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Vishay Siliconix IRFD220PBF
- Part No.:
- IRFD220PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD220PBF.pdf
- Description:
- MOSFET N-CH 200V 800MA 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:9,479
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Product details
Overview
IRFD220PBF from Vishay Siliconix is a 200 V, 0.80 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating up to 5.2 A - designed for low-power switching in industrial control, relay drivers, and LED dimming circuits.
For engineers reviewing the IRFD220PBF datasheet, IRFD220PBF pinout, IRFD220PBF application, or IRFD220PBF equivalent, key selection criteria include its 1 W ambient-rated power dissipation, dual-drain thermal path, fast 7.2 ns turn-on delay, 150–300 ns body diode reverse recovery time, and compatibility with automatic insertion and stackable board layouts.
Technical Context
This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for ruggedness and dynamic dV/dt immunity (5.0 V/ns). Its internal structure includes integrated body diode with 1.8 V forward drop at 0.80 A and 0.91–1.8 μC reverse recovery charge, enabling reliable unclamped inductive switching.
The device operates across –55 °C to +150 °C junction temperature range and supports linear derating (0.0083 W/°C above 25 °C). It is rated for 260 mJ single-pulse avalanche energy and features low-inductance internal leads (LD = 4.0 nH, LS = 6.0 nH), critical for minimizing voltage overshoot in high-speed switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - maximum blocking voltage for use in 100–150 V DC bus applications |
| RDS(on) | 0.80 Ω @ VGS = 10 V - enables <1 W conduction loss at 0.80 A continuous drain current |
| Qg | 14 nC - determines gate drive power requirement and switching speed in PWM circuits |
| ID (continuous) | 0.80 A @ TA = 25 °C - defines usable current in natural-convection cooled PCB layouts |
| EAS | 260 mJ - supports safe operation during transient inductive load turn-off without external snubbers |
| TJ range | –55 °C to +150 °C - ensures functionality in extended-temperature industrial environments |
| dV/dt rating | 5.0 V/ns - resists false triggering in noisy high-dV/dt motor or solenoid drive circuits |
Pinout & Package
HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4) serving as thermal and electrical connection points; case length 7.87–8.38 mm, width 7.62–10.79 mm, height 6.86–7.36 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main power drain terminal | Dual-drain configuration shares current and provides low-thermal-resistance path to heatsink or copper pour |
| Pin 2 (Gate) | Control input | Low-threshold (2.0–4.0 V) gate accepts standard 5 V or 10 V logic-level drive with minimal external components |
| Pin 3 (Source) | Power return reference | Common source node for body diode conduction and gate-source voltage reference; tied to ground or low-side switch node |
| Pin 4 (Drain) | Main power drain terminal | Electrically and thermally identical to Pin 1; enables parallel mounting and improved heat spreading on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 5.2 A IAR and 0.10 mJ EAR without degradation - eliminates need for external clamping in relay/solenoid drivers |
| Dynamic dV/dt immunity | 5.0 V/ns rating prevents spurious turn-on during fast voltage transients in inductive loads |
| End stackable DIP package | Enables vertical stacking of multiple IRFD220PBF units on 0.1" grid - saves PCB area in multi-channel driver modules |
| Fast switching performance | 7.2 ns td(on), 22 ns tr, 19 ns td(off), 13 ns tf - reduces switching losses in 100 kHz+ PWM applications |
| Low gate charge | 14 nC Qg with only 3.0 nC Qgs - simplifies gate driver design and improves efficiency in battery-powered systems |
Applications
| Industrial Relay Drivers | LED Dimming Circuits |
|---|---|
|
Use Scenario: Driving 24 V DC electromagnetic relays with coil inductance >100 mH in PLC output modules. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; handles unclamped inductive flyback via built-in avalanche capability. Use Value: Eliminates external TVS or RC snubber; 260 mJ EAS withstands repeated 24 V coil turn-off transients without derating. |
Use Scenario: PWM dimming of high-brightness LED strings in signage and architectural lighting. IC Role / Device Role / Timing Role: Constant-current switch operating at 1–20 kHz; body diode conducts freewheeling current during off-time. Use Value: 150–300 ns trr and 0.91–1.8 μC Qrr minimize switching loss and EMI during high-frequency LED current commutation. |
| Low-Power Motor Control | AC Solid-State Relays |
|
Use Scenario: Bidirectional DC motor control in small actuators using H-bridge configurations with discrete MOSFETs. IC Role / Device Role / Timing Role: Half-bridge low-side switch; coordinated with complementary high-side device to manage direction and braking. Use Value: 0.80 Ω RDS(on) limits I²R loss at 0.80 A stall current; 120 °C/W RthJA allows operation with minimal copper area. |
Use Scenario: Zero-crossing or random-phase AC switching in compact SSR modules for HVAC and appliance control. IC Role / Device Role / Timing Role: Isolated gate-driven switch interfacing with optocoupler; blocks 200 V peak AC line voltage. Use Value: 200 V VDS rating supports 120 V RMS AC mains with safety margin; dual-drain package aids thermal management under sustained load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V VDS, 1 A ID, 11 Ω RDS(on), TO-92 package - higher voltage rating but significantly higher on-resistance and different footprint | Preferred where higher blocking voltage is required, but unsuitable for space-constrained DIP layouts or low-loss 24 V systems | Select STP1NK60ZFP only when 600 V rating is mandatory; not a drop-in replacement due to TO-92 vs. HVMDIP mechanical mismatch |
| FQP30N06L | 60 V VDS, 30 A ID, 0.028 Ω RDS(on), TO-220 package - much lower RDS(on) but inadequate voltage headroom for 200 V applications | Better suited for high-current, low-voltage DC-DC or motor drives below 48 V; cannot replace IRFD220PBF in 100–200 V circuits | Choose FQP30N06L only for sub-60 V systems requiring high current; incompatible with IRFD220PBF's voltage class and through-hole DIP mounting |
Compared with STP1NK60ZFP and FQP30N06L, the IRFD220PBF uniquely balances 200 V blocking, 0.80 Ω conduction resistance, HVMDIP stackability, and 1 W ambient power handling - making it optimal for compact, medium-voltage industrial switching where thermal and layout constraints rule out larger packages.
