Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD220

Name: IRFD220
Brand: Vishay Siliconix
SKU: IRFD220
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFD220

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD220.pdf

Description:: MOSFET N-CH 200V 800MA 4DIP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,463

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFD220 from Vishay Siliconix is a 200 V, 0.80 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.80 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating up to 5.2 A - designed for low-power switching in industrial control, relay drivers, and DC-DC converter primary-side switches.

For engineers reviewing the IRFD220 datasheet, IRFD220 pinout, IRFD220 application, or IRFD220 equivalent, key selection criteria include its 200 V V_DS, 1.0 W P_D at T_A = 25 °C, fast 7.2 ns turn-on delay, 150–300 ns body diode reverse recovery time, and HVMDIP through-hole compatibility with automatic insertion and end-stacking.

Technical Context

The IRFD220 is a third-generation planar VDMOS device optimized for ruggedness and ease of use in low-current, medium-voltage switching. Its design includes dynamic dV/dt immunity (5.0 V/ns), intrinsic body diode with 1.8 V forward drop at 0.80 A, and thermal resistance R_thJA = 120 °C/W enabling operation up to +150 °C junction temperature.

It supports unclamped inductive switching with single-pulse avalanche energy of 260 mJ and repetitive avalanche current of 5.2 A. Gate drive requires only 10 V for full enhancement, with low 3.0 nC Q_gs and simple TTL/CMOS-compatible interface - no bootstrap or level-shifting circuitry needed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports DC bus voltages up to 160 V with margin for transients in industrial power supplies.
R_DS(on)	0.80 Ω @ V_GS = 10 V - enables <1 W conduction loss at 0.80 A continuous drain current.
Q_g	14 nC - determines gate driver current requirement (~1.4 mA avg. for 1 MHz switching).
I_D (continuous)	0.80 A @ T_A = 25 °C - suitable for low-power load switching and signal-level power control.
E_AS	260 mJ - allows safe operation under unclamped inductive turn-off without external snubbers.
trr / Q_rr	150–300 ns / 0.91–1.8 μC - defines body diode recovery behavior in synchronous or freewheeling configurations.
R_thJA	120 °C/W - sets thermal derating slope (0.0083 W/°C) for ambient-limited designs.

Pinout & Package

The IRFD220 is housed in the HVMDIP (High Voltage Mini-DIP) package - a 4-pin, through-hole, machine-insertable case with dual drain leads serving as thermal paths to the PCB. Dimensions: 7.87–8.38 mm (L) × 7.62–10.79 mm (W) × 6.86–7.36 mm (H), 0.100" pin pitch.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D1, D2)	Power output terminal (dual parallel pins)	Provides low-inductance, high-current path and enhanced thermal coupling to PCB copper pour.
Source (S)	Reference node for gate drive and current return	Connected to ground or low-side return; forms body diode anode with drain.
Gate (G)	Control input for channel conduction	Requires ≤ ±20 V drive; 3.0 nC Q_gs enables direct microcontroller interfacing.

Key Features

Feature	Design Value
Repetitive avalanche rated	5.2 A I_AR and 0.10 mJ E_AR - enables reliable operation in inductive load switching without external protection.
Dynamic dV/dt immunity	5.0 V/ns - suppresses false turn-on during high-slew-rate voltage transients in motor drives or SMPS.
End stackable HVMDIP	Standard 0.1" pin spacing and low-profile footprint - supports automated assembly and dense board layouts.
Fast switching	7.2 ns t_d(on), 22 ns t_r, 19 ns t_d(off), 13 ns t_f - reduces switching losses in 100–500 kHz applications.
Low gate charge	14 nC Q_g with 3.0 nC Q_gs - minimizes driver power and simplifies gate drive design for low-cost controllers.

Applications

Industrial Relay Drivers	Low-Power DC-DC Converters
Use Scenario: Replacing electromechanical relays in PLC I/O modules and sensor interface cards where solid-state reliability and >1 M cycle lifetime are required. IC Role / Device Role / Timing Role: Low-side switch controlling coil current of 24 V DC relays with 50–200 mA hold current. Use Value: Eliminates contact bounce and wear; IRFD220's 0.80 Ω R_DS(on) limits coil dissipation to <100 mW at 0.4 A, avoiding heatsinking.	Use Scenario: Primary-side switch in isolated flyback converters delivering <5 W output for auxiliary rails in telecom or industrial equipment. IC Role / Device Role / Timing Role: Medium-voltage, low-duty-cycle power switch operating at 200–300 kHz with unclamped inductive turn-off. Use Value: 260 mJ E_AS absorbs leakage inductance energy; 200 V rating accommodates reflected output voltage plus margin.
Thermal Management Circuits	LED Dimming Interfaces
Use Scenario: Driving thermoelectric coolers (TECs) or small resistive heaters in closed-loop temperature control systems with PWM modulation. IC Role / Device Role / Timing Role: Low-frequency (<10 kHz) power switch modulating average heater power via duty cycle. Use Value: Repetitive avalanche rating ensures robustness against TEC inductive kickback; 150 °C max T_J supports operation in sealed enclosures.	Use Scenario: Constant-current LED string switching in architectural lighting controls and signage where dimming resolution and EMI are critical. IC Role / Device Role / Timing Role: High-side or low-side PWM switch controlling LED current in 10–100 kHz range. Use Value: Fast 13 ns fall time minimizes transition losses; low 30 pF C_rss reduces EMI generation during switching edges.

Industrial Relay Drivers

Low-Power DC-DC Converters

Use Scenario: Replacing electromechanical relays in PLC I/O modules and sensor interface cards where solid-state reliability and >1 M cycle lifetime are required.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current of 24 V DC relays with 50–200 mA hold current.

