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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD320PBF

Name: IRFD320PBF
Brand: Vishay Siliconix
SKU: IRFD320PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD320PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD320PBF.pdf

Description:: MOSFET N-CH 400V 490MA 4DIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFD320PBF from Vishay Siliconix is a 400 V, 0.49 A N-channel power MOSFET in HVMDIP (4-pin DIP) package, featuring 1.8 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and repetitive avalanche rating. It serves as a robust high-voltage switching device in low-power AC/DC flyback converters and relay drivers.

For engineers reviewing the IRFD320PBF datasheet, IRFD320PBF pinout, IRFD320PBF application, or IRFD320PBF equivalent, key selection criteria include its 400 V V_DS, 1.8 Ω on-resistance, 120 °C/W R_thJA, fast 10 ns turn-on delay, and dual-drain thermal design for 1 W dissipation in through-hole automated assembly.

Technical Context

This MOSFET employs third-generation planar vertical DMOS technology optimized for ruggedness and fast switching in low-duty-cycle, high-voltage applications. Its dynamic dV/dt rating of 4.0 V/ns and unclamped inductive switching capability support reliable operation under transient overvoltage conditions.

The HVMDIP package integrates dual drain leads as a thermal path to the PCB, enabling 1 W continuous power dissipation without heatsinking. Internal source and drain inductances (L_S = 6.0 nH, L_D = 4.0 nH) are characterized for accurate switching waveform modeling in gate-drive design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports primary-side switching in 230 VAC offline supplies with margin
R_DS(on)	1.8 Ω @ V_GS = 10 V - enables low conduction loss at ≤0.5 A load current
Q_g	20 nC - determines gate drive power requirement and switching speed with 18 Ω R_g
I_D (T_A = 25 °C)	0.49 A - continuous current rating limited by 120 °C/W thermal resistance
E_AS	48 mJ - specifies single-pulse avalanche energy handling without failure
dV/dt Rating	4.0 V/ns - defines maximum tolerable voltage transient slew rate across drain-source
T_J Range	–55 to +150 °C - ensures operation in industrial and automotive under-hood environments

Pinout & Package

HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4), gate (pin 2), source (pin 3). Dual drains provide parallel thermal conduction paths to PCB copper for enhanced heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current-carrying terminal	One of two paralleled drain connections; both pins 1 and 4 must be soldered to same copper pour for optimal thermal performance
Pin 2 (Gate)	Control input	Low-charge, logic-level compatible input requiring ≤20 V drive; 3.3 nC Q_gs enables simple transistor or microcontroller drive
Pin 3 (Source)	Reference node for gate drive	Common return path for load current and gate drive loop; internal source inductance (6.0 nH) affects di/dt-induced ringing
Pin 4 (Drain)	Main current-carrying terminal	Second drain connection-electrically identical to pin 1; used jointly to reduce thermal resistance and improve current sharing

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under unclamped inductive switching (I_AR = 0.49 A, E_AR = 0.10 mJ) without derating in flyback snubberless designs
Dynamic dV/dt rating	4.0 V/ns threshold prevents false turn-on during high-slew transients in high-noise SMPS environments
End stackable DIP package	Allows vertical stacking of multiple units on 0.1" grid for compact, high-density board layouts in multi-output power supplies
Fast switching	10 ns t_d(on), 14 ns t_r, 30 ns t_d(off), 13 ns t_f enable >100 kHz operation with minimal switching loss
Simple drive requirements	Low 3.3 nC Q_gs and 20 nC Q_g allow direct drive from 5 V microcontrollers or small gate drivers without buffering

Applications

AC/DC Flyback Converter Primary Switch	Electromechanical Relay Driver
Use Scenario: Low-power offline adapter (<10 W) with universal input (85–265 VAC) and no active snubber. IC Role / Device Role / Timing Role: Main high-side switch controlling energy transfer into transformer primary; operates in discontinuous conduction mode (DCM) at ~65 kHz. Use Value: 400 V V_DS provides 2× margin over reflected output voltage spikes; 48 mJ E_AS absorbs leakage inductance energy without external clamp.	Use Scenario: Microcontroller-driven control of 24 VDC industrial relays with inductive coil loads. IC Role / Device Role / Timing Role: Low-side switch sinking relay coil current; driven by 3.3 V or 5 V GPIO with RC gate network. Use Value: 1.8 Ω R_DS(on) limits I²R loss to <0.5 W at 0.49 A; body diode t_rr = 270–600 ns safely commutates coil flyback.
High-Voltage Signal Switching	Capacitor Discharge Circuit
Use Scenario: Isolated high-voltage test equipment requiring fast, low-leakage switching of 300 V signals. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) analog switch controlled by optocoupler-isolated gate signal. Use Value: 25 μA I_DSS at 400 V ensures minimal signal path leakage; 0.51 V/°C V_DS tempco maintains breakdown stability across temperature.	Use Scenario: Precision timing circuit discharging a 100 nF capacitor through a 1 kΩ load to generate 100 μs pulses. IC Role / Device Role / Timing Role: High-speed discharge switch triggered by digital pulse; requires predictable turn-off delay and minimal tail current. Use Value: 30 ns t_d(off) and 13 ns t_f ensure sharp pulse edges; low C_oss = 120 pF minimizes residual charge retention.

AC/DC Flyback Converter Primary Switch

Electromechanical Relay Driver

Use Scenario: Low-power offline adapter (<10 W) with universal input (85–265 VAC) and no active snubber.

