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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD224

Name: IRFD224
Brand: Vishay Siliconix
SKU: IRFD224
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD224

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD224.pdf

Description:: MOSFET N-CH 250V 630MA 4DIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFD224 from Vishay Siliconix is a 250 V, 0.63 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating up to 0.63 A - designed for low-power switching in industrial control and power supply auxiliary circuits.

For engineers reviewing the IRFD224 datasheet, IRFD224 pinout, IRFD224 application, or IRFD224 equivalent, key selection criteria include its 250 V V_DS, 1.1 Ω on-resistance at 10 V drive, 120 °C/W R_thJA, fast 7 ns turn-on delay, and HVMDIP through-hole mountability for automated insertion and thermal stacking.

Technical Context

This N-channel enhancement-mode MOSFET uses third-generation silicon technology optimized for ruggedness and fast switching in low-current, high-voltage applications. Its design includes dynamic dV/dt rating (4.8 V/ns), integral body diode with 200–400 ns reverse recovery time, and internal source/drain inductance (6.0/4.0 nH) that impacts high-speed layout.

The device operates across –55 °C to +150 °C junction temperature range, supports unclamped inductive switching with 60 mJ single-pulse avalanche energy, and delivers linear derating of 0.0083 W/°C above 25 °C ambient - enabling reliable operation in thermally constrained PCB environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports primary-side switching in offline flyback and auxiliary rail designs up to 250 V DC bus.
R_DS(on)	1.1 Ω @ V_GS = 10 V - enables <1 W conduction loss at 0.63 A continuous drain current in TO-92–sized footprint.
Q_g	14 nC - determines gate drive power requirement; compatible with standard logic-level drivers without external buffering.
t_d(on)	7.0 ns - supports >10 MHz switching in resonant or soft-switching topologies when layout parasitics are minimized.
R_thJA	120 °C/W - requires heatsinking or airflow for sustained >0.4 A operation at >70 °C ambient.
E_AS	60 mJ - allows safe operation under unclamped inductive load transients without external snubbers in relay drivers.
V_GS(th)	2.0–4.0 V - ensures clean turn-on with TTL/CMOS-compatible 5 V logic, avoiding partial conduction in noise-prone environments.

Pinout & Package

The IRFD224 is housed in the HVMDIP (High Voltage Mini-DIP) package - a 4-pin, through-hole, end-stackable DIP variant with dual drain leads serving as thermal paths to the PCB. Dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H), 2.54 mm pin pitch.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D1)	Main current path from drain to source	Dual drain configuration provides parallel current path and enhanced thermal coupling to copper pour on PCB.
Drain (D2)	Second drain terminal, electrically identical to D1	Enables mechanical stacking of multiple units and improves heat spreading across board surface.
Gate (G)	Control electrode for channel formation	Low 2.7 nC Q_gs enables fast, low-power switching with minimal driver stress.
Source (S)	Reference node for gate voltage and return path	Single-source connection simplifies grounding; internal source inductance (6.0 nH) affects high-di/dt ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for 0.63 A I_AR and 0.10 mJ E_AR - enables robust operation in inductive load switching without external protection.
Dynamic dV/dt rating	4.8 V/ns - suppresses false turn-on during high-slew-rate voltage transients in motor drive or relay coil snubbing.
End stackable HVMDIP	Standard 0.1" pin spacing and dual drain terminals allow vertical stacking for thermal sharing and space-constrained layouts.
Fast switching	7 ns t_d(on), 13 ns t_r, 20 ns t_d(off), 12 ns t_f - reduces switching losses in high-frequency SMPS auxiliary supplies.
Simple drive requirements	V_GS(th) 2.0–4.0 V and Q_g = 14 nC - compatible with microcontroller GPIO or low-current gate drivers without level-shifting.

Applications

Relay Driver Circuit	Offline Flyback Auxiliary Supply
Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules where inductive kick must be clamped reliably. IC Role / Device Role / Timing Role: High-voltage switch controlling relay coil current; handles 250 V flyback spikes during de-energization. Use Value: Repetitive avalanche rating (0.63 A I_AR) and 60 mJ E_AS eliminate need for external TVS or snubber diodes.	Use Scenario: Providing bias power to PWM controller ICs in primary-side regulated flyback converters operating directly from rectified AC line. IC Role / Device Role / Timing Role: Low-current high-voltage switch in auxiliary winding rectifier stage or startup circuit. Use Value: 250 V V_DS withstands peak line voltages up to 350 VDC; 1.1 Ω R_DS(on) limits conduction loss in <1 W auxiliary rails.
Thermal Stackable Sensor Interface	Low-Power DC-DC Isolated Gate Driver
Use Scenario: Isolating and switching analog sensor signals in multi-channel industrial temperature monitoring systems with shared thermal ground planes. IC Role / Device Role / Timing Role: Signal-path switch enabling channel multiplexing while maintaining thermal continuity between stacked units. Use Value: Dual drain terminals and HVMDIP stackability allow direct thermal coupling to common heatsink or copper plane across multiple IRFD224 devices.	Use Scenario: Level-shifting and isolating gate drive signals for high-side MOSFETs in half-bridge motor controllers using optocoupler-coupled inputs. IC Role / Device Role / Timing Role: Fast, low-Q_g output stage delivering clean 10 V gate pulses with sub-10 ns delay. Use Value: 7 ns t_d(on) and 14 nC Q_g ensure precise timing alignment and minimal propagation skew in isolated gate drive paths.

Relay Driver Circuit

Offline Flyback Auxiliary Supply

Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules where inductive kick must be clamped reliably.

IC Role / Device Role / Timing Role: High-voltage switch controlling relay coil current; handles 250 V flyback spikes during de-energization.