Use Value: Eliminates contact bounce and wear; IRFD220's 0.80 Ω R_DS(on) limits coil dissipation to <100 mW at 0.4 A, avoiding heatsinking.

Use Scenario: Primary-side switch in isolated flyback converters delivering <5 W output for auxiliary rails in telecom or industrial equipment.

IC Role / Device Role / Timing Role: Medium-voltage, low-duty-cycle power switch operating at 200–300 kHz with unclamped inductive turn-off.

Use Value: 260 mJ E_AS absorbs leakage inductance energy; 200 V rating accommodates reflected output voltage plus margin.

Thermal Management Circuits

LED Dimming Interfaces

Use Scenario: Driving thermoelectric coolers (TECs) or small resistive heaters in closed-loop temperature control systems with PWM modulation.

IC Role / Device Role / Timing Role: Low-frequency (<10 kHz) power switch modulating average heater power via duty cycle.

Use Value: Repetitive avalanche rating ensures robustness against TEC inductive kickback; 150 °C max T_J supports operation in sealed enclosures.

Use Scenario: Constant-current LED string switching in architectural lighting controls and signage where dimming resolution and EMI are critical.

IC Role / Device Role / Timing Role: High-side or low-side PWM switch controlling LED current in 10–100 kHz range.

Use Value: Fast 13 ns fall time minimizes transition losses; low 30 pF C_rss reduces EMI generation during switching edges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, 1 A I_D, 11 Ω R_DS(on) - higher voltage rating but significantly higher on-resistance.	Better for 400 V+ AC line applications; unsuitable for low-loss 24–48 V DC switching due to conduction loss.	Select STP1NK60Z only when >400 V blocking is mandatory; IRFD220 preferred for <200 V systems requiring efficiency.
IRF510	100 V V_DS, 5.6 A I_D, 0.54 Ω R_DS(on) - lower voltage, higher current, lower R_DS(on).	Optimized for 12–24 V loads; lacks IRFD220's 200 V rating and avalanche capability.	Choose IRF510 for higher-current, lower-voltage DC applications; IRFD220 remains optimal for 200 V-rated, low-I_D ruggedness-critical uses.

Compared with STP1NK60Z and IRF510, the IRFD220 uniquely balances 200 V blocking, 0.80 Ω conduction, and 260 mJ avalanche energy in a compact HVMDIP package - making it the most suitable choice for medium-voltage, low-power industrial switching where reliability under transient stress is essential.

Availability

IRFD220 is available at Aetrix Electronics and suitable for industrial relay drivers, low-power DC-DC converters, and thermal management circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFD220 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.

The IRFD220 belongs to Vishay's HVMDIP power MOSFET family, engineered for cost-sensitive, medium-voltage industrial control applications demanding automatic insertion, thermal performance, and transient robustness - not general-purpose logic-level switching.

FAQ

What is the maximum continuous drain current for the IRFD220 at 100 °C ambient temperature?

The IRFD220 supports 0.50 A continuous drain current at T_A = 100 °C, derived from its 0.80 A rating at 25 °C and linear derating factor of 0.0083 W/°C. This reflects thermal limitation of its 1.0 W P_D rating and 120 °C/W R_thJA. At elevated ambient, PCB copper area and airflow become critical to maintain safe junction temperature below 150 °C. The IRFD220 datasheet confirms this value in Absolute Maximum Ratings Table.

Does the IRFD220 have a built-in body diode, and what are its key parameters?

Yes, the IRFD220 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 0.80 A continuous source-drain current, 6.4 A pulsed rating, 1.8 V forward voltage at 0.80 A and 25 °C, and 150–300 ns reverse recovery time with 0.91–1.8 μC Q_rr. These values are measured per the IRFD220 datasheet's Drain-Source Body Diode Characteristics table and define its freewheeling capability in inductive circuits.

Can the IRFD220 be used in avalanche mode, and what energy level is rated?

Yes, the IRFD220 is explicitly rated for repetitive avalanche operation with 5.2 A I_AR and 0.10 mJ E_AR, and single-pulse avalanche energy of 260 mJ under specified test conditions (V_DD = 50 V, L = 152 mH, R_g = 25 Ω). This capability is confirmed in the Absolute Maximum Ratings table and Fig. 12c of the IRFD220 datasheet, enabling robustness in unclamped inductive switching without external snubbers.

What is the gate threshold voltage range for the IRFD220, and how does it affect drive requirements?

The IRFD220 has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 μA, per its Specifications table. This means full enhancement occurs reliably above 10 V, while logic-level drive (e.g., 5 V) yields partial conduction. Its 3.0 nC Q_gs and 14 nC Q_g enable direct drive from microcontrollers or gate drivers without buffering - a key advantage confirmed in the IRFD220's Features and Switching Characteristics sections.

Is the IRFD220 compatible with lead-free soldering processes, and what is the peak temperature limit?

Yes, the IRFD220PbF variant is lead (Pb)-free and qualified for lead-free soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. This aligns with IPC-J-STD-020 moisture sensitivity level (MSL) requirements for through-hole components. The IRFD220's HVMDIP package construction and internal die attach are validated for this thermal profile, ensuring reliability in modern reflow and wave soldering processes.

IRFD220 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 480mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD220 FAQ

1.How can I place an order for IRFD220 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD220 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD220 reliable?

The price and inventory of IRFD220 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD220 is usually 5 days.

3.What payment methods are accepted for IRFD220?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD220 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD220?

IRFD220 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD220 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD220?

For technical support, including IRFD220 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD220 requirements.

6.How does Aetrix verify that IRFD220 is sourced from the original manufacturer or authorized distributors?

All IRFD220 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD220 meets industry standards.

7.What is the process for return or replacement of IRFD220?

All IRFD220 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD220, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD220 part is unused and in its original packaging.

Return procedure for IRFD220:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …