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Vishay Siliconix IRFD224PBF
- Part No.:
- IRFD224PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD224PBF.pdf
- Description:
- MOSFET N-CH 250V 630MA 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,581
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Product details
Overview
IRFD224PBF from Vishay Siliconix is a 250 V, 0.63 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating. It serves as a low-power switching device in DC-DC converters, relay drivers, and solid-state load switches where thermal management via dual-drain mounting is critical.
For engineers reviewing the IRFD224PBF datasheet, IRFD224PBF pinout, IRFD224PBF application, or IRFD224PBF equivalent, key selection criteria include its 250 V VDS, 1.1 Ω on-resistance at 10 V gate drive, 120 °C/W junction-to-ambient thermal resistance, 60 mJ single-pulse avalanche energy, and compatibility with automated insertion and stackable board layouts.
Technical Context
This MOSFET employs third-generation silicon process technology optimized for ruggedness and fast switching in low-current, high-voltage applications. Its design includes dynamic dV/dt immunity (4.8 V/ns), integrated body diode with 200–400 ns reverse recovery time, and gate threshold voltage of 2.0–4.0 V - enabling reliable operation under transient stress and moderate-speed PWM control.
The HVMDIP package features dual drain terminals serving as thermal links to the PCB, supporting up to 1 W power dissipation without heatsink. Internal source and drain inductances are specified at 6.0 nH and 4.0 nH respectively, minimizing switching oscillation in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports operation in 120/240 VAC-derived DC rails and unregulated industrial supplies |
| RDS(on) | 1.1 Ω @ VGS = 10 V - delivers ≤0.4 W conduction loss at 0.63 A continuous current |
| Qg | 14 nC - enables efficient gate driving with standard logic-level or microcontroller outputs |
| EAS | 60 mJ - withstands unclamped inductive switching events in relay/snubberless solenoid circuits |
| RthJA | 120 °C/W - requires minimal copper area for thermal relief in low-power surface-mount designs |
| ID (TA = 25 °C) | 0.63 A - defines maximum continuous current in natural-convection ambient conditions |
| dV/dt Rating | 4.8 V/ns - ensures immunity to false turn-on during high-slew-rate noise transients |
Pinout & Package
HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4), gate (pin 2), source (pin 3). Molded plastic case with exposed drain tabs for thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D) | Drain | Primary high-side switch node; electrically and thermally connected to metal tab for heat sinking |
| Pin 2 (G) | Gate | Control input requiring ≤±20 V; low 2.7 nC Qgs enables fast, low-power toggling |
| Pin 3 (S) | Source | Reference node for gate drive and load return path; internal 6.0 nH inductance affects di/dt sensitivity |
| Pin 4 (D) | Drain | Second drain terminal - paralleled with Pin 1 to reduce effective RDS(on) and improve thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation in inductive load switching without external snubbers (IAR = 0.63 A, EAR = 0.10 mJ) |
| Dynamic dV/dt rating | 4.8 V/ns immunity prevents spurious turn-on in noisy industrial environments |
| End stackable package | HVMDIP mechanical design allows vertical stacking of multiple units on 0.1" grid for space-constrained PCBs |
| Fast switching | 7 ns turn-on delay + 13 ns rise time supports >1 MHz PWM in low-power SMPS stages |
| Simple drive requirements | 2.0–4.0 V VGS(th) and 14 nC Qg allow direct MCU GPIO or logic buffer control |
Applications
| Motor Control Interface | Industrial Relay Driver |
|---|---|
Use Scenario: Driving small DC motors (<10 W) in programmable logic controllers and sensor-actuator modules. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and enable via PWM duty cycle. Use Value: 1.1 Ω RDS(on) limits I²R loss to <0.4 W; dual-drain thermal path sustains 0.63 A continuous without heatsink. | Use Scenario: Replacing electromechanical relays in HVAC control panels and building automation systems. IC Role / Device Role / Timing Role: Solid-state replacement for 24 VDC coil drivers with zero contact bounce and infinite cycle life. Use Value: Repetitive avalanche rating absorbs inductive kickback from relay coils without clamping diodes. |
| DC-DC Converter Switch | Overvoltage Protection Circuit |
Use Scenario: High-side switch in isolated flyback or forward converter auxiliary supplies (≤5 W output). IC Role / Device Role / Timing Role: Primary-side switching element synchronized to controller IC with 20 ns turn-off delay. Use Value: 250 V VDS accommodates reflected flyback voltages; 14 nC Qg minimizes driver power consumption. | Use Scenario: Crowbar element in 12–48 V DC power distribution systems to clamp overvoltage faults. IC Role / Device Role / Timing Role: Fast-acting shunt switch triggered by voltage supervisor to short rail to ground. Use Value: 60 mJ EAS handles single-event surge energy; 4.8 V/ns dV/dt rating prevents false triggering during transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60Z | 600 V VDS, 1.2 Ω RDS(on), TO-92 package, no avalanche rating | Lacks repetitive avalanche capability; higher VDS margin but larger RDS(on) and no dual-drain thermal path | Prefer when higher voltage headroom is required and thermal constraints are relaxed |
| IRFL4310 | 100 V VDS, 0.12 Ω RDS(on), SOT-223, 1.2 A ID, no avalanche rating | Lower voltage rating but significantly lower on-resistance and higher current; surface-mount only | Choose for higher efficiency in ≤24 V systems where PCB space and thermal mass permit SMT layout |
Compared with STP1NK60Z and IRFL4310, the IRFD224PBF uniquely combines 250 V blocking, repetitive avalanche capability, and through-hole stackable thermal packaging - making it optimal for ruggedized, low-power industrial controls where reliability under inductive stress and manual/automated assembly coexist.
