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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD9010PBF

Name: IRFD9010PBF
Brand: Vishay Siliconix
SKU: IRFD9010PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD9010PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD9010PBF.pdf

Description:: MOSFET P-CH 50V 1.1A 4DIP

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Product details

Overview

IRFD9010PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP package, rated for -50 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and 1.1 A continuous drain current at T_C = 25 °C. It serves as a high-ruggedness, reverse-polarity switching device in low-power motor control and audio amplifier output stages.

For engineers reviewing the IRFD9010PBF datasheet, IRFD9010PBF pinout, IRFD9010PBF application, or IRFD9010PBF equivalent, key selection criteria include its -50 V breakdown voltage, 11 nC total gate charge, fast 47 ns rise time, body diode recovery time under 160 ns, and suitability for automatic insertion in compact end-stackable layouts.

Technical Context

This device employs Vishay's HVMDIP (High-Voltage Metal Drain Inverse Planar) technology, delivering low on-resistance with high transconductance and extreme ruggedness via optimized geometry and proprietary processing. Its p-channel architecture enables reverse-polarity operation without level-shifting circuitry.

The IRFD9010PBF supports fast switching with 9.2 ns max turn-on delay and 59 ns max fall time under specified test conditions (V_DD = -25 V, R_g = 24 Ω), while maintaining stable R_DS(on) across temperature (±10% variation from -55 °C to 125 °C per Fig. 4).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-50 V - Withstands up to 50 V reverse drain-source voltage before avalanche conduction.
R_DS(on)	0.50 Ω max at V_GS = -10 V - Enables <1.1 W conduction loss at 1.1 A DC current in TO-251-compatible footprint.
Q_g	11 nC max - Low gate drive energy requirement supports efficient PWM control with standard logic-level drivers.
I_D (cont.)	-1.1 A at T_C = 25 °C - Continuous current capability suitable for low-duty-cycle power stage switching.
t_r/t_f	71 ns / 59 ns max - Fast edge rates reduce switching losses in 100 kHz–500 kHz SMPS and Class-D audio outputs.
V_GS(th)	-2.0 to -4.0 V - Threshold range ensures reliable turn-on with -5 V logic-level gate drive and avoids false triggering near ground.
trr	160 ns max - Body diode recovery time compatible with synchronous rectification in flyback and buck converters.

Pinout & Package

HVMDIP (Hexagonal Vertical Metal Drain Inverse Planar) package: surface-mount, lead-free, thermally enhanced TO-251 variant with exposed drain pad; dimensions 6.73 mm × 6.22 mm × 2.39 mm; 3-pin single-channel configuration.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current sink terminal	Internally connected to exposed metal pad; primary thermal path to PCB copper; must be soldered to large copper pour for 120 °C/W R_thJA compliance.
G (Gate)	Control input	High-impedance MOS gate requiring ≤500 nA leakage current; driven by -10 V for full enhancement; sensitive to ESD (±20 V absolute max).
S (Source)	Reference and current return	Common node for gate drive reference and load return; internal source inductance LS = 6.0 nH affects high-dI/dt switching stability.

Key Features

Feature	Design Value
P-channel reverse polarity operation	Eliminates need for high-side driver ICs in low-side switch configurations with positive supply rails.
Low Q_g and Q_gd	11 nC total / 4.1 nC gate-drain charge enables clean hard-switching with minimal Miller-induced shoot-through risk.
High avalanche ruggedness	Rated for unclamped inductive energy of 1.5 A avalanche current (IL) with guaranteed survivability per Fig. 15.
Temperature-stable R_DS(on)	Normalized on-resistance varies <±10% from -55 °C to 125 °C, simplifying thermal design in wide ambient environments.
End-stackable mechanical form	Flat HVMDIP profile allows vertical stacking in dense PCB layouts without interference-critical for space-constrained motor driver modules.

Applications

Motor Control	Audio Amplifiers
Use Scenario: H-bridge half-bridge leg in 12 V brushed DC motor driver for robotics and actuation. IC Role / Device Role / Timing Role: Low-side P-channel switch enabling simple gate drive with logic-level signals and inherent shoot-through immunity. Use Value: -50 V rating accommodates back-EMF spikes; 0.50 Ω R_DS(on) limits I²R loss to <0.6 W at 1.1 A, reducing heatsink requirements.	Use Scenario: Output stage in Class-D audio amplifier for portable speakers and head units. IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel counterpart in push-pull topology. Use Value: 71 ns rise time supports >200 kHz PWM carrier frequency; body diode trr <160 ns minimizes crossover distortion during dead-time transitions.
Switched-Mode Converters	Control Circuits
Use Scenario: Synchronous rectifier in isolated flyback converter for industrial sensor power supplies. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at light loads. Use Value: Low Q_g (11 nC) reduces gate drive loss; V_GS(th) (-2.0 to -4.0 V) ensures robust turn-on even with gate drive droop under load.	Use Scenario: Polarity-reversal switch in programmable power supply output stage. IC Role / Device Role / Timing Role: Reverse-polarity enable switch controlling connection between regulator and load. Use Value: Compact HVMDIP footprint saves board area; -50 V rating provides margin against transient overvoltage events in lab-grade equipment.

Motor Control

Audio Amplifiers

Use Scenario: H-bridge half-bridge leg in 12 V brushed DC motor driver for robotics and actuation.

IC Role / Device Role / Timing Role: Low-side P-channel switch enabling simple gate drive with logic-level signals and inherent shoot-through immunity.

Use Value: -50 V rating accommodates back-EMF spikes; 0.50 Ω R_DS(on) limits I²R loss to <0.6 W at 1.1 A, reducing heatsink requirements.

Use Scenario: Output stage in Class-D audio amplifier for portable speakers and head units.

IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel counterpart in push-pull topology.

Use Value: 71 ns rise time supports >200 kHz PWM carrier frequency; body diode trr <160 ns minimizes crossover distortion during dead-time transitions.

Switched-Mode Converters

Control Circuits

Use Scenario: Synchronous rectifier in isolated flyback converter for industrial sensor power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at light loads.

Use Value: Low Q_g (11 nC) reduces gate drive loss; V_GS(th) (-2.0 to -4.0 V) ensures robust turn-on even with gate drive droop under load.

Use Scenario: Polarity-reversal switch in programmable power supply output stage.

IC Role / Device Role / Timing Role: Reverse-polarity enable switch controlling connection between regulator and load.

Use Value: Compact HVMDIP footprint saves board area; -50 V rating provides margin against transient overvoltage events in lab-grade equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	TO-220 package; higher R_DS(on) (0.6 Ω); lower Q_g (9.5 nC); same -100 V rating.	Requires through-hole mounting and larger heatsinking; better suited for higher-voltage, lower-frequency linear regulation.	Select when higher voltage margin and legacy through-hole assembly are prioritized over board space and switching speed.
Si2301DS-T1-BE3	SOT-23 package; lower V_DS (-20 V); much lower R_DS(on) (0.115 Ω); 5.5 nC Q_g; 2.6 A I_D.	Limited to low-voltage battery-powered systems; unsuitable for 24 V+ bus applications due to voltage rating.	Select for ultra-compact, high-efficiency 3.3–12 V load switches where voltage stress remains below 15 V.

Compared with IRFD9010PBF, IRF9530NPbF offers greater voltage headroom but sacrifices surface-mount compatibility and thermal density, while Si2301DS-T1-BE3 delivers superior conduction efficiency at low voltage but cannot replace IRFD9010PBF in -40 V–-50 V applications.

Availability

IRFD9010PBF is available at Aetrix Electronics and suitable for motor control, audio amplifiers, switched-mode converters, and control circuits requiring stable component supply, RoHS-compliant packaging, and consistent HVMDIP mechanical form factor.

Supply support for IRFD9010PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFD9010PBF belongs to Vishay's HVMDIP power MOSFET product line, engineered for compact, high-ruggedness switching in space-constrained power stages where reverse-polarity operation and automatic insertion are required.

FAQ

What is the maximum continuous drain current rating for the IRFD9010PBF at 100 °C case temperature?

The IRFD9010PBF has a maximum continuous drain current of -0.68 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the HVMDIP package; designers must ensure adequate PCB copper area and airflow to maintain junction temperature below 150 °C under sustained load. The IRFD9010PBF's R_DS(on) increases only modestly with temperature, supporting predictable performance across its operating range.

Does the IRFD9010PBF have an integrated body diode, and what are its key parameters?

Yes, the IRFD9010PBF includes an integral reverse p–n junction body diode. Key parameters include -1.1 A continuous source-drain current (I_S), -8.8 A pulsed forward current (I_SM), -5.5 V forward voltage (V_SD) at -0.7 A and 25 °C, and 160 ns maximum reverse recovery time (t_rr) at 25 °C. These values are confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet. The IRFD9010PBF body diode enables freewheeling in inductive loads without external components.

Can the IRFD9010PBF be used with logic-level gate drive, and what is its gate threshold voltage range?

Yes, the IRFD9010PBF supports logic-level gate drive: its gate-source threshold voltage (V_GS(th)) ranges from -2.0 V to -4.0 V at I_D = -250 μA, allowing full enhancement with -5 V drive. However, R_DS(on) is specified at V_GS = -10 V (0.50 Ω max); at -5 V, typical R_DS(on) rises to ~1.2 Ω. For optimal conduction loss, the IRFD9010PBF should be driven with ≥-8 V in high-current applications.

What is the thermal resistance from junction to ambient (R_thJA) for the IRFD9010PBF, and how is it achieved?

The IRFD9010PBF has a maximum junction-to-ambient thermal resistance (R_thJA) of 120 °C/W, measured on a standard JEDEC 2S2P test board with 1 in² (6.45 cm²) of 2-oz copper. This value assumes proper soldering of the exposed drain pad to a thermal plane. The IRFD9010PBF's HVMDIP package relies on this copper area for heat dissipation; reducing copper area or omitting thermal vias will significantly degrade actual R_thJA.

Is the IRFD9010PBF suitable for avalanche energy handling, and what is its rated unclamped inductive current?

Yes, the IRFD9010PBF is rated for unclamped inductive switching: its absolute maximum rating for avalanche current (I_L) is -1.5 A, tested per Figure 15 with V_DD ≤ V_DS, dI/dt ≤ 75 A/μs, and T_J ≤ 175 °C. This capability allows safe operation in relay-driving and solenoid-control applications where inductive kickback occurs. The IRFD9010PBF's rugged HVMDIP structure ensures repeatable avalanche performance without parameter shift.

IRFD9010PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 1.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 580mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD9010PBF FAQ

1.How can I place an order for IRFD9010PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD9010PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD9010PBF reliable?

The price and inventory of IRFD9010PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9010PBF is usually 5 days.

3.What payment methods are accepted for IRFD9010PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9010PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD9010PBF?

IRFD9010PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD9010PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD9010PBF?

For technical support, including IRFD9010PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9010PBF requirements.

6.How does Aetrix verify that IRFD9010PBF is sourced from the original manufacturer or authorized distributors?

All IRFD9010PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9010PBF meets industry standards.

7.What is the process for return or replacement of IRFD9010PBF?

All IRFD9010PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9010PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD9010PBF part is unused and in its original packaging.

Return procedure for IRFD9010PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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