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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD9014

Name: IRFD9014
Brand: Vishay Siliconix
SKU: IRFD9014
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD9014

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD9014.pdf

Description:: MOSFET P-CH 60V 1.1A 4DIP

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Product details

Overview

IRFD9014 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and 1.3 W power dissipation at 25 °C ambient. It supports repetitive avalanche operation up to -1.1 A and operates from -55 °C to +175 °C junction temperature - used in DC-DC converter high-side switches and industrial relay drivers.

For engineers reviewing the IRFD9014 datasheet, IRFD9014 pinout, IRFD9014 application, or IRFD9014 equivalent, key selection criteria include its -60 V blocking capability, low gate charge (12 nC), fast switching (11 ns turn-on delay), thermal robustness (175 °C rating), and machine-insertable HVMDIP packaging for automated assembly.

Technical Context

This P-channel MOSFET uses third-generation silicon technology optimized for ruggedized switching in medium-voltage, low-current power control. Its dual-drain configuration serves as a thermal link to the PCB, enabling 1 W dissipation without heatsinking. The device features dynamic dV/dt immunity (-4.5 V/ns) and is characterized for unclamped inductive switching with 140 mJ single-pulse avalanche energy.

Designed for automatic insertion and end-stacking, the IRFD9014 integrates a body diode with 80–160 ns reverse recovery time and 0.096–0.19 μC Q_rr. Gate threshold voltage ranges from -2.0 V to -4.0 V, supporting both standard and logic-level drive when paired with appropriate level-shifting circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - supports 48 V rail switching with 20 % margin against transients
R_DS(on)	0.50 Ω at V_GS = -10 V - delivers ≤0.36 W conduction loss at -0.66 A continuous drain current
Q_g	12 nC - enables fast switching with moderate gate driver strength (e.g., TC4420)
I_D (continuous)	-1.1 A at T_A = 25 °C - suitable for low-power load switching and signal-level power control
T_J range	-55 °C to +175 °C - qualified for under-hood automotive and industrial environments
E_AS	140 mJ - withstands unclamped inductive energy in relay/snubberless solenoid drive
dV/dt rating	-4.5 V/ns - resists false turn-on during high-slew-rate noise coupling

Pinout & Package

The IRFD9014 is housed in a 4-pin HVMDIP (High Voltage Mini-DIP) package with dual drain leads for enhanced thermal conduction to the PCB. Package dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H), 0.100" pin pitch, lead-free (PbF) finish per ordering code IRFD9014PbF.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain 1)	Main power drain terminal	Connected internally to die drain; electrically tied to Drain 2 for parallel current path and thermal spreading
D (Drain 2)	Secondary drain terminal	Provides redundant thermal path to PCB copper; reduces effective R_thJA by distributing heat across two pins
G (Gate)	Control input	Receives negative gate drive relative to source; threshold -2.0 V to -4.0 V; ±20 V absolute max rating
S (Source)	Reference node	Common return for gate drive and load current; body diode anode connects here

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for sustained -1.1 A I_AR and 0.13 mJ E_AR - enables reliable operation in inductive load switching without external snubbers
Dynamic dV/dt immunity	-4.5 V/ns - suppresses parasitic turn-on in high-noise motor or relay drive environments
175 °C operating temperature	Full specification guaranteed up to T_J = 175 °C - eliminates derating concerns in sealed enclosures or high-ambient settings
Machine-insertable HVMDIP	0.1" pin spacing, stackable footprint - supports high-volume through-hole assembly and board stacking for compact multi-rail designs
Low R_DS(on) with low Q_g	0.50 Ω / 12 nC ratio - balances conduction efficiency and switching speed for <100 kHz PWM applications

Applications

Industrial Relay Drivers	DC-DC Converter High-Side Switch
Use Scenario: Driving 24 V/48 V industrial relays with coil inductance >100 mH and flyback voltages exceeding 100 V. IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current; body diode handles flyback energy. Use Value: Repetitive avalanche rating (E_AR = 0.13 mJ) and -4.5 V/ns dV/dt immunity prevent failure during rapid coil de-energization.	Use Scenario: Synchronous buck converter top switch in isolated auxiliary supplies for PLC I/O modules. IC Role / Device Role / Timing Role: High-side power switch in non-synchronous or bootstrap-gated buck topology. Use Value: 0.50 Ω R_DS(on) limits conduction loss at ≤1 A loads; 12 nC Q_g enables efficient 50–100 kHz switching with minimal gate drive power.
Automotive Body Control Modules	Thermal Management Fan Controllers
Use Scenario: Controlling 12 V cabin fans, door locks, or lighting loads in under-dash ECUs exposed to 105 °C ambient. IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO via level-shifting circuitry. Use Value: Full parameter guarantee up to +175 °C T_J ensures reliability without thermal throttling in confined spaces.	Use Scenario: PWM-controlled cooling fan in industrial HVAC controllers where EMI and thermal cycling are critical. IC Role / Device Role / Timing Role: Low-frequency (<5 kHz) power switch modulating fan voltage with minimal switching loss. Use Value: Dual-drain thermal design lowers effective R_thJA, allowing 1.1 A continuous current without heatsink at 70 °C ambient.

Industrial Relay Drivers

DC-DC Converter High-Side Switch

Use Scenario: Driving 24 V/48 V industrial relays with coil inductance >100 mH and flyback voltages exceeding 100 V.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current; body diode handles flyback energy.

Use Value: Repetitive avalanche rating (E_AR = 0.13 mJ) and -4.5 V/ns dV/dt immunity prevent failure during rapid coil de-energization.

Use Scenario: Synchronous buck converter top switch in isolated auxiliary supplies for PLC I/O modules.

IC Role / Device Role / Timing Role: High-side power switch in non-synchronous or bootstrap-gated buck topology.

Use Value: 0.50 Ω R_DS(on) limits conduction loss at ≤1 A loads; 12 nC Q_g enables efficient 50–100 kHz switching with minimal gate drive power.

Automotive Body Control Modules

Thermal Management Fan Controllers

Use Scenario: Controlling 12 V cabin fans, door locks, or lighting loads in under-dash ECUs exposed to 105 °C ambient.

IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO via level-shifting circuitry.

Use Value: Full parameter guarantee up to +175 °C T_J ensures reliability without thermal throttling in confined spaces.

Use Scenario: PWM-controlled cooling fan in industrial HVAC controllers where EMI and thermal cycling are critical.

IC Role / Device Role / Timing Role: Low-frequency (<5 kHz) power switch modulating fan voltage with minimal switching loss.

Use Value: Dual-drain thermal design lowers effective R_thJA, allowing 1.1 A continuous current without heatsink at 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFD120	V_DS = -100 V, R_DS(on) = 0.27 Ω at V_GS = -10 V, Q_g = 24 nC, same HVMDIP package	Higher voltage rating suits 72 V battery systems; higher Q_g increases gate drive demand	Select IRFD120 only if >60 V blocking is required; IRFD9014 remains optimal for 48 V and below with lower drive burden
STP12PF06	V_DS = -60 V, R_DS(on) = 0.22 Ω, Q_g = 22 nC, TO-220 package (not DIP)	Lower R_DS(on) improves conduction loss but requires PCB real estate and heatsinking; incompatible pinout	Choose STP12PF06 only when thermal budget permits TO-220 mounting and layout allows rework; IRFD9014 offers drop-in replacement in existing HVMDIP footprints

Compared with IRFD120 and STP12PF06, the IRFD9014 provides the best balance of voltage margin, gate drive efficiency, and through-hole manufacturability for ≤48 V industrial control - retaining full thermal and avalanche specs in a compact, stackable DIP format without requiring layout changes.

Availability

IRFD9014 is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter high-side switches, and automotive body control modules requiring stable component supply and long-term obsolescence management.

Supply support for IRFD9014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFD9014 belongs to Vishay's third-generation HVMDIP power MOSFET family, engineered for ruggedized, cost-effective through-hole switching in space-constrained industrial controls where thermal performance and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current for the IRFD9014 at 100 °C ambient temperature?

The IRFD9014 supports -0.80 A continuous drain current at T_A = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the HVMDIP package with R_thJA ≤ 120 °C/W. At higher ambient temperatures, conduction loss and junction temperature must be verified using the normalized R_DS(on) vs. temperature curve and SOA graph in the IRFD9014 datasheet.

Does the IRFD9014 have a built-in body diode, and what are its key parameters?

Yes, the IRFD9014 integrates a body diode with V_SD = -5.5 V at I_S = -1.1 A and T_J = 25 °C, reverse recovery time t_rr of 80–160 ns, and Q_rr of 0.096–0.19 μC. These values are measured under standardized conditions (I_F = -6.7 A, dI/dt = 100 A/μs) and enable use in freewheeling and flyback paths without external diodes in many low-frequency applications.

Can the IRFD9014 be driven directly from a 3.3 V microcontroller GPIO?

No - the IRFD9014 has a gate threshold voltage range of -2.0 V to -4.0 V and requires a negative gate-source voltage for full enhancement. A 3.3 V GPIO cannot produce the necessary negative bias. A level-shifting circuit (e.g., charge pump or complementary driver) is required to generate ≥-10 V gate drive relative to the source for optimal R_DS(on) and switching performance.

What is the meaning of "end stackable" in the IRFD9014 product description?

"End stackable" refers to the mechanical design of the HVMDIP package, which allows multiple IRFD9014 units to be mounted in parallel rows on a PCB with aligned pin 1 ends - enabling compact, high-density power stage layouts. This feature supports automated insertion and simplifies thermal management by distributing heat across adjacent devices without interference.

Is the IRFD9014 suitable for use in automotive under-hood applications?

Yes - the IRFD9014 is qualified for operation from -55 °C to +175 °C junction temperature and features repetitive avalanche capability, making it suitable for under-hood automotive applications such as body control modules and fan drivers. However, system-level validation (including ISO 7637-2 pulse testing and thermal cycling) is required per OEM specifications before deployment.

IRFD9014 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 660mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD9014 FAQ

1.How can I place an order for IRFD9014 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD9014 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD9014 reliable?

The price and inventory of IRFD9014 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9014 is usually 5 days.

3.What payment methods are accepted for IRFD9014?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9014 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD9014?

IRFD9014 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD9014 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD9014?

For technical support, including IRFD9014 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9014 requirements.

6.How does Aetrix verify that IRFD9014 is sourced from the original manufacturer or authorized distributors?

All IRFD9014 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9014 meets industry standards.

7.What is the process for return or replacement of IRFD9014?

All IRFD9014 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9014, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD9014 part is unused and in its original packaging.

Return procedure for IRFD9014:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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