers reviewing the IRFD210PBF datasheet, IRFD210PBF pinout, IRFD210PBF application, or IRFD210PBF equivalent, key selection criteria include its 200 V drain-source breakdown voltage, 1.5 Ω on-resistance at 10 V gate drive, 120 °C/W junction-to-ambient thermal resistance, 79 mJ single-pulse avalanche energy, and compatibility with automatic insertion and stackable PCB layouts.
Technical Context
This third-generation power MOSFET employs planar V-groove technology to achieve ruggedized avalanche performance and stable threshold voltage over temperature. Its internal body diode supports unclamped inductive switching with 150–310 ns reverse recovery time and 0.60–1.4 μC Qrr.
The HVMDIP package integrates dual drain leads for enhanced thermal conduction to the PCB, enabling 1.0 W continuous power dissipation at 25 °C ambient. Gate drive is simplified by low 8.2 nC Qg and ±20 V VGS rating, supporting standard logic-level and microcontroller-compatible control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Withstands up to 200 V drain-source voltage before breakdown, suitable for 120 VAC line-derived supplies and flyback snubbers. |
| RDS(on) | 1.5 Ω @ VGS = 10 V - Delivers ≤0.32 W conduction loss at 0.60 A ID, enabling thermally constrained designs without heatsinking. |
| Qg | 8.2 nC - Enables fast turn-on/off with minimal gate driver current demand; compatible with low-power MCU GPIOs via series resistor. |
| EAS | 79 mJ - Supports reliable operation in unclamped inductive switching (e.g., solenoid/relay driving) without external clamping. |
| RthJA | 120 °C/W - Limits junction temperature rise to ≤120 °C above ambient at 1.0 W dissipation, defining safe continuous operation in still air. |
| ID (TA = 100 °C) | 0.38 A - Specifies derated continuous current capability at elevated board temperatures, critical for enclosed industrial enclosures. |
| VGS(th) | 2.0–4.0 V - Ensures robust turn-on margin above TTL/CMOS logic thresholds while avoiding spurious conduction near ground. |
Pinout & Package
The IRFD210PBF uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package: 10.79 mm × 8.38 mm × 7.36 mm (L × W × H), with 2.54 mm pin pitch and dual drain leads for thermal and current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current path from drain terminal | One of two parallel drain connections; soldered to copper pour for thermal conduction and current handling. |
| Pin 2 (Gate) | Control electrode for channel formation | High-impedance input requiring <100 nA leakage current; sensitive to ESD but tolerant of ±20 V transients. |
| Pin 3 (Source) | Reference node for gate drive and current return | Common source connection; ties to ground plane and defines local reference for VGS measurement. |
| Pin 4 (Drain) | Main current path from drain terminal | Second drain lead-electrically identical to Pin 1; used jointly to reduce lead inductance and improve thermal coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under repeated inductive turn-off stress (IAR = 0.60 A, EAR = 0.10 mJ), eliminating need for external snubbers in many relay/solenoid drivers. |
| Dynamic dV/dt rating | 5.0 V/ns peak diode recovery dV/dt tolerance prevents false turn-on during fast voltage transients in high-noise environments. |
| End stackable & machine-insertable | HVMDIP footprint allows vertical stacking on 0.1" grid PCBs and compatibility with automated through-hole insertion equipment. |
| Low Qgd/Qgs ratio | 4.5 nC / 1.8 nC = 2.5 - Reduces Miller effect, improving switching stability and reducing gate oscillation risk in high-speed PWM applications. |
| Body diode with defined Qrr | 0.60–1.4 μC reverse recovery charge enables predictable timing in synchronous rectifier or freewheeling paths without external Schottky replacement. |
Applications
| Relay Driver Circuit | Low-Power DC-DC Converter |
|---|---|
Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules with 5 V or 3.3 V microcontroller outputs. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; operates in linear and saturated regions during pull-in and hold phases. Use Value: Repetitive avalanche rating absorbs coil flyback energy without clamp diodes; 1.5 Ω RDS(on) ensures ≤0.54 W loss at 0.6 A hold current. |
Use Scenario: Primary-side switch in isolated 5 W offline flyback converter powering sensor nodes or IoT peripherals. IC Role / Device Role / Timing Role: High-voltage switching element in discontinuous conduction mode (DCM), operating at ≤100 kHz with 200 V blocking. Use Value: 200 V VDS accommodates reflected output voltage plus margin; 79 mJ EAS handles leakage inductance spikes without failure. |
| LED Dimming Module | Thermal Protection Switch |
Use Scenario: Constant-current PWM dimming stage for 12 V LED strips in architectural lighting systems. IC Role / Device Role / Timing Role: Low-side PWM switch modulating average LED current; duty cycle controlled by MCU timer output. Use Value: Fast 8.2 ns rise/fall times support >5 kHz PWM without visible flicker; low Qg minimizes gate drive power in battery-powered units. |
Use Scenario: Overtemperature cutoff switch in motor driver PCBs, disconnecting power when heatsink exceeds 100 °C. IC Role / Device Role / Timing Role: Thermally triggered latch-off switch using external NTC and comparator; IRFD210PBF acts as fail-safe power gate. Use Value: 150 °C max TJ rating allows direct mounting near thermal sensors; 0.38 A ID @ 100 °C ambient sustains load during fault condition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V VDS, 1.2 A ID, 13 Ω RDS(on), TO-92 package | Higher voltage rating but higher on-resistance and lower current; unsuitable for 200 V bus but usable in universal-input SMPS front-end. | Select only if system requires >400 V blocking and can tolerate higher conduction loss. |
| IRF510PBF | 100 V VDS, 5.7 A ID, 0.54 Ω RDS(on), TO-220 package | Lower voltage rating limits use to ≤60 V DC systems; higher current and lower RDS(on) benefit high-efficiency low-voltage switching. | Prefer for 12–48 V applications where thermal headroom and current capacity outweigh voltage margin needs. |
Compared with STP1NK60ZFP and IRF510PBF, the IRFD210PBF uniquely balances 200 V capability, DIP-mounting, and 1.5 Ω on-resistance in a cost-sensitive, space-constrained through-hole format-making it optimal for legacy industrial controls and low-volume prototyping where TO-220 or SMD assembly is impractical.
Availability
IRFD210PBF is available at Aetrix Electronics and suitable for relay drivers, low-power AC-DC adapters, and LED dimming modules requiring stable component supply, long-lifecycle support, and RoHS-compliant through-hole packaging.
Supply support for IRFD210PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.
The IRFD210PBF belongs to Vishay's third-generation HVMDIP power MOSFET family, engineered for cost-sensitive, thermally constrained industrial controls where automatic insertion, stackability, and avalanche robustness are mandatory design requirements.
FAQ
What is the maximum continuous drain current for IRFD210PBF at 100 °C ambient temperature?
The IRFD210PBF supports 0.38 A continuous drain current at TA = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the HVMDIP package's 120 °C/W RthJA; exceeding this current risks junction temperature exceeding 150 °C even with moderate PCB copper area.
Does IRFD210PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFD210PBF integrates a parasitic body diode with typical forward voltage VSD = 2.0 V at IS = 0.60 A and TJ = 25 °C. Its reverse recovery time trr is 150–310 ns, and reverse recovery charge Qrr is 0.60–1.4 μC-values critical for predicting switching losses in freewheeling or synchronous rectifier configurations.
Can IRFD210PBF be used in avalanche mode, and what are the limits?
Yes, the IRFD210PBF is explicitly rated for repetitive avalanche operation: IAR = 0.60 A and EAR = 0.10 mJ per pulse. Single-pulse avalanche energy is 79 mJ (tested at VDD = 50 V, L = 82 mH). Operation beyond these limits risks parametric shift or catastrophic failure, especially at elevated junction temperatures.
What is the gate threshold voltage range for IRFD210PBF, and how does it affect drive compatibility?
The IRFD210PBF has a VGS(th) range of 2.0 V to 4.0 V at ID = 250 μA. This ensures reliable turn-on with 3.3 V or 5 V logic-level drivers while preventing accidental conduction from noise or floating gate conditions-critical in noisy industrial environments where gate drive margins must be preserved.
Is IRFD210PBF lead (Pb)-free and RoHS compliant?
Yes, IRFD210PBF is lead-free and RoHS compliant, as confirmed by the "PbF" suffix in the part number and Vishay's material categorization documentation (www.vishay.com/doc?99912). The device meets EU RoHS Directive 2011/65/EU and is suitable for environmentally regulated industrial and consumer applications.
IRFD210PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 360mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD210PBF FAQ
1.How can I place an order for IRFD210PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD210PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD210PBF reliable?
The price and inventory of IRFD210PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD210PBF is usually 5 days.
3.What payment methods are accepted for IRFD210PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD210PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD210PBF?
IRFD210PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD210PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD210PBF?
For technical support, including IRFD210PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD210PBF requirements.
6.How does Aetrix verify that IRFD210PBF is sourced from the original manufacturer or authorized distributors?
All IRFD210PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD210PBF meets industry standards.
7.What is the process for return or replacement of IRFD210PBF?
All IRFD210PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD210PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD210PBF part is unused and in its original packaging.
Return procedure for IRFD210PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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