Availability
IRFD224PBF is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC auxiliary supplies, and solid-state motor interface circuits requiring stable component supply across long-lifecycle embedded programs.
Supply support for IRFD224PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFD series targets cost-sensitive, medium-voltage switching applications demanding ruggedness, ease of assembly, and thermal performance in compact through-hole packages - particularly for legacy and new-design industrial controls.
FAQ
What is the maximum continuous drain current for IRFD224PBF at 100 °C ambient temperature?
The IRFD224PBF supports 0.40 A continuous drain current at TA = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the HVMDIP package's 120 °C/W junction-to-ambient resistance. At 25 °C ambient, the rating increases to 0.63 A. Designers must verify PCB copper area and airflow to sustain this current in real-world conditions. The IRFD224PBF datasheet specifies linear derating beyond 25 °C using 0.0083 W/°C.
Does IRFD224PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFD224PBF integrates a body diode with 0.63 A continuous forward current rating (IS), 5.0 A pulsed capability (ISM), and 1.8 V forward voltage (VSD) at 0.63 A and 25 °C. Its reverse recovery time is 200–400 ns, and reverse recovery charge is 0.93–1.9 μC. These values are measured under standardized conditions (IF = 4.4 A, dI/dt = 100 A/μs) and directly impact switching losses in freewheeling paths. The IRFD224PBF body diode is not optimized for high-frequency synchronous rectification.
Can IRFD224PBF be used in avalanche mode, and what are the safe operating limits?
Yes, the IRFD224PBF is explicitly rated for repetitive avalanche operation: IAR = 0.63 A and EAR = 0.10 mJ per pulse. Single-pulse avalanche energy is rated at 60 mJ (EAS), tested with VDD = 50 V, L = 15 mH, Rg = 25 Ω, and IAS = 2.5 A. Safe use requires limiting pulse width and duty cycle to prevent junction temperature exceedance (TJ ≤ 150 °C). The IRFD224PBF datasheet provides SOA curves and thermal response data to validate specific circuit conditions.
What is the gate threshold voltage range for IRFD224PBF, and how does it affect drive compatibility?
The IRFD224PBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA, ensuring reliable turn-on with standard 5 V logic or microcontroller GPIOs. However, full enhancement (RDS(on) ≤ 1.1 Ω) requires VGS ≥ 10 V. Below 4.0 V, the device operates in weak inversion with high on-resistance - unsuitable for power switching. The IRFD224PBF's 2.7 nC Qgs and 14 nC Qg make it compatible with low-drive-strength sources when operated within its specified VGS window.
Is IRFD224PBF RoHS-compliant and lead-free?
Yes, IRFD224PBF is lead (Pb)-free and RoHS-compliant, as confirmed by its "PbF" suffix and Vishay's material categorization documentation (www.vishay.com/doc?99912). The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for through-hole reflow and wave soldering. Peak soldering temperature is rated at 300 °C for 10 seconds. The IRFD224PBF packaging and marking comply with EU Directive 2011/65/EU and subsequent amendments.
IRFD224PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 630mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.1Ohm @ 380mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD224PBF FAQ
1.How can I place an order for IRFD224PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD224PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD224PBF reliable?
The price and inventory of IRFD224PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD224PBF is usually 5 days.
3.What payment methods are accepted for IRFD224PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD224PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD224PBF?
IRFD224PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD224PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD224PBF?
For technical support, including IRFD224PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD224PBF requirements.
6.How does Aetrix verify that IRFD224PBF is sourced from the original manufacturer or authorized distributors?
All IRFD224PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD224PBF meets industry standards.
7.What is the process for return or replacement of IRFD224PBF?
All IRFD224PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD224PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD224PBF part is unused and in its original packaging.
Return procedure for IRFD224PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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