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Vishay Siliconix IRFD310PBF

Part No.:
IRFD310PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
4-DIP (0.300", 7.62mm)
Datasheet:
AetrixIRFD310PBF.pdf
Description:
MOSFET N-CH 400V 350MA 4DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,012

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Product details

Overview

IRFD310PBF from Vishay Siliconix is a 400 V, 0.35 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 3.6 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and repetitive avalanche rating - designed for low-power AC/DC flyback snubber circuits, relay drivers, and solid-state switching in industrial controls.

For engineers reviewing the IRFD310PBF datasheet, IRFD310PBF pinout, IRFD310PBF application, or IRFD310PBF equivalent, key selection criteria include its 400 V VDS, 1.0 W PD at TA = 25 °C, dV/dt immunity of 4.0 V/ns, body diode trr up to 540 ns, and HVMDIP through-hole mountability for high-voltage isolation.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for ruggedness and ease of paralleling. Its dual-drain HVMDIP package serves as a thermal link to the PCB, enabling 1 W dissipation without heatsink - critical for space-constrained board-level snubbers and low-duty-cycle switching.

The IRFD310PBF integrates a fast-recovery body diode (trr = 240–540 ns, Qrr = 0.85–1.6 μC) and supports unclamped inductive switching with EAS = 46 mJ, making it suitable for energy recovery in flyback and boost converters where voltage overshoot must be clamped without external diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS400 V - supports mains-referenced switching up to 280 VRMS with safety margin
RDS(on)3.6 Ω max at VGS = 10 V - enables <1 W conduction loss at 0.35 A DC
Qg17 nC - low gate drive energy reduces controller loading in 20–100 kHz SMPS
EAS46 mJ - withstands single-pulse inductive energy without failure in snubberless designs
TJ Range−55 to +150 °C - qualified for extended-temperature industrial and telecom environments
dV/dt Rating4.0 V/ns - resists false turn-on in high-noise HV node switching
RthJA120 °C/W - defines thermal limit: ΔT = 120 °C at 1 W ambient dissipation

Pinout & Package

HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4), gate (pin 2), source (pin 3); mold compound provides >4 mm creepage between drain and gate/source for 400 V isolation.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Drain)Main current path from drain to channelDual-drain configuration: pins 1 & 4 are internally connected - used together for thermal spreading and current sharing
Pin 2 (Gate)Control electrode for channel formationLow-threshold VGS(th) = 2.0–4.0 V enables direct drive from 5 V logic or microcontroller GPIO
Pin 3 (Source)Reference node for gate control and current returnSource terminal referenced to PCB ground plane; internal source inductance LS = 6.0 nH affects high-dI/dt ringing
Pin 4 (Drain)Second drain connection, electrically identical to Pin 1Provides redundant thermal path to mounting surface; required for full 1 W rating - both drains must be soldered

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables reliable operation under unclamped inductive load transients (IAR = 0.35 A, EAR = 0.10 mJ) without derating
Dynamic dV/dt rating4.0 V/ns immunity prevents spurious turn-on during fast voltage transitions in HV nodes
End stackable HVMDIPAllows vertical stacking of multiple units on same PCB footprint for parallel current handling or redundancy
Fast switchingtd(on) = 8 ns, tr = 9.9 ns, td(off) = 21 ns - supports efficient operation up to 200 kHz in low-power SMPS
Simple drive requirementsVGS(th) range (2.0–4.0 V) and low Qg (17 nC) allow direct microcontroller or optocoupler drive without buffer stage

Applications

AC/DC Flyback SnubberIndustrial Relay Driver

Use Scenario: Absorbing leakage inductance energy in offline flyback converters operating at 60–100 kHz.

IC Role / Device Role / Timing Role: Power MOSFET switch absorbing reflected voltage spikes via avalanche action and body diode conduction.

Use Value: Eliminates need for external RC snubber by leveraging 46 mJ EAS and 400 V VDS, reducing BOM count and layout area.

Use Scenario: Driving 24 VDC or 120 VAC relays in PLC I/O modules with galvanic isolation.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling relay coil current with fast turn-off to suppress back-EMF.

Use Value: Body diode trr ≤ 540 ns and dV/dt immunity prevent latch-up during coil de-energization in noisy industrial environments.

Low-Power Solid-State SwitchOvervoltage Protection Clamp

Use Scenario: Replacing electromechanical switches in battery-powered test equipment requiring >100 k-cycle life.

IC Role / Device Role / Timing Role: Load switch managing 0.35 A DC loads with minimal on-resistance and no contact wear.

Use Value: RDS(on) = 3.6 Ω ensures <0.44 W conduction loss at full current - compatible with 1 W thermal budget in compact enclosures.

Use Scenario: Clamping transient overvoltages on 24–48 V DC rails in motor drives or PoE injectors.

IC Role / Device Role / Timing Role: Avalanche-rated clamp device conducting surge current until TVS or crowbar activates.

Use Value: Repetitive avalanche rating (IAR = 0.35 A) allows sustained clamping without degradation - unlike standard MOSFETs that fail after first event.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP3NK60ZFP600 V VDS, 3.0 Ω RDS(on), TO-92 package, no avalanche ratingLacks repetitive avalanche capability; higher VDS margin but lower thermal performance (RthJA ≈ 150 °C/W)Prefer when higher voltage headroom is needed and avalanche stress is absent
IRF820PBF500 V VDS, 3.0 Ω RDS(on), TO-220 package, 1.5 W PD, no dV/dt specHigher power rating but requires heatsink; larger footprint and no specified dV/dt immunityChoose when >1 W continuous dissipation is required and board space permits TO-220 mounting

Compared with STP3NK60ZFP and IRF820PBF, the IRFD310PBF offers unique combination of HVMDIP mountability, 4.0 V/ns dV/dt rating, and certified repetitive avalanche behavior - making it optimal for compact, noise-immune, low-power snubbing where thermal and layout constraints dominate.

Availability

IRFD310PBF is available at Aetrix Electronics and suitable for AC/DC flyback snubbers, industrial relay drivers, and low-power solid-state switches requiring stable component supply across automotive-grade temperature ranges and long-lifecycle production programs.

Supply support for IRFD310PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFD series targets cost-sensitive, high-isolation, through-hole mounted power switching - engineered for automatic insertion, end-stacking, and robust avalanche performance in legacy and new-design power interfaces.

FAQ

What is the maximum continuous drain current for IRFD310PBF at 100 °C ambient temperature?

The IRFD310PBF supports 0.22 A continuous drain current at TA = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the HVMDIP package with RthJA = 120 °C/W. At 25 °C ambient, the rating rises to 0.35 A. Designers must verify junction temperature using actual board layout and airflow conditions before finalizing IRFD310PBF usage in thermally constrained applications.

Does IRFD310PBF have a specified body diode reverse recovery time?

Yes, the IRFD310PBF datasheet specifies body diode reverse recovery time trr as 240–540 ns (typ./max) at TJ = 25 °C, IF = 2.0 A, and dI/dt = 100 A/μs. This parameter is critical for snubberless flyback and synchronous rectification designs where diode switching losses impact efficiency. The associated Qrr is 0.85–1.6 μC, directly influencing voltage overshoot during turn-off.

Can IRFD310PBF be used in avalanche mode repeatedly?

Yes, the IRFD310PBF is explicitly rated for repetitive avalanche operation: IAR = 0.35 A and EAR = 0.10 mJ, with pulse width limited by junction temperature. This capability is validated per Figure 12 and Note a in the datasheet. It enables reliable use in unclamped inductive switching without external protection - a key differentiator versus non-avalanche-rated MOSFETs like many TO-92 devices.

What is the gate threshold voltage range for IRFD310PBF?

The gate-source threshold voltage VGS(th) for IRFD310PBF is specified as 2.0–4.0 V at VDS = VGS and ID = 250 μA. This range ensures compatibility with 3.3 V and 5 V logic families while maintaining noise margin. The typical value is ~3.0 V, and designers should size gate drive accordingly to guarantee full enhancement across process and temperature variation.

Is IRFD310PBF lead (Pb)-free and RoHS compliant?

Yes, IRFD310PBF is lead-free and RoHS compliant, as confirmed by the "PbF" suffix and Vishay's material categorization documentation (www.vishay.com/doc?99912). The device meets EU RoHS Directive 2011/65/EU and is manufactured using Pb-free terminations and halogen-free molding compounds. Full compliance documentation is available under Vishay document number 91133.

IRFD310PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
4-DIP (0.300", 7.62mm)
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
170 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
4-HVMDIP

IRFD310PBF FAQ

1.How can I place an order for IRFD310PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD310PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD310PBF reliable?

The price and inventory of IRFD310PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD310PBF is usually 5 days.

3.What payment methods are accepted for IRFD310PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD310PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD310PBF?

IRFD310PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD310PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD310PBF?

For technical support, including IRFD310PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD310PBF requirements.

6.How does Aetrix verify that IRFD310PBF is sourced from the original manufacturer or authorized distributors?

All IRFD310PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD310PBF meets industry standards.

7.What is the process for return or replacement of IRFD310PBF?

All IRFD310PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD310PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD310PBF part is unused and in its original packaging.

Return procedure for IRFD310PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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