Vishay Siliconix IRFD310

Overview

IRFD310 from Vishay Siliconix is a 400 V, 0.35 A N-channel power MOSFET in HVMDIP package, featuring 3.6 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and repetitive avalanche rating. It serves as a high-voltage switching device in low-power AC/DC converters, relay drivers, and solid-state switches requiring robust dV/dt immunity and automatic insertion capability.

For engineers reviewing the IRFD310 datasheet, IRFD310 pinout, IRFD310 application, or IRFD310 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics (t_rr = 240–540 ns), and real-world design implications of its 120 °C/W R_thJA and 46 mJ single-pulse avalanche energy.

Technical Context

The IRFD310 implements a planar vertical DMOS structure optimized for high-voltage blocking (400 V V_DS) with controlled threshold voltage (2.0–4.0 V) and low gate charge (Q_g = 17 nC, Q_gd = 8.5 nC), enabling fast switching in <100 ns turn-on/turn-off times. Its dual-drain HVMDIP package provides thermal conduction to PCB while supporting end-stacking and machine insertion.

It operates across –55 to +150 °C junction temperature range, supports unclamped inductive switching up to 0.35 A repetitive avalanche current, and exhibits 4.0 V/ns peak diode recovery dV/dt capability-critical for snubberless flyback and inductive load control.

Key Specifications

Pinout & Package

The IRFD310 uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package with dual drain leads (D1, D2), source (S), and gate (G). The dual drain configuration provides enhanced thermal path to the PCB and mechanical stability for automated insertion.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Compared with STP3NK60ZFP and IXTP01N400P, the IRFD310 uniquely combines 400 V rating, 3.6 Ω on-resistance, 46 mJ avalanche energy, and HVMDIP's thermal and mechanical advantages-making it optimal for cost-sensitive, auto-inserted, thermally constrained industrial controls.

Availability

IRFD310 is available at Aetrix Electronics and suitable for AC/DC auxiliary supplies, electromechanical relay drivers, and LED string switching requiring stable component supply, long-lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for IRFD310 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and manufacturability.

The IRFD310 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, auto-insertable solutions in industrial control, appliance, and power conversion where thermal management, avalanche robustness, and ease of paralleling matter.

FAQ

What is the maximum continuous drain current for the IRFD310 at 100 °C ambient temperature?

The IRFD310 supports 0.22 A continuous drain current at TA = 100 °C, derived from its 0.35 A rating at 25 °C and linear derating factor of 0.0083 W/°C. This reflects thermal limitation of its HVMDIP package, not silicon capability. Designers must verify PCB copper area and airflow to sustain this current without exceeding 150 °C junction temperature. The IRFD310 datasheet specifies absolute maximum ratings under defined test conditions, and actual performance depends on layout and thermal environment.

Does the IRFD310 have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFD310 integrates a body diode with typical forward voltage V_SD = 1.6 V at IS = 0.35 A and TJ = 25 °C. Its reverse recovery time t_rr ranges from 240 to 540 ns, and reverse recovery charge Q_rr is 0.85–1.6 μC, measured at IF = 2.0 A and dI/dt = 100 A/μs. These values directly impact switching losses and dead-time requirements in bridge topologies. The IRFD310's body diode is intrinsic to its MOSFET structure and cannot be disabled.

Can the IRFD310 be used in avalanche mode, and what are the limits?

Yes, the IRFD310 is explicitly repetitive avalanche rated: it supports 0.35 A repetitive avalanche current (I_AR) and 0.10 mJ repetitive avalanche energy (E_AR). Single-pulse avalanche energy is 46 mJ. Operation in avalanche mode requires pulse width and duty cycle constraints per Figure 11 in the IRFD310 datasheet to avoid exceeding T_JMAX = 150 °C. This capability enables snubberless inductive switching in relay drivers and flyback converters.

What is the gate threshold voltage range for the IRFD310, and how does it affect drive compatibility?

The IRFD310 has a gate-source threshold voltage V_GS(th) of 2.0–4.0 V at ID = 250 μA, ensuring reliable turn-on with standard 5 V TTL or 3.3 V CMOS logic outputs. However, full enhancement (low R_DS(on)) requires V_GS ≥ 10 V. Drive circuits must supply sufficient gate charge (Q_g = 17 nC) within timing constraints-especially given Q_gd = 8.5 nC's impact on Miller plateau duration. The IRFD310's threshold range avoids unintended turn-on from noise while maintaining compatibility with common microcontrollers.

Is the IRFD310 RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, the IRFD310PbF variant is lead (Pb)-free and RoHS-compliant, as confirmed by Vishay's material categorization documentation (www.vishay.com/doc?99912). The 'PbF' suffix denotes compliance with EU RoHS Directive 2011/65/EU and related global environmental regulations. All IRFD310PbF units shipped by Aetrix Electronics meet JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for through-hole reflow and wave soldering per the IRFD310 package specification.