Use Value: Repetitive avalanche rating (0.63 A I_AR) and 60 mJ E_AS eliminate need for external TVS or snubber diodes.

Use Scenario: Providing bias power to PWM controller ICs in primary-side regulated flyback converters operating directly from rectified AC line.

IC Role / Device Role / Timing Role: Low-current high-voltage switch in auxiliary winding rectifier stage or startup circuit.

Use Value: 250 V V_DS withstands peak line voltages up to 350 VDC; 1.1 Ω R_DS(on) limits conduction loss in <1 W auxiliary rails.

Thermal Stackable Sensor Interface

Low-Power DC-DC Isolated Gate Driver

Use Scenario: Isolating and switching analog sensor signals in multi-channel industrial temperature monitoring systems with shared thermal ground planes.

IC Role / Device Role / Timing Role: Signal-path switch enabling channel multiplexing while maintaining thermal continuity between stacked units.

Use Value: Dual drain terminals and HVMDIP stackability allow direct thermal coupling to common heatsink or copper plane across multiple IRFD224 devices.

Use Scenario: Level-shifting and isolating gate drive signals for high-side MOSFETs in half-bridge motor controllers using optocoupler-coupled inputs.

IC Role / Device Role / Timing Role: Fast, low-Q_g output stage delivering clean 10 V gate pulses with sub-10 ns delay.

Use Value: 7 ns t_d(on) and 14 nC Q_g ensure precise timing alignment and minimal propagation skew in isolated gate drive paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, 1.2 Ω R_DS(on), TO-92 package, no avalanche rating	Higher voltage rating but lacks repetitive avalanche capability and dual-drain thermal path	Prefer IRFD224 for inductive loads requiring avalanche ruggedness; STP1NK60Z suits higher-voltage, non-inductive switching only.
IRF820	500 V V_DS, 3.0 Ω R_DS(on), TO-220 package, 1.5 A I_D, no HVMDIP stackability	Higher current and voltage but larger footprint and no end-stacking feature	Choose IRFD224 for compact, stackable, low-power (<1 W) designs; IRF820 fits higher-power, non-space-constrained applications.

Compared with STP1NK60Z and IRF820, the IRFD224 uniquely combines 250 V rating, dual-drain thermal stacking, repetitive avalanche capability, and 4-pin DIP automation compatibility - making it optimal for space- and reliability-sensitive low-power industrial switching.

Availability

IRFD224 is available at Aetrix Electronics and suitable for relay drivers, offline flyback auxiliary supplies, thermal-stackable sensor interfaces, and low-power isolated gate drivers requiring stable component supply and long-term manufacturability.

Supply support for IRFD224 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.

The IRFD224 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, automated-insertion switching in industrial control, power supply auxiliary rails, and thermally constrained embedded systems.

FAQ

What is the maximum continuous drain current for the IRFD224 at 100 °C ambient temperature?

The IRFD224 supports 0.40 A continuous drain current at TA = 100 °C, per its absolute maximum ratings table. This derating reflects its 120 °C/W junction-to-ambient thermal resistance and 150 °C maximum junction temperature. Operation above this current requires forced cooling or reduced ambient temperature to maintain safe TJ. The IRFD224 datasheet specifies linear derating of 0.0083 W/°C above 25 °C ambient.

Does the IRFD224 have a specified body diode reverse recovery time, and how does it affect switching performance?

Yes, the IRFD224 body diode has a typical reverse recovery time (t_rr) of 200–400 ns at TJ = 25 °C, IF = 4.4 A, and dI/dt = 100 A/μs. This parameter directly impacts turn-off losses and EMI in hard-switched topologies. The IRFD224's relatively slow recovery necessitates careful snubber design or soft-switching techniques when used in synchronous rectification or bidirectional current paths.

Can the IRFD224 be used in avalanche mode, and what are the limits?

Yes, the IRFD224 is explicitly repetitive avalanche rated: 0.63 A I_AR and 0.10 mJ E_AR at TA = 25 °C. Its single-pulse avalanche energy is 60 mJ. These ratings assume pulse width limited by junction temperature (see Fig. 11) and require proper thermal management. The IRFD224's avalanche capability eliminates external clamping components in relay and solenoid drive applications - a key design advantage over non-avalanche-rated MOSFETs.

What is the gate threshold voltage range for the IRFD224, and how does it impact logic-level drive compatibility?

The IRFD224 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This allows reliable turn-on with standard 5 V TTL/CMOS logic outputs, though full enhancement (R_DS(on) ≤ 1.1 Ω) requires V_GS ≥ 10 V. The IRFD224's moderate V_GS(th) avoids unintended conduction from noise while ensuring compatibility with common microcontroller GPIOs.

Is the IRFD224 RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, the IRFD224PbF ordering part number confirms lead (Pb)-free compliance per RoHS Directive 2011/65/EU. The 'PbF' suffix denotes Vishay's lead-free termination finish and packaging - verified in the official datasheet revision D (30-Aug-2021). All IRFD224PbF units meet JEDEC J-STD-020 moisture sensitivity level 1 and are suitable for lead-free reflow soldering processes up to 300 °C peak for 10 seconds.

IRFD224 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 630mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 380mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD224 FAQ

1.How can I place an order for IRFD224 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD224 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD224 reliable?

The price and inventory of IRFD224 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD224 is usually 5 days.

3.What payment methods are accepted for IRFD224?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD224 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD224?

IRFD224 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD224 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD224?

For technical support, including IRFD224 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD224 requirements.

6.How does Aetrix verify that IRFD224 is sourced from the original manufacturer or authorized distributors?

All IRFD224 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD224 meets industry standards.

7.What is the process for return or replacement of IRFD224?

All IRFD224 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD224, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD224 part is unused and in its original packaging.

Return procedure for IRFD224:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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