Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD9010

Name: IRFD9010
Brand: Vishay Siliconix
SKU: IRFD9010
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFD9010

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD9010.pdf

Description:: MOSFET P-CH 50V 1.1A 4DIP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,203

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFD9010 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP package, rated for -50 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and 1.1 A continuous drain current at T_C = 25 °C. It delivers fast switching, low gate charge (11 nC max), and rugged avalanche capability for reverse-polarity power stages in motor control and SMPS.

For engineers reviewing the IRFD9010 datasheet, IRFD9010 pinout, IRFD9010 application, or IRFD9010 equivalent, this page provides verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and real-world design implications for high-reliability discrete power switching.

Technical Context

The IRFD9010 uses Vishay's HVMDIP (High-Voltage Medium-Density Interconnect Package) technology, enabling low on-resistance with high transconductance and extreme ruggedness. Its p-channel architecture supports reverse-polarity operation without level-shifting circuitry, simplifying complementary designs with n-channel counterparts.

It features a built-in body diode with 75 ns typical reverse recovery time (t_rr) and 0.22 μC Q_rr at I_F = -4.7 A, dI/dt = 100 A/μs. Thermal resistance R_thJA is rated up to 120 °C/W, and maximum junction temperature is 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-50 V - Maximum blocking voltage in reverse-polarity configurations; defines safe operating area for DC bus or flyback clamp applications.
R_DS(on)	0.50 Ω max at V_GS = -10 V - Determines conduction loss at 1.1 A; enables <1 W dissipation in compact HVMDIP footprint.
Q_g	11 nC max - Low gate drive energy requirement; reduces driver stress and enables efficient PWM at >100 kHz.
I_D (cont.)	-1.1 A at T_C = 25 °C - Continuous current rating under heatsinked conditions; derates linearly to -0.68 A at 100 °C case.
t_rr	75 ns typical - Body diode recovery speed impacts EMI and cross-conduction risk in synchronous rectification or H-bridge freewheeling.
P_D	1 W at T_C = 25 °C - Power dissipation limit under ideal heatsinking; constrains use to low-duty-cycle or forced-air-cooled topologies.
V_GS(th)	-2.0 to -4.0 V - Threshold voltage range confirms logic-level compatibility with -5 V gate drivers; avoids unintended turn-on near 0 V.

Pinout & Package

HVMDIP package: surface-mount, end-stackable, compact 3-pin outline with D (Drain), S (Source), G (Gate) terminals. Designed for automatic insertion and thermal relief via exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path terminal	Connected to negative rail in reverse-polarity topologies; electrically tied to exposed metal pad for thermal conduction and EMI shielding.
S (Source)	Reference node for gate control and current return	Becomes system ground reference when used in high-side switch configuration; carries full load current and body diode forward current.
G (Gate)	Control electrode for channel modulation	Requires negative bias relative to source; low input capacitance (C_iss = 240 pF) eases driving with standard logic or dedicated gate drivers.

Key Features

Feature	Design Value
Fast switching with t_d(on)/t_f ≤ 9.2/59 ns	Enables high-frequency operation in DC-DC converters while minimizing overlap losses in bridge circuits.
Low Q_gd/Q_g ratio (4.1/11 nC)	Reduces Miller effect sensitivity, improving noise immunity and allowing stable operation with higher gate resistance.
Rugged unclamped inductive switching (I_L = -1.5 A)	Supports reliable operation in relay drivers or solenoid controls without external snubbers under defined test conditions.
Excellent temperature stability of R_DS(on)	Normalized on-resistance varies only ±15% from -55 °C to +150 °C, ensuring predictable conduction loss across industrial environments.
Easy paralleling capability	Positive temperature coefficient of R_DS(on) ensures self-balancing current sharing between multiple IRFD9010 devices.

Applications

Motor Control	Audio Amplifiers
Use Scenario: Bidirectional DC motor drive using half-bridge topology with complementary n-channel and p-channel switches. IC Role / Device Role / Timing Role: High-side p-channel switch providing reverse-polarity voltage control without bootstrap circuitry. Use Value: Eliminates need for floating gate driver; enables simple TTL-compatible control with single-supply logic.	Use Scenario: Output stage in Class AB or Class D audio amplifier requiring low-distortion, low-noise switching. IC Role / Device Role / Timing Role: Complementary output transistor delivering symmetrical positive/negative swing capability. Use Value: Matches n-channel device transconductance and switching speed, reducing crossover distortion and thermal mismatch.
Switched-Mode Converters	Control Circuits
Use Scenario: Synchronous rectifier in isolated flyback or forward converter secondary side. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode, driven by transformer-coupled or auxiliary winding signal. Use Value: Reduces conduction loss by >40% vs. 5.5 V V_SD body diode drop; improves efficiency at light loads where diode conduction dominates.	Use Scenario: Solid-state relay or power sequencer controlling 12–24 V DC loads in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Logic-level controllable high-side switch enabling fail-safe shutdown and polarity inversion. Use Value: Supports direct interface with microcontroller GPIO pins; withstands repetitive surge events per unclamped inductive rating.

Motor Control

Audio Amplifiers

Use Scenario: Bidirectional DC motor drive using half-bridge topology with complementary n-channel and p-channel switches.

IC Role / Device Role / Timing Role: High-side p-channel switch providing reverse-polarity voltage control without bootstrap circuitry.

Use Value: Eliminates need for floating gate driver; enables simple TTL-compatible control with single-supply logic.

Use Scenario: Output stage in Class AB or Class D audio amplifier requiring low-distortion, low-noise switching.