IC Role / Device Role / Timing Role: Main high-side switch controlling energy transfer into transformer primary; operates in discontinuous conduction mode (DCM) at ~65 kHz.

Use Value: 400 V V_DS provides 2× margin over reflected output voltage spikes; 48 mJ E_AS absorbs leakage inductance energy without external clamp.

Use Scenario: Microcontroller-driven control of 24 VDC industrial relays with inductive coil loads.

IC Role / Device Role / Timing Role: Low-side switch sinking relay coil current; driven by 3.3 V or 5 V GPIO with RC gate network.

Use Value: 1.8 Ω R_DS(on) limits I²R loss to <0.5 W at 0.49 A; body diode t_rr = 270–600 ns safely commutates coil flyback.

High-Voltage Signal Switching

Capacitor Discharge Circuit

Use Scenario: Isolated high-voltage test equipment requiring fast, low-leakage switching of 300 V signals.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) analog switch controlled by optocoupler-isolated gate signal.

Use Value: 25 μA I_DSS at 400 V ensures minimal signal path leakage; 0.51 V/°C V_DS tempco maintains breakdown stability across temperature.

Use Scenario: Precision timing circuit discharging a 100 nF capacitor through a 1 kΩ load to generate 100 μs pulses.

IC Role / Device Role / Timing Role: High-speed discharge switch triggered by digital pulse; requires predictable turn-off delay and minimal tail current.

Use Value: 30 ns t_d(off) and 13 ns t_f ensure sharp pulse edges; low C_oss = 120 pF minimizes residual charge retention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, 1.25 Ω R_DS(on), TO-92 package, higher Q_g (25 nC)	Higher voltage rating but lower current (0.3 A), unsuitable for 1 W dissipation without heatsink	Select when 600 V margin is required and board space allows TO-92 mounting
IRF820PBF	500 V V_DS, 3.0 Ω R_DS(on), same HVMDIP package, higher Q_g (25 nC)	Same footprint and thermal design, but higher on-resistance increases conduction loss by ~67%	Select when 500 V rating is mandatory and 0.49 A current is sufficient

Compared with IRFD320PBF, STP1NK60Z offers higher voltage headroom but reduced thermal capability in TO-92, while IRF820PBF retains the HVMDIP mechanical interface but trades on-resistance for voltage rating-making IRFD320PBF optimal for 400 V, 1 W, automated-through-hole applications.

Availability

IRFD320PBF is available at Aetrix Electronics and suitable for AC/DC flyback converters, electromechanical relay drivers, and high-voltage signal switching applications requiring stable component supply, long-term manufacturability, and Pb-free compliance.

Supply support for IRFD320PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFD series targets cost-sensitive, high-voltage, low-to-medium current switching applications using machine-insertable DIP packages-designed specifically for industrial controls, appliance power stages, and legacy-compatible replacements.

FAQ

What is the maximum continuous drain current for IRFD320PBF at 100 °C ambient temperature?

The IRFD320PBF supports 0.31 A continuous drain current at T_A = 100 °C, derived from its 1.0 W maximum power dissipation and 120 °C/W junction-to-ambient thermal resistance. This rating assumes adequate PCB copper area for heat spreading across both drain pins and accounts for linear derating beyond 25 °C ambient.

Does IRFD320PBF have an integrated body diode, and what are its key recovery characteristics?

Yes, IRFD320PBF includes an integral reverse p–n junction body diode. Its key recovery specs are t_rr = 270–600 ns (at T_J = 25 °C, I_F = 3.3 A, dI/dt = 100 A/μs) and Q_rr = 1.4–3.0 μC. These values enable safe commutation of inductive loads like relay coils without external freewheeling diodes in many low-energy applications.

Can IRFD320PBF be used in avalanche mode, and what are the limits?

Yes, IRFD320PBF is repetitively avalanche rated: I_AR = 0.49 A and E_AR = 0.10 mJ per pulse (pulse width limited by T_Jmax). For single-pulse conditions, it withstands up to 48 mJ (E_AS) at I_AS = 2.0 A. Operation in avalanche requires careful thermal management and adherence to the SOA curve in Figure 8 of the datasheet.

What is the gate threshold voltage range for IRFD320PBF, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for IRFD320PBF is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range confirms standard-level (not logic-level) gate drive compatibility: full enhancement requires ≥10 V, but partial turn-on begins near 2.5 V-so 5 V microcontroller outputs may yield marginal R_DS(on) and should be verified with actual load testing.

Is IRFD320PBF RoHS-compliant and halogen-free?

Yes, IRFD320PBF is lead (Pb)-free and RoHS-compliant per EU Directive 2011/65/EU, as confirmed by the "PbF" suffix and Vishay's material categorization documentation (www.vishay.com/doc?99912). It meets JEDEC JS709B and IPC-1752A requirements for halogen-free status, with chlorine and bromine content below 900 ppm each.

IRFD320PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 490mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8Ohm @ 210mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 410 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD320PBF FAQ

1.How can I place an order for IRFD320PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD320PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD320PBF reliable?

The price and inventory of IRFD320PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD320PBF is usually 5 days.

3.What payment methods are accepted for IRFD320PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD320PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD320PBF?

IRFD320PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD320PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD320PBF?

For technical support, including IRFD320PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD320PBF requirements.

6.How does Aetrix verify that IRFD320PBF is sourced from the original manufacturer or authorized distributors?

All IRFD320PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD320PBF meets industry standards.

7.What is the process for return or replacement of IRFD320PBF?

All IRFD320PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD320PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD320PBF part is unused and in its original packaging.

Return procedure for IRFD320PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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