Availability
IRFD220PBF is available at Aetrix Electronics and suitable for industrial relay drivers, LED dimming circuits, and low-power motor control applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRFD220PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix, a division of Vishay Intertechnology, designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRFD220PBF belongs to Vishay's third-generation power MOSFET family engineered for cost-effective, machine-insertable switching in industrial controls - prioritizing dynamic robustness, ease of paralleling, and thermal efficiency in compact DIP formats.
FAQ
What is the maximum continuous drain current for the IRFD220PBF at 100 °C ambient temperature?
The IRFD220PBF supports 0.50 A continuous drain current at TA = 100 °C, per its absolute maximum ratings table. This derating reflects its 120 °C/W junction-to-ambient thermal resistance and 1.0 W maximum power dissipation at 25 °C. Engineers must verify PCB copper area and airflow when operating near this limit. The IRFD220PBF datasheet specifies linear derating beyond 25 °C using 0.0083 W/°C.
Does the IRFD220PBF have an integrated body diode, and what are its key parameters?
Yes, the IRFD220PBF includes an intrinsic body diode rated for 0.80 A continuous forward current and 6.4 A pulsed current. Key parameters include 1.8 V forward voltage at 0.80 A and 25 °C, 150–300 ns reverse recovery time, and 0.91–1.8 μC reverse recovery charge. These values are measured under specified test conditions in the IRFD220PBF datasheet and directly impact EMI and switching loss in freewheeling applications.
Can the IRFD220PBF be used in avalanche mode, and what are its avalanche energy ratings?
Yes, the IRFD220PBF is explicitly repetitive avalanche rated: 5.2 A IAR, 0.10 mJ EAR, and 260 mJ single-pulse EAS. These values are validated per Vishay's unclamped inductive test circuit (Fig. 12a) with L = 152 mH, Rg = 25 Ω, and IAS = 1.6 A. The IRFD220PBF's ruggedized die design enables reliable operation in inductive switching without external protection.
What is the gate threshold voltage range for the IRFD220PBF, and how does it affect drive requirements?
The IRFD220PBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA, confirming compatibility with 5 V logic-level drive. Its 14 nC total gate charge and 3.0 nC gate-source charge enable simple resistor-based or microcontroller GPIO driving - no dedicated gate driver needed for moderate-speed switching. This behavior is documented in the IRFD220PBF specifications table.
Is the IRFD220PBF RoHS-compliant and lead-free?
Yes, the IRFD220PBF is lead (Pb)-free and RoHS-compliant, as confirmed by its ordering code suffix "PbF" and compliance documentation referenced in Vishay's material categorization notice (www.vishay.com/doc?99912). The IRFD220PBF meets JEDEC J-STD-020 moisture sensitivity level 1 and supports peak soldering temperatures up to 300 °C for 10 seconds, per its package data sheet.
IRFD220PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 480mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD220PBF FAQ
1.How can I place an order for IRFD220PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD220PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD220PBF reliable?
The price and inventory of IRFD220PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD220PBF is usually 5 days.
3.What payment methods are accepted for IRFD220PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD220PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD220PBF?
IRFD220PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD220PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD220PBF?
For technical support, including IRFD220PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD220PBF requirements.
6.How does Aetrix verify that IRFD220PBF is sourced from the original manufacturer or authorized distributors?
All IRFD220PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD220PBF meets industry standards.
7.What is the process for return or replacement of IRFD220PBF?
All IRFD220PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD220PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD220PBF part is unused and in its original packaging.
Return procedure for IRFD220PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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