IC Role / Device Role / Timing Role: Complementary output transistor delivering symmetrical positive/negative swing capability.

Use Value: Matches n-channel device transconductance and switching speed, reducing crossover distortion and thermal mismatch.

Switched-Mode Converters

Control Circuits

Use Scenario: Synchronous rectifier in isolated flyback or forward converter secondary side.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode, driven by transformer-coupled or auxiliary winding signal.

Use Value: Reduces conduction loss by >40% vs. 5.5 V V_SD body diode drop; improves efficiency at light loads where diode conduction dominates.

Use Scenario: Solid-state relay or power sequencer controlling 12–24 V DC loads in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Logic-level controllable high-side switch enabling fail-safe shutdown and polarity inversion.

Use Value: Supports direct interface with microcontroller GPIO pins; withstands repetitive surge events per unclamped inductive rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar p-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	V_DS = -100 V, R_DS(on) = 0.3 Ω @ V_GS = -10 V, Q_g = 60 nC - higher voltage rating but slower switching and larger package (TO-220).	Preferred for higher-voltage industrial motor drives (>60 V bus); unsuitable for space-constrained or high-frequency designs.	Select IRF9530NPbF only when -100 V blocking is required and layout allows TO-220 footprint and thermal mass.
Si2301DS-T1-E3	V_DS = -20 V, R_DS(on) = 0.115 Ω @ V_GS = -4.5 V, Q_g = 4.5 nC - logic-level, smaller SOT-23 package, lower voltage rating.	Targeted at portable battery-powered systems with 3.3/5 V logic; cannot replace IRFD9010 in -48 V telecom or automotive applications.	Choose Si2301DS-T1-E3 for ultra-compact, low-voltage, low-power logic-driven switches where -50 V rating is unnecessary.

Compared with IRF9530NPbF and Si2301DS-T1-E3, the IRFD9010 uniquely balances -50 V rating, HVMDIP compactness, sub-10 ns switching, and proven ruggedness in medium-power industrial control-making it optimal for space-limited, reverse-polarity SMPS and motor drivers requiring reliability without over-engineering.

Availability

IRFD9010 is available at Aetrix Electronics and suitable for motor control, audio amplifiers, switched-mode converters, and industrial control circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFD9010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFD9010 belongs to Vishay's HVMDIP p-channel power MOSFET family, engineered for reverse-polarity power switching where simplicity, ruggedness, and compact packaging are critical in motor drives and SMPS.

FAQ

What is the maximum continuous drain current for the IRFD9010 at 100 °C case temperature?

The IRFD9010 supports -0.68 A continuous drain current at T_C = 100 °C, based on its linear derating factor of 0.01 W/°C and 1 W maximum power dissipation at 25 °C. This value reflects thermal limits under sustained conduction, not transient avalanche capability. Designers must verify heatsinking to maintain case temperature within this range during operation of the IRFD9010.

Does the IRFD9010 have avalanche energy rating specifications?

Yes-the IRFD9010 is characterized for unclamped inductive switching with I_L = -1.5 A (T_J ≤ 175 °C, dI/dt ≤ 75 A/μs). While no single-pulse E_AS value is published, the device meets Vishay's ruggedness criteria for repetitive inductive turn-off events in motor and solenoid drive applications. Refer to Figure 15 in the IRFD9010 datasheet for test conditions and waveform validation.

Can the IRFD9010 be driven directly by a 3.3 V microcontroller GPIO?

No-the IRFD9010 has a V_GS(th) range of -2.0 V to -4.0 V and requires sufficient negative gate drive to achieve specified R_DS(on). At V_GS = -3.3 V, R_DS(on) increases significantly beyond 0.50 Ω, leading to excessive conduction loss. A dedicated gate driver or level shifter generating ≥ -5 V is required for reliable operation of the IRFD9010 in logic-level systems.

What is the thermal resistance from junction to ambient (R_thJA) for the IRFD9010 in standard PCB layout?

The IRFD9010 has a maximum R_thJA of 120 °C/W under standard JEDEC test conditions (single-layer 1 in² copper pad, no airflow). Actual performance depends heavily on PCB copper area, layer count, and thermal vias beneath the drain pad. For production designs, thermal simulation or empirical measurement is recommended to validate junction temperature rise under real IRFD9010 operating conditions.

How does the body diode performance of the IRFD9010 compare to external Schottky diodes in synchronous rectification?

The IRFD9010 body diode has V_SD = -5.5 V at I_S = -0.7 A and t_rr = 75 ns typical-slower and higher forward drop than most Schottky diodes. However, its integration eliminates board space and parasitic inductance, making it viable in low-frequency (<100 kHz), low-current (<1 A) synchronous rectifiers where gate timing margin accommodates recovery delay. For higher performance, external diodes remain preferable, but the IRFD9010 offers simplicity in cost-sensitive, space-constrained IRFD9010 implementations.

IRFD9010 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 1.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 580mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD9010 FAQ

1.How can I place an order for IRFD9010 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD9010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD9010 reliable?

The price and inventory of IRFD9010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9010 is usually 5 days.

3.What payment methods are accepted for IRFD9010?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9010 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD9010?

IRFD9010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD9010 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD9010?

For technical support, including IRFD9010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9010 requirements.

6.How does Aetrix verify that IRFD9010 is sourced from the original manufacturer or authorized distributors?

All IRFD9010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9010 meets industry standards.

7.What is the process for return or replacement of IRFD9010?

All IRFD9010 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9010, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD9010 part is unused and in its original packaging.

Return procedure for IRFD9010:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …