Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFD214PBF

Part No.:
IRFD214PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
4-DIP (0.300", 7.62mm)
Datasheet:
AetrixIRFD214PBF.pdf
Description:
MOSFET N-CH 250V 450MA 4DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,349

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFD214PBF from Vishay Siliconix is a 250 V, 0.45 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for low-power switching in AC-DC auxiliary supplies, relay drivers, and solid-state load switches.

For engineers reviewing the IRFD214PBF datasheet, IRFD214PBF pinout, IRFD214PBF application, or IRFD214PBF equivalent, key selection criteria include its 1 W power dissipation capability, dual-drain thermal path, fast 7.0 ns turn-on delay, and ±20 V gate-source voltage tolerance in through-hole automated assembly environments.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for ruggedness and ease of paralleling. It supports unclamped inductive switching with 57 mJ single-pulse avalanche energy and operates reliably from −55 °C to +150 °C junction temperature.

The device integrates a body diode with 190–390 ns reverse recovery time and 0.64–1.3 μC Qrr, enabling moderate-speed freewheeling in flyback and buck-derived topologies where synchronous rectification is not required.

Key Specifications

ParameterValue and Actual Design Meaning
VDS250 V - supports input voltages up to 170 VAC RMS or 200 VDC bus in auxiliary power stages
RDS(on)2.0 Ω max at VGS = 10 V - delivers ≤0.41 W conduction loss at 0.45 A continuous drain current
Qg8.2 nC - enables efficient 100 kHz–500 kHz switching with standard CMOS gate drivers
ID (cont)0.45 A at TA = 25 °C - suitable for sub-watt control loads without heatsinking
EAS57 mJ - withstands unclamped inductive energy transients in relay coil or solenoid drive
RthJA120 °C/W - limits junction rise to ~120 °C at 1 W dissipation in still air, confirming no forced cooling needed

Pinout & Package

HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual-drain leads (pins 1 & 4) serving as thermal and electrical connection points; case material is thermoset plastic with internal copper leadframe.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Drain)Main drain terminalElectrically and thermally connected to die drain; used with Pin 4 for parallel current sharing and enhanced heat transfer to PCB copper
Pin 2 (Gate)Control electrodeReceives logic-level or 10 V gate drive; ±20 V absolute rating allows robust noise margin in industrial environments
Pin 3 (Source)Reference nodeServes as return path for load current and gate drive reference; internal source inductance LS = 6.0 nH affects high-dI/dt ringing
Pin 4 (Drain)Main drain terminalIdentical function and connection to Pin 1; dual-drain configuration reduces effective RDS(on) parasitic and improves thermal spreading

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables reliable operation under inductive turn-off stress without external snubbers in relay/solenoid drivers
Dynamic dV/dt rating4.8 V/ns minimum ensures immunity to false turn-on during high-slew-rate voltage transients
End stackable DIP formatAllows vertical stacking of multiple units on same PCB footprint for space-constrained control boards
Low Qgd/Qg ratio4.5/8.2 ≈ 55% - reduces Miller-induced switching instability and improves controllability at high dV/dt
Simple drive requirementsThreshold voltage 2.0–4.0 V enables direct drive from microcontroller GPIO or optocoupler outputs

Applications

AC-DC Auxiliary Power SupplyElectromechanical Relay Driver

Use Scenario: Providing isolated 5–12 V bias power for PWM controllers and gate drivers in offline SMPS.

IC Role / Device Role / Timing Role: Primary-side switch in low-power flyback converter operating at 60–100 kHz.

Use Value: 250 V VDS rating safely handles reflected output voltage plus leakage spikes; 1 W PD suffices for <100 mW auxiliary output.

Use Scenario: Driving 12–24 V DC coils of industrial control relays with microcontroller I/O.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current with fast turn-off to suppress back-EMF.

Use Value: Repetitive avalanche rating absorbs coil energy without external diode; 0.45 A ID supports typical 20–40 mA coil currents with margin.

Solid-State Load SwitchLow-Power DC Motor Starter

Use Scenario: Replacing mechanical switches in battery-powered instrumentation for remote load enable/disable.

IC Role / Device Role / Timing Role: High-side or low-side ON/OFF controller for 3–24 V DC loads up to 400 mA.

Use Value: 2.0 Ω RDS(on) limits voltage drop to <1 V at full load; Pb-free HVMDIP meets RoHS-compliant board assembly requirements.

Use Scenario: Starting small brushed DC motors (e.g., fans, actuators) in embedded systems with soft-start sequencing.

IC Role / Device Role / Timing Role: Inrush-limited power switch using PWM-controlled gate ramp to limit peak current.

Use Value: Fast 7.6 ns rise time and 7.0 ns fall time support precise PWM duty cycle control; body diode handles motor back-EMF during off-time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP1NK60ZFP600 V VDS, 1 A ID, TO-92 package, higher RDS(on) (7.5 Ω), no avalanche ratingHigher voltage headroom but lower current and no ruggedized transient handlingSelect when >250 V blocking is required and avalanche immunity is not critical
IRFL4310TRPBF100 V VDS, 1.4 A ID, SOT-223, 0.25 Ω RDS(on), surface-mount onlyLower voltage rating but superior conduction efficiency and thermal performance in compact layoutsSelect for higher-current, lower-voltage DC-DC or motor control where PCB space is constrained

Compared with STP1NK60ZFP and IRFL4310TRPBF, the IRFD214PBF uniquely balances 250 V capability, through-hole manufacturability, and built-in avalanche ruggedness-making it optimal for cost-sensitive, reliability-critical auxiliary power and electromechanical interface circuits where leaded assembly and transient resilience are mandatory.

Availability

IRFD214PBF is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, relay drivers, and solid-state load switches requiring stable component supply across long-lifecycle industrial and instrumentation programs.

Supply support for IRFD214PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-voltage, and ruggedized power devices.

The IRFD series targets cost-effective, machine-insertable power switching solutions for auxiliary and interface functions in industrial controls, power supplies, and appliance electronics-prioritizing ease of assembly, thermal robustness, and transient survivability over ultra-low RDS(on).

FAQ

What is the maximum continuous drain current for IRFD214PBF at 100 °C ambient temperature?

The IRFD214PBF supports 0.29 A continuous drain current at TA = 100 °C, derated linearly from 0.45 A at 25 °C using the specified 0.0083 W/°C factor. This reflects thermal limitations of the HVMDIP package in still air, not device degradation. The IRFD214PBF maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does IRFD214PBF require a gate resistor for basic switching operation?

A gate resistor is recommended for the IRFD214PBF to control dI/dt and suppress ringing caused by its 6.0 nH internal source inductance and PCB layout parasitics. While not strictly required for DC on/off, a 10–25 Ω resistor optimizes switching speed and EMI in typical 100 kHz applications. The IRFD214PBF's 8.2 nC Qg makes it compatible with standard logic drivers without external amplification.

Can IRFD214PBF be used in place of a mechanical switch for 24 V DC loads?

Yes-the IRFD214PBF is routinely deployed as a solid-state replacement for SPST mechanical switches driving 24 V DC resistive or inductive loads up to 0.45 A. Its 250 V VDS, avalanche rating, and 2.0 Ω RDS(on) ensure reliable make/break operation with no contact wear or arcing. The IRFD214PBF's dual-drain thermal path further enhances longevity in repeated switching cycles.

Is IRFD214PBF suitable for use in automotive applications?

The IRFD214PBF is not AEC-Q101 qualified and lacks automotive-specific qualification data such as HTOL or ESD testing per ISO 10605. While its −55 °C to +150 °C operating range covers most under-hood temperatures, Vishay does not endorse the IRFD214PBF for safety-critical or mission-critical automotive functions. For automotive use, consult Vishay's AEC-Q101-qualified alternatives like SQ-series MOSFETs.

What is the body diode forward voltage of IRFD214PBF at rated current?

The IRFD214PBF body diode exhibits a typical forward voltage of 2.0 V at IS = 0.45 A and TJ = 25 °C with VGS = 0 V. This value increases with junction temperature and current-reaching ~2.5 V at 125 °C. The IRFD214PBF's body diode is intended for freewheeling, not primary conduction, and its 190–390 ns trr suits moderate-frequency operation.

IRFD214PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
4-DIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
4-HVMDIP

IRFD214PBF FAQ

1.How can I place an order for IRFD214PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD214PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD214PBF reliable?

The price and inventory of IRFD214PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD214PBF is usually 5 days.

3.What payment methods are accepted for IRFD214PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD214PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD214PBF?

IRFD214PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD214PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD214PBF?

For technical support, including IRFD214PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD214PBF requirements.

6.How does Aetrix verify that IRFD214PBF is sourced from the original manufacturer or authorized distributors?

All IRFD214PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD214PBF meets industry standards.

7.What is the process for return or replacement of IRFD214PBF?

All IRFD214PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD214PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD214PBF part is unused and in its original packaging.

Return procedure for IRFD214PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFD214PBF Tags

  • IRFD214PBF
  • IRFD214PBF PDF
  • IRFD214PBF Datasheet
  • IRFD214PBF Specifications
  • IRFD214PBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFD214PBF
  • Buy IRFD214PBF
  • IRFD214PBF Price
  • IRFD214PBF Distributor
  • IRFD214PBF Supplier
  • IRFD